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Employment (1)

Tsinghua University: Beijing, Beijing, CN

PhD candidate ( Electronic Engineering)
Employment
Source: Self-asserted source
Wangyang Yu

Works (5)

Spatial distribution study of a nitrogen plasma in an ion-filtered inductively coupled plasma used to grow GaN films

Journal of Physics D: Applied Physics
2019-07-02 | Journal article
Source: Self-asserted source
Wangyang Yu

III-nitride epitaxy by ion filtered inductively coupled plasma MOCVD

IEEE
2019-06-13 | Interactive resource
Source: Self-asserted source
Wangyang Yu

Study on AlN buffer layer for GaN on graphene/copper sheet grown by MBE at low growth temperature

Journal of Alloys and Compounds
2019-01-01 | Journal article
Source: Self-asserted source
Wangyang Yu

Low-temperature and global epitaxy of GaN on amorphous glass substrates by molecular beam epitaxy via a compound buffer layer

Thin Solid Films
2018-08-03 | Journal article
Source: Self-asserted source
Wangyang Yu

Low-temperature epitaxial technology for flexible optoelectronic devices

SCIENTIA SINICA Informationis
2018-06-13 | Journal article
Source: Self-asserted source
Wangyang Yu
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