Iftikhar Ahmad (0000-0001-8591-372X)

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Biography

Dr. Iftikhar Ahmad received his Master of Science (M. Sc.) degree from Govt. College Lahore and ranked first in the state. He completed his master’s and doctoral programs at Texas Tech University in 2003 and 2005, respectively, in the field of wide bandgap semiconductors. He has gone through post-doctoral training at Virginia Commonwealth University in Richmond, Virginia, in the growth processes involving molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) techniques. He joined the University of South Carolina as a post-doctoral fellow in 2007 and later worked as a research assistant professor. His research focus was the growth and characterization of wide bandgap semiconductors-based materials and devices. Dr. Ahmad worked in the industry as a Senior Scientist from 2010 to 2018, where he developed high-quality ultra-wide bandgap materials for ultraviolet light-emitting diodes (UV-LEDs).

Dr. Ahmad joined the University of South Carolina in 2018 as a Tenure Track Assistant Professor to establish his research is ultra-wide bandgap semiconductors. His research involves traditional III-nitride-based semiconductors like AlGaN and recently emerging semiconductor materials like boron nitride and gallium oxides. The research focuses on exploring the novel approaches to MOCVD growth of emerging materials and their application in the devices based on traditional III-nitrides.

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University of South Carolina: Columbia, SC, US

2018-08-06 to present | Assistant Professor (Electrical Engineering)

Employment

Iftikhar Ahmad

https://orcid.org/0000-0001-8591-372X

Personal information

Biography

Activities

Employment (1)

University of South Carolina: Columbia, SC, US

Education and qualifications (1)

Texas Tech University: Lubbock, Texas, US

Professional activities (2)

IEEE: New York, NY, US

American Physical Society: Md., Md., US

Funding (1)

High Efficiency UV-LEDs Based on Hybrid 2D/3D Materials

Works (44)

Reduction in density of interface traps determined by C-V analysis in III-nitride-based MOSHFET structure

Alpha Particle Detection Using Highly Rectifying Ni/Ga2O3/4H-SiC Heteroepitaxial MOS Junction

Progress in Hexagonal Boron Nitride (h-BN) Based Solid State Neutron Detector

Growth evolution of high-quality MOCVD aluminum nitride using nitrogen as carrier gas on the sapphire substrate

Investigation of MOCVD grown crack-free 4 $μ$m thick aluminum nitride using nitrogen as a carrier gas

Envisaging the response of wheat (Triticum Aestivum L.) under different phosphorus doses and methods of application

High-Temperature Operation of AlxGa1- xN (x> 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High-k Atomic Layer Deposited Gate Oxides

High-Temperature Operation of AlxGa1- xN (x> 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High-k Atomic Layer Deposited Gate Oxides

Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high-k ALD ZrO2 dielectric

Semiconductor and template for growing semiconductors

Deep ultraviolet photopumped stimulated emission from partially relaxed AlGaN multiple quantum well heterostructures grown on sapphire substrates

Optically-pumped 285 nm edge stimulated emission from AlGaN-based LED structures grown by MOCVD on sapphire substrates

Pseudomorphic AlxGa1-xN MQW based deep ultraviolet light emitting diodes over sapphire

Pulsed modulation doping of AlxGa1-xN (x> 0.6) AlGaN epilayers for deep UV optoelectronic devices

Enhancement of light extraction efficiency in sub-300 nm nitride thin-film flip-chip light-emitting diodes

Substrate lifted-off AlGaN/AlGaN lateral conduction thin-film light-emitting diodes operating at 285 nm

276 nm substrate-free flip-chip AlGaN light-emitting diodes

Dislocation reduction in high Al-content AlGaN films for deep ultraviolet light emitting diodes

MOCVD growth of semipolar Al ${$sub x$}$ Ga ${$sub 1-x$}$ N on m-plane sapphire for applications in deep-ultraviolet light emitters

MOCVD growth of semipolar AlxGa1- xN on m-plane sapphire for applications in deep-ultraviolet light emitters

Monitoring pollution of coastal lagoon using Liza aurata kidney oxidative stress and genetic endpoints: an integrated biomarker approach

Seasonal Liza aurata tissue-specific DNA integrity in a multi-contaminated coastal lagoon (Ria de Aveiro, Portugal)

Effect of temperature on the growth of InAs/GaAs quantum dots grown on a strained GaAs layer

Self-heating in a GaN based heterostructure field effect transistor

Self-heating in a GaN based heterostructure field effect transistor: Ultraviolet and visible Raman measurements and simulations

Controlled growth of GaN nanowires by pulsed metalorganic chemical

Controlled growth of GaN nanowires by pulsed metalorganic chemical vapor deposition

Depth dependence of defect density and stress in GaN grown on SiC

Depth dependence of defect density and stress in GaN grown on SiC

Optical properties of a nanoporous array in silicon

Self-heating study of an Al Ga N/ Ga N-based heterostructure field-effect transistor using ultraviolet micro-Raman scattering

Self-heating study of an AlGaN/GaN-based heterostructure field effect transistor using ultraviolet micro-Raman scattering.

Self-heating study of an AlGaN/GaN-based heterostructure field-effect

Self-heating study of an AlGaN/GaN-based high electron mobility transistor using visible and ultraviolet micro-Raman scattering

Dependence of the stress--temperature coefficient on dislocation density

Dependence of the stress--temperature coefficient on dislocation density in epitaxial GaN grown on $α$-Al 2 O 3 and 6H--SiC substrates

GaN and Related Alloys

Optical properties of a nanoporous array in silicon

A correlated Raman and X-ray diffraction study of GaN and AlN grown on sapphire and silicon carbide substrates: Micro-Raman imaging and reciprocal space maps

D041 High Resolution X-ray Diffraction Studies of Epitaxially Grown GaN/SiC (0001)-Growth Conditions, Defect Density and Stress

Deep ultraviolet light emitting diodes based on short period superlattices of AlN/AlGa (In) N

Deep Ultraviolet Light Emitting Diodes Based on Short Period Superlattices of AlN/AlGa (In) N

Effect of dislocation density on stress-temperature coefficient of epitaxial GaN grown on^ 26Al2O3 and 6H-SiC substrates

Optical Properties of AlN/AlGa (In) N Short Period Superlattices--Deep UV Light Emitting Diodes

Peer review (5 reviews for 3 publications/grants)