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Scopus Author ID: 56785638700

Keywords

Phase Change Memory, Thermoelectric Effects, Finite Element Modeling

Countries

Bangladesh, United States

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Education and qualifications (3)

University of Connecticut: Storrs, CT, US

2018-08-20 to 2023-08-24 | Doctor of Philosophy in Electrical Engineering
Education
Source: Self-asserted source
Md Tashfiq Bin Kashem

Bangladesh University of Engineering and Technology (BUET): Dhaka, BD

2012-05-30 to 2016-08-08 | Master of Science in Electrical and Electronic Engineering (EEE)
Education
Source: Self-asserted source
Md Tashfiq Bin Kashem

Bangladesh University of Engineering and Technology (BUET): Dhaka, BD

2007-06-09 to 2012-04-01 | Bachelor of Science in Electrical and Electronic Engineering (EEE)
Education
Source: Self-asserted source
Md Tashfiq Bin Kashem

Works (17)

Electronic transport in amorphous Ge2Sb2Te5 phase-change memory line cells and its response to photoexcitation

arXiv
2024 | Other
DOI: 10.48550/arXiv.2401.04913
EID:

2-s2.0-85182575530

Part of ISSN: 23318422
Contributors: Talukder, A.; Kashem, M.; Hafiz, M.; Khan, R.; Dirisaglik, F.; Silva, H.; Gokirmak, A.
Source: Self-asserted source
Md Tashfiq Bin Kashem via Scopus - Elsevier

Electronic transport in amorphous Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> phase-change memory line cells and its response to photoexcitation

Applied Physics Letters
2024 | Journal article
DOI: 10.1063/5.0196842
EID:

2-s2.0-85197904948

Part of ISSN: 00036951
Contributors: Talukder, A.; Kashem, M.; Hafiz, M.; Khan, R.; Dirisaglik, F.; Silva, H.; Gokirmak, A.
Source: Self-asserted source
Md Tashfiq Bin Kashem via Scopus - Elsevier

Resistance Drift in Melt-Quenched Ge2Sb2Te5 Phase Change Memory Line Cells at Cryogenic Temperatures

arXiv
2024 | Other
DOI: 10.48550/arXiv.2401.04909
EID:

2-s2.0-85182687204

Part of ISSN: 23318422
Contributors: Talukder, A.B.M.H.; Bin Kashem, Md.T.; Khan, R.; Dirisaglik, F.; Gokirmak, A.; Silva, H.
Source: Self-asserted source
Md Tashfiq Bin Kashem via Scopus - Elsevier

Resistance Drift in Melt-Quenched Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Phase Change Memory Line Cells at Cryogenic Temperatures

ECS Journal of Solid State Science and Technology
2024-02-01 | Journal article | Author
DOI: 10.1149/2162-8777/ad2332
Part of ISSN: 2162-8769
Part of ISSN: 2162-8777
Contributors: A. Talukder; Md Tashfiq Bin Kashem; Raihan Khan; Faruk Dirisaglik; Ali Gokirmak; Helena Silva
Source: Self-asserted source
Md Tashfiq Bin Kashem
grade
Preferred source (of 2)‎

Modeling Reset, Set and Read Operations in Nanoscale Ge <sub>2</sub> Sb <sub>2</sub> Te <sub>5</sub> Phase Change Memory Devices Using Electric Field and Temperature Dependent Material Properties

physica status solidi (RRL) – Rapid Research Letters
2023-02-01 | Journal article
DOI: 10.1002/pssr.202200419
Part of ISSN: 1862-6254
Part of ISSN: 1862-6270
Contributors: Md Tashfiq Bin Kashem; Jake Scoggin; Zachary Woods; Helena Silva; Ali Gokirmak
Source: Self-asserted source
Md Tashfiq Bin Kashem
grade
Preferred source (of 2)‎

Stopping Resistance Drift in Phase Change Memory Cells and Analysis of Charge Transport in Stable Amorphous Ge2Sb2Te5

2022 | Preprint
DOI: 10.48550/ARXIV.2210.14035
Contributors: Md Tashfiq Bin Kashem; Raihan Sayeed Khan; ABM Hasan Talukder; Faruk Dirisaglik; Ali Gokirmak
Source: Self-asserted source
Md Tashfiq Bin Kashem
grade
Preferred source (of 2)‎

Finite Element Analysis of GeTe / Ge2Sb2Te5 Interfacial Phase Change Memory Devices

2022 20th Non-Volatile Memory Technology Symposium (NVMTS)
2022-12-07 | Conference paper
DOI: 10.1109/nvmts57339.2022.10229781
Contributors: Md Tashfiq Bin Kashem; Jake Scoggin; Helena Silva; Ali Gokirmak
Source: Self-asserted source
Md Tashfiq Bin Kashem
grade
Preferred source (of 2)‎

Calculation of the Energy Band Diagram and Estimation of Electronic Transport Parameters of Metastable Amorphous Ge2Sb2Te5

ECS Transactions
2022-05-20 | Journal article
DOI: 10.1149/10801.0029ecst
Contributors: Md Tashfiq Bin Kashem
Source: Self-asserted source
Md Tashfiq Bin Kashem
grade
Preferred source (of 2)‎

Finite Element Modeling of Thermoelectric Effects in Phase Change Memory Cells

ECS Transactions
2022-05-20 | Journal article
DOI: 10.1149/10801.0003ecst
Part of ISSN: 1938-5862
Part of ISSN: 1938-6737
Source: Self-asserted source
Md Tashfiq Bin Kashem
grade
Preferred source (of 2)‎

Computational Analysis of Joule Heating Effect in Triple Material Gate AlGaN/GaN High Electron Mobility Transistor

ECS Transactions
2021-05-07 | Journal article
DOI: 10.1149/10203.0043ecst
Part of ISSN: 1938-5862
Part of ISSN: 1938-6737
Source: Self-asserted source
Md Tashfiq Bin Kashem
grade
Preferred source (of 2)‎

Reset Variability in Phase Change Memory for Hardware Security Applications

IEEE Transactions on Nanotechnology
2020-11-30 | Journal article
DOI: 10.1109/tnano.2020.3041400
Part of ISSN: 1536-125X
Part of ISSN: 1941-0085
Source: Self-asserted source
Md Tashfiq Bin Kashem
grade
Preferred source (of 2)‎

Analytical modeling of channel potential and threshold voltage of triple material gate AlGaN/GaN HEMT including trapped and polarization‐induced charges

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
2018-07-30 | Journal article
DOI: 10.1002/jnm.2476
Part of ISSN: 0894-3370
Part of ISSN: 1099-1204
Source: Self-asserted source
Md Tashfiq Bin Kashem
grade
Preferred source (of 2)‎

Characteristic analysis of triple material tri-gate junctionless tunnel field effect transistor

2016 9th International Conference on Electrical and Computer Engineering (ICECE)
2017-02-16 | Conference paper
DOI: 10.1109/icece.2016.7853924
Source: Self-asserted source
Md Tashfiq Bin Kashem

Study on doping profile and scaling characteristics of gate and channel engineered symmetric double gate MOSFET

2016 9th International Conference on Electrical and Computer Engineering (ICECE)
2017-02-16 | Conference paper
DOI: 10.1109/icece.2016.7853904
Source: Self-asserted source
Md Tashfiq Bin Kashem

Characteristics of Triple Material Gate AlGaN/GaN High Electron Mobility Transistor

2015 International Conference on Advances in Electrical Engineering (ICAEE)
2016-07-11 | Conference paper
DOI: 10.1109/icaee.2015.7506867
Source: Self-asserted source
Md Tashfiq Bin Kashem
grade
Preferred source (of 2)‎

Thermal conductivity of single layer graphene supported on silicon nitride/silicon substrates

2015 IEEE International WIE Conference on Electrical and Computer Engineering (WIECON-ECE)
2016-03-31 | Conference paper
DOI: 10.1109/wiecon-ece.2015.7443968
Source: Self-asserted source
Md Tashfiq Bin Kashem
grade
Preferred source (of 2)‎

Characteristics of Fully Depleted Four-Gate Field Effect Transistor with Localized Interface Charges: A 3-D Simulation Study

Journal of Nanoelectronics and Optoelectronics
2015-06-01 | Journal article
DOI: 10.1166/jno.2015.1735
Part of ISSN: 1555-130X
Part of ISSN: 1555-1318
Source: Self-asserted source
Md Tashfiq Bin Kashem
grade
Preferred source (of 2)‎
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