Zheng Liu (0000-0001-8672-9879)

Personal information

Biography

Zheng Liu holds a B.S. in Electronics from Peking University, Beijing, China, an M.S. from UCLA, and a Ph.D. in Electrical and Computer Engineering from Princeton University. From 2015 to 2018, he served as a Senior Design Engineer at Skyworks Solutions Inc., California, where he played a pivotal role in RF power amplifier and front-end module design, contributing to the successful shipment of over 40 million units worldwide. He also worked with Apple on mmWave beamformer design and is currently a researcher at Kilby Research Labs, Texas Instruments, focusing on GaN power amplifier modules and mmWave highly stable clock systems.

Dr. Liu’s research expertise includes mm-wave and sub-THz transmiters/power amplifiers, wideband phased array systems, and AI enabled RFIC design methodology. His contributions to the MTT-S field have been recognized with several prestigious awards, including the Bede Liu Best Ph.D. Dissertation Award from Princeton University in 2023, the Advanced Practice Paper Award (First Author) at IEEE IMS 2022, the MTT-S Graduate Fellowship in 2021, and the Analog Devices Outstanding Student Designer Award in 2021. Additionally, he has received three IEEE IMS Best Student Paper Awards, including two as first author in IMS 2021 and one as co-author in IMS 2020.

Dr. Liu is an affiliate member of the MTT-S Technical Committee on Microwave and mmWave Integrated Circuits (TC-14) and actively serves as a reviewer for leading journals such as IEEE JSSC, TMTT, MWTL, and TCAS-I.

Activities

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Texas Instruments (United States): Dallas, US

2023-10-02 to present | Analog (RF/mmWave IC research) Design Engineer (Kilby Labs)

Employment

Zheng Liu

https://orcid.org/0000-0001-8672-9879

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Biography

Activities

Employment (3)

Texas Instruments (United States): Dallas, US

Apple: San Diego, CA, US

Skyworks Solutions (United States): Newbury Park, California, US

Education and qualifications (3)

Princeton University: Princeton, NJ, US

University of California, Los Angeles: Los Angeles, US

Peking University: Beijing, CN

Professional activities (2)

IEEE Microwave Theory & Technology Society (MTT-S): Piscataway, US

2025 IEEE International Microwave Symposim: San Francisco, US

Works (26)

Synthesized Design of Millimeter-Wave Low-Loss Wideband Bandpass Filter and Filtering Impedance Transformer in 90-nm (Bi)-CMOS Technology

Intelligent Integrated Circuits and Systems for 5G/6G Telecommunications

Deep Learning Enabled Design of RF/mmWave IC and Antennas

A Millimeter-Wave Low-Loss On-Chip Filter Design Using a Wideband Synthesis Method in 90-nm SiGe BiCMOS Process

IMS Deep Learning Enabled Generalized Synthesis of Multi-Port Electromagnetic Structures and Circuits for mmWave Power Amplifiers

12.2 A mm-Wave/Sub-THz Synthesizer-Free Coherent Receiver with Phase Reconstruction Through Mixed-Signal Kramer-Kronig Processing

A 36–91 GHz Broadband Beamforming Transmitter Architecture With Phase Error Between 1.2°–2.8° for Joint Communication and Sensing

Deep-Learning-Based Inverse-Designed Millimeter-Wave Passives and Power Amplifiers

Stacked Common-Base vs Common-Emitter mmWave PA Cells and 68–105 GHz Broadband Asymmetrical PA in 250nm InP HBT

Ultra Broadband Phased-Array Transmitter with Low Phase Error of 1.24-2.8° across 36-91 GHz Supporting 10.8 Gbps 64QAM in 90 nm SiGe

Low-Cost W-Band Dual-Mode SIW Bandpass Filters Using Commercially Available Printed-Circuit-Board Technology

A 30-88 GHz Phase Shifter with Broadband 90° Hybrid- Marchand Balun Network and Common-base Buffer Achieving 1.34-3.1° RMS Phase Error in 90 nm SiGe

A 30–97 GHz $\mathbf{P}_{\text{sat},3\text{dB}}$ Broadband PA with 18.5-21.5dBm $\mathbf{P}_{\text{sat}}$ and 18-26% PAE in 90nm SiGe Supporting Concurrent Multi-Band Operation

A 44–64-GHz mmWave Broadband Linear Doherty PA in Silicon With Quadrature Hybrid Combiner and Non-Foster Impedance Tuner

Deep Learning enabled mmWave PA and Antenna Design

A Compact SiGe Stacked Common-Base Dual-Band PA With 20/18.8 dBm P sat at 36/64 GHz Supporting Concurrent Modulation

Deep Learning-Enabled Inverse Design of 30–94 GHz Psat,3dB SiGe PA Supporting Concurrent Multiband Operation at Multi-Gb/s

80–110-GHz Broadband Linear PA With 33% Peak PAE and Comparison of Stacked Common Base and Common Emitter PA in InP

A 44 To 64 GHz Broadband 90° Hybrid Doherty PA With Quasi Non-Foster Tuner in 0.13 μm SiGe

A 42–62 GHz Transformer-Based Broadband mm-Wave InP PA With Second-Harmonic Waveform Engineering and Enhanced Linearity

Silicon Photonic Weights for Microwave Photonic Canceller

High Efficiency, Extended Back-off Range Doherty Power Amplifier Using A Three Port Harmonic Injection Network

Bandwidth Enhanced Doherty Power Amplifier Based on Coupled Phase Compensation Network With Specific Optimal Impedance

Broadband PA Architectures with Asymmetrical Combining and Stacked PA cells across 50-70 GHz and 64-110 GHz in 250 nm InP

Load Modulated Balanced mm-Wave CMOS PA with Integrated Linearity Enhancement for 5G applications

Transformer-based Broadband mm-Wave InP PA across 42-62 GHz with Enhanced Linearity and Second Harmonic Engineering