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Scopus Author ID: 6602078656

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University of Bordeaux: Bordeaux, FR

2012-09-01 to present | Professor (full) (Sciences and Technologies)
Employment
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cristell maneux

Works (50 of 134)

Items per page:
Page 1 of 3

InP/GaAsSb Double Heterojunction Bipolar Transistor Characterization and Compact Modeling up to 500 GHz

IEEE Transactions on Electron Devices
2025-01 | Journal article
DOI: 10.1109/TED.2024.3506505
Contributors: Marina Deng; Chhandak Mukherjee; Lucas Réveil; Akshay M. Arabhavi; Sara Hamzeloui; Colombo R. Bolognesi; Magali De Matos; Cristell Maneux
Source: check_circle
Crossref

Nanoscale Thermal Transport in Vertical Gate-All-Around Junctionless Nanowire Transistors—Part I: Experimental Methods

IEEE Transactions on Electron Devices
2023 | Journal article
DOI: 10.1109/TED.2023.3321277
Contributors: C. Mukherjee; H. Rezgui; Y. Wang; M. Deng; A. Kumar; J. Müller; G. Larrieu; C. Maneux
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Crossref

Nanoscale Thermal Transport in Vertical Gate- All-Around Junctionless Nanowire Transistors— Part II: Multiphysics Simulation

IEEE Transactions on Electron Devices
2023-12 | Journal article
DOI: 10.1109/TED.2023.3321280
Contributors: H. Rezgui; C. Mukherjee; Y. Wang; M. Deng; A. Kumar; J. Müller; G. Larrieu; C. Maneux
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Crossref

InP DHBT Analytical Modeling: Toward THz Transistors

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
2023-11 | Journal article
DOI: 10.1109/TCAD.2023.3257706
Contributors: Nil Davy; Virginie Nodjiadjim; Muriel Riet; Colin Mismer; Marina Deng; Chhandak Mukherjee; Bertrand Ardouin; Cristell Maneux
Source: check_circle
Crossref

(Invited) Strategies for Characterization and Parameter Extraction of Vertical Junction-Less Nanowire FETs Dedicated to Design Technology Co-Optimization

ECS Meeting Abstracts
2023-08-28 | Journal article
DOI: 10.1149/MA2023-01331863mtgabs
Contributors: Cristell Maneux; Chhandak Mukherjee; Marina Deng; Guilhem Larrieu; Yifang WANG; Bruno Wesling; Houssem Rezgui
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Crossref

(Invited) Strategies for Characterization and Parameter Extraction of Vertical Junction-Less Nanowire FETs Dedicated to Design Technology Co-Optimization

ECS Transactions
2023-05-19 | Journal article
DOI: 10.1149/11101.0209ecst
Contributors: Cristell Maneux; Chhandak Mukherjee; Marina Deng; Guilhem Larrieu; Yifang WANG; Bruno Wesling; Houssem Rezgui
Source: check_circle
Crossref

Performance prediction of InP/GaAsSb double heterojunction bipolar transistors for THz applications

Journal of Applied Physics
2021-07-21 | Journal article
DOI: 10.1063/5.0054197
Contributors: Xin Wen; Akshay Arabhavi; Wei Quan; Olivier Ostinelli; Chhandak Mukherjee; Marina Deng; Sébastien Frégonèse; Thomas Zimmer; Cristell Maneux; Colombo R. Bolognesi et al.
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Crossref

Towards Monolithic Indium Phosphide (InP)-Based Electronic Photonic Technologies for beyond 5G Communication Systems

Applied Sciences
2021-03 | Journal article | Author
DOI: 10.3390/app11052393
Contributors: Chhandak Mukherjee; Marina Deng; Virginie Nodjiadjim; Muriel Riet; Colin Mismer; Djeber GUENDOUZ; Christophe Caillaud; Hervé Bertin; Nicolas Vaissiere; Mathieu Luisier et al.
Source: check_circle
Multidisciplinary Digital Publishing Institute

A Multiscale TCAD Approach for the Simulation of InP DHBTs and the Extraction of Their Transit Times

IEEE Transactions on Electron Devices
2019-12 | Journal article
DOI: 10.1109/TED.2019.2946514
Contributors: Xin Wen; Akshay Arabhavi; Olivier Ostinelli; Colombo Bolognesi; Thomas Zimmer; Cristell Maneux; Mathieu Luisier; Chhandak Mukherjee; Christian Raya; Bertrand Ardouin et al.
Source: check_circle
Crossref

Scalable Modeling of Thermal Impedance in InP DHBTs Targeting Terahertz Applications

IEEE Transactions on Electron Devices
2019-05 | Journal article
DOI: 10.1109/TED.2019.2906979
Contributors: Chhandak Mukherjee; Marine Couret; Virginie Nodjiadjim; Muriel Riet; J.-Y. Dupuy; Sebastien Fregonese; Thomas Zimmer; Cristell Maneux
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Crossref

A Compact Formulation for Avalanche Multiplication in SiGe HBTs at High Injection Levels

IEEE Transactions on Electron Devices
2019-01 | Journal article
DOI: 10.1109/TED.2018.2875494
Contributors: Mathieu Jaoul; Cristell Maneux; Didier Celi; Michael Schroter; Thomas Zimmer
Source: check_circle
Crossref

1/f Noise in 3D vertical gate-all-around junction-less silicon nanowire transistors

European Solid-State Device Research Conference
2017 | Conference paper
DOI: 10.1109/ESSDERC.2017.8066585
EID:

2-s2.0-85033433220
Contributors: Mukherjee, C.; Maneux, C.; Pezard, J.; Larrieu, G.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier

A Large-Signal Monolayer Graphene Field-Effect Transistor Compact Model for RF-Circuit Applications

IEEE Transactions on Electron Devices
2017 | Journal article
DOI: 10.1109/TED.2017.2736444
EID:

2-s2.0-85028457962
Contributors: Aguirre-Morales, J.-D.; Fregonese, S.; Mukherjee, C.; Wei, W.; Happy, H.; Maneux, C.; Zimmer, T.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier

Avalanche compact model featuring SiGe HBTs characteristics up to BVcbo

European Solid-State Device Research Conference
2017 | Conference paper
DOI: 10.1109/ESSDERC.2017.8066594
EID:

2-s2.0-85033474941
Contributors: Jaoul, M.; Celi, D.; Maneux, C.; Schroter, M.; Pawlak, A.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier

Hot-Carrier Degradation in SiGe HBTs: A Physical and Versatile Aging Compact Model

IEEE Transactions on Electron Devices
2017 | Journal article
DOI: 10.1109/TED.2017.2766457
EID:

2-s2.0-85040451526
Contributors: Mukherjee, C.; Jacquet, T.; Fischer, G.G.; Zimmer, T.; Maneux, C.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier

Microscopic hot-carrier degradation modeling of SiGe HBTs under stress conditions close to the SOA limit

IEEE Transactions on Electron Devices
2017 | Journal article
DOI: 10.1109/TED.2017.2653197
EID:

2-s2.0-85011701658
Contributors: Kamrani, H.; Jabs, D.; D'Alessandro, V.; Rinaldi, N.; Jacquet, T.; Maneux, C.; Zimmer, T.; Aufinger, K.; Jungemann, C.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier

Multiscaled simulation methodology for neuro-inspired circuits demonstrated with an organic memristor

IEEE Transactions on Multi-Scale Computing Systems
2017 | Journal article
DOI: 10.1109/TMSCS.2017.2773523
EID:

2-s2.0-85035088750
Contributors: BENNETT, C.; LORIVAL, J.; Marc, F.; Cabaret, T.; Jousselme, B.; DERYCKE, V.; Klein, J.; MANEUX, C.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier
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Random telegraph noise in SiGe HBTs: Reliability analysis close to SOA limit

Microelectronics Reliability
2017 | Journal article
DOI: 10.1016/j.microrel.2017.05.001
EID:

2-s2.0-85019748696
Contributors: Mukherjee, C.; Jacquet, T.; Chakravorty, A.; Zimmer, T.; Boeck, J.; Aufinger, K.; Maneux, C.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier

Reliability-aware circuit design methodology for beyond-5g communication systems

IEEE Transactions on Device and Materials Reliability
2017 | Journal article
DOI: 10.1109/TDMR.2017.2710303
EID:

2-s2.0-85030097052
Contributors: Mukherjee, C.; Ardouin, B.; Dupuy, J.-Y.; Nodjiadjim, V.; Riet, M.; Zimmer, T.; Marc, F.; Maneux, C.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier

Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications

Proceedings of the IEEE
2017 | Journal article
DOI: 10.1109/JPROC.2017.2669087
EID:

2-s2.0-85015701250
Contributors: Chevalier, P.; Schroter, M.; Bolognesi, C.R.; D'Alessandro, V.; Alexandrova, M.; Bock, J.; Flickiger, R.; Fregonese, S.; Heinemann, B.; Jungemann, C. et al.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier

Comprehensive study of random telegraph noise in base and collector of advanced SiGe HBT: Bias, geometry and trap locations

European Solid-State Device Research Conference
2016 | Conference paper
DOI: 10.1109/ESSDERC.2016.7599635
EID:

2-s2.0-84994449192
Contributors: Mukherjee, C.; Jacquet, T.; Zimmer, T.; Maneux, C.; Chakravorty, A.; Boeck, J.; Aufinger, K.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier

Low-Frequency Noise in Advanced SiGe:C HBTs-Part I: Analysis

IEEE Transactions on Electron Devices
2016 | Journal article
DOI: 10.1109/TED.2016.2589159
EID:

2-s2.0-84979255934
Contributors: Mukherjee, C.; Jacquet, T.; Chakravorty, A.; Zimmer, T.; Bock, J.; Aufinger, K.; Maneux, C.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier

Low-Frequency Noise in Advanced SiGe:C HBTs-Part II: Correlation and Modeling

IEEE Transactions on Electron Devices
2016 | Journal article
DOI: 10.1109/TED.2016.2588318
EID:

2-s2.0-84978849101
Contributors: Mukherjee, C.; Jacquet, T.; Chakravorty, A.; Zimmer, T.; Bock, J.; Aufinger, K.; Maneux, C.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier

Physics-based electrical compact model for monolayer Graphene FETs

European Solid-State Device Research Conference
2016 | Conference paper
DOI: 10.1109/ESSDERC.2016.7599630
EID:

2-s2.0-84994416053
Contributors: Aguirre-Morales, J.D.; Fregonese, S.; Mukherjee, C.; Maneux, C.; Zimmer, T.; Wei, W.; Happy, H.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier

A geometry scalable model for nonlinear thermal impedance of trench isolated HBTs

IEEE Electron Device Letters
2015 | Journal article
DOI: 10.1109/LED.2014.2375331
EID:

2-s2.0-84920178555
Contributors: Sahoo, A.K.; Fregonese, S.; Desposito, R.; Aufinger, K.; Maneux, C.; Zimmer, T.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier

A new physics-based compact model for Bilayer Graphene Field-Effect Transistors

European Solid-State Device Research Conference
2015 | Conference paper
DOI: 10.1109/ESSDERC.2015.7324743
EID:

2-s2.0-84959324404
Contributors: Aguirre-Morales, J.D.; Fregonese, S.; Mukherjee, C.; Maneux, C.; Zimmer, T.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier

An Accurate Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs

IEEE Transactions on Electron Devices
2015 | Journal article
DOI: 10.1109/TED.2015.2487243
EID:

2-s2.0-84959507757
Contributors: Aguirre-Morales, J.-D.; Fregonese, S.; Mukherjee, C.; Maneux, C.; Zimmer, T.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier

Calibration of 1D doping profiles of SiGe HBTs

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
2015 | Conference paper
DOI: 10.1109/BCTM.2015.7340550
EID:

2-s2.0-84957889339
Contributors: Rosenbaum, T.; Saxod, O.; Vu, V.T.; Celi, D.; Chevalier, P.; Schröter, M.; Maneux, C.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier

Characterization and modeling of low-frequency noise in CVD-grown graphene FETs

European Solid-State Device Research Conference
2015 | Conference paper
DOI: 10.1109/ESSDERC.2015.7324742
EID:

2-s2.0-84959376405
Contributors: Mukherjee, C.; Aguirre-Morales, J.D.; Fregonese, S.; Zimmer, T.; Maneux, C.; Happy, H.; Wei, W.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier

Graphene FET evaluation for RF and mmWave circuit applications

Proceedings - IEEE International Symposium on Circuits and Systems
2015 | Conference paper
DOI: 10.1109/ISCAS.2015.7169298
EID:

2-s2.0-84946195673
Contributors: Fregonese, S.; Daniel Aguirre Morales, J.; De Matos, M.; Maneux, C.; Zimmer, T.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier

Isothermal electrical characteristic extraction for mmWave HBTs

IEEE Transactions on Electron Devices
2015 | Journal article
DOI: 10.1109/TED.2014.2372899
EID:

2-s2.0-84920154450
Contributors: Sahoo, A.K.; Fregonese, S.; D'Esposito, R.; Maneux, C.; Zimmer, T.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier

Reliability of high-speed SiGe:C HBT under electrical stress close to the SOA limit

Microelectronics Reliability
2015 | Journal article
DOI: 10.1016/j.microrel.2015.06.092
EID:

2-s2.0-84943450833
Contributors: Jacquet, T.; Sasso, G.; Chakravorty, A.; Rinaldi, N.; Aufinger, K.; Zimmer, T.; D'Alessandro, V.; Maneux, C.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier

Source-pull and load-pull characterization of graphene FET

IEEE Journal of the Electron Devices Society
2015 | Journal article
DOI: 10.1109/JEDS.2014.2360408
EID:

2-s2.0-84919807820
Contributors: Fregonese, S.; De Matos, M.; Mele, D.; Maneux, C.; Happy, H.; Zimmer, T.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier

Substrate-coupling effect in BiCMOS technology for millimeter wave applications

Conference Proceedings - 13th IEEE International NEW Circuits and Systems Conference, NEWCAS 2015
2015 | Conference paper
DOI: 10.1109/NEWCAS.2015.7181981
EID:

2-s2.0-84945162637
Contributors: Fregonese, S.; D'Esposito, R.; De Matos, M.; Kohler, A.; Maneux, C.; Zimmer, T.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier

Versatile compact model for graphene FET targeting reliability-aware circuit design

IEEE Transactions on Electron Devices
2015 | Journal article
DOI: 10.1109/TED.2015.2395134
EID:

2-s2.0-85027948089
Contributors: Mukherjee, C.; Aguirre-Morales, J.-D.; Frégonèse, S.; Zimmer, T.; Maneux, C.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier

Electro-thermal characterization of SiGe HBT PA-cells

ECS Transactions
2014 | Conference paper
DOI: 10.1149/06406.0295ecst
EID:

2-s2.0-84921271098
Contributors: Zimmer, T.; Weiß, M.; De Matos, M.; Maneux, C.; Fregonese, S.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier

Evaluation and modeling of voltage stress-induced hot carrier effects in high-speed SiGe HBTs

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
2014 | Conference paper
DOI: 10.1109/CSICS.2014.6978552
EID:

2-s2.0-84920064335
Contributors: Sasso, G.; Maneux, C.; Boeck, J.; D'Alessandro, V.; Aufinger, K.; Zimmer, T.; Rinaldi, N.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier

Extraction procedure for emitter series resistance contributions in SiGeC BiCMOS technologies

IEEE International Conference on Microelectronic Test Structures
2014 | Conference paper
DOI: 10.1109/ICMTS.2014.6841462
EID:

2-s2.0-84904166341
Contributors: Stein, F.; Huszka, Z.; Derrier, N.; Maneux, C.; Celi, D.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier

Innovative dual-gate CNTFET logic cell: Investigation of technological dispersion impact through compact modeling

IEEE Transactions on Nanotechnology
2014 | Journal article
DOI: 10.1109/TNANO.2014.2328351
EID:

2-s2.0-84910604003
Contributors: Maneux, C.; Fregonese, S.; Zimmer, T.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier

InP HBT thermal management by transferring to high thermal conductivity silicon substrate

IEEE Electron Device Letters
2014 | Journal article
DOI: 10.1109/LED.2014.2347256
EID:

2-s2.0-84907671135
Contributors: Thiam, A.; Roelens, Y.; Coinon, C.; Avramovic, V.; Grandchamp, B.; Ducatteau, D.; Wallart, X.; Maneux, C.; Zaknoune, M.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier

Qualitative assessment of epitaxial graphene FETs on SiC substrates via pulsed measurements and temperature variation

European Solid-State Device Research Conference
2014 | Conference paper
DOI: 10.1109/ESSDERC.2014.6948821
EID:

2-s2.0-84911963482
Contributors: Mukherjee, C.; Fregonese, S.; Zimmer, T.; Maneux, C.; Happy, H.; Mele, D.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier

80 ns/45 GHz Pulsed measurement system for DC and RF characterization of high speed microwave devices

Solid-State Electronics
2013 | Journal article
DOI: 10.1016/j.sse.2013.02.027
EID:

2-s2.0-84879499154
Contributors: Weiß, M.; Fregonese, S.; Santorelli, M.; Sahoo, A.K.; Maneux, C.; Zimmer, T.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier

A scalable model for temperature dependent thermal resistance of SiGe HBTs

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
2013 | Conference paper
DOI: 10.1109/BCTM.2013.6798137
EID:

2-s2.0-84899845410
Contributors: Sahoo, A.K.; Fregonese, S.; Weiß, M.; Maneux, C.; Zimmer, T.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier

Advanced extraction procedure for parasitic collector series resistance contributions in high-speed BiCMOS technologies

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
2013 | Conference paper
DOI: 10.1109/BCTM.2013.6798138
EID:

2-s2.0-84899883843
Contributors: Stein, F.; Derrier, N.; Maneux, C.; Celi, D.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier

Benchmarking of GFET devices for amplifier application using multiscale simulation approach

Journal of Computational Electronics
2013 | Journal article
DOI: 10.1007/s10825-013-0525-0
EID:

2-s2.0-84890860638
Contributors: Fregonese, S.; Potereau, M.; Deltimple, N.; Maneux, C.; Zimmer, T.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier

Characterization of intra device mutual thermal coupling in multi finger SiGe:C HBTs

2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
2013 | Conference paper
DOI: 10.1109/EDSSC.2013.6628109
EID:

2-s2.0-84890538300
Contributors: Weiß, M.; Sahoo, A.K.; Raya, C.; Santorelli, M.; Fregonese, S.; Maneux, C.; Zimmer, T.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier

Extraction method for SiGe HBT devices

2013 IEEE International Semiconductor Conference Dresden - Grenoble: Technology, Design, Packaging, Simulation and Test, ISCDG 2013
2013 | Conference paper
DOI: 10.1109/ISCDG.2013.6656307
EID:

2-s2.0-84892187388
Contributors: Stein, F.; Celi, D.; Maneux, C.; Derrier, N.; Chevalier, P.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier

Impact of back-end-of-line on thermal impedance in SiGe HBTs

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
2013 | Conference paper
DOI: 10.1109/SISPAD.2013.6650606
EID:

2-s2.0-84891070983
Contributors: Sahoo, A.K.; Fregonese, S.; Weis, M.; Maneux, C.; Malbert, N.; Zimmer, T.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier

Investigation of the base resistance contributions in SiGe HBT devices

Proceedings of the International Semiconductor Conference, CAS
2013 | Conference paper
DOI: 10.1109/SMICND.2013.6688685
EID:

2-s2.0-84893314560
Contributors: Stein, F.; Celi, D.; Maneux, C.; Derrier, N.; Chevalier, P.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier

Multiscale simulation of carbon nanotube transistors

Solid-State Electronics
2013 | Journal article
DOI: 10.1016/j.sse.2013.06.013
EID:

2-s2.0-84880903298
Contributors: Maneux, C.; Fregonese, S.; Zimmer, T.; Retailleau, S.; Nguyen, H.N.; Querlioz, D.; Bournel, A.; Dollfus, P.; Triozon, F.; Niquet, Y.M. et al.
Source: Self-asserted source
cristell maneux via Scopus - Elsevier
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Peer review (2 reviews for 2 publications/grants)

Review activity for Nature electronics. (1)
Review activity for Solid-state electronics. (1)
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