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Keywords

InGaAs, FinFET, GAAFET, Nnaosheet transistor, N2 plasma treatment

Countries

Taiwan

Biography

Hua-Lun Ko received the B.S. degree in physics from National Dong Hwa University, Hualien, Taiwan, in 2014, and the Ph.D. degree in the International College of Semiconductor Technology from National Yang Ming Chiao Tung University, Hsinchu, Taiwan, in 2022. His main research interest is III-V FinFET, Gate-All-Around (GAA) FET, Nanosheet FET fabrication, electrical charasterastics analysis, and reliability. He also researches interest in Negative capacitance FET and ferroelectric material. He received the Best paper award from the International Electron Devices & Materials Symposium in 2020.

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Education and qualifications (3)

National Yang Ming Chiao Tung University Library: Hsinchu, TW

2015-09-01 to 2022-06-30 | Ph.D (International College of Semiconductor Technology)
Education
Source: Self-asserted source
Hua-Lun Ko

National Chiao Tung University: Hsinchu, TW

2014-09-01 to 2015-06-30 | Directly Admitted to Doctoral Program (Institute of Photonic system)
Education
Source: Self-asserted source
Hua-Lun Ko

National Dong Hwa University: Shoufeng, TW

2009-09-01 to 2014-06-30 | bachelor (Physics)
Education
Source: Self-asserted source
Hua-Lun Ko

Works (8)

Sub-10 nm Top Width Nanowire InGaAs Gate-All-Around MOSFETs With Improved Subthreshold Characteristics and Device Reliability

IEEE Journal of the Electron Devices Society
2022 | Journal article
DOI: 10.1109/JEDS.2022.3149954
Contributors: Hua-Lun Ko; Quang Ho Luc; Ping Huang; Jing-Yuan Wu; Si-Meng Chen; Nhan-Ai Tran; Heng-Tung Hsu; Edward Yi Chang
Source: check_circle
Crossref

The Impact of Width Downscaling on the High-Frequency Characteristics of InGaAs Nanowire FETs

IEEE Journal of the Electron Devices Society
2022 | Journal article
DOI: 10.1109/JEDS.2022.3212377
Contributors: P. Huang; Q. H. Luc; A. Sibaja-Hernandez; H. L. Ko; J. Y. Wu; N. A. Tran; N. Collaert; E. Y. Chang
Source: check_circle
Crossref

Electrical Characteristics of In0.53Ga0.47As Gate-All-Around MOSFETs With Different Nanowire Shapes

IEEE Transactions on Electron Devices
2022-08 | Journal article
DOI: 10.1109/TED.2022.3181572
Contributors: Hua-Lun Ko; Quang Ho Luc; Ping Huang; Si-Meng Chen; Jing-Yuan Wu; Nhan-Ai Tran; Edward Yi Chang
Source: check_circle
Crossref

Nitrogen-Passivated (010) In0.53Ga0.47As FinFETs With High Peak g m and Reduced Leakage Current

IEEE Transactions on Electron Devices
2022-02 | Journal article
DOI: 10.1109/TED.2021.3133222
Contributors: Hua-Lun Ko; Quang Ho Luc; Ping Huang; Si-Meng Chen; Jing-Yuan Wu; Che-Wei Hsu; Nhan-Ai Tran; Edward Yi Chang
Source: check_circle
Crossref

Demonstration of Highly Robust 5 nm Hf0.5Zr0.5O₂ Ultra-Thin Ferroelectric Capacitor by Improving Interface Quality

IEEE Electron Device Letters
2021-09 | Journal article
DOI: 10.1109/LED.2021.3102604
Contributors: Yan-Kui Liang; Jui-Sheng Wu; Chih-Yu Teng; Hua-Lun Ko; Quang-Ho Luc; Chun-Jung Su; Edward-Yi Chang; Chun-Hsiung Lin
Source: check_circle
Crossref

Investigation of device transport characteristics enhancement of In0.53Ga0.47As MOSFET through in situ NH3/N2 remote-plasma treatment

AIP Advances
2021-01-01 | Journal article
DOI: 10.1063/5.0037378
Part of ISSN: 2158-3226
Source: Self-asserted source
Hua-Lun Ko

Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratio

Journal of Crystal Growth
2019-09 | Journal article
DOI: 10.1016/j.jcrysgro.2019.06.016
Part of ISSN: 0022-0248
Source: Self-asserted source
Hua-Lun Ko

Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (1 1 1) substrate by MOCVD

Journal of Crystal Growth
2019-01 | Journal article
DOI: 10.1016/j.jcrysgro.2018.09.046
Part of ISSN: 0022-0248
Source: Self-asserted source
Hua-Lun Ko
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