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Works (10)

Asymmetric Gate and SiC Substrate Grooved InGaN Back-Barrier AlGaN/GaN HEMTs for High-Power RF Applications

Physica Status Solidi (A) Applications and Materials Science
2024 | Journal article
EID:

2-s2.0-85182645022

Part of ISSN: 18626319 18626300
Contributors: Parvez, B.; Sahu, J.; Basak, S.; Patil, M.; Sahu, A.; Garg, G.; Ganguly, S.; Saha, D.
Source: Self-asserted source
Bazila Parvez via Scopus - Elsevier

Rapid On-Wafer Quality Screening of AlGaN/GaN Superlattice Castellated Field Effect Transistors Using Short-Term Stress and Electroluminescence

IEEE Electron Device Letters
2024-12 | Journal article
Contributors: Bazila Parvez; Akhil S. Kumar; James W. Pomeroy; Matthew D. Smith; Robert S. Howell; Martin Kuball
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P-type NiOX dielectric-based CMOS inverter logic gate using enhancement-mode GaN nMOS and diamond pMOS transistors

Applied Physics Letters
2024-12-16 | Journal article
Contributors: Mahalaxmi Patil; Subrat K. Pradhan; Vivek K. Shukla; Padmnabh Rai; Jayanti Paul; Aaqib H. Sheikh; Bazila Parvez; Swaroop Ganguly; Kasturi Saha; Dipankar Saha
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Effective gate length determination of AlGaN/GaN HEMTs from direct measurements of thermal signatures

Applied Physics Letters
2024-03-18 | Journal article
Contributors: Arpit Sahu; Bazila Parvez; Mahalaxmi Patil; Subhajit Basak; Jyoti Sahu; Bhanu B. Upadhyay; Swaroop Ganguly; Dipankar Saha
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Improved RF-DC characteristics and reduced gate leakage in GaN MOS-HEMTs using thermally grown Nb<sub>2</sub>O<sub>5</sub> gate dielectric

Physica Scripta
2023 | Journal article
EID:

2-s2.0-85144256480

Part of ISSN: 14024896 00318949
Contributors: Bhardwaj, N.; Upadhyay, B.B.; Parvez, B.; Pohekar, P.; Yadav, Y.; Sahu, A.; Patil, M.; Basak, S.; Sahu, J.; Sabiha, F.S.A. et al.
Source: Self-asserted source
Bazila Parvez via Scopus - Elsevier

Evidence of distributed energy border traps at Al<sub>2</sub>O<sub>3</sub>/p-diamond interface

Diamond and Related Materials
2022 | Journal article
EID:

2-s2.0-85134435081

Part of ISSN: 09259635
Contributors: Pohekar, P.; Parvez, B.; Ganguly, S.; Saha, D.
Source: Self-asserted source
Bazila Parvez via Scopus - Elsevier

Heat diffusion governing universal trend in saturation current and power in AlGaN/GaN high electron mobility transistors in pulsed operation

Solid-State Electronics
2022 | Journal article
EID:

2-s2.0-85135724178

Part of ISSN: 00381101
Contributors: Parvez, B.; Pohekar, P.; Ganguly, S.; Saha, D.
Source: Self-asserted source
Bazila Parvez via Scopus - Elsevier

Performance improvement in NiO <sub>x</sub>-based GaN MOS-HEMTs

Semiconductor Science and Technology
2022 | Journal article
EID:

2-s2.0-85133155482

Part of ISSN: 13616641 02681242
Contributors: Meer, M.; Pohekar, P.; Parvez, B.; Ganguly, S.; Saha, D.
Source: Self-asserted source
Bazila Parvez via Scopus - Elsevier

Room temperature single-photon emission from InGaN quantum dot ordered arrays in GaN nanoneedles

Applied Physics Letters
2022-11-21 | Journal article
Contributors: Pratim K. Saha; Kanchan Singh Rana; Navneet Thakur; Bazila Parvez; Shazan Ahmad Bhat; Swaroop Ganguly; Dipankar Saha
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Improvements From SiC Substrate Thinning in AlGaN/GaN HEMTs: Disparate Effects on Contacts, Access and Channel Regions

IEEE Electron Device Letters
2021-05 | Journal article
Contributors: Bazila Parvez; Jaya Jha; Pankaj Upadhyay; Navneet Bhardwaj; Yogendra Yadav; Bhanu Upadhyay; Swaroop Ganguly; Dipankar Saha
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