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Education and qualifications (1)

Institute of Microelectronics of the Chinese Academy of Sciences: Beijing, CN

(Key Laboratory of Microelectronics Devices and Integrated Technology)
Education
Source: Self-asserted source
Min Liao

Works (4)

Evidence of Oxygen Vacancy Generation as Physical Origin of Endurance Fatigue of Si FeFET With TiN/Hf0.5Zr0.5O2/SiOx/Si Gate-Stacks

IEEE Transactions on Electron Devices
2024-12 | Journal article
DOI: 10.1109/TED.2024.3479159
Contributors: Xianzhou Shao; Junshuai Chai; Fengbin Tian; Xiaoyu Ke; Min Liao; Saifei Dai; Hongyang Fan; Xiaoqing Sun; Hao Xu; Kai Han et al.
Source: check_circle
Crossref

Wake-Up Free Hf₀.₅Zr₀.₅O₂ Ferroelectric Capacitor by Annealing and Inserting a Top Dielectric Layer

IEEE Transactions on Electron Devices
2024-10 | Journal article
DOI: 10.1109/TED.2024.3446753
Contributors: Min Liao; Junshuai Chai; Jinjuan Xiang; Kai Han; Yanrong Wang; Hao Xu; Xiaolei Wang; Jing Zhang; Wenwu Wang
Source: check_circle
Crossref

A Compact Model of Double Hysteresis Loop for Antiferroelectric Capacitor

IEEE Transactions on Electron Devices
2023 | Journal article
DOI: 10.1109/TED.2023.3297563
Contributors: Min Liao; Junshuai Chai; Jinjuan Xiang; Kai Han; Yanrong Wang; Hao Xu; Xiaolei Wang; Jing Zhang; Wenwu Wang
Source: check_circle
Crossref

Impact of Saturated Spontaneous Polarization on the Endurance Fatigue of Si FeFET With Metal/Ferroelectric/Interlayer/Si Gate Structure

IEEE Transactions on Electron Devices
2023 | Journal article
DOI: 10.1109/TED.2023.3285715
Contributors: Min Liao; Hao Xu; Jiahui Duan; Shujing Zhao; Fengbin Tian; Junshuai Chai; Kai Han; Yibo Jiang; Jinjuan Xiang; Wenwu Wang et al.
Source: check_circle
Crossref
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