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Works (8)

Fabrication and formation mechanisms of ohmic conducts with low annealing temperature for GaN/AlN superlattice barrier HEMTs

Journal of Physics D: Applied Physics
2025-01-13 | Journal article
DOI: 10.1088/1361-6463/ad7ffa
Contributors: Shanjie Li; Changtong Wu; Fanyi Zeng; Nengtao Wu; Ling Luo; Ben Cao; Wenliang Wang; Guoqiang Li
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Crossref

Breakdown voltage enhancement and specific on-resistance reduction in depletion-mode GaN HEMTs by co-modulating electric field

Journal of Physics D: Applied Physics
2024-10-18 | Journal article
DOI: 10.1088/1361-6463/ad61f6
Contributors: Ling Luo; Nengtao Wu; Zhiheng Xing; Shanjie Li; Fanyi Zeng; Ben Cao; Changtong Wu; Guoqiang Li
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Crossref

High On/Off Current Ratio and High V th/R on Stability GaN MIS-HEMTs With GaN/AlN Superlattices Barrier

IEEE Transactions on Electron Devices
2024-05 | Journal article
DOI: 10.1109/TED.2024.3372931
Contributors: Shanjie Li; Fanyi Zeng; Zhiheng Xing; Nengtao Wu; Ben Cao; Ling Luo; Changtong Wu; Wenliang Wang; Guoqiang Li
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Crossref

Enhanced Performance of Low-Leakage-Current Normally off p-GaN Gate HEMTs Using NH3 Plasma Pretreatment

IEEE Transactions on Electron Devices
2023-09 | Journal article
DOI: 10.1109/TED.2023.3294894
Contributors: Nengtao Wu; Ling Luo; Zhiheng Xing; Shanjie Li; Fanyi Zeng; Ben Cao; Changtong Wu; Guoqiang Li
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Crossref

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Semiconductor Science and Technology
2023-06-01 | Journal article
DOI: 10.1088/1361-6641/acca9d
Contributors: Nengtao Wu; Zhiheng Xing; Shanjie Li; Ling Luo; Fanyi Zeng; Guoqiang Li
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Crossref

Degradation mechanisms of Mg-doped GaN/AlN superlattices HEMTs under electrical stress

Applied Physics Letters
2022-08-08 | Journal article
DOI: 10.1063/5.0094957
Contributors: Shanjie Li; Peiye Sun; Zhiheng Xing; Nengtao Wu; Wenliang Wang; Guoqiang Li
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Crossref

Time-Dependent Threshold Voltage Instability Mechanisms of p-GaN Gate AlGaN/GaN HEMTs Under High Reverse Bias Conditions

IEEE Transactions on Electron Devices
2021-01 | Journal article
DOI: 10.1109/TED.2020.3039766
Contributors: Shanjie Li; Zhiyuan He; Rui Gao; Yiqiang Chen; Yuan Chen; Chang Liu; Yun Huang; Guoqiang Li
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Crossref

Time-dependent characteristics and physical mechanisms of AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors under different bias conditions

Journal of Physics D: Applied Physics
2019-11-27 | Journal article
DOI: 10.1088/1361-6463/ab3d52
Contributors: Shanjie Li; Zhiyuan He; Rui Gao; Yiqiang Chen; Yang Liu; Zhe Zhu
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