Personal information

Activities

Employment (1)

Institut Teknologi Bandung: Bandung, Jawa Barat, ID

1989-04-01 to present | Senior Lecturer (Physics)
Employment
Source: Self-asserted source
Pepen Arifin

Education and qualifications (2)

Macquarie University: Sydney, NSW, AU

1990-03 to 1996-09 | Ph.D (Mathematics, Physics, Computing and Electronics)
Education
Source: Self-asserted source
Pepen Arifin

Institut Teknologi Bandung: Bandung, Jawa Barat, ID

1981-08 to 1987-10 | Drs (Physics)
Education
Source: Self-asserted source
Pepen Arifin

Professional activities (4)

Institut Teknologi Bandung: Bandung, Jawa Barat, ID

2016-06 to present | Head (Quality Assurance Unit)
Service
Source: Self-asserted source
Pepen Arifin

Institut Teknologi Bandung: Bandung, Jawa Barat, ID

2004-03 to 2007-12 | Chairman (Physics)
Service
Source: Self-asserted source
Pepen Arifin

Universitas Jember: Jember, Jawa Timur, ID

1998-11 to 1998-12 | Visiting Fellow (Physics)
Invited position
Source: Self-asserted source
Pepen Arifin

Macquarie University: Sydney, NSW, AU

1998-06 to 1998-08 | Visiting Researcher, Semiconductor Science and Technol.,Lab., Macquarie University (Physics)
Distinction
Source: Self-asserted source
Pepen Arifin

Funding (1)

P3MI LPPM ITB

Grant
Institut Teknologi Bandung (LPPM ITB, ID)
Source: Self-asserted source
Pepen Arifin

Works (44)

Enhanced Hall Mobility and d0 Ferromagnetism in Li-Doped ZnO Thin Films Prepared by Aerosol-Assisted CVD

Electronic Materials Letters
2024-03 | Journal article
Contributors: Muhammad Arief Mustajab; Pepen Arifin; Suprijadi Suprijadi; Toto Winata
Source: check_circle
Crossref

Plasma-Assisted MOCVD Growth of Non-Polar GaN and AlGaN on Si(111) Substrates Utilizing GaN-AlN Buffer Layer

Coatings
2022-01 | Journal article | Author
Contributors: Pepen Arifin; Heri Sutanto; Sugianto; Agus Subagio
Source: check_circle
Multidisciplinary Digital Publishing Institute
grade
Preferred source (of 2)‎

MOCVD growth and characterization of TiO2 thin films for hydrogen gas sensor application

Materials Research Express
2019-04-24 | Journal article
Contributors: Pepen Arifin; M Arief Mustajab; Suprijadi Haryono; D R Adhika; A A Nugraha
Source: check_circle
Crossref

Simulation and optimization performance of GaAs/GaAs<inf>0.5</inf>Sb<inf>0.5</inf>/GaSb mechanically stacked tandem solar cells

Journal of Physics: Conference Series
2018 | Conference paper
EID:

2-s2.0-85048037483

Contributors: Tayubi, Y.R.; Suhandi, A.; Samsudin, A.; Arifin, P.; Supriyatman
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

Reducing the Light Reflected by Silicon Surface Using ZnO/TS Antireflection Coating

Journal of Physics: Conference Series
2017 | Conference paper
EID:

2-s2.0-85030152215

Contributors: Suhandi, A.; Tayubi, Y.R.; Wibowo, F.C.; Arifin, P.; Supriyatman
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

Growth mechanism of Co:TiO<inf>2</inf>thin film deposited by metal organic chemical vapor deposition technique

IOP Conference Series: Materials Science and Engineering
2016 | Conference paper
EID:

2-s2.0-84977090786

Contributors: Saripudin, A.; Arifin, P.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

Growth mechanism of GaAs1-xSbx ternary alloy thin film on MOCVD reactor using TMGa, TDMAAs and TDMASb

IOP Conference Series: Materials Science and Engineering
2016 | Conference paper
EID:

2-s2.0-84977085474

Contributors: Suhandi, A.; Tayubi, Y.R.; Arifin, P.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

Growth of GaAsSb thin film by vertical-MOCVD and their characterization

Journal of Engineering and Applied Sciences
2016 | Journal article
EID:

2-s2.0-85030988656

Contributors: Suhandi, A.; Tayubi, Y.R.; Arifin, P.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

A new approach for fabricating low cost DSSC by using carbon-ink from inkjet printer and its improvement efficiency by depositing metal bridge between titanium dioxide particles

Journal of Solar Energy Engineering, Transactions of the ASME
2014 | Journal article
EID:

2-s2.0-84901985060

Contributors: Saehana, S.; Darsikin; Yuliza, E.; Arifin, P.; Khairurrijal; Abdullah, M.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

Effect of growth temperature on cobalt-doped TiO<inf>2</inf> thin films deposited on Si(100) substrate by MOCVD technique

Advanced Materials Research
2014 | Book
EID:

2-s2.0-84896276226

Contributors: Saripudin, A.; Saragih, H.; Khairurrijal; Winata, T.; Arifin, P.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

Dye-sensitized solar cells (DSSC) from black rice and its performance improvement by depositing interconnected copper (copper bridge) into the space between TiO<inf>2</inf> nanoparticles

Materials Science Forum
2013 | Book
EID:

2-s2.0-84874027862

Contributors: Saehana, S.; Yuliza, E.; Arifin, P.; Khairurrijal; Abdullah, M.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

A new architecture for solar cells involving a metal bridge deposited between active TiO <inf>2</inf> particles

Journal of Applied Physics
2012 | Journal article
EID:

2-s2.0-84863520719

Contributors: Saehana, S.; Arifin, P.; Khairurrijal; Abdullah, M.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

Performance improvement of TiO<inf>2</inf> based solar cells by coating Cu nanoparticles into the space between TiO<inf>2</inf>

AIP Conference Proceedings
2011 | Conference paper
EID:

2-s2.0-84255167529

Contributors: Saehana, S.; Prasetyowati, R.; Hidayat, M.I.; Arifin, P.; Khairurrijal; Abdullah, M.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

Surface morphology, electrical and optical properties n-type doped MOCVD grown GaSb using dimethyltellurium

International Journal of Materials Research
2011 | Journal article
EID:

2-s2.0-81755166033

Contributors: Ramelan, A.H.; Arifin, P.; Goldys, E.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

Electrical properties of p-n junction GaSb fabricated from spin coating using Zn-diffusion method

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
2010 | Conference paper
EID:

2-s2.0-79951738108

Contributors: Ramelan, A.H.; Goldys, E.M.; Arifin, P.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

GaSb quantum dots and its microanalysis using X-ray photoelectron spectroscopy (XPS)

ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology
2010 | Conference paper
EID:

2-s2.0-80555157630

Contributors: Ramelan, A.H.; Arifin, P.; Goldys, E.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

Growth of Al<inf>x</inf>Ga<inf>1-x</inf>N epitaxial thin film on sapphire substrate by plasma assisted metal organic chemical vapor deposition (PA-MOCVD)

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
2010 | Conference paper
EID:

2-s2.0-77957585638

Contributors: Arsyad, F.S.; Arifin, P.; Barmawi, M.; Budiman, M.; Sukirno; Supu, A.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

Growth of AlGaSb compound semiconductors on GaAs substrate by metalorganic chemical vapour deposition

Advances in Materials Science and Engineering
2010 | Journal article
EID:

2-s2.0-78650742099

Contributors: Ramelan, A.H.; Harjana, H.; Arifin, P.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

Plasma-assisted MOCVD growth of GaMnN

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
2010 | Conference paper
EID:

2-s2.0-77957572866

Contributors: Mulyanti, B.; Arifin, P.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

Effect of Co-doping on microstructural, crystal structure and optical properties of Ti<inf>1-x</inf>CO<inf>x</inf>O<inf>2</inf> thin films deposited on Si substrate by MOCVD method

AIP Conference Proceedings
2008 | Conference paper
EID:

2-s2.0-42449094172

Contributors: Supriyanto, E.; Sutanto, H.; Subagio, A.; Saragih, H.; Budiman, M.; Arifin, P.; Sukirno; Barmawi, M.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

High mobility and high N concentration of GaN<inf>x</inf>As<inf>1-x</inf> thin films grown by metal organic chemical vapor deposition

2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008
2008 | Conference paper
EID:

2-s2.0-67649669826

Contributors: Hamidah, I.; Suhandi, A.; Setiawan, A.; Arifin, P.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

Microstructure and optical properties of Al<inf>x</inf>Ga <inf>1-x</inf>N/GaN heterostructure thin films grown on Si(111) substrate by plasma assisted metalorganic chemical vapor deposition method

AIP Conference Proceedings
2008 | Conference paper
EID:

2-s2.0-42449139797

Contributors: Sutanto, H.; Subagio, A.; Supriyanto, E.; Arifin, P.; Budiman, M.; Sukirno; Barmawi, M.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

Study of Mg-doped GaN thin films grown on c-plane sapphire substrate by plasma assisted metalorganic chemical vapor deposition method

AIP Conference Proceedings
2008 | Conference paper
EID:

2-s2.0-42449152417

Contributors: Subagio, A.; Sutanto, H.; Supriyanto, E.; Budiman, M.; Arifin, P.; Sukirno; Barmawi, M.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

Co-doped TiO<inf>2</inf>rutile thin films deposited by MOCVD method

Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN
2006 | Conference paper
EID:

2-s2.0-48749118409

Contributors: Saragih, H.; Arifin, P.; Barmawi, M.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

Epitaxial GaN film grown at low temperature by hydrogen-plasma assisted MOCVD

Materials Science Forum
2006 | Book
EID:

2-s2.0-35748970474

Contributors: Yam, F.K.; Hassan, Z.; Ibrahim, K.; Barmawi, M.; Sugianto; Budiman, M.; Arifin, P.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

Growth of GaN quantum dots using [(C<inf>2</inf>H<inf>5</inf>)4]Si by plasma assisted MOCVD

Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN
2006 | Conference paper
EID:

2-s2.0-48749107352

Contributors: Arsyad, F.S.; Subagio, A.; Sutanto, H.; Arifin, P.; Budiman, M.; Barmawi, M.; Husein, I.; Jamal, Z.A.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

Study of Mn incorporation into GaN:Mn magnetic semiconductor thin films prepared by plasma assisted MOCVD

Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN
2006 | Conference paper
EID:

2-s2.0-48749116458

Contributors: Mulyanti, B.; Subagio, A.; Sutanto, H.; Arsyad, F.S.; Arifin, P.; Budiman, M.; Barmawi, M.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on GaN grown on silicon

Applied Surface Science
2005 | Journal article
EID:

2-s2.0-21244488210

Contributors: Lee, Y.C.; Hassan, Z.; Yam, F.K.; Abdullah, M.J.; Ibrahim, K.; Barmawi, M.; Sugianto; Budiman, M.; Arifin, P.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

Optical properties of GaN on Si substrate using plasma-assisted MOCVD technique in the Infrared and visible regions

Materials Science Forum
2005 | Book
EID:

2-s2.0-35148819668

Contributors: Hashim, M.R.; Oh, S.A.; Ng, S.S.; Hassan, Z.; Ibrahim, K.; Barmawi, M.; Sugianto; Budiman, M.; Arifin, P.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

Optical properties of GaN on sapphire substrates grown by plasma-assisted MOCVD

Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics
2004 | Conference paper
EID:

2-s2.0-51349155173

Contributors: Oh, S.A.; Hashim, M.R.; Ng, S.S.; Hassan, Z.; Ibrahim, K.; Barmawi, M.; Sugianto; Budiman, M.; Arifin, P.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

Physical and pyroelectric properties of tantalum-oxide-doped lead zirconium titanate [Pb<inf>0.9950</inf>(Zr<inf>0.525</inf>Ti<inf>0.465</inf>Ta<inf>0.010</inf>) O<inf>3</inf>] thin films and their application for IR sensors

Physica Status Solidi (A) Applied Research
2003 | Journal article
EID:

2-s2.0-0344494682

Contributors: Irzaman; Darvina, Y.; Fuad, A.; Arifin, P.; Budiman, M.; Barmawi, M.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

Au/n-GaN schottky diode grown on Si(111) by plasma assisted MOCVD

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
2002 | Conference paper
EID:

2-s2.0-84924589941

Contributors: Budiman, M.; Sutanto, H.; Wendri, N.; Supriyanto, E.; Sugianto; Arifin, P.; Barmawi, M.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

Growth of Al<inf>x</inf>Ga<inf>1-x</inf>N by Plasma assisted MOCVD

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
2002 | Conference paper
EID:

2-s2.0-84952669155

Contributors: Arifin, P.; Sugianto; Suprianto, E.; Wendri, N.; Sutanto, H.; Budiman, M.; Barmawi, M.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

YBa2Cu3O7-δ thin films deposited by a vertical MOCVD reactor

Materials Chemistry and Physics
2002 | Journal article
EID:

2-s2.0-0037005636

Contributors: Sujiono, E.H.; Arifin, P.; Barmawi, M.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

YBa<inf>2</inf>Cu<inf>3</inf>O<inf>7-δ</inf> Thin Films Deposited by MOCVD Vertical Reactor with a Flow Guide

Physica Status Solidi (A) Applied Research
2001 | Journal article
EID:

2-s2.0-1842855977

Contributors: Sujiono, E.H.; Sani, R.A.; Saragi, T.; Arifin, P.; Barmawi, M.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

Growth of GaN film on a-plane sapphire substrates by plasma-assisted MOCVD

Journal of Crystal Growth
2000 | Journal article
EID:

2-s2.0-0034503775

Contributors: Sugianto; Sani, R.A.; Arifin, P.; Budiman, M.; Barmawi, M.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

Low pressure MOCVD growth of GaSb using trisdimethylaminoantimony (TDMASb)

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
2000 | Conference paper
EID:

2-s2.0-84949788431

Contributors: Sustini, E.; Sugianto; Sani, R.A.; Latunuwe, A.; Arifin, P.; Barrnawi, M.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

The influence of hydrogen plasma and annealing on GaN film grown by plasma-assisted MOCVD

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
2000 | Conference paper
EID:

2-s2.0-84949741587

Contributors: Sugianto, A.S.; Erzam, R.A.S.; Budiman, M.; Arifin, P.; Barmawi, M.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

Growth of GaN by Microwave Plasma enhanced MOCVD

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
1999 | Conference paper
EID:

2-s2.0-0032683338

Contributors: Sani, R.A.; Barmawi, M.; Arifin, P.; Sugianto
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

Conduction mechanism in a metal-insulator-semiconductor structure with a low temperature GaAs insulating layer

Solid-State Electronics
1997 | Journal article
EID:

2-s2.0-0031207879

Contributors: Arifin, P.; Tansley, T.L.; Goldys, E.M.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

Electron transport in low temperature grown in GaAs

Conference on Optoelectronic &amp; Microelectronic Materials and Devices, Proceedings, COMMAD
1996 | Conference paper
EID:

2-s2.0-0030353161

Contributors: Arifin, P.; Tansley, T.L.; Goldys, E.M.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

Gap state transport in annealed low temperature grown GaAs inferred from the properties of Al/LT GaAs/n +GaAs Schottky diodes

Conference on Optoelectronic &amp; Microelectronic Materials and Devices, Proceedings, COMMAD
1996 | Conference paper
EID:

2-s2.0-0030367509

Contributors: Arifin, P.; Tansley, T.L.; Goldys, E.M.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

Electron mobility in low temperature grown gallium arsenide

Materials Science and Engineering B
1995 | Journal article
EID:

2-s2.0-0029488691

Contributors: Arifin, P.; Goldys, E.M.; Tansley, T.L.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

Monte Carlo simulation of electron drift velocity in low-temperature-grown gallium arsenide in a Schottky-barrier model

Physical Review B
1995 | Journal article
EID:

2-s2.0-0038987487

Contributors: Arifin, P.; Goldys, E.; Tansley, T.L.
Source: Self-asserted source
Pepen Arifin via Scopus - Elsevier

Peer review (3 reviews for 2 publications/grants)

Review activity for Journal of materials science. Materials in electronics (1)
Review activity for Journal of vacuum science & technology. (2)