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Works (5)

Flexible Complementary Metal‐Oxide‐Semiconductor Inverter Based on 2D p‐type WSe2 and n‐type MoS2

physica status solidi (a)
2024-05 | Journal article
DOI: 10.1002/pssa.202300913
Contributors: Agata Piacentini; Dmitry K. Polyushkin; Burkay Uzlu; Annika Grundmann; Michael Heuken; Holger Kalisch; Andrei Vescan; Zhenxing Wang; Max C. Lemme; Thomas Mueller et al.
Source: check_circle
Crossref

Silver nanowire electrodes for transparent light emitting devices based on WS2 monolayers

Nanotechnology
2023-07-09 | Journal article
DOI: 10.1088/1361-6528/accbc6
Contributors: Henrik Myja; Zhiqiao Yang; Irene A Goldthorpe; Alexander J B Jones; Kevin P Musselman; Annika Grundmann; Holger Kalisch; Andrei Vescan; Michael Heuken; Tilmar Kümmell et al.
Source: check_circle
Crossref

Impact of synthesis temperature and precursor ratio on the crystal quality of MOCVD WSe<sub>2</sub> monolayers

Nanotechnology
2023-02-06 | Journal article | Author
DOI: 10.1088/1361-6528/acb947
Part of ISSN: 0957-4484
Part of ISSN: 1361-6528
Contributors: Annika Grundmann; Yannick Beckmann; Amir Ghiami; Minh N. Bui; Beata Kardynal; Lena Patterer; Jochen M Schneider; Tilmar Kümmell; Gerd Bacher; Michael Heuken et al.
Source: Self-asserted source
Annika Grundmann
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MOVPE of Large-Scale MoS2/WS2, WS2/MoS2, WS2/Graphene and MoS2/Graphene 2D-2D Heterostructures for Optoelectronic Applications

MRS Advances
2020-06 | Journal article
DOI: 10.1557/adv.2020.104
Part of ISSN: 2059-8521
Contributors: Annika Grundmann
Source: Self-asserted source
Annika Grundmann

H2S-free Metal-Organic Vapor Phase Epitaxy of Coalesced 2D WS2 Layers on Sapphire

MRS Advances
2019-02 | Journal article
DOI: 10.1557/adv.2018.669
Part of ISSN: 2059-8521
Contributors: Annika Grundmann
Source: Self-asserted source
Annika Grundmann
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