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Works (13)

New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors

IEEE Transactions on Electron Devices
2023-02 | Journal article
DOI: 10.1109/TED.2022.3231233
Contributors: Zeyu Hu; Weidong Zhang; Robin Degraeve; Daniele Garbin; Zheng Chai; Nishant Saxena; Pedro Freitas; Andrea Fantini; Taras Ravsher; Sergiu Clima et al.
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Tailoring the synaptic properties of a-IGZO memristors for artificial deep neural networks

APL Materials
2022-01-01 | Journal article
DOI: 10.1063/5.0073056
Contributors: Maria Elias Pereira; Jonas Deuermeier; Pedro Freitas; Pedro Barquinha; Weidong Zhang; Rodrigo Martins; Elvira Fortunato; Asal Kiazadeh
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Cycling Induced Metastable Degradation in GeSe Ovonic Threshold Switching Selector

IEEE Electron Device Letters
2021-10 | Journal article
DOI: 10.1109/LED.2021.3109582
Contributors: Zheng Chai; Weidong Zhang; Sergiu Clima; Firas Hatem; Robin Degraeve; Qihui Diao; Jian Fu Zhang; Pedro Freitas; John Marsland; Andrea Fantini et al.
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Impact of RTN and Variability on RRAM-Based Neural Network

2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)
2020-11-03 | Other
DOI: 10.1109/icsict49897.2020.9278290
Contributors: P. Freitas; Z. Chai; W. Zhang; J. F. Zhang; J. Marsland
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Random-telegraph-noise-enabled true random number generator for hardware security

Scientific Reports
2020-10 | Journal article
DOI: 10.1038/s41598-020-74351-y
Part of ISSN: 2045-2322
Contributors: James Brown; Jian Fu Zhang; Bo Zhou; Mehzabeen Mehedi; Pedro Freitas; John Marsland; Zhigang Ji
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Stochastic Computing Based on Volatile GeSe Ovonic Threshold Switching Selectors

IEEE Electron Device Letters
2020-10 | Journal article
DOI: 10.1109/LED.2020.3017095
Contributors: Zheng Chai; Pedro Freitas; Wei Dong Zhang; Firas Hatem; Robin Degraeve; Sergiu Clima; Jian Fu Zhang; John Marsland; Andrea Fantini; Daniele Garbin et al.
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Committee machines—a universal method to deal with non-idealities in memristor-based neural networks

Nature Communications
2020-08 | Journal article
DOI: 10.1038/s41467-020-18098-0
Part of ISSN: 2041-1723
Contributors: D. Joksas; P. Freitas; Z. Chai; W. H. Ng; M. Buckwell; C. Li; W. D. Zhang; Q. Xia; A. J. Kenyon; A. Mehonic
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GeSe-Based Ovonic Threshold Switching Volatile True Random Number Generator

IEEE Electron Device Letters
2020-02 | Journal article
DOI: 10.1109/LED.2019.2960947
Contributors: Zheng Chai; Pedro Freitas; John Marsland; Andrea Fantini; Daniele Garbin; Ludovic Goux; Gouri Sankar Kar; Wei Shao; Weidong Zhang; James Brown et al.
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Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing program scheme

2019 IEEE International Electron Devices Meeting (IEDM)
2019 | Other
DOI: 10.1109/iedm19573.2019.8993448
Contributors: F. Hatem; J. F. Zhang; J. Marsland; P. Freitas; L. Goux; G. S. Kar; Z. Chai; W. Zhang; A. Fantini; R. Degraeve et al.
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Dependence of Switching Probability on Operation Conditions in GexSe1–x Ovonic Threshold Switching Selectors

IEEE Electron Device Letters
2019-08 | Journal article
DOI: 10.1109/LED.2019.2924270
Contributors: Zheng Chai; Weidong Zhang; Robin Degraeve; Sergiu Clima; Firas Hatem; Jian Fu Zhang; Pedro Freitas; John Marsland; Andrea Fantini; Daniele Garbin et al.
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Evidence of filamentary switching and relaxation mechanisms in GexSe1-xOTS selectors

2019 Symposium on VLSI Technology
2019-06 | Other
DOI: 10.23919/vlsit.2019.8776566
Contributors: Z. Chai; W. Zhang; R. Degraeve; S. Clima; F. Hatem; J. F. Zhang; P. Freitas; J. Marsland; A. Fantini; D. Garbin et al.
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Impact of RTN on Pattern Recognition Accuracy of RRAM-Based Synaptic Neural Network

IEEE Electron Device Letters
2018-11 | Journal article
DOI: 10.1109/LED.2018.2869072
Contributors: Zheng Chai; Pedro Freitas; Weidong Zhang; Firas Hatem; Jian Fu Zhang; John Marsland; Bogdan Govoreanu; Ludovic Goux; Gouri Sankar Kar
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The Over-Reset Phenomenon in Ta2O5 RRAM Device Investigated by the RTN-Based Defect Probing Technique

IEEE Electron Device Letters
2018-07 | Journal article
DOI: 10.1109/LED.2018.2833149
Contributors: Zheng Chai; Weidong Zhang; Pedro Freitas; Firas Hatem; Jian Fu Zhang; John Marsland; Bogdan Govoreanu; Ludovic Goux; Gouri Sankar Kar; Steve Hall et al.
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