Personal information

Activities

Employment (1)

Indian Institute of Technology BHU: Varanasi, Uttar Pradesh, IN

2022-12-15 to present | Assistant Professor (Electronics Engineering)
Employment
Source: Self-asserted source
Jaya Jha

Education and qualifications (2)

Indian Institute of Technology Bombay: Mumbai, Maharashtra, IN

2015-07 to 2021-08 | M.Tech.-Ph.D. (Electrical Engineering)
Education
Source: Self-asserted source
Jaya Jha

National Institute of Technology Raipur: Raipur, Chhattisgarh, IN

2011-07 to 2015-05 | B.Tech. (Electronics and Telecommunication Engineering)
Education
Source: Self-asserted source
Jaya Jha

Works (14)

A mixer architecture using GaN-based split-gate nanowire transistor

Nanotechnology
2024-10-07 | Journal article
Contributors: Jaya Jha; Sreenadh Surapaneni; Swaroop Ganguly; Dipankar Saha
Source: check_circle
Crossref

Effect of width scaling on RF and DC performance of AlGaN/GaN-based Ku-band multi-finger 250 nm high electron mobility transistor technology

Solid-State Electronics
2021 | Journal article
EID:

2-s2.0-85109525429

Part of ISSN: 00381101
Contributors: Jha, J.; Surapaneni, S.; Kumar, A.S.; Ganguly, S.; Saha, D.
Source: Self-asserted source
Jaya Jha via Scopus - Elsevier

GaN-based complementary inverter logic gate using InGaN/GaN superlattice capped enhancement-mode field-effect-transistors

Nanotechnology
2021 | Journal article
EID:

2-s2.0-85105906451

Part of ISSN: 13616528 09574484
Contributors: Jha, J.; Ganguly, S.; Saha, D.
Source: Self-asserted source
Jaya Jha via Scopus - Elsevier

High Power Broad C-band Amplifier Using AlGaN/GaN Based High Electron Mobility Transistors

2021 8th International Conference on Electrical and Electronics Engineering, ICEEE 2021
2021 | Conference paper
EID:

2-s2.0-85106529778

Contributors: Jha, J.; Yadav, Y.; Upadhyay, B.; Surapaneni, S.; Bhardwaj, N.; Ganguly, S.; Saha, D.
Source: Self-asserted source
Jaya Jha via Scopus - Elsevier

Rapid LUT Modelling Technique for GaN HEMT Based MMIC Technology

2021 IEEE MTT-S International Microwave and RF Conference (IMARC)
2021-12-17 | Conference paper
Source: Self-asserted source
Jaya Jha

Low-field mobility in an electrostatically confined 2D rectangular nanowire: effect of density of states and phonon confinement

Nanotechnology
2021-11-05 | Journal article
Contributors: Sreenadh Surapaneni; Jaya Jha; Vikas Pendem; Yogendra Kumar Yadav; Swaroop Ganguly; Dipankar Saha
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Improvements From SiC Substrate Thinning in AlGaN/GaN HEMTs: Disparate Effects on Contacts, Access and Channel Regions

IEEE Electron Device Letters
2021-05 | Journal article
Contributors: Bazila Parvez; Jaya Jha; Pankaj Upadhyay; Navneet Bhardwaj; Yogendra Yadav; Bhanu Upadhyay; Swaroop Ganguly; Dipankar Saha
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Off-State Degradation and Recovery in Oxide/AlGaN/GaN Heterointerfaces: Importance of Band Offset, Electron, and Hole Trapping

ACS Applied Electronic Materials
2020 | Journal article
EID:

2-s2.0-85090473964

Part of ISSN: 26376113
Contributors: Jha, J.; Meer, M.; Ganguly, S.; Saha, D.
Source: Self-asserted source
Jaya Jha via Scopus - Elsevier

Impact of Relative Gate Position on DC and RF Characteristics of High Performance AlGaN/GaN HEMTs

IEEE Transactions on Electron Devices
2020-10 | Journal article
Contributors: Yogendra K. Yadav; Bhanu B. Upadhyay; Jaya Jha; Swaroop Ganguly; Dipankar Saha
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Multi-finger high power gallium nitride based high electron mobility transistors

Proceedings - 2019 6th International Conference on Electrical and Electronics Engineering, ICEEE 2019
2019 | Conference paper
EID:

2-s2.0-85071474243

Contributors: Jha, J.; Surapaneni, S.; Akhil Kumar, S.; Ganguly, S.; Saha, D.
Source: Self-asserted source
Jaya Jha via Scopus - Elsevier

Evolution of field dependent carrier trapping during off-state degradation for GaN based metal oxide semiconductor high electron mobility transistors

Journal of Applied Physics
2018 | Journal article
EID:

2-s2.0-85055634879

Part of ISSN: 10897550 00218979
Contributors: Jha, J.; Upadhyay, B.B.; Takhar, K.; Bhardwaj, N.; Ganguly, S.; Saha, D.
Source: Self-asserted source
Jaya Jha via Scopus - Elsevier

Geometric contribution leading to anomalous estimation of two-dimensional electron gas density in GaN based heterostructures

Journal of Applied Physics
2018 | Journal article
EID:

2-s2.0-85047756863

Part of ISSN: 10897550 00218979
Contributors: Upadhyay, B.B.; Jha, J.; Takhar, K.; Ganguly, S.; Saha, D.
Source: Self-asserted source
Jaya Jha via Scopus - Elsevier

Surface stoichiometry modification and improved DC/RF characteristics by plasma treated and annealed AlGaN/GaN HEMTs

Solid-State Electronics
2018 | Journal article
EID:

2-s2.0-85034845323

Part of ISSN: 00381101
Contributors: Upadhyay, B.B.; Takhar, K.; Jha, J.; Ganguly, S.; Saha, D.
Source: Self-asserted source
Jaya Jha via Scopus - Elsevier

Modified angelov model for an exploratory GaN-HEMT technology with short, few-fingered gates

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
2017 | Conference paper
EID:

2-s2.0-85039053230

Contributors: Emekar, S.; Jha, J.; Mukherjee, S.; Meer, M.; Takhar, K.; Saha, D.; Ganguly, S.
Source: Self-asserted source
Jaya Jha via Scopus - Elsevier

Peer review (19 reviews for 2 publications/grants)

Review activity for Journal of applied physics. (1)
Review activity for Journal of electronic materials. (18)