Personal information

Other IDs

Scopus Author ID: 16316158900
ResearcherID: P-9795-2016

Countries

Norway

Activities

Collapse all

Works (37)

Analytical Modeling of Laterally Excited Acoustic Plate Resonators

2023 IEEE International Ultrasonics Symposium (IUS)
2023-09-03 | Journal article
DOI: 10.1109/ius51837.2023.10307872
Contributors: Vegard Tollefsen; Hamed Salmani; Agne Johannessen; Ulrik Hanke
Source: Self-asserted source
Agne Johannessen

Improved Crystallinity of Annealed 0002 AlN Films on Sapphire Substrate

Materials
2023-03-14 | Journal article
DOI: 10.3390/ma16062319
Part of ISSN: 1996-1944
Contributors: Bruno Bersch; Tomàs Caminal Ros; Vegard Tollefsen; Erik Johannessen; Agne Johannessen
Source: Self-asserted source
Agne Johannessen

Signal Amplification of a Gravimetric Glucose Biosensor Based on the Concanavalin A–Dextran Affinity Assay

IEEE Sensors Journal
2021-02-15 | Journal article
DOI: 10.1109/JSEN.2020.3032647
Contributors: Trinh Bich Hoang; Bjorn Torger Stokke; Ulrik Hanke; Erik Andrew Johannessen; Agne Johannessen
Source: check_circle
Crossref

The impact of area on BAW resonator performance and an approach to device miniaturization

Ultrasonics
2019-04 | Journal article
DOI: 10.1016/j.ultras.2018.11.014
Part of ISSN: 0041-624X
Source: Self-asserted source
Agne Johannessen

The Characterisation and Quantification of Immobilised Concanavalin A on Quartz Surfaces Based on The Competitive Binding to Glucose and Fluorescent Labelled Dextran

Applied Sciences
2019-01-17 | Journal article
DOI: 10.3390/app9020318
Part of ISSN: 2076-3417
Source: Self-asserted source
Agne Johannessen

A Design Approach for High-Q FBARs With a Dual-Step Frame

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
2018-09 | Journal article
DOI: 10.1109/TUFFC.2018.2846810
Contributors: Ngoc Nguyen; Agne Johannessen; Stig Rooth; Ulrik Hanke
Source: check_circle
Crossref

Design of a Love wave mode device for use in a microfabricated glucose sensor

2016 IEEE International Frequency Control Symposium, IFCS 2016 - Proceedings
2016 | Conference paper
DOI: 10.1109/FCS.2016.7546826
EID:

2-s2.0-84990986112
Contributors: Hoang, T.B.; Hanke, U.; Johannessen, E.A.; Johannessen, A.
Source: Self-asserted source
Agne Johannessen via Scopus - Elsevier

Improvement of methods in analyzing the propagation of plate waves in FBARs

2016 IEEE International Frequency Control Symposium, IFCS 2016 - Proceedings
2016 | Conference paper
DOI: 10.1109/FCS.2016.7546791
EID:

2-s2.0-84990957248
Contributors: Nguyen, N.; Rooth, S.; Johannessen, A.; Hanke, U.
Source: Self-asserted source
Agne Johannessen via Scopus - Elsevier

Excitonic light emission decay time measurements in moderately<i>δ</i>-doped GaAs/AlAs multiple quantum wells

Lithuanian Journal of Physics
2016-01-11 | Journal article
DOI: 10.3952/physics.v55i4.3222
Part of ISSN: 1648-8504
Part of ISSN: 2424-3647
Contributors: Jurgis Kundrotas; Aurimas Čerškus; Gintaras Valušis; Edmund Harold Linfield; Eric Johannessen; Agne Johannessen
Source: Self-asserted source
Agne Johannessen

Excitonic light emission decay time measurements in moderately δ-doped GaAs/AlAs multiple quantum wells | Eksitoninės spinduliuotės gesimo trukmių matavimai vidutiniškai δ-legiruotuose GaAs/AlAs kartotiniuose kvantiniuose šuliniuose

Lithuanian Journal of Physics
2015 | Journal article
EID:

2-s2.0-84955480698
Contributors: Kundrotas, J.; Čerškus, A.; Valušis, G.; Linfield, E.H.; Johannessen, E.; Johannessen, A.
Source: Self-asserted source
Agne Johannessen via Scopus - Elsevier

Peculiarities of photoluminescence of vertical n &lt;sup&gt;+&lt;/sup&gt;/n-GaAs/Al&lt;inf&gt;0.25&lt;/inf&gt;Ga&lt;inf&gt;0.75&lt;/inf&gt;As MBE- and MOCVD-grown structures designed for microwave detectors

Applied Physics A: Materials Science and Processing
2015 | Journal article
DOI: 10.1007/s00339-015-9292-z
EID:

2-s2.0-84938973756
Contributors: Čerškus, A.; Kundrotas, J.; Sužiedėlis, A.; Gradauskas, J.; Ašmontas, S.; Johannessen, E.; Johannessen, A.
Source: Self-asserted source
Agne Johannessen via Scopus - Elsevier

Dynamics of free carriers – neutral impurity related optical transitions in Be and Si δ-doped GaAs/AlAs multiple quantum wells: Fractional-dimensional space approach

Lithuanian Journal of Physics
2015-01-21 | Journal article
DOI: 10.3952/physics.v54i4.3012
Part of ISSN: 1648-8504
Part of ISSN: 1648-8504
Contributors: Jurgis Kundrotas; Aurimas Čerškus; Gintaras Valušis; Edmund H. Linfield; Erik Johannessen; Agne Johannessen
Source: Self-asserted source
Agne Johannessen
grade
Preferred source (of 2)‎

Design of high-Q Thin Film Bulk Acoustic resonator using dual-mode reflection

IEEE International Ultrasonics Symposium, IUS
2014 | Conference paper
DOI: 10.1109/ULTSYM.2014.0121
EID:

2-s2.0-84910028519
Contributors: Nguyen, N.; Johannessen, A.; Hanke, U.
Source: Self-asserted source
Agne Johannessen via Scopus - Elsevier

Dynamics of free carriers - neutral impurity related optical transitions in Be and Si δ-doped GaAs/AlAs multiple quantum wells: Fractional-dimensional space approach | Krūvininkų optinių šuolių į neutraliąsias priemaišas dinamika Be ir Si δ-legiruotose GaAs/AlAs kartotinėse kvantinėse duobėse: Trupmeninio matumo er dvės artėjimas

Lithuanian Journal of Physics
2014 | Journal article
EID:

2-s2.0-84921841966
Contributors: Kundrotas, J.; Čerškus, A.; Valušis, G.; Linfeld, E.H.; Johannessen, E.; Johannessen, A.
Source: Self-asserted source
Agne Johannessen via Scopus - Elsevier

The Increase of Radiative lifetime of free excitons in selectively Si-doped GaAs/Al<inf>x</inf>Ga<inf>1-x</inf>As heterostructures | Selektyviai Si donorais legiruotu{ogonek} GaAs-Al<inf>x</inf>Ga<inf>1-x</inf>As heterodariniu{ogonek} laisvojo eksitono spindulinės gyvavimo trukmės pailgėjimas

Medziagotyra
2014 | Journal article
DOI: 10.5755/j01.ms.20.2.6329
EID:

2-s2.0-84902684550
Contributors: Kundrotas, J.; Čerškus, A.; Nargeliene, V.; Sužiedelis, A.; Ašmontas, S.; Gradauskas, J.; Johannessen, E.; Johannessen, A.
Source: Self-asserted source
Agne Johannessen via Scopus - Elsevier

Dynamic photoluminescence studies of vertical n<sup>+</sup>/n-GaAs/Al <inf>0.2</inf>Ga<inf>0.8</inf>As structures designed for microwave electronics

Physica Scripta
2013 | Journal article
DOI: 10.1088/0031-8949/87/06/065701
EID:

2-s2.0-84878533830
Contributors: Čerškus, A.; Kundrotas, J.; Nargeliene, V.; Sužiedelis, A.; Ašmontas, S.; Gradauskas, J.; Johannessen, A.; Johannessen, E.
Source: Self-asserted source
Agne Johannessen via Scopus - Elsevier

Photoluminescence lifetimes in GaAs/Al<inf>0.3</inf>Ga<inf>0.7</inf>As structures designed for microwave and terahertz detectors | Mikrobangu{ogonek} ir terahercu{ogonek} detektoriams skirtu{ogonek} GaAs/A<inf>l0</inf>.3Ga0.7As dariniu{ogonek} fotoliuminescencijos trukmės

Lithuanian Journal of Physics
2013 | Journal article
DOI: 10.3952/lithjphys.53206
EID:

2-s2.0-84880835006
Contributors: Čerškus, A.; Kundrotas, J.; Nargeliene, V.; Sužiedelis, A.; Ašmontas, S.; Gradauskas, J.; Johannessen, E.; Johannessen, A.
Source: Self-asserted source
Agne Johannessen via Scopus - Elsevier

Dynamic photoluminescence studies of vertical n+/n-GaAs/Al0.2Ga0.8As structures designed for microwave electronics

Physica Scripta
2013-03-20 | Journal article
Source: Self-asserted source
Agne Johannessen

Light emission lifetimes in p-type δ-doped GaAs/AlAs multiple quantum wells near the Mott transition

Journal of Applied Physics
2012 | Journal article
DOI: 10.1063/1.4745893
EID:

2-s2.0-84865848798
Contributors: Kundrotas, J.; Čerškus, A.; Valušis, G.; Li, L.H.; Linfield, E.H.; Johannessen, A.; Johannessen, E.
Source: Self-asserted source
Agne Johannessen via Scopus - Elsevier

Enhanced light emission in nanostructures | Šviesos emisijos sustiprėjimas nanodariniuose

Lithuanian Journal of Physics
2011 | Journal article
DOI: 10.3952/lithjphys.51404
EID:

2-s2.0-84857081628
Contributors: Kundrotas, J.; Čerškus, A.; Nargeliene, V.; Sužiedelis, A.; Ašmontas, S.; Gradauskas, J.; Johannessen, A.; Johannessen, E.
Source: Self-asserted source
Agne Johannessen via Scopus - Elsevier

Enhancement of the Excitonic Photoluminescence in n<sup>+</sup>=i-GaAs by Controlling the Thickness and Impurity Concentration of the n<sup>+</sup> Layer

Acta Physica Polonica A
2011 | Journal article
EID:

2-s2.0-79751490878
Contributors: Cerškus, A.; Nargeliene, V.; Kundrotas, J.; Sužiedelis, A.; Ašmontas, S.; Gradauskas, J.; Johannessen, A.; Johannessen, E.
Source: Self-asserted source
Agne Johannessen via Scopus - Elsevier

Photoluminescence characterisation of GaAs/AlGaAs structures designed for microwave and terahertz detectors | Mikrobangu{ogonek} ir terahercu{ogonek} detektoriams skirtu{ogonek} gaas/algaas dariniu{ogonek} fotoliuminescencijos apibūdinimas

Lithuanian Journal of Physics
2011 | Journal article
DOI: 10.3952/lithjphys.51406
EID:

2-s2.0-84857094496
Contributors: Čerškus, A.; Kundrotas, J.; Nargeliene, V.; Sužiedelis, A.; Ašmontas, S.; Gradauskas, J.; Johannessen, A.; Johannessen, E.
Source: Self-asserted source
Agne Johannessen via Scopus - Elsevier

Enhancement of the Excitonic Photoluminescence in n<sup>+</sup>/i-GaAs by Controlling the Thickness and Impurity Concentration of the n<sup>+</sup>Layer

Acta Physica Polonica A
2011-02 | Journal article
DOI: 10.12693/aphyspola.119.154
Part of ISSN: 0587-4246
Part of ISSN: 1898-794X
Contributors: A. Čerškus; V. Nargelienė; J. Kundrotas; A. Sužiedėlis; S. Ašmontas; J. Gradauskas; A. Johannessen; E. Johannessen
Source: Self-asserted source
Agne Johannessen

Impurity-related photoluminescence line shape asymmetry in GaAs/AlAs multiple quantum wells: Fractional-dimensional space approach

Journal of Applied Physics
2010 | Journal article
DOI: 10.1063/1.3342673
EID:

2-s2.0-77957726169
Contributors: Kundrotas, J.; Čerškus, A.; Valušis, G.; Johannessen, A.; Johannessen, E.; Harrison, P.; Linfield, E.H.
Source: Self-asserted source
Agne Johannessen via Scopus - Elsevier

Enhanced exciton photoluminescence in the selectively Si-doped GaAs/AlxGa1−xAs heterostructures

Journal of Applied Physics
2010-09-15 | Journal article
DOI: 10.1063/1.3483240
Part of ISSN: 0021-8979
Part of ISSN: 1089-7550
Source: Self-asserted source
Agne Johannessen
grade
Preferred source (of 2)‎

Phonon sidebands in photoluminescence of beryllium δ-doped GaAs/AlAs multiple quantum wells

Proceedings of SPIE - The International Society for Optical Engineering
2007 | Conference paper
DOI: 10.1117/12.726488
EID:

2-s2.0-34249089180
Contributors: Kundrotas, J.; Čerškus, A.; Johannessen, A.; Ašmontas, S.; Valušis, G.; Halsall, M.P.; Harrison, P.
Source: Self-asserted source
Agne Johannessen via Scopus - Elsevier

Behaviour of optical transitions in GaAs/AlAs with highly Be δ-doped MQWs

Lithuanian Journal of Physics
2005 | Journal article
DOI: 10.3952/lithjphys.45307
Part of ISSN: 1648-8504
Source: Self-asserted source
Agne Johannessen

Dependence of anisotropy and damping on shape and aspect ratio in micron sized Ni81Fe19 elements

Journal of Applied Physics
2004-06 | Journal article
DOI: 10.1063/1.1687273
Part of ISSN: 0021-8979
Part of ISSN: 1089-7550
Source: Self-asserted source
Agne Johannessen

Shape-dependent anisotropy and damping of picosecond magnetisation dynamics in a micron sized Ni81Fe19 element

Journal of Magnetism and Magnetic Materials
2004-05 | Journal article
DOI: 10.1016/j.jmmm.2003.12.1364
Part of ISSN: 0304-8853
Source: Self-asserted source
Agne Johannessen

Imaging the dephasing of spin wave modes in a square thin film magnetic element

Physical Review B
2004-05-26 | Journal article
DOI: 10.1103/physrevb.69.174426
Part of ISSN: 1098-0121
Part of ISSN: 1550-235X
Source: Self-asserted source
Agne Johannessen

Lorentz microscopy analysis of arrays of rhombic elements

IEEE Transactions on Magnetics
2003-09 | Journal article
DOI: 10.1109/tmag.2003.815553
Part of ISSN: 0018-9464
Source: Self-asserted source
Agne Johannessen

Observation of incoherent picosecond magnetisation dynamics in micron sized Ni81Fe19 elements by time resolved scanning Kerr effect microscopy

IEE Proceedings - Science, Measurement and Technology
2003-09-01 | Journal article
DOI: 10.1049/ip-smt:20030868
Part of ISSN: 1350-2344
Part of ISSN: 1359-7094
Source: Self-asserted source
Agne Johannessen

Anisotropy, damping, and coherence of magnetization dynamics in a 10 μm square Ni81Fe19 element

Applied Physics Letters
2003-05-05 | Journal article
DOI: 10.1063/1.1572969
Part of ISSN: 0003-6951
Part of ISSN: 1077-3118
Source: Self-asserted source
Agne Johannessen

Interactions in magnetic arrays for storage and computation

Microelectronic Engineering
2001-09 | Journal article
DOI: 10.1016/s0167-9317(01)00561-5
Part of ISSN: 0167-9317
Source: Self-asserted source
Agne Johannessen

Excitonic photoluminescence quenching by impact ionization of excitons and donors inGaAs/Al0.35Ga0.65Asquantum wells with an in-plane electric field

Physical Review B
2000-12-15 | Journal article
DOI: 10.1103/physrevb.62.15871
Part of ISSN: 0163-1829
Part of ISSN: 1095-3795
Source: Self-asserted source
Agne Johannessen

Influence of Electric Field on Photoluminescence Quenching in GaAs/AlGaAs Quantum Wells

Materials Science Forum
1998-12 | Journal article
DOI: 10.4028/www.scientific.net/msf.297-298.253
Part of ISSN: 1662-9752
Source: Self-asserted source
Agne Johannessen

Landau energy functions and coefficients for patterned magnetic arrays

Digest of INTERMAG 2003. International Magnetics Conference (Cat. No.03CH37401)
Journal article
DOI: 10.1109/intmag.2003.1230642
Contributors: A. Kundrotaite; M. Rahman; J.N. Chapman
Source: Self-asserted source
Agne Johannessen
How many people are using ORCID?