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Employment (3)

University of Glasgow: Glasgow, GB

2022-08-01 to present | Research Fellow (School of Engineering)
Employment
Source: Self-asserted source
Muhammad M A Mirza

University of Glasgow: Glasgow, Glasgow, GB

2015-10-01 to 2022-07-31 | Research Associate (School of Engineering)
Employment
Source: Self-asserted source
Muhammad M A Mirza

University of Glasgow: Glasgow, Glasgow, GB

2015-05-01 to 2015-09-30 | Research Assistant (School of Engineering)
Employment
Source: Self-asserted source
Muhammad M A Mirza

Education and qualifications (2)

University of Glasgow: Glasgow, Glasgow, GB

2010-06-01 to 2015-04-01 | PhD in Electronics & Electrical Engineering (School of Engineering)
Education
Source: Self-asserted source
Muhammad M A Mirza

University of Glasgow: Glasgow, Glasgow, GB

2009-01-01 to 2010-01-01 | MSc in Electronics & Electrical Engineering (School of Engineering)
Education
Source: Self-asserted source
Muhammad M A Mirza

Works (10)

THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures

Applied Physics Letters
2021-03-08 | Journal article
DOI: 10.1063/5.0041327
Contributors: David Stark; Muhammad Mirza; Luca Persichetti; Michele Montanari; Sergej Markmann; Mattias Beck; Thomas Grange; Stefan Birner; Michele Virgilio; Chiara Ciano et al.
Source: check_circle
Crossref

3D LIDAR imaging using Ge-on-Si single–photon avalanche diode detectors

Optics Express
2020-01-08 | Journal article
Source: Self-asserted source
Muhammad M A Mirza

High performance planar germanium-on-silicon single-photon avalanche diode detectors

Nature Communications
2019-03-06 | Journal article
DOI: 10.1038/s41467-019-08830-w
Contributors: Peter Vines; Kateryna Kuzmenko; Jarosław Kirdoda; Derek C. S. Dumas; Muhammad M. Mirza; Ross W. Millar; Douglas J. Paul; Gerald S. Buller
Source: check_circle
Crossref

Quantum interference in silicon one-dimensional junctionless nanowire field-effect transistors

Phys. Rev. B
2018-12-26 | Journal article
Source: Self-asserted source
Muhammad M A Mirza

Impact of Randomly Distributed Dopants on Ω -Gate Junctionless Silicon Nanowire Transistors

IEEE Transactions on Electron Devices
2018-04-02 | Journal article
Source: Self-asserted source
Muhammad M A Mirza

One dimensional transport in silicon nanowire junction-less field effect transistors

Scientific Reports
2017-06-07 | Journal article
DOI: 10.1038/s41598-017-03138-5
Contributors: Muhammad M. Mirza; Felix J. Schupp; Jan A. Mol; Donald A. MacLaren; G. Andrew D. Briggs; Douglas J. Paul
Source: check_circle
Crossref

Experimental and Simulation Study of Silicon Nanowire Transistors Using Heavily Doped Channels

IEEE Transactions on Nanotechnology
2017-02-08 | Journal article
Source: Self-asserted source
Muhammad M A Mirza

Design and fabrication of memory devices based on nanoscale polyoxometalate clusters

Nature
2014-11-19 | Journal article
Source: Self-asserted source
Muhammad M A Mirza

Determining the Electronic Performance Limitations in Top-Down-Fabricated Si Nanowires with Mean Widths Down to 4 nm

Nano Letters
2014-10-09 | Journal article
Source: Self-asserted source
Muhammad M A Mirza

Nanofabrication of high aspect ratio (∼50:1) sub-10 nm silicon nanowires using inductively coupled plasma etching

Journal of Vacuum Science & Technology B
2012-09-27 | Journal article
Source: Self-asserted source
Muhammad M A Mirza
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