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Works (7)

Passivation of hole traps in SiO2/GaN metal-oxide-semiconductor devices by high-density magnesium doping

Applied Physics Express
2023-10-01 | Journal article
DOI: 10.35848/1882-0786/acfc95
Contributors: Hidetoshi Mizobata; Mikito Nozaki; Takuma Kobayashi; Takayoshi Shimura; Heiji Watanabe
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Interface and oxide trap states of SiO2/GaN metal–oxide–semiconductor capacitors and their effects on electrical properties evaluated by deep level transient spectroscopy

Journal of Applied Physics
2023-09-07 | Journal article
DOI: 10.1063/5.0165894
Contributors: Shingo Ogawa; Hidetoshi Mizobata; Takuma Kobayashi; Takayoshi Shimura; Heiji Watanabe
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Formation of high-quality SiO2/GaN interfaces with suppressed Ga-oxide interlayer via sputter deposition of SiO2

Japanese Journal of Applied Physics
2023-05-01 | Journal article
DOI: 10.35848/1347-4065/acd1ca
Contributors: Kentaro Onishi; Takuma Kobayashi; Hidetoshi Mizobata; Mikito Nozaki; Akitaka Yoshigoe; Takayoshi Shimura; Heiji Watanabe
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Reduction of interface and oxide traps in SiO2/GaN MOS structures by oxygen and forming gas annealing

Applied Physics Express
2023-03-01 | Journal article
DOI: 10.35848/1882-0786/acc1bd
Contributors: Bunichiro Mikake; Takuma Kobayashi; Hidetoshi Mizobata; Mikito Nozaki; Takayoshi Shimura; Heiji Watanabe
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Electrical properties and energy band alignment of SiO2/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN(0001¯) substrates

Applied Physics Letters
2022-08-08 | Journal article
DOI: 10.1063/5.0095468
Contributors: Hidetoshi Mizobata; Kazuki Tomigahara; Mikito Nozaki; Takuma Kobayashi; Akitaka Yoshigoe; Takuji Hosoi; Takayoshi Shimura; Heiji Watanabe
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Fixed-charge generation in SiO2/GaN MOS structures by forming gas annealing and its suppression by controlling Ga-oxide interlayer growth

Japanese Journal of Applied Physics
2022-05-01 | Journal article
DOI: 10.35848/1347-4065/ac44cd
Contributors: Hidetoshi Mizobata; Mikito Nozaki; Takuma Kobayashi; Takuji Hosoi; Takayoshi Shimura; Heiji Watanabe
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Insight into interface electrical properties of metal–oxide–semiconductor structures fabricated on Mg-implanted GaN activated by ultra-high-pressure annealing

Applied Physics Letters
2022-02-21 | Journal article
DOI: 10.1063/5.0081198
Contributors: Yuhei Wada; Hidetoshi Mizobata; Mikito Nozaki; Takuma Kobayashi; Takuji Hosoi; Tetsu Kachi; Takayoshi Shimura; Heiji Watanabe
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