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Education and qualifications (1)

Stony Brook University: Stony Brook, New York, US

2024-08 | PhD (Materials Science and Chemical Engineering)
Education
Source: Self-asserted source
QIANYU CHENG

Works (9)

Analysis of Threading Edge Dislocation Low-Angle Grain Boundary Network Distributions in 4H-SiC Wafers Through Synchrotron X-ray Topography and Ray-Tracing Simulation

Journal of Electronic Materials
2025-02-12 | Journal article
DOI: 10.1007/s11664-025-11793-y
Contributors: Qianyu Cheng; Zeyu Chen; Shanshan Hu; Balaji Raghothamachar; Michael Dudley
Source: check_circle
Crossref

Nucleation of Dislocations from Scratches on the Surface of PVT-Grown 4H-SiC Wafers

Journal of Electronic Materials
2025-01-27 | Journal article
DOI: 10.1007/s11664-025-11743-8
Part of ISSN: 0361-5235
Part of ISSN: 1543-186X
Contributors: SHANSHAN HU; Zeyu Chen; Qianyu Cheng; Balaji Raghothamachar; Michael Dudley
Source: Self-asserted source
QIANYU CHENG

Characterization of Growth Sectors in Gallium Nitride Substrate Wafers

Solid State Phenomena
2024-08-27 | Journal article
DOI: 10.4028/p-z5xalb
Part of ISSN: 1662-9779
Contributors: Yafei Liu; Shanshan Hu; Ze Yu Chen; Qian Yu Cheng; Ming Kit Cheng; Wei Zhao; Temel Buyuklimanli; Balaji Raghothamachar; Michael Dudley
Source: Self-asserted source
QIANYU CHENG

Analysis of dislocation configurations in SiC crystals through X-ray topography aided by ray tracing simulations

Materials Science in Semiconductor Processing
2024-05 | Journal article
DOI: 10.1016/j.mssp.2024.108207
Part of ISSN: 1369-8001
Contributors: Qianyu Cheng; Zeyu Chen; Shanshan Hu; Yafei Liu; Balaji Raghothamachar; Michael Dudley
Source: Self-asserted source
QIANYU CHENG

Analysis of strain in ion implanted 4H-SiC by fringes observed in synchrotron X-ray topography

Journal of Crystal Growth
2024-02 | Journal article
DOI: 10.1016/j.jcrysgro.2023.127535
Contributors: Zeyu Chen; Yafei Liu; Qianyu Cheng; Shanshan Hu; Balaji Raghothamachar; Michael Dudley
Source: check_circle
Crossref

Investigation of defect formation at the early stage of PVT-grown 4H-SiC crystals

Journal of Crystal Growth
2024-02 | Journal article
DOI: 10.1016/j.jcrysgro.2023.127542
Contributors: Shanshan Hu; Yafei Liu; Qianyu Cheng; Zeyu Chen; Xiao Tong; Balaji Raghothamachar; Michael Dudley
Source: check_circle
Crossref

Crystal Defect Investigation in PVT-Grown ZnSe Under Different Seeding Conditions and Growth Configurations Using Synchrotron X-Ray Topography

ECS Transactions
2021-10-01 | Journal article
DOI: 10.1149/10405.0003ecst
Part of ISSN: 1938-5862
Part of ISSN: 1938-6737
Contributors: Qianyu Cheng; Zeyu Chen; Hongyu Peng; Yafei Liu; Shanshan Hu; Balaji Raghothamachar; Michael Dudley
Source: Self-asserted source
QIANYU CHENG

Characterization of Dislocations in 6H-SiC Wafer Through X-Ray Topography and Ray-Tracing Simulations

Journal of Electronic Materials
2021-07-26 | Journal article
DOI: 10.1007/s11664-021-08888-7
Contributors: Qianyu Cheng; Tuerxun Ailihumaer; Yafei Liu; Hongyu Peng; Zeyu Chen; Balaji Raghothamachar; Michael Dudley
Source: check_circle
Crossref

Analysis of Dislocations in PVT-Grown 6H-SiC through Grazing-Incidence X-Ray Topographic Images and Ray-Tracing Simulation

ECS Transactions
2020-09-08 | Journal article
DOI: 10.1149/09806.0133ecst
Part of ISSN: 1938-5862
Part of ISSN: 1938-6737
Contributors: Qianyu Cheng; Tuerxun Ailihumaer; Hongyu Peng; Yafei Liu; Balaji Raghothamachar; Michael Dudley
Source: Self-asserted source
QIANYU CHENG
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