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Scopus Author ID: 55315418000
Scopus Author ID: 57216440314

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SR Engineering College: Warangal, Telangana, IN

2021-01-04 to present | Associate Professor (Electronics and communication engineering)
Employment
Source: Self-asserted source
AJAYAN J

Works (50 of 64)

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Page 1 of 2

Challenges and Advances in Materials and Fabrication Technologies for the Development of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review

IEEE Access
2025 | Journal article
DOI: 10.1109/ACCESS.2025.3555845
Contributors: J. Ajayan; Vakkalakula Bharath Sreenivasulu; N. Aruna Kumari; S. Sreejith; Subhajit Das
Source: check_circle
Crossref

Development of biodegradable PLA/Nanoclay/ZnO polymer films for future Industrial packaging applications

Results in Surfaces and Interfaces
2025-05 | Journal article
DOI: 10.1016/j.rsurfi.2025.100518
Contributors: A. Akshaykranth; J. Ajayan; N. Anitha
Source: check_circle
Crossref

Comprehensive evaluation of T-gated AlN/GaN/SiC MOSHEMTs with ZrO2/Al2O3 dielectrics towards performance enhancement through lateral scaling and passivation optimization for power switching and RF applications

Micro and Nanostructures
2025-03 | Journal article
DOI: 10.1016/j.micrna.2025.208080
Contributors: Lavanya Repaka; J. Ajayan; Sandip Bhattacharya; B. Mounika
Source: check_circle
Crossref

A Novel LG = 40 nm AlN-GDC-HEMT on SiC Wafer With fT/IDS,peak of 400 GHz/3.18 mA/mm for Future RF Power Amplifiers

IEEE Access
2024 | Journal article
DOI: 10.1109/ACCESS.2024.3455559
Contributors: B. Mounika; Asisa Kumar Panigrahy; J. Ajayan; N. Khadar Basha; Vakkalakula Bharath Sreenivasulu; M. Durga Prakash; Sandip Bhattacharya; D. Nirmal
Source: check_circle
Crossref

Accomplishing Low-Power Consumption with TFET

2024 | Book chapter
DOI: 10.1007/978-981-99-6649-3_31
Contributors: M. Saravanan; J. Ajayan; Eswaran Parthasarathy; S. Sreejith
Source: check_circle
Crossref

Design and Analysis of dual-k spacer CombFET for Digital and Synaptic Applications

IEEE Access
2024 | Journal article
DOI: 10.1109/ACCESS.2024.3414611
Contributors: N. Aruna Kumari; Srinivasa Rao Karumuri; J. Ajayan; Vikas Vijayvargiya; Abhishek Kumar Upadhyay; M. Uma; A. Sai Kumar
Source: check_circle
Crossref

Performance Comparison of Nanosheet FET, CombFET, and TreeFET: Device and Circuit Perspective

IEEE Access
2024 | Journal article
DOI: 10.1109/ACCESS.2024.3352642
Contributors: Neelam Aruna Kumari; V. Bharath Sreenivasulu; Vikas Vijayvargiya; Abhishek Kumar Upadhyay; J. Ajayan; M. Uma
Source: check_circle
Crossref

A Review of GaN Channel-Based MOSHEMTs for Next-Generation Medium/Low-Voltage Rating and High-Speed RF Power Applications

Journal of Electronic Materials
2024-08 | Journal article
DOI: 10.1007/s11664-024-11177-8
Contributors: Gauri Deshpande; Sandip Bhattacharya; J. Ajayan; B. Mounika; D. Nirmal
Source: check_circle
Crossref

Exploration on the impact of barrier thickness, gate recess, and lateral scaling on AlGaN/GaN SRL HEMT on silicon for future RF power electronics

Journal of Materials Science: Materials in Electronics
2024-05 | Journal article
DOI: 10.1007/s10854-024-12747-6
Contributors: A. Akshaykranth; J. Ajayan; Sandip Bhattacharya; B. Mounika
Source: check_circle
Crossref

A new Vertical C-shaped Silicon Channel Nanosheet FET with Stacked High-K Dielectrics for Low Power Applications

Silicon
2024-04 | Journal article
DOI: 10.1007/s12633-024-02871-7
Contributors: Angelin Delighta A; Binola K Jebalin. I.V; J. Ajayan; S. Angen Franklin; D. Nirmal
Source: check_circle
Crossref

An intensive study on organic thin film transistors (OTFTs) for future flexible/wearable electronics applications

Micro and Nanostructures
2024-03 | Journal article
DOI: 10.1016/j.micrna.2024.207766
Contributors: J. Ajayan; S. Sreejith; M. Manikandan; V. Bharath Sreenivasulu; N. Aruna Kumari; Ajith Ravindran
Source: check_circle
Crossref

Organic Electrochemical Transistors (OECTs): Advancements and Exciting Prospects for Future Biosensing Applications

IEEE Transactions on Electron Devices
2023 | Journal article
DOI: 10.1109/TED.2023.3271960
Contributors: J. Ajayan; P. Mohankumar; Ribu Mathew; Laxman Raju Thoutam; Brajesh Kumar Kaushik; D. Nirmal
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Crossref

Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future RF electronic applications

Microelectronics Journal
2023-10 | Journal article
DOI: 10.1016/j.mejo.2023.105923
Contributors: B. Mounika; J. Ajayan; Sandip Bhattacharya; D. Nirmal; V. Bharath Sreenivasulu; N. Aruna Kumari
Source: check_circle
Crossref

AlexNet‐NDTL: Classification of MRI brain tumor images using modified AlexNet with deep transfer learning and Lipschitz‐based data augmentation

International Journal of Imaging Systems and Technology
2023-07 | Journal article
DOI: 10.1002/ima.22870
Contributors: Sreedhar Kollem; Katta Ramalinga Reddy; Ch. Rajendra Prasad; Avishek Chakraborty; J. Ajayan; S. Sreejith; Sandip Bhattacharya; L. M. I. Leo Joseph; Ravichander Janapati
Source: check_circle
Crossref

A critical review of fabrication challenges and reliability issues in top/bottom gated MoS2 field-effect transistors

Nanotechnology
2023-06-04 | Journal article
DOI: 10.1088/1361-6528/acb826
Contributors: Laxman Raju Thoutam; Ribu Mathew; J Ajayan; Shubham Tayal; Shantikumar V Nair
Source: check_circle
Crossref

Spacer Engineering on Nanosheet FETs towards Device and Circuit Perspective

ECS Journal of Solid State Science and Technology
2023-05-01 | Journal article
DOI: 10.1149/2162-8777/acd65e
Contributors: N. Aruna Kumari; V. Bharath Sreenivasulu; J. Ajayan; T. Janardhan Reddy; P. Prithvi
Source: check_circle
Crossref

Analog/RF Performance Evaluation of InAs-InGaAs-GAA-TFET

2023-04-19 | Conference paper
DOI: 10.1109/RAEEUCCI57140.2023.10134372
Contributors: M Saravanan; Eswaran Parthasarathy; K Ramkumar; J Ajayan
Source: check_circle
Crossref

Analog/RF Performance Analysis of TFET Device

2023-04-04 | Book chapter
DOI: 10.1201/9781003327035-7
Contributors: M. Saravanan; K. Ramkumar; Eswaran Parthasarathy; J. Ajayan
Source: check_circle
Crossref

Investigation on Fe-Doped AlGaN/GaN HEMT at 148 GHz Using E-FPL Technology for High-Frequency Communication Systems

ECS Journal of Solid State Science and Technology
2023-03-01 | Journal article
DOI: 10.1149/2162-8777/acc093
Contributors: S. Angen Franklin; Binola K Jebalin I. V; Subhash Chander; Raj Kumar; J. Ajayan; D. Nirmal
Source: check_circle
Crossref

Incorporating Bottom-Up Approach Into Device/Circuit Co-Design for SRAM-Based Cache Memory Applications

IEEE Transactions on Electron Devices
2022-11 | Journal article
DOI: 10.1109/TED.2022.3210070
Contributors: Shubham Tayal; Billel Smaani; Shiromani Balmukund Rahi; Abhishek Kumar Upadhyay; Sandip Bhattacharya; J. Ajayan; Biswajit Jena; Ilho Myeong; Byung-Gook Park; Young Suh Song
Source: check_circle
Crossref

Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study

Microelectronics Journal
2021-08 | Journal article
DOI: 10.1016/j.mejo.2021.105141
Part of ISSN: 0026-2692
Source: Self-asserted source
AJAYAN J

Highly scaled graded channel GaN HEMT with peak drain current of 2.48 A/mm

AEU - International Journal of Electronics and Communications
2021-07 | Journal article
DOI: 10.1016/j.aeue.2021.153774
Part of ISSN: 1434-8411
Source: Self-asserted source
AJAYAN J

A critical review of design and fabrication challenges in InP HEMTs for future terahertz frequency applications

Materials Science in Semiconductor Processing
2021-06 | Journal article
DOI: 10.1016/j.mssp.2021.105753
Part of ISSN: 1369-8001
Source: Self-asserted source
AJAYAN J

Lowering the Schottky Barrier Height by Titanium Contact for High-Drain Current in Mono-layer MoS2 Transistor

Journal of Electronic Materials
2021-06 | Journal article
DOI: 10.1007/s11664-021-08811-0
Part of ISSN: 0361-5235
Part of ISSN: 1543-186X
Source: Self-asserted source
AJAYAN J

Intensive Study of Field-Plated AlGaN/GaN HEMT on Silicon Substrate for High Power RF Applications

Silicon
2021-06-25 | Journal article
DOI: 10.1007/s12633-021-01199-w
Part of ISSN: 1876-990X
Part of ISSN: 1876-9918
Source: Self-asserted source
AJAYAN J

An Intensive Study on Assorted Substrates Suitable for High JFOM AlGaN/GaN HEMT

Silicon
2021-05 | Journal article
DOI: 10.1007/s12633-020-00549-4
Part of ISSN: 1876-990X
Part of ISSN: 1876-9918
Source: Self-asserted source
AJAYAN J

A Comprehensive Investigation of Vertically Stacked Silicon Nanosheet Field Effect Transistors: an Analog/RF Perspective

Silicon
2021-05-04 | Journal article
DOI: 10.1007/s12633-021-01128-x
Part of ISSN: 1876-990X
Part of ISSN: 1876-9918
Source: Self-asserted source
AJAYAN J

Investigation of RF and DC Performance of E-Mode In0.80Ga0.20As/InAs/In0.80Ga0.20as Channel based DG-HEMTs for Future Submillimetre Wave and THz Applications

IETE Journal of Research
2021-05-04 | Journal article
DOI: 10.1080/03772063.2018.1553641
Contributors: J. Ajayan; T. Ravichandran; P. Mohankumar; P. Prajoon; J. Charles Pravin; D. Nirmal
Source: check_circle
Crossref

Automata Theory-based Energy Efficient Area Algorithm for an Optimal Solution in Wireless Sensor Networks

Wireless Personal Communications
2021-04-24 | Journal article
DOI: 10.1007/s11277-021-08507-y
Part of ISSN: 0929-6212
Part of ISSN: 1572-834X
Source: Self-asserted source
AJAYAN J

Investigation of Influence of SiN and SiO2 Passivation in Gate Field Plate Double Heterojunction Al0.3Ga0.7N/GaN/Al0.04Ga0.96N High Electron Mobility Transistors

Silicon
2021-01-21 | Journal article
DOI: 10.1007/s12633-020-00899-z
Part of ISSN: 1876-990X
Part of ISSN: 1876-9918
Source: Self-asserted source
AJAYAN J

Investigation and influence of layer composition of tandem perovskite solar cells for applications in future renewable and sustainable energy

Optik
2020 | Journal article
DOI: 10.1016/j.ijleo.2020.164723
EID:

2-s2.0-85083512767

Part of ISSN: 00304026
Contributors: R, Y.; A.P, S.; P, M.; J, A.; R, S.
Source: Self-asserted source
AJAYAN J via Scopus - Elsevier

Numerical investigation of traps and optical response in III-V nitride quantum LED

Optical and Quantum Electronics
2020-12 | Journal article
DOI: 10.1007/s11082-020-02633-w
Part of ISSN: 0306-8919
Part of ISSN: 1572-817X
Source: Self-asserted source
AJAYAN J

Variable thermal resistance model of GaN-on-SiC with substrate scalability

Journal of Computational Electronics
2020-12 | Journal article
DOI: 10.1007/s10825-020-01561-y
Part of ISSN: 1569-8025
Part of ISSN: 1572-8137
Source: Self-asserted source
AJAYAN J

Breakdown voltage enhancement of gate field plate Al0.295Ga0.705N/GaN HEMTs

International Journal of Electronics
2020-12-10 | Journal article
DOI: 10.1080/00207217.2020.1849819
Part of ISSN: 0020-7217
Part of ISSN: 1362-3060
Source: Self-asserted source
AJAYAN J
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Enhancement of Johnson figure of merit in III‐V HEMT combined with discrete field plate and AlGaN blocking layer

International Journal of RF and Microwave Computer-Aided Engineering
2020-02-13 | Journal article
DOI: 10.1002/mmce.22040
Contributors: A. S. Augustine Fletcher; D. Nirmal; L. Arivazhagan; J. Ajayan; Arathy Varghese
Source: check_circle
Crossref

Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application

Superlattices and Microstructures
2018 | Journal article
DOI: 10.1016/j.spmi.2017.12.027
EID:

2-s2.0-85039424891
Contributors: Nirmal, D.; Arivazhagan, L.; Fletcher, A.S.A.; Ajayan, J.; Prajoon, P.
Source: Self-asserted source
AJAYAN J via Scopus - Elsevier

InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review

AEU - International Journal of Electronics and Communications
2018 | Journal article
DOI: 10.1016/j.aeue.2018.07.015
EID:

2-s2.0-85050081193
Contributors: Ajayan, J.; Nirmal, D.; Ravichandran, T.; Mohankumar, P.; Prajoon, P.; Arivazhagan, L.; Sarkar, C.K.
Source: Self-asserted source
AJAYAN J via Scopus - Elsevier

Investigation of breakdown performance in L<inf>g</inf>= 20 nm novel asymmetric InP HEMTs for future high-speed high-power applications

Journal of Computational Electronics
2018 | Journal article
DOI: 10.1007/s10825-017-1086-4
EID:

2-s2.0-85030662375
Contributors: Ajayan, J.; Ravichandran, T.; Prajoon, P.; Pravin, J.C.; Nirmal, D.
Source: Self-asserted source
AJAYAN J via Scopus - Elsevier

Investigation of DC-RF and breakdown behaviour in L<inf>g</inf> = 20 nm novel asymmetric GaAs MHEMTs for future submillimetre wave applications

AEU - International Journal of Electronics and Communications
2018 | Journal article
DOI: 10.1016/j.aeue.2017.12.022
EID:

2-s2.0-85041680425
Contributors: Ajayan, J.; Ravichandran, T.; Mohankumar, P.; Prajoon, P.; Charles Pravin, J.; Nirmal, D.
Source: Self-asserted source
AJAYAN J via Scopus - Elsevier

Investigation of efficiency enhancement in InGaN MQW LED with compositionally step graded GaN/InAlN/GaN multi-layer barrier

Superlattices and Microstructures
2018 | Journal article
DOI: 10.1016/j.spmi.2018.02.008
EID:

2-s2.0-85042130562
Contributors: Prajoon, P.; Anuja Menokey, M.; Charles Pravin, J.; Ajayan, J.; Rajesh, S.; Nirmal, D.
Source: Self-asserted source
AJAYAN J via Scopus - Elsevier

20-nm enhancement-mode metamorphic GaAs HEMT with highly doped InGaAs source/drain regions for high-frequency applications

International Journal of Electronics
2017 | Journal article
DOI: 10.1080/00207217.2016.1218066
EID:

2-s2.0-84982261618
Contributors: Ajayan, J.; Nirmal, D.
Source: Self-asserted source
AJAYAN J via Scopus - Elsevier

20 nm high performance novel MOSHEMT on InP substrate for future high speed low power applications

Superlattices and Microstructures
2017 | Journal article
DOI: 10.1016/j.spmi.2017.05.015
EID:

2-s2.0-85020116055
Contributors: Ajayan, J.; Subash, T.D.; Kurian, D.
Source: Self-asserted source
AJAYAN J via Scopus - Elsevier

22 nm In<inf>0:75</inf>Ga<inf>0:25</inf>As channel-based HEMTs on InP/GaAs substrates for future THz applications

Journal of Semiconductors
2017 | Journal article
DOI: 10.1088/1674-4926/38/4/044001
EID:

2-s2.0-85018366282
Contributors: Ajayan, J.; Nirmal, D.
Source: Self-asserted source
AJAYAN J via Scopus - Elsevier

Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications

AEU - International Journal of Electronics and Communications
2017 | Journal article
DOI: 10.1016/j.aeue.2017.06.004
EID:

2-s2.0-85028612907
Contributors: Ajayan, J.; Nirmal, D.; Prajoon, P.; Charles Pravin, J.
Source: Self-asserted source
AJAYAN J via Scopus - Elsevier

DC and microwave characteristics of 20 nm T-gate InAlN/GaN high electron mobility transistor for high power RF applications

Superlattices and Microstructures
2017 | Journal article
DOI: 10.1016/j.spmi.2017.05.060
EID:

2-s2.0-85020117602
Contributors: Murugapandiyan, P.; Ravimaran, S.; William, J.; Ajayan, J.; Nirmal, D.
Source: Self-asserted source
AJAYAN J via Scopus - Elsevier

Investigation of 6T SRAM memory circuit using high-k dielectrics based nano scale junctionless transistor

Superlattices and Microstructures
2017 | Journal article
DOI: 10.1016/j.spmi.2017.03.012
EID:

2-s2.0-85014890606
Contributors: Charles Pravin, J.; Nirmal, D.; Prajoon, P.; Mohan Kumar, N.; Ajayan, J.
Source: Self-asserted source
AJAYAN J via Scopus - Elsevier

20-nm T-gate composite channel enhancement-mode metamorphic HEMT on GaAs substrates for future THz applications

Journal of Computational Electronics
2016 | Journal article
DOI: 10.1007/s10825-016-0884-4
EID:

2-s2.0-84982261595
Contributors: Ajayan, J.; Nirmal, D.
Source: Self-asserted source
AJAYAN J via Scopus - Elsevier

20 nm high performance enhancement mode InP HEMT with heavily doped S/D regions for future THz applications

Superlattices and Microstructures
2016 | Journal article
DOI: 10.1016/j.spmi.2016.10.011
EID:

2-s2.0-84992187604
Contributors: Ajayan, J.; Nirmal, D.
Source: Self-asserted source
AJAYAN J via Scopus - Elsevier

A 5GHz 1.2V divide-by-128/129 and 256/257 dual modulus prescalers using 90nm CMOS technology

Proceeding of IEEE - 2nd International Conference on Advances in Electrical, Electronics, Information, Communication and Bio-Informatics, IEEE - AEEICB 2016
2016 | Conference paper
DOI: 10.1109/AEEICB.2016.7538409
EID:

2-s2.0-84987936721
Contributors: Hemapradhap, N.; Ajayan, J.
Source: Self-asserted source
AJAYAN J via Scopus - Elsevier

High speed low-power true single-phase clock divide-by-16/17 dual-modulus prescaler using 130nm CMOS process with a Vdd of 1.2V

Proceedings of IEEE International Conference on Circuit, Power and Computing Technologies, ICCPCT 2016
2016 | Conference paper
DOI: 10.1109/ICCPCT.2016.7530107
EID:

2-s2.0-84992116121
Contributors: Hemapradhap, N.; Ajayan, J.
Source: Self-asserted source
AJAYAN J via Scopus - Elsevier
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