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Hong Kong SAR China

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Education and qualifications (1)

Hong Kong University of Science and Technology: Hong Kong, HK

Education
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Hong Kong University of Science and Technology

Works (13)

Vertical GaN Schottky barrier diodes with micrometer pillar Schottky contacts

Journal of Physics D: Applied Physics
2025-03-10 | Journal article
Contributors: Renqiang Zhu; Bo Li; Shuai Li; Zhengweng Ma; Huakai Yang; Shijie He; Shuangwu Huang; Xinbo Xiong; Hsien-Chin Chiu; Xiaohua Li et al.
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Crossref

Dynamic Reliability Assessment of Vertical GaN Trench MOSFETs With Thick Bottom Dielectric

IEEE Transactions on Device and Materials Reliability
2024 | Journal article
Contributors: Yu Zhang; Renqiang Zhu; Haolan Qu; Yitian Gu; Huaxing Jiang; Kei May Lau; Xinbo Zou
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Crossref

Fully Vertical GaN-on-SiC p-i-n Diodes With BFOM of 2.89 GW/cm2

IEEE Journal of the Electron Devices Society
2024 | Journal article
Contributors: Jialun Li; Renqiang Zhu; Ka Ming Wong; Kei May Lau
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Crossref

Fully-Vertical GaN-on-SiC Trench MOSFETs

IEEE Electron Device Letters
2024 | Journal article
Contributors: Jialun Li; Renqiang Zhu; Ka Ming Wong; Kei May Lau
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Crossref

Vertical GaN-on-GaN Trench Junction Barrier Schottky Diodes With a Slanted Sidewall

IEEE Journal of the Electron Devices Society
2024 | Journal article
Contributors: Xinke Liu; Bo Li; Junye Wu; Jian Li; Wen Yue; Renqiang Zhu; Qi Wang; Xiaohua Li; Jianwei Ben; Wei He et al.
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Crossref

Ultra-low turn-on voltage (0.37 V) vertical GaN-on-GaN Schottky barrier diode via oxygen plasma treatment

Applied Physics Letters
2023-11-20 | Journal article
Contributors: Junye Wu; Zeliang Liao; Haofan Wang; Ping Zou; Renqiang Zhu; Weixiong Cai; Wenrong Zhuang; Yudi Tu; Shaojun Chen; Xinbo Xiong et al.
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Crossref

GaN quasi-vertical trench MOSFETs grown on Si substrate with ON-current exceeding 1 A

Applied Physics Express
2022-12-01 | Journal article
Contributors: Renqiang Zhu; Huaxing Jiang; Chak Wah Tang; Kei May Lau
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Crossref

Vertical GaN trench MOSFETs with step-graded channel doping

Applied Physics Letters
2022-06-13 | Journal article
Contributors: Renqiang Zhu; Huaxing Jiang; Chak Wah Tang; Kei May Lau
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Crossref

Enhancing ON- and OFF-State Performance of Quasi-Vertical GaN Trench MOSFETs on Sapphire With Reduced Interface Charges and a Thick Bottom Dielectric

IEEE Electron Device Letters
2022-03 | Journal article
Contributors: Renqiang Zhu; Huaxing Jiang; Chak Wah Tang; Kei May Lau
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Crossref

Effects of p-GaN Body Doping Concentration on the ON-State Performance of Vertical GaN Trench MOSFETs

IEEE Electron Device Letters
2021-07 | Journal article
Contributors: Renqiang Zhu; Huaxing Jiang; Chak Wah Tang; Kei May Lau
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Crossref

Thin-barrier heterostructures enabled normally-OFF GaN high electron mobility transistors

Semiconductor Science and Technology
2021-03-01 | Journal article
Part of ISSN: 0268-1242
Part of ISSN: 1361-6641
Source: Self-asserted source
Renqiang Zhu

1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current

IEEE Transactions on Electron Devices
2021-02 | Journal article
Contributors: Huaxing Jiang; Qifeng Lyu; Renqiang Zhu; Peng Xiang; Kai Cheng; Kei May Lau
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Crossref

High-Voltage p-GaN HEMTs With OFF-State Blocking Capability After Gate Breakdown

IEEE Electron Device Letters
2019-04 | Journal article
Contributors: Huaxing Jiang; Renqiang Zhu; Qifeng Lyu; Kei May Lau
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Crossref