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Scopus Author ID: 9279428600
ResearcherID: B-6013-2015

Keywords

Kinetic Monte Carlo, TCAD, Damage evolution

Countries

United States

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Employment (1)

Synopsys Inc: Mountain View, CA, US

2016-01 to present
Employment
Source: Self-asserted source
Ignacio Martin-Bragado

Works (50 of 64)

Items per page:
Page 1 of 2

He bubble growth in nickel simulated by object kinetic Monte Carlo

Journal of Nuclear Materials
2023-04 | Journal article
DOI: 10.1016/j.jnucmat.2023.154231
Contributors: Keyvan Ferasat; Ignacio Martin-Bragado; Zhongwen Yao; Laurent Karim Béland
Source: check_circle
Crossref

Direct observation of hydrogen permeation through grain boundaries in tungsten

Emergent Materials
2022-08 | Journal article
DOI: 10.1007/s42247-021-00344-w
Contributors: Pablo Díaz-Rodríguez; Miguel Panizo-Laiz; César González; Roberto Iglesias; Ignacio Martín-Bragado; Raquel González-Arrabal; Jose Manuel Perlado; Ovidio Peña-Rodríguez; Antonio Rivera
Source: check_circle
Crossref

Kinetic Monte Carlo simulation for semiconductor processing: A review

Progress in Materials Science
2018-03 | Journal article
DOI: 10.1016/j.pmatsci.2017.09.003
Contributors: Ignacio Martin-Bragado; Ricardo Borges; Juan Pablo Balbuena; Martin Jaraiz
Source: check_circle
Crossref

Lattice kinetic Monte Carlo simulation of epitaxial growth of silicon thin films in H 2 /SiH 4 chemical vapor deposition systems

Thin Solid Films
2017-07 | Journal article
DOI: 10.1016/j.tsf.2017.05.013
Contributors: Juan Pablo Balbuena; Ignacio Martin-Bragado
Source: check_circle
Crossref

An atomistically informed kinetic Monte Carlo model of grain boundary motion coupled to shear deformation

2015 | Journal article
DOI:

10.1016/j.ijplas.2014.11.005

EID:

2-s2.0-84920749548
Contributors: Prieto-Depedro, M.; Martin-Bragado, I.; Segurado, J.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

Multiscale modeling of defect formation during solid-phase epitaxy regrowth of silicon

2015 | Journal article
DOI:

10.1016/j.actamat.2014.07.067

EID:

2-s2.0-84908308493
Contributors: Prieto-Depedro, M.; Romero, I.; Martin-Bragado, I.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

Non-empirical phase equilibria in the Cr-Mo system: A combination of first-principles calculations, cluster expansion and Monte Carlo simulations

2015 | Journal article
DOI:

10.1016/j.solidstatesciences.2015.01.012

EID:

2-s2.0-84921961916
Contributors: Chen, W.; Xu, G.; Martin-Bragado, I.; Cui, Y.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

A multiscale approach to defect evolution in tungsten under helium irradiation

2014 | Journal article
DOI:

10.1016/j.nimb.2014.12.034

EID:

2-s2.0-84921325965
Contributors: Valles, G.; L. Cazalilla, A.; Gonzalez, C.; Martin-Bragado, I.; Prada, A.; Iglesias, R.; Perlado, J.M.; Rivera, A.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

A novel method for computing effective diffusivity: Application to helium implanted α-Fe thin films

2014 | Journal article
DOI:

10.1016/j.jnucmat.2014.01.039

EID:

2-s2.0-84894642250
Contributors: Dunn, A.; Agudo-Merida, L.; Martin-Bragado, I.; Mcphie, M.; Cherkaoui, M.; Capolungo, L.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

Atomistic investigation of the impact of stress during solid phase epitaxial regrowth

2014 | Journal article
DOI:

10.1002/pssc.201300166

EID:

2-s2.0-84892874146
Contributors: Sklenard, B.; Barbe, J.-C.; Batude, P.; Rivallin, P.; Tavernier, C.; Cristoloveanu, S.; Martin-Bragado, I.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

Atomistic modelling and simulation of arsenic diffusion including mobile arsenic clusters

2014 | Journal article
DOI:

10.1002/pssa.201300158

EID:

2-s2.0-84892914022
Contributors: Martin-Bragado, I.; Zographos, N.; Castrillo, P.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

Lattice kinetic Monte Carlo modeling of germanium solid phase epitaxial growth

2014 | Journal article
DOI:

10.1002/pssc.201300159

EID:

2-s2.0-84892875568
Contributors: Gomez-Selles, J.L.; Darby, B.L.; Jones, K.S.; Martin-Bragado, I.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

Low temperature junction formation by solid phase epitaxy on thin film devices: Atomistic modeling and experimental achievements

2014 | Conference paper
DOI:

10.1109/IWJT.2014.6842024

EID:

2-s2.0-84904699477
Contributors: Sklenard, B.; Batude, P.; Pasini, L.; Fenouillet-Beranger, C.; Previtali, B.; Casse, M.; Brunet, L.; Rivallin, P.; Barbe, J.-C.; Tavernier, C. et al.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

Mechanical behavior of nanoscale multilayers

2014 | Journal article
DOI:

10.1016/j.tsf.2014.11.013 Preface

EID:

2-s2.0-84919638316
Contributors: Molina-Aldareguia, J.M.; Martín-Bragado, I.; Llorca, J.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

Modeling of boron diffusion in silicon-germanium alloys using Kinetic Monte Carlo

2014 | Journal article
DOI:

10.1016/j.sse.2013.12.007

EID:

2-s2.0-84893002649
Contributors: Dopico, I.; Castrillo, P.; Martin-Bragado, I.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

Modeling of long-term defect evolution in heavy-ion irradiated 3C-SiC: Mechanism for thermal annealing and influences of spatial correlation

2014 | Journal article
DOI:

10.1063/1.4902145

EID:

2-s2.0-84912557374
Contributors: Guo, D.; Martin-Bragado, I.; He, C.; Zang, H.; Zhang, P.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

Process modeling of stress and chemical effects in SiGe alloys using kinetic Monte Carlo

2014 | Journal article
DOI:

10.1007/s10825-013-0489-0

EID:

2-s2.0-84894644858
Contributors: Zographos, N.; Martin-Bragado, I.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

The influence of high grain boundary density on helium retention in tungsten

2014 | Journal article
DOI:

10.1016/j.jnucmat.2014.10.038

EID:

2-s2.0-84911038027
Contributors: Valles, G.; González, C.; Martin-Bragado, I.; Iglesias, R.; Perlado, J.M.; Rivera, A.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

An atomistic investigation of the impact of in-plane uniaxial stress during solid phase epitaxial regrowth

2013 | Journal article
DOI:

10.1063/1.4802203

EID:

2-s2.0-84877152130
Contributors: Sklenard, B.; Barbe, J.-C.; Batude, P.; Rivallin, P.; Tavernier, C.; Cristoloveanu, S.; Martin-Bragado, I.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

Comprehensive modeling of solid phase epitaxial growth using Lattice Kinetic Monte Carlo

2013 | Journal article
DOI:

10.1016/j.nimb.2012.10.026

EID:

2-s2.0-84884815599
Contributors: Martin-Bragado, I.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

Effect of ion flux on helium retention in helium-irradiated tungsten

2013 | Journal article
DOI:

10.1016/j.nimb.2012.10.038

EID:

2-s2.0-84884818114
Contributors: Rivera, A.; Valles, G.; Caturla, M.J.; Martin-Bragado, I.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

Influence of device architecture on junction leakage in low-temperature process FDSOI MOSFETs

2013 | Journal article
DOI:

10.1016/j.sse.2013.04.018

EID:

2-s2.0-84884979192
Contributors: Sklenard, B.; Batude, P.; Rafhay, Q.; Martin-Bragado, I.; Xu, C.; Previtali, B.; Colombeau, B.; Khaja, F.-A.; Cristoloveanu, S.; Rivallin, P. et al.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

Lattice kinetic modeling of the anisotropic growth of two-dimensional islands on barite (001) surface

2013 | Journal article
DOI:

10.1021/cg4002237

EID:

2-s2.0-84879848936
Contributors: De Antonio Gómez, S.; Pina, C.M.; Martin-Bragado, I.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

MMonCa: An Object Kinetic Monte Carlo simulator for damage irradiation evolution and defect diffusion

2013 | Journal article
DOI:

10.1016/j.cpc.2013.07.011

EID:

2-s2.0-84888303705
Contributors: Martin-Bragado, I.; Rivera, A.; Valles, G.; Gomez-Selles, J.L.; Caturla, M.J.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

Substrate orientation dependence on the solid phase epitaxial growth rate of Ge

2013 | Journal article
DOI:

10.1063/1.4776718

EID:

2-s2.0-84872867083
Contributors: Darby, B.L.; Yates, B.R.; Martin-Bragado, I.; Gomez-Selles, J.L.; Elliman, R.G.; Jones, K.S.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

FDSOI devices: A solution to achieve low junction leakage with low temperature processes (≤ 650°C)

2012 | Conference paper
DOI:

10.1109/ULIS.2012.6193384

EID:

2-s2.0-84861208610
Contributors: Sklénard, B.; Xu, C.; Batude, P.; Previtali, B.; Tabone, C.; Rafhay, Q.; Colombeau, B.; Khaja, F.-A.; Martín-Bragado, I.; Berthoz, J. et al.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

Importance of twin defect formation created by solid-phase epitaxial growth: An atomistic study

2012 | Journal article
DOI:

10.1016/j.scriptamat.2011.10.036

EID:

2-s2.0-82255181389
Contributors: Martin-Bragado, I.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

Modeling and optimization of solar cells

2012 | Conference paper
DOI:

10.1063/1.4766524

EID:

2-s2.0-84874197480
Contributors: Moroz, V.; Huang, J.; Letay, G.; Martin-Bragado, I.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

Process modeling of chemical and stress effects in SiGe

2012 | Conference paper
DOI:

10.1063/1.4766526

EID:

2-s2.0-84874206704
Contributors: Zographos, N.; Zechner, C.; Castrillo, P.; Martin-Bragado, I.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

Understanding Si(111) solid phase epitaxial regrowth using Monte Carlo modeling: Bi-modal growth, defect formation, and interface topology

2012 | Journal article
DOI:

10.1063/1.4739733

EID:

2-s2.0-84865511216
Contributors: Martin-Bragado, I.; Sklenard, B.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

Indirect boron diffusion in amorphous silicon modeled by kinetic Monte Carlo

2011 | Journal article
DOI:

10.1016/j.sse.2010.08.008

EID:

2-s2.0-78149280067
Contributors: Martin-Bragado, I.; Zographos, N.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

Modeling of {311} facets using a lattice kinetic Monte Carlo three-dimensional model for selective epitaxial growth of silicon

2011 | Journal article
DOI:

10.1063/1.3580771

EID:

2-s2.0-79954601391
Contributors: Martin-Bragado, I.; Moroz, V.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

{111} local configurations: The main source of silicon defects during solid phase epitaxial regrowth modeled by lattice kinetic Monte Carlo

2011 | Journal article
DOI:

10.1063/1.3596466

EID:

2-s2.0-79959343652
Contributors: Martin-Bragado, I.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

Exploring doping options and variability of trigate transistors using atomistic process and device simulations

2010 | Journal article
DOI:

10.1116/1.3248263

EID:

2-s2.0-77949344953
Contributors: Martin-Bragado, I.; Moroz, V.; Choi, M.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

Facet formation during solid phase epitaxy regrowth: A lattice kinetic Monte Carlo model

2009 | Journal article
DOI:

10.1063/1.3236535

EID:

2-s2.0-70349690181
Contributors: Martin-Bragado, I.; Moroz, V.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

A comprehensive atomistic kinetic monte carlo model for amorphization/recrystallization and its effects on dopants

2008 | Conference paper
EID:

2-s2.0-62949244045
Contributors: Zographos, N.; Martin-Bragado, I.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

Anisotropic dopant diffusion in Si under stress using both continuum and atomistic methods

2008 | Journal article
DOI:

10.1007/s10825-008-0248-9

EID:

2-s2.0-50949128089
Contributors: Martin-Bragado, I.; Avci, I.; El Sayed, K.; Koltyzhenkov, V.; Lyumkis, E.; Johnson, M.D.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

Dissolution of extended defects in strained silicon

2008 | Journal article
DOI:

10.1116/1.2778698

EID:

2-s2.0-38849103131
Contributors: Moroz, V.; Martin-Bragado, I.; Felch, S.; Nouri, F.; Olsen, C.; Jones, K.S.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

From point defects to dislocation loops: A comprehensive modelling framework for self-interstitial defects in silicon

2008 | Journal article
DOI:

10.1016/j.sse.2008.04.027

EID:

2-s2.0-50349096349
Contributors: Martin-Bragado, I.; Avci, I.; Zographos, N.; Jaraiz, M.; Castrillo, P.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

From point defects to dislocation loops: A comprehensive TCAD model for self-interstitial defects in silicon

2008 | Conference paper
DOI:

10.1109/ESSDERC.2007.4430946

EID:

2-s2.0-39549091487
Contributors: Martin-Bragado, I.; Avci, I.; Zographos, N.; Castrillo, P.; Jaraiz, M.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

Long and double hop kinetic Monte Carlo: Techniques to speed up atomistic modeling without losing accuracy

2008 | Journal article
DOI:

10.1016/j.mseb.2008.08.015

EID:

2-s2.0-56949092095
Contributors: Martin-Bragado, I.; Zographos, N.; Jaraiz, M.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

Modeling evolution of temperature, stress, defects, and dopant diffusion in silicon during spike and millisecond annealing

2008 | Conference paper
EID:

2-s2.0-62949148794
Contributors: Moroz, V.; Martin-Bragado, I.; Zographos, N.; Matveev, D.; Zechner, C.; Choi, M.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

Atomistic modeling of carbon co-implants and rapid thermal anneals in silicon

2007 | Conference paper
DOI:

10.1109/RTP.2007.4383829

EID:

2-s2.0-47949094341
Contributors: Zographos, N.; Martin-Bragado, I.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowth

2006 | Conference paper
EID:

2-s2.0-33751036585
Contributors: Mok, K.R.C.; Colombeau, B.; Jaraiz, M.; Castrillo, P.; Rubio, J.E.; Pinacho, R.; Srinivasan, M.P.; Benistant, F.; Martin-Bragado, I.; Hamilton, J.J.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

Modeling charged defects, dopant diffusion and activation mechanisms for TCAD simulations using kinetic Monte Carlo

2006 | Journal article
DOI:

10.1016/j.nimb.2006.10.035

EID:

2-s2.0-37849187710
Contributors: Martin-Bragado, I.; Tian, S.; Johnson, M.; Castrillo, P.; Pinacho, R.; Rubio, J.; Jaraiz, M.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

Physical modeling of defects, dopant activation and diffusion in aggressively scaled bulk and SOI devices: Atomistic and continuum approaches

2006 | Conference paper
EID:

2-s2.0-33751059309
Contributors: Moroz, V.; Martin-Bragado, I.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

Bimodal distribution of damage morphology generated by ion implantation

2005 | Journal article
DOI:

10.1016/j.mseb.2005.08.099

EID:

2-s2.0-27844450376
Contributors: Mok, K.R.C.; Jaraiz, M.; Martin-Bragado, I.; Rubio, J.E.; Castrillo, P.; Pinacho, R.; Srinivasan, M.P.; Benistant, F.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

Comprehensive modeling of ion-implant amorphization in silicon

2005 | Journal article
DOI:

10.1016/j.mseb.2005.08.026

EID:

2-s2.0-27844594194
Contributors: Mok, K.R.C.; Jaraiz, M.; Martin-Bragado, I.; Rubio, J.E.; Castrillo, P.; Pinacho, R.; Srinivasan, M.P.; Benistant, F.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

Dose loss and segregation of boron and arsenic at the Si/SiO2 interface by atomistic kinetic Monte Carlo simulations

2005 | Journal article
DOI:

10.1016/j.mseb.2005.08.030

EID:

2-s2.0-27844595738
Contributors: Rubio, J.E.; Jaraiz, M.; Martin-Bragado, I.; Castrillo, P.; Pinacho, R.; Barbolla, J.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier

Fermi-level effects in semiconductor processing: A modeling scheme for atomistic kinetic Monte Carlo simulators

2005 | Journal article
DOI:

10.1063/1.2041847

EID:

2-s2.0-25144508524
Contributors: Martin-Bragado, I.; Castrillo, P.; Jaraiz, M.; Pinacho, R.; Rubio, J.E.; Barbolla, J.; Moroz, V.
Source: Self-asserted source
Ignacio Martin-Bragado via Scopus - Elsevier
Items per page:
Page 1 of 2

Peer review (25 reviews for 13 publications/grants)

Review activity for Acta materialia. (1)
Review activity for Applied physics. (1)
Review activity for Applied surface science. (3)
Review activity for Communications physics. (1)
Review activity for Computational materials science. (2)
Review activity for IEEE electron device letters : (2)
Review activity for International journal of modern physics B. (1)
Review activity for Journal of applied physics. (5)
Review activity for JPhys energy. (1)
Review activity for Materials characterization. (1)
Review activity for Physical review applied. (1)
Review activity for Physical review. (2)
Review activity for Physical review. (4)
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