Personal information

Other IDs

Scopus Author ID: 57192984602

Activities

Collapse all

Employment (1)

Imec: Leuven, BE

Employment
Source: Self-asserted source
Anurag Vohra

Education and qualifications (1)

KU Leuven: Leuven, BE

PhD (Department of Physics)
Education
Source: Self-asserted source
Anurag Vohra

Works (28)

Route Toward Commercially Manufacturable Vertical GaN Devices

IEEE Transactions on Electron Devices
2024 | Journal article
DOI: 10.1109/TED.2023.3340661
Contributors: Karen Geens; M. Borga; M. A. Khan; W. Gonçalez Filho; A. Vohra; S. Banerjee; K. J. Lee; U. Chatterjee; D. Cingu; B. Bakeroot et al.
Source: check_circle
Crossref

Metal‐Organic Chemical Vapor Deposition Regrowth of Highly Doped n+ (In)GaN Source/Drain Layers for Radio Frequency Transistors

physica status solidi (a)
2024-11 | Journal article
DOI: 10.1002/pssa.202400069
Contributors: Sourish Banerjee; Uthayasankaran Peralagu; Alireza Alian; Ming Zhao; Herwig Hahn; Albert Minj; Benjamin Vanhove; Anurag Vohra; Bertrand Parvais; Robert Langer et al.
Source: check_circle
Crossref

Time-dependent conduction mechanisms in reversed stepped superlattice layers of GaN HEMTs on 200 mm engineered substrates

Applied Physics Letters
2024-08-26 | Journal article
DOI: 10.1063/5.0222572
Contributors: Zequan Chen; Michael J. Uren; Peng Huang; Indraneel Sanyal; Matthew D. Smith; Anurag Vohra; Sujit Kumar; Stefaan Decoutere; Benoit Bakeroot; Martin Kuball
Source: check_circle
Crossref

AlN/Si interface engineering to mitigate RF losses in MOCVD-grown GaN-on-Si substrates

Applied Physics Letters
2024-08-12 | Journal article
DOI: 10.1063/5.0212145
Contributors: Pieter Cardinael; Sachin Yadav; Herwig Hahn; Ming Zhao; Sourish Banerjee; Babak Kazemi Esfeh; Christof Mauder; Barry O'Sullivan; Uthayasankaran Peralagu; Anurag Vohra et al.
Source: check_circle
Crossref

Correlation of heat transport mechanism and structural properties of GaN high electron mobility transistors

Journal of Applied Physics
2024-07-28 | Journal article
DOI: 10.1063/5.0207513
Contributors: Lisa Mitterhuber; Barbara Kosednar-Legenstein; Anurag Vohra; Matteo Borga; Niels Posthuma; Elke Kraker
Source: check_circle
Crossref

1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates

IEEE Electron Device Letters
2024-04 | Journal article
DOI: 10.1109/LED.2024.3361164
Contributors: S. Kumar; K. Geens; A. Vohra; D. Wellekens; D. Cingu; E. Fabris; T. Cosnier; H. Hahn; B. Bakeroot; N. Posthuma et al.
Source: check_circle
Crossref

Mg activation anneal of the p-GaN body in trench gate MOSFETs and its effect on channel mobility and threshold voltage stability

Applied Physics Letters
2024-03-11 | Journal article
DOI: 10.1063/5.0191973
Contributors: Walter Gonçalez Filho; Matteo Borga; Karen Geens; Md Arif Khan; Deepthi Cingu; Urmimala Chatterjee; Anurag Vohra; Stefaan Decoutere; Benoit Bakeroot
Source: check_circle
Crossref

Role of the GaN-on-Si Epi-Stack on ΔR ON Caused by Back-Gating Stress

IEEE Transactions on Electron Devices
2023-10 | Journal article
DOI: 10.1109/TED.2023.3304272
Contributors: M. Millesimo; M. Borga; L. Valentini; B. Bakeroot; N. Posthuma; A. Vohra; S. Decoutere; C. Fiegna; A. N. Tallarico
Source: check_circle
Crossref

A fully integrated half-bridge driver circuit in All-GaN GAN-IC technology

Solid-State Electronics
2023-09 | Journal article
DOI: 10.1016/j.sse.2023.108707
Contributors: Urmimala Chatterjee; Herbert De Pauw; Olga Syshchyk; Thibault Cosnier; Anurag Vohra; Stefaan Decoutere
Source: check_circle
Crossref

Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application

Applied Physics Letters
2022-06-27 | Journal article
DOI: 10.1063/5.0097797
Contributors: Anurag Vohra; Karen Geens; Ming Zhao; Olga Syshchyk; Herwig Hahn; Dirk Fahle; Benoit Bakeroot; Dirk Wellekens; Benjamin Vanhove; Robert Langer et al.
Source: check_circle
Crossref

Point defect formation near the epitaxial Ge(001) growth surface and the impact on phosphorus doping activation

Journal of Applied Physics
2021-09-28 | Journal article
DOI: 10.1063/5.0064952
Contributors: Anurag Vohra; Geoffrey Pourtois; Roger Loo; Wilfried Vandervorst
Source: check_circle
Crossref

A demonstration of donor passivation through direct formation of V-Asi complexes in As-doped Ge1−xSnx

Journal of Applied Physics
2020-05-21 | Journal article
DOI: 10.1063/5.0003999
Contributors: Afrina Khanam; Anurag Vohra; Jonatan Slotte; Ilja Makkonen; Roger Loo; Geoffrey Pourtois; Wilfried Vandervorst
Source: check_circle
Crossref

Source/Drain Materials for Ge nMOS Devices: Phosphorus Activation in Epitaxial Si, Ge, Ge1−xSnx and SiyGe1−x−ySnx

ECS Journal of Solid State Science and Technology
2020-01-05 | Journal article
DOI: 10.1149/2162-8777/ab8d91
Contributors: Anurag Vohra; Ilja Makkonen; Geoffrey Pourtois; Jonatan Slotte; Clement Porret; Erik Rosseel; Afrina Khanam; Matteo Tirrito; Bastien Douhard; Roger Loo et al.
Source: check_circle
Crossref

Epitaxial Growth of (Si)GeSn Source/Drain Layers for Advanced Ge Gate All around Devices

2019 Compound Semiconductor Week, CSW 2019 - Proceedings
2019 | Conference paper
DOI: 10.1109/ICIPRM.2019.8818998
EID:

2-s2.0-85072976372
Contributors: Loo, R.; Vohra, A.; Porret, C.; Hikavyy, A.; Rosseel, E.; Schaekers, M.; Capogreco, E.; Shimura, Y.; Kohen, D.; Tolle, J. et al.
Source: Self-asserted source
Anurag Vohra via Scopus - Elsevier

Evolution of phosphorus-vacancy clusters in epitaxial germanium

Journal of Applied Physics
2019 | Journal article
DOI: 10.1063/1.5054996
EID:

2-s2.0-85059857216
Contributors: Vohra, A.; Khanam, A.; Slotte, J.; Makkonen, I.; Pourtois, G.; Loo, R.; Vandervorst, W.
Source: Self-asserted source
Anurag Vohra via Scopus - Elsevier

Low temperature epitaxial growth of Ge:B and Ge<inf>0.99</inf>Sn<inf>0.01</inf>:B source/drain for Ge pMOS devices: In-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment

Japanese Journal of Applied Physics
2019 | Journal article
DOI: 10.7567/1347-4065/ab027b
EID:

2-s2.0-85065492054
Contributors: Vohra, A.; Porret, C.; Kohen, D.; Folkersma, S.; Bogdanowicz, J.; Schaekers, M.; Tolle, J.; Hikavyy, A.; Capogreco, E.; Witters, L. et al.
Source: Self-asserted source
Anurag Vohra via Scopus - Elsevier

Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration

ECS Journal of Solid State Science and Technology
2019 | Journal article
DOI: 10.1149/2.0071908jss
Contributors: C. Porret; A. Hikavyy; J. F. Gomez Granados; S. Baudot; A. Vohra; B. Kunert; B. Douhard; J. Bogdanowicz; M. Schaekers; D. Kohen et al.
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Low Temperature Selective Growth of Heavily Boron‐Doped Germanium Source / Drain Layers for Advanced pMOS Devices

physica status solidi (a)
2019-10-26 | Journal article
DOI: 10.1002/pssa.201900628
Part of ISSN: 1862-6300
Part of ISSN: 1862-6319
Source: Self-asserted source
Anurag Vohra
grade
Preferred source (of 2)‎

Source/Drain Materials for Ge nMOS Devices

ECS Transactions
2019-10-22 | Journal article
DOI: 10.1149/09301.0029ecst
Contributors: Anurag Vohra; Clement Porret; Erik Rosseel; Andriy Yakovitch Hikavyy; Elena Capogreco; Naoto Horiguchi; Roger Loo; Wilfried Vandervorst
Source: check_circle
Crossref

High performance strained Germanium Gate All Around p-channel devices with excellent electrostatic control for sub-Jtlnm LG

2019 Symposium on VLSI Technology
2019-06 | Conference paper
DOI: 10.23919/vlsit.2019.8776558
ISBN: 9784863487192
Source: Self-asserted source
Anurag Vohra
grade
Preferred source (of 2)‎

Heavily phosphorus doped germanium: Strong interaction of phosphorus with vacancies and impact of tin alloying on doping activation

Journal of Applied Physics
2019-06-14 | Journal article
DOI: 10.1063/1.5107503
Contributors: Anurag Vohra; Afrina Khanam; Jonatan Slotte; Ilja Makkonen; Geoffrey Pourtois; Clement Porret; Roger Loo; Wilfried Vandervorst
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

A new method to fabricate ge nanowires: Selective lateral etching of gesn:P/ge multi-stacks

Solid State Phenomena
2018 | Book
DOI: 10.4028/www.scientific.net/SSP.282.113
EID:

2-s2.0-85055411940
Contributors: Porret, C.; Vohra, A.; Sebaai, F.; Douhard, B.; Hikavyy, A.; Loo, R.
Source: Self-asserted source
Anurag Vohra via Scopus - Elsevier

Enhanced B doping in CVD-grown GeSn:B using B δ-doping layers

Journal of Crystal Growth
2018 | Journal article
DOI: 10.1016/j.jcrysgro.2017.12.018
EID:

2-s2.0-85038215320
Contributors: Kohen, D.; Vohra, A.; Loo, R.; Vandervorst, W.; Bhargava, N.; Margetis, J.; Tolle, J.
Source: Self-asserted source
Anurag Vohra via Scopus - Elsevier

Epitaxial GeSn: Impact of process conditions on material quality

Semiconductor Science and Technology
2018 | Journal article
DOI: 10.1088/1361-6641/aae2f9
EID:

2-s2.0-85055338108
Contributors: Loo, R.; Shimura, Y.; Ike, S.; Vohra, A.; Stoica, T.; Stange, D.; Buca, D.; Kohen, D.; Margetis, J.; Tolle, J.
Source: Self-asserted source
Anurag Vohra via Scopus - Elsevier

Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration

ECS Transactions
2018 | Conference paper
DOI: 10.1149/08607.0163ecst
EID:

2-s2.0-85058436355
Contributors: Porret, C.; Hikavyy, A.; Gomez Granados, J.F.; Baudot, S.; Vohra, A.; Kunert, B.; Douhard, B.; Bogdanowicz, J.; Schaekers, M.; Kohen, D. et al.
Source: Self-asserted source
Anurag Vohra via Scopus - Elsevier

Fabrication, Characterization, and Analysis of Ge/GeSn Heterojunction p-Type Tunnel Transistors

IEEE Transactions on Electron Devices
2017 | Journal article
DOI: 10.1109/TED.2017.2742957
EID:

2-s2.0-85029146988
Contributors: Schulte-Braucks, C.; Pandey, R.; Sajjad, R.N.; Barth, M.; Ghosh, R.K.; Grisafe, B.; Sharma, P.; Von Den Driesch, N.; Vohra, A.; Rayner, G.B. et al.
Source: Self-asserted source
Anurag Vohra via Scopus - Elsevier

Fundamentals of Ge<inf>1−x</inf>Sn<inf>x</inf> and Si<inf>y</inf>Ge<inf>1−x-y</inf>Sn<inf>x</inf> RPCVD epitaxy

Materials Science in Semiconductor Processing
2017 | Journal article
DOI: 10.1016/j.mssp.2016.12.024
EID:

2-s2.0-85009813159
Contributors: Margetis, J.; Mosleh, A.; Ghetmiri, S.A.; Al-Kabi, S.; Dou, W.; Du, W.; Bhargava, N.; Yu, S.-Q.; Profijt, H.; Kohen, D. et al.
Source: Self-asserted source
Anurag Vohra via Scopus - Elsevier

Performance Benchmarking of p-type In0.65Ga0.35As/GaAs0.4Sb0.6 and Ge/Ge0.93Sn0.07 Hetero-junction Tunnel FETs

Technical Digest - International Electron Devices Meeting, IEDM
2017 | Conference paper
DOI: 10.1109/IEDM.2016.7838455
EID:

2-s2.0-85014466162
Contributors: Pandey, R.; Schulte-Braucks, C.; Sajjad, R.N.; Barth, M.; Ghosh, R.K.; Grisafe, B.; Sharma, P.; Von Den Driesch, N.; Vohra, A.; Rayner, B. et al.
Source: Self-asserted source
Anurag Vohra via Scopus - Elsevier

Peer review (6 reviews for 4 publications/grants)

Review activity for Applied physics letters. (3)
Review activity for Journal of applied physics. (1)
Review activity for Materials science in semiconductor processing. (1)
Review activity for Micro and nanostructures. (1)
How many people are using ORCID?