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Advanced Devices and Sustainable Energy Lab (ADSEL)

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Education and qualifications (3)

Virginia Polytechnic Institute and State University: Blacksburg, VA, US

2016-08-22 to 2023-12-13 | Doctor of Philosophy - Electrical Engineering (Bradley Department of Electrical and Computer Engineering)
Education
Source: Self-asserted source
Michael Clavel

Virginia Polytechnic Institute and State University: Blacksburg, VA, US

2013-08-26 to 2016-05-12 | Master of Science - Electrical Engineering (Bradley Department of Electrical and Computer Engineering)
Education
Source: Self-asserted source
Michael Clavel

Virginia Polytechnic Institute and State University: Blacksburg, VA, US

2009-08-24 to 2013-05-17 | Bachelor of Science - Electrical Engineering (Bradley Department of Electrical and Computer Engineering)
Education
Source: Self-asserted source
Michael Clavel

Funding (2)

US-Ireland R&D Partnership: Si-compatible, Strain Engineered Staggered Gap Ge(Sn)/InxGa1-xAs Nanoscale Tunnel Field Effect Transistors

Source: Self-asserted source
Michael Clavel via DimensionsWizard

EAGER: Silicon-compatible, Crystallographic Oriented Epitaxial Germanium for New Generation of Metal-oxide Semiconductor Field-effect Transistors

Source: Self-asserted source
Michael Clavel via DimensionsWizard

Works (39)

High-κ Gate Dielectric on Tunable Tensile Strained Germanium Heterogeneously Integrated on Silicon: Role of Strain, Process, and Interface States

ACS Applied Electronic Materials
2023-09-26 | Journal article
DOI: 10.1021/acsaelm.3c00568
Contributors: Mantu K. Hudait; Michael B. Clavel; Sengunthar Karthikeyan; Robert J. Bodnar
Source: check_circle
Crossref

High carrier lifetimes in epitaxial germanium–tin/Al(In)As heterostructures with variable tin compositions

Journal of Materials Chemistry C
2022 | Journal article
DOI: 10.1039/D2TC00830K
Contributors: Mantu K. Hudait; Steven W. Johnston; Michael B. Clavel; Shuvodip Bhattacharya; Sengunthar Karthikeyan; Rutwik Joshi
Source: check_circle
Crossref

Multivalley Electron Conduction at the Indirect-Direct Crossover Point in Highly Tensile-Strained Germanium

Physical Review Applied
2022-12-27 | Journal article
DOI: 10.1103/PhysRevApplied.18.064083
Contributors: M.B. Clavel; F. Murphy-Armando; Y. Xie; K.T. Henry; M. Kuhn; R.J. Bodnar; G.A. Khodaparast; D. Smirnov; J.J. Heremans; M.K. Hudait
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Crossref

Mapping the Interfacial Electronic Structure of Strain-Engineered Epitaxial Germanium Grown on InxAl1–xAs Stressors

ACS Omega
2022-02-22 | Journal article
DOI: 10.1021/acsomega.1c06203
Contributors: Michael B. Clavel; Jheng-Sin Liu; Robert J. Bodnar; Mantu K. Hudait
Source: check_circle
Crossref

Design, Theoretical, and Experimental Investigation of Tensile-Strained Germanium Quantum-Well Laser Structure

ACS Applied Electronic Materials
2021-10-26 | Journal article
DOI: 10.1021/acsaelm.1c00660
Contributors: Mantu K. Hudait; Felipe Murphy-Armando; Dzianis Saladukha; Michael B. Clavel; Patrick S. Goley; Deepam Maurya; Shuvodip Bhattacharya; Tomasz J. Ochalski
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Crossref

Structural, morphological and magnetotransport properties of composite semiconducting and semimetallic InAs/GaSb superlattice structure

Materials Advances
2020 | Journal article
DOI: 10.1039/D0MA00046A
Contributors: M. K. Hudait; M. Clavel; P. S. Goley; Y. Xie; J. J. Heremans; Y. Jiang; Z. Jiang; D. Smirnov; G. D. Sanders; C. J. Stanton
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Crossref

Device Characterization of a Sulfur-Implanted p$^{++}$/p GaSb Photovoltaic Camel Diode

IEEE Journal of Photovoltaics
2020-11 | Journal article
DOI: 10.1109/JPHOTOV.2020.3016615
Contributors: Daniel J. Herrera; Michael B. Clavel; Mantu K. Hudait; Luke F. Lester
Source: check_circle
Crossref

Tri-gate GaN junction HEMT

Applied Physics Letters
2020-10-05 | Journal article
DOI: 10.1063/5.0025351
Contributors: Yunwei Ma; Ming Xiao; Zhonghao Du; Xiaodong Yan; Kai Cheng; Michael Clavel; Mantu K. Hudait; Ivan Kravchenko; Han Wang; Yuhao Zhang
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Crossref

Electronic and optical properties of highly boron-doped epitaxial Ge/AlAs(001) heterostructures

Journal of Applied Physics
2020-02-21 | Journal article
DOI: 10.1063/1.5130567
Contributors: Michael B. Clavel; Jheng-Sin Liu; Michael A. Meeker; Giti A. Khodaparast; Yuantao Xie; Jean J. Heremans; Shuvodip Bhattacharya; Mantu K. Hudait
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Crossref

TBAL: Tunnel FET-Based Adiabatic Logic for Energy-Efficient, Ultra-Low Voltage IoT Applications

IEEE Journal of the Electron Devices Society
2019 | Journal article
DOI: 10.1109/JEDS.2019.2891204
Contributors: Jheng-Sin Liu; Michael B. Clavel; Mantu K. Hudait
Source: check_circle
Crossref

Engineering the Interfacial Electronic Structure of Epitaxial Ge/AlAs(001) Heterointerfaces via Substitutional Boron Incorporation: The Roles of Doping and Interface Stoichiometry

ACS Applied Electronic Materials
2019-12-24 | Journal article
DOI: 10.1021/acsaelm.9b00615
Contributors: Michael B. Clavel; Gabriel Greene-Diniz; Myrta Grüning; Karen T. Henry; Markus Kuhn; Robert J. Bodnar; Mantu K. Hudait
Source: check_circle
Crossref

Structural and optical properties of sulfur passivated epitaxial step-graded GaAs1-ySby materials

AIP Advances
2018-11 | Journal article
DOI: 10.1063/1.5028133
Contributors: Mantu K. Hudait; Michael B. Clavel; Sarat Saluru; Jheng-Sin Liu; Michael A. Meeker; Giti A. Khodaparast; Robert J. Bodnar
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Crossref

In Situ SiO2 Passivation of Epitaxial (100) and (110)InGaAs by Exploiting TaSiOx Atomic Layer Deposition Process

ACS Omega
2018-11-30 | Journal article
DOI: 10.1021/acsomega.8b02314
Contributors: Mantu K. Hudait; Michael B. Clavel; Jheng-Sin Liu; Shuvodip Bhattacharya
Source: check_circle
Crossref

Heterogeneous integration of InAs/GaSb tunnel diode structure on silicon using 200 nm GaAsSb dislocation filtering buffer

AIP Advances
2018-10 | Journal article
DOI: 10.1063/1.5042064
Contributors: J.-S. Liu; M. Clavel; R. Pandey; S. Datta; Y. Xie; J. J. Heremans; M. K. Hudait
Source: check_circle
Crossref

Magnetic Field Sensing by Exploiting Giant Nonstrain-Mediated Magnetodielectric Response in Epitaxial Composites

Nano Letters
2018-05-09 | Journal article
DOI: 10.1021/acs.nanolett.7b05248
Contributors: Min Gyu Kang; Han Byul Kang; Michael Clavel; Deepam Maurya; Sreenivasulu Gollapudi; Mantu Hudait; Mohan Sanghadasa; Shashank Priya
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Crossref

Transport Across Heterointerfaces of Amorphous Niobium Oxide and Crystallographically Oriented Epitaxial Germanium

ACS Applied Materials & Interfaces
2017-12-13 | Journal article
DOI: 10.1021/acsami.7b06601
Contributors: Mantu K. Hudait; Michael Clavel; Jheng-Sin Liu; Aheli Ghosh; Nikhil Jain; Robert J. Bodnar
Source: check_circle
Crossref

Investigating FinFET Sidewall Passivation Using Epitaxial (100)Ge and (110)Ge Metal–Oxide–Semiconductor Devices on AlAs/GaAs

IEEE Transactions on Electron Devices
2017-11 | Journal article
DOI: 10.1109/TED.2017.2755460
Contributors: Peter D. Nguyen; Michael B. Clavel; Jheng-Sin Liu; Mantu K. Hudait
Source: check_circle
Crossref

Band Offset Enhancement of a-Al2O3/Tensile-Ge for High Mobility Nanoscale pMOS Devices

IEEE Electron Device Letters
2017-09 | Journal article
DOI: 10.1109/LED.2017.2734040
Contributors: Michael B. Clavel; Mantu K. Hudait
Source: check_circle
Crossref

Growth, structural, and electrical properties of germanium-on-silicon heterostructure by molecular beam epitaxy

AIP Advances
2017-09 | Journal article
DOI: 10.1063/1.4993446
Contributors: Aheli Ghosh; Michael B. Clavel; Peter D. Nguyen; Michael A. Meeker; Giti A. Khodaparast; Robert J. Bodnar; Mantu K. Hudait
Source: check_circle
Crossref

An Energy-Efficient Tensile-Strained Ge/InGaAs TFET 7T SRAM Cell Architecture for Ultralow-Voltage Applications

IEEE Transactions on Electron Devices
2017-05 | Journal article
DOI: 10.1109/TED.2017.2675364
Contributors: Jheng-Sin Liu; Michael B. Clavel; Mantu K. Hudait
Source: check_circle
Crossref

Growth and characterization of metamorphic InAs/GaSb tunnel heterojunction on GaAs by molecular beam epitaxy

Journal of Applied Physics
2016-06-28 | Journal article
DOI: 10.1063/1.4954794
Contributors: Jheng-Sin Liu; Michael B. Clavel; Rahul Pandey; Suman Datta; Michael Meeker; Giti A. Khodaparast; Mantu K. Hudait
Source: check_circle
Crossref

Pushing the limits of silicon transistors

Physics and Simulation of Optoelectronic Devices XXIV
2016-03-04 | Conference paper
DOI: 10.1117/12.2209606
Contributors: Dzianis Saladukha; Tomasz J. Ochalski; Felipe Murphy-Armando; Michael B. Clavel; Mantu K. Hudait; Bernd Witzigmann; Marek Osiński; Yasuhiko Arakawa
Source: Self-asserted source
Michael Clavel via Crossref Metadata Search

Heterogeneously grown tunable group-IV laser on silicon

Quantum Sensing and Nano Electronics and Photonics XIII
2016-02 | Conference paper
DOI: 10.1117/12.2218364
Contributors: Mantu Hudait; M. Clavel; L. Lester; D. Saladukha; T. Ochalski; F. Murphy-Armando; Manijeh Razeghi
Source: Self-asserted source
Michael Clavel via Crossref Metadata Search

Heterogeneously-Grown Tunable Tensile Strained Germanium on Silicon for Photonic Devices

ACS Appl. Mater. Interfaces
2015 | Journal article
DOI: 10.1021/acsami.5b07385
Contributors: Michael Clavel; Dzianis Saladukha; Patrick S. Goley; Tomasz J. Ochalski; Felipe Murphy-Armando; Robert J. Bodnar; Mantu K. Hudait
Source: Self-asserted source
Michael Clavel via Crossref Metadata Search

Tailoring the Valence Band Offset of Al 2 O 3 on Epitaxial GaAs 1– y Sb y with Tunable Antimony Composition

ACS Appl. Mater. Interfaces
2015 | Journal article
DOI: 10.1021/acsami.5b10176
Contributors: Jheng-Sin Liu; Michael Clavel; Mantu K. Hudait
Source: Self-asserted source
Michael Clavel via Crossref Metadata Search

Enhanced Erbium-Doped Ceria Nanostructure Coating to Improve Solar Cell Performance

Materials
2015-11 | Journal article
DOI: 10.3390/ma8115399
Contributors: Nader Shehata; Michael Clavel; Kathleen Meehan; Effat Samir; Soha Gaballah; Mohammed Salah
Source: Self-asserted source
Michael Clavel via Crossref Metadata Search

Magnetotransport Properties of Epitaxial Ge/AlAs Heterostructures Integrated on GaAs and Silicon

ACS Appl. Mater. Interfaces
2015-10 | Journal article
DOI: 10.1021/acsami.5b05814
Contributors: Mantu K. Hudait; Michael Clavel; Patrick S. Goley; Yuantao Xie; Jean J. Heremans
Source: Self-asserted source
Michael Clavel via Crossref Metadata Search

Performance Evaluation of Novel Strain-Engineered Ge-InGaAs Heterojunction Tunnel Field-Effect Transistors

IEEE Trans. Electron Devices
2015-10 | Journal article
DOI: 10.1109/ted.2015.2469536
Contributors: Jheng-Sin Liu; Michael B. Clavel; Mantu K. Hudait
Source: Self-asserted source
Michael Clavel via Crossref Metadata Search

Heteroepitaxial Ge MOS Devices on Si Using Composite AlAs/GaAs Buffer

IEEE J. Electron Devices Soc.
2015-07 | Journal article
DOI: 10.1109/jeds.2015.2425959
Contributors: Peter D. Nguyen; Michael Brian Clavel; Patrick S. Goley; Jheng-Sin Liu; Noah P. Allen; Louis J. Guido; Mantu K. Hudait
Source: Self-asserted source
Michael Clavel via Crossref Metadata Search

Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection

Sci. Rep.
2015-07 | Journal article
DOI: 10.1038/srep12415
Contributors: Souvik Kundu; Michael Clavel; Pranab Biswas; Bo Chen; Hyun-Cheol Song; Prashant Kumar; Nripendra N. Halder; Mantu K. Hudait; Pallab Banerji; Mohan Sanghadasa et al.
Source: Self-asserted source
Michael Clavel via Crossref Metadata Search

Towards a monolithic, substrate-reusable and an all-epitaxial design for III–V-on-Si solar cells

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)
2015-06 | Conference paper
DOI: 10.1109/pvsc.2015.7356241
Contributors: Nikhil Jain; Michael Clavel; Patrick Goley; Mantu Hudait
Source: Self-asserted source
Michael Clavel via Crossref Metadata Search

Strain-Engineered Biaxial Tensile Epitaxial Germanium for High-Performance Ge/InGaAs Tunnel Field-Effect Transistors

IEEE J. Electron Devices Soc.
2015-05 | Journal article
DOI: 10.1109/jeds.2015.2394743
Contributors: Michael Clavel; Patrick Goley; Nikhil Jain; Yan Zhu; Mantu K. Hudait
Source: Self-asserted source
Michael Clavel via Crossref Metadata Search

Integration of SrTiO 3 on Crystallographically Oriented Epitaxial Germanium for Low-Power Device Applications

ACS Appl. Mater. Interfaces
2015-03-11 | Journal article
DOI: 10.1021/am5091726
Contributors: Mantu K. Hudait; Michael Clavel; Yan Zhu; Patrick S. Goley; Souvik Kundu; Deepam Maurya; Shashank Priya
Source: Self-asserted source
Michael Clavel via Crossref Metadata Search

Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications

Sci. Rep.
2015-02 | Journal article
DOI: 10.1038/srep08494
Contributors: Souvik Kundu; Deepam Maurya; Michael Clavel; Yuan Zhou; Nripendra N. Halder; Mantu K. Hudait; Pallab Banerji; Shashank Priya
Source: Self-asserted source
Michael Clavel via Crossref Metadata Search

Mixed-anion GaAs 1− y Sb y graded buffer heterogeneously integrated on Si by molecular beam epitaxy

Appl. Phys. Express
2015-01 | Journal article
DOI: 10.7567/apex.8.025501
Contributors: Mantu K. Hudait; Yan Zhu; Patrick Goley; Michael Clavel; Nikhil Jain
Source: Self-asserted source
Michael Clavel via Crossref Metadata Search

Reduced erbium-doped ceria nanoparticles: one nano-host applicable for simultaneous optical down- and up-conversions

Nanoscale Research Letters
2014 | Journal article
DOI: 10.1186/1556-276x-9-231
Contributors: Nader Shehata; Kathleen Meehan; Ibrahim Hassounah; Mantu Hudait; Nikhil Jain; Michael Clavel; Sarah Elhelw; Nabil Madi
Source: Self-asserted source
Michael Clavel via Crossref Metadata Search

Heterogeneous Integration of Epitaxial Ge on Si using AlAs/GaAs Buffer Architecture: Suitability for Low-power Fin Field-Effect Transistors

Sci. Rep.
2014-11-07 | Journal article
DOI: 10.1038/srep06964
Contributors: Mantu K. Hudait; Michael Clavel; Patrick Goley; Nikhil Jain; Yan Zhu
Source: Self-asserted source
Michael Clavel via Crossref Metadata Search

Growth, strain relaxation properties and high-κ dielectric integration of mixed-anion GaAs1-ySby metamorphic materials

J. Appl. Phys.
2014-10-07 | Journal article
DOI: 10.1063/1.4896880
Contributors: Y. Zhu; M. Clavel; P. Goley; M. K. Hudait
Source: Self-asserted source
Michael Clavel via Crossref Metadata Search

Performance evaluation of heterogeneously integrated 3J InGaP/GaAs/Si tandem solar cells on Si substrate for concentrated photovoltaics

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)
2014-06 | Conference paper
DOI: 10.1109/pvsc.2014.6925120
Contributors: Nikhil Jain; Yan Zhu; Michael Clavel; Mantu Hudait
Source: Self-asserted source
Michael Clavel via Crossref Metadata Search
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