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Employment (2)

National Institute of Advanced Industrial Science and Technology: Tosu, Saga, JP

2023-04-01 to present | Senior Researcher
Employment
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Mutsunori Uenuma

Nara Institute of Science and Technology（NAIST）: Ikoma, Nara, JP

2020-06-01 to 2023-03-31 | Associate Professor (Division of Materials Science, Graduate School of Science and Technology)
Employment
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Nara Institute of Science and Technology (NAIST)

Works (11)

A 3D Vertical-Channel Ferroelectric/Anti-Ferroelectric FET With Indium Oxide

IEEE Electron Device Letters
2022-08 | Journal article
DOI: 10.1109/LED.2022.3184316
Contributors: Zhuo Li; Jixuan Wu; Xiaoran Mei; Xingyu Huang; Takuya Saraya; Toshiro Hiramoto; Takanori Takahashi; Mutsunori Uenuma; Yukiharu Uraoka; Masaharu Kobayashi
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Crossref

Atomic structure analysis of gallium oxide at the Al2O3/GaN interface using photoelectron holography

Applied Physics Express
2022-08-01 | Journal article
DOI: 10.35848/1882-0786/ac7dd9
Contributors: Mutsunori Uenuma; Shingo Kuwaharada; Hiroto Tomita; Masaki Tanaka; Zexu Sun; Yusuke Hashimoto; Mami N. Fujii; Tomohiro Matsushita; Yukiharu Uraoka
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Crossref

Orientation dependent etching of polycrystalline diamond by hydrogen plasma

Applied Physics Letters
2022-07-11 | Journal article
DOI: 10.1063/5.0090715
Contributors: Daichi Yoshii; Mami N. Fujii; Mutsunori Uenuma; Yukiharu Uraoka
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Crossref

Effects of carbon impurity in ALD-Al2O3 film on HAXPES spectrum and electrical properties of Al2O3/AlGaN/GaN MIS structure

Japanese Journal of Applied Physics
2022-06-01 | Journal article
DOI: 10.35848/1347-4065/ac646d
Contributors: Takuya Shibata; Mutsunori Uenuma; Takahiro Yamada; Koji Yoshitsugu; Masato Higashi; Kunihiko Nishimura; Yukiharu Uraoka
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Crossref

Enhanced Thermoelectric Transport and Stability in Atomic Layer Deposited-HfO2/ZnO and TiO2/ZnO-Sandwiched Multilayer Thin Films

ACS Applied Materials & Interfaces
2020-10-28 | Journal article
DOI: 10.1021/acsami.0c11439
Contributors: Jenichi Felizco; Taneli Juntunen; Mutsunori Uenuma; Jarkko Etula; Camilla Tossi; Yasuaki Ishikawa; Ilkka Tittonen; Yukiharu Uraoka
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Crossref

Evaluate Fixed Charge and Oxide‐Trapped Charge on SiO2/GaN Metal‐Oxide‐Semiconductor Structure Before and After Postannealing

physica status solidi (b)
2020-02 | Journal article
DOI: 10.1002/pssb.201900444
Contributors: Masaaki Furukawa; Mutsunori Uenuma; Yasuaki Ishikawa; Yukiharu Uraoka
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Crossref

The Influence of Ga–OH Bond at Initial GaN Surface on the Electrical Characteristics of SiO2/GaN Interface

physica status solidi (b)
2020-02 | Journal article
DOI: 10.1002/pssb.201900368
Contributors: Mutsunori Uenuma; Ryota Ando; Masaaki Furukawa; Yukiharu Uraoka
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Crossref

Effective Trapping Reduction in SiO2/GaN MOS Structure by High Pressure Water Vapor Annealing

ECS Journal of Solid State Science and Technology
2019 | Journal article
DOI: 10.1149/2.0021908jss
Contributors: Tengda Lin; Mutsunori Uenuma; Masaaki Fururkawa; Juan Paolo Soria Bermundo; Yasuaki Ishikawan; Yukiharu Uraoka
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Crossref

Degradation phenomenon in metal-oxide-semiconductor thin-film transistors and techniques for its reliability evaluation and suppression

Japanese Journal of Applied Physics
2019-09-01 | Journal article
DOI: 10.7567/1347-4065/ab1604
Contributors: Yukiharu Uraoka; Juan Paolo Bermundo; Mami N. Fujii; Mutsunori Uenuma; Yasuaki Ishikawa
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Crossref

Flexible TEG Using Amorphous InGaZnO Thin Film

Journal of Electronic Materials
2019-04 | Journal article
DOI: 10.1007/s11664-018-06854-4
Contributors: Mutsunori Uenuma; Kenta Umeda; Jenichi Felizco; Daiki Senaha; Yukiharu Uraoka
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Crossref

Physical and electrical properties of ALD-Al2O3/GaN MOS capacitor annealed with high pressure water vapor

Japanese Journal of Applied Physics
2019-04-01 | Journal article
DOI: 10.7567/1347-4065/ab09a2
Contributors: Yuta Fujimoto; Mutsunori Uenuma; Tsubasa Nakamura; Masaaki Furukawa; Yasuaki Ishikawa; Yukiharu Uraoka
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Crossref
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