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ResearcherID: R-2927-2018

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Employment (3)

Applied Materials: CA, CA, US

2018-07-02 to present | Process engineer (MDP)
Employment
Source: Self-asserted source
wei dou

University of Arkansas Fayetteville: Fayetteville, AR, US

2013-08-13 to 2018-08-01 | Research assistant (Electrical engineering)
Employment
Source: Self-asserted source
wei dou

University of the Chinese Academy of Sciences: Beijing, Beijing, CN

2010-09-01 to 2013-07-15 | Reach assistant (Institute of Microelectronics)
Employment
Source: Self-asserted source
wei dou

Education and qualifications (3)

University of Arkansas Fayetteville: Fayetteville, AR, US

2013-08-13 to 2018-08-13 | PHD (Electrical Engineering)
Education
Source: Self-asserted source
wei dou

University of the Chinese Academy of Sciences: Beijing, Beijing, CN

2010-08-28 to 2013-07-15 | Master (Institute of Microelectronics)
Education
Source: Self-asserted source
wei dou

Shandong University: Jinan, Shandong, CN

2006-09-01 to 2010-06-30 | Bachelor (Physics)
Education
Source: Self-asserted source
wei dou

Works (20)

Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission

Nanotechnology
2022-02-19 | Journal article
DOI: 10.1088/1361-6528/ac38e4
Contributors: Oluwatobi Olorunsola; Solomon Ojo; Grey Abernathy; Yiyin Zhou; Sylvester Amoah; P C Grant; Wei Dou; Joe Margetis; John Tolle; Andrian Kuchuk et al.
Source: check_circle
Crossref

Low temperature epitaxy of high-quality Ge buffer using plasma enhancement via UHV-CVD system for photonic device applications

Applied Surface Science
2019-07 | Journal article
DOI: 10.1016/j.apsusc.2019.03.062
Contributors: Bader Alharthi; Wei Dou; Perry C. Grant; Joshua M. Grant; Timothy Morgan; Aboozar Mosleh; Wei Du; Baohua Li; Mansour Mortazavi; Hameed Naseem et al.
Source: check_circle
Crossref

All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K

Applied Physics Letters
2018-11-26 | Journal article
DOI: 10.1063/1.5052563
Contributors: Joe Margetis; Yiyin Zhou; Wei Dou; Perry C. Grant; Bader Alharthi; Wei Du; Alicia Wadsworth; Qianying Guo; Huong Tran; Solomon Ojo et al.
Source: check_circle
Crossref

Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth

Scientific Reports
2018-04-01 | Journal article
Source: Self-asserted source
wei dou

Structural and Optical Characteristics of GeSn Quantum Wells for Silicon-Based Mid-Infrared Optoelectronic Applications

Journal of Electronic Materials
2016-12 | Journal article
DOI: 10.1007/s11664-016-5031-2
Contributors: Wei Dou; Seyed Amir Ghetmiri; Sattar Al-Kabi; Aboozar Mosleh; Yiyin Zhou; Bader Alharthi; Wei Du; Joe Margetis; John Tolle; Andrian Kuchuk et al.
Source: check_circle
Crossref

Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications

2016-07-14 | Journal article
Source: Self-asserted source
wei dou

An optically pumped 2.5 μm GeSn laser on Si operating at 110 K

Applied Physics Letters
Journal article
Source: Self-asserted source
wei dou

Buffer-Free GeSn and SiGeSn Growth on Si Substrate Using In Situ SnD4 Gas Mixing

Journal of Electronic Materials
Journal article
Source: Self-asserted source
wei dou

CMOS Compatible Growth of High Quality Ge, SiGe and SiGeSn for Photonic Device Applications

ECS Transactions
Journal article
Source: Self-asserted source
wei dou

Comparison study of the low temperature growth of dilute GeSn and Ge

Journal of Vacuum Science & Technology B
Journal article
Source: Self-asserted source
wei dou

Direct bandgap type-I GeSn/GeSn quantum well on a GeSn-and Ge-buffered Si substrate

Journal article
Source: Self-asserted source
wei dou

Enhancement of Material Quality of (Si) GeSn Films Grown by SnCl4 Precursor

Journal article
Source: Self-asserted source
wei dou

Fundamentals of Ge1−xSnx and SiyGe1−x-ySnx RPCVD epitaxy

Journal article
Source: Self-asserted source
wei dou

Optical Characterization of Si-Based Ge1−x Sn x Alloys with Sn Compositions up to 12%

Journal article
Source: Self-asserted source
wei dou

Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K

Journal article
Source: Self-asserted source
wei dou

SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system

Journal article
Source: Self-asserted source
wei dou

Structural and Optical Characteristics of GeSn Quantum Wells for Silicon-Based Mid-Infrared Optoelectronic Applications

Journal article
Source: Self-asserted source
wei dou

Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics

Journal article
Source: Self-asserted source
wei dou

Study of High-Quality GeSn Alloys Grown by Chemical Vapor Deposition towards Mid-Infrared Applications

Journal article
Source: Self-asserted source
wei dou

Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas

Journal article
Source: Self-asserted source
wei dou

Peer review (3 reviews for 1 publication/grant)

Review activity for Journal of electronic materials. (3)
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