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Education and qualifications (2)

Tsinghua University: Beijing, Beijing, CN

2021-08-31 to 2022-06-26 | Master of Global Affairs (Schwarzman College)
Education
Source: Self-asserted source
Jiaheng He

University of Michigan: Ann Arbor, MI, US

2017-08-31 to 2021-04-30 | Bachelor of Science with high honor (Physics)
Education
Source: Self-asserted source
Jiaheng He

Works (10)

High performance deep-ultraviolet light-emitting diodes with transverse electron injection

Optics & Laser Technology
2024-10 | Journal article
DOI: 10.1016/j.optlastec.2024.111095
Contributors: Xingfa Gao; Lei Ye; Jie Yang; Ranran Wang; Xinyuan Wang; Jiaheng He; Bingyue Cui; Lian Zhang; Zhe Liu; Yun Zhang
Source: check_circle
Crossref

Deep-ultraviolet LEDs with an Al-graded p-AlGaN layer exhibiting high wall-plug efficiency and high modulation bandwidth simultaneously

Semiconductor Science and Technology
2024-03-01 | Journal article
DOI: 10.1088/1361-6641/ad238b
Contributors: Bingyue Cui; Jie Yang; Xingfa Gao; Jiaheng He; Zhe Liu; Zhe Cheng; Yun Zhang
Source: check_circle
Crossref

Dynamic Performance Analysis of Logic Gates Based on p-GaN/AlGaN/GaN HEMTs at High Temperature

IEEE Electron Device Letters
2023 | Journal article
DOI: 10.1109/LED.2023.3267835
Contributors: Ranran Wang; Lifang Jia; Xingfa Gao; Jiaheng He; Zhe Cheng; Zhe Liu; Lian Zhang; Yun Zhang
Source: check_circle
Crossref

Demonstration of 420GHz highly scaled InAlN/GaN HEMTs by Electron Beam Lithography

2023 International Workshop on Advanced Patterning Solutions (IWAPS)
2023-10-26 | Conference poster
DOI: 10.1109/iwaps60466.2023.10366124
Contributors: Jiaheng He; Zhe Cheng; Chengcheng Li; Shujie Xie; Xuankun Wu; Lian Zhang; Chang Wu; Yun Zhang
Source: Self-asserted source
Jiaheng He

Simulation and Comprehensive Analysis of AlGaN/GaN HBT for High Voltage and High Current

Electronics
2023-08-25 | Journal article
DOI: 10.3390/electronics12173590
Contributors: Xinyuan Wang; Lian Zhang; Jiaheng He; Zhe Cheng; Zhe Liu; Yun Zhang
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Scaled InAlN/GaN HEMT on Sapphire With fT/fmax of 190/301 GHz

IEEE Transactions on Electron Devices
2023-06 | Journal article
DOI: 10.1109/TED.2023.3269728
Contributors: Yawei He; Lian Zhang; Zhe Cheng; Chengcheng Li; Jiaheng He; Shujie Xie; Xuankun Wu; Chang Wu; Yun Zhang
Source: check_circle
Crossref

Wide Range CCT Laser-Based Illuminant With High Efficiency and Excellent Optical Performances

IEEE Photonics Technology Letters
2023-06-01 | Journal article
DOI: 10.1109/LPT.2023.3266479
Contributors: Lei Ye; Jie Yang; Jiaheng He; Hua Yang; Weiqiang Zhao; Ping Chen; Zhe Liu; Yun Zhang
Source: check_circle
Crossref

AlN/Sapphire-Based SAW Resonators With Q Over 10000 for Temperature Sensors

IEEE Sensors Journal
2023-04-15 | Journal article
DOI: 10.1109/JSEN.2023.3253956
Contributors: Yujie Ai; Hongrui Lv; Yinglong Huang; Jiaheng He; Ye Wang; Jiwen Wu; Yun Zhang
Source: check_circle
Crossref

N-AlGaN Free Deep-Ultraviolet Light-Emitting Diode with Transverse Electron Injection

ACS Photonics
2023-02-14 | Journal article
DOI: 10.1021/acsphotonics.2c01558
Part of ISSN: 2330-4022
Part of ISSN: 2330-4022
Contributors: Xingfa Gao; Xingfa Gao; Jiaheng He; Bingyue Cui; Lian Zhang; Zhe Liu; Yujie Ai; Defeng Lin; Mingtong Wu; Yun Zhang
Source: Self-asserted source
Jiaheng He

Low-damage, in-situ chemical etching of GaN by tertiarybutyl-chloride (TBCl)

2022 Compound Semiconductor Week (CSW)
2022-06-01 | Conference paper
DOI: 10.1109/csw55288.2022.9930356
Contributors: Bingjun Li; Sizhen Wang; Sam Frisone; Jiaheng He; Guanjie Cheng; Zhirong Zhang; Rachel Goldman; Jung Han
Source: Self-asserted source
Jiaheng He
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