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Scopus Author ID: 36739423400

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Works (21)

Quantum Dot Lasers Directly Grown on 300 mm Si Wafers: Planar and In-Pocket

Photonics
2023-05 | Journal article | Author
DOI: 10.3390/photonics10050534
Contributors: Kaiyin Feng; Chen Shang; Eamonn Hughes; Andrew Clark; Rosalyn Koscica; Peter Ludewig; David Harame; John Bowers
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Multidisciplinary Digital Publishing Institute

Compositional dependence of the band gap in Ga(NAsP) quantum well heterostructures

Journal of Applied Physics
2015 | Journal article
DOI: 10.1063/1.4928331
EID:

2-s2.0-84939163898
Contributors: Jandieri, K.; Ludewig, P.; Wegele, T.; Beyer, A.; Kunert, B.; Springer, P.; Baranovskii, S.D.; Koch, S.W.; Volz, K.; Stolz, W.
Source: Self-asserted source
Peter Ludewig via Scopus - Elsevier

Determination of type-I band offsets in GaBi<inf>x</inf>As<inf>1-x</inf> quantum wells using polarisation-resolved photovoltage spectroscopy and 12-band k.p calculations

Semiconductor Science and Technology
2015 | Journal article
DOI: 10.1088/0268-1242/30/9/094009
EID:

2-s2.0-84936093042
Contributors: Broderick, C.A.; Harnedy, P.E.; Ludewig, P.; Bushell, Z.L.; Volz, K.; Manning, R.J.; O'Reilly, E.P.
Source: Self-asserted source
Peter Ludewig via Scopus - Elsevier

MOVPE growth mechanisms of dilute bismide III/V alloys

Semiconductor Science and Technology
2015 | Journal article
DOI: 10.1088/0268-1242/30/9/094017
EID:

2-s2.0-84936124825
Contributors: Ludewig, P.; Nattermann, L.; Stolz, W.; Volz, K.
Source: Self-asserted source
Peter Ludewig via Scopus - Elsevier

MOVPE growth of Ga(AsBi)/GaAs using different metalorganic precursors

Journal of Crystal Growth
2015 | Journal article
DOI: 10.1016/j.jcrysgro.2015.05.015
EID:

2-s2.0-84930639573
Contributors: Nattermann, L.; Ludewig, P.; Meckbach, L.; Ringler, B.; Keiper, D.; Von Hänisch, C.; Stolz, W.; Volz, K.
Source: Self-asserted source
Peter Ludewig via Scopus - Elsevier

Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers

Semiconductor Science and Technology
2015 | Journal article
DOI: 10.1088/0268-1242/30/9/094008
EID:

2-s2.0-84936079892
Contributors: Marko, I.P.; Jin, S.R.; Hild, K.; Batool, Z.; Bushell, Z.L.; Ludewig, P.; Stolz, W.; Volz, K.; Butkute, R.; Pačebutas, V. et al.
Source: Self-asserted source
Peter Ludewig via Scopus - Elsevier

Two-energy-scale model for description of the thermal quenching of photoluminescence in disordered Ga(As,Bi)

Physica Status Solidi (C) Current Topics in Solid State Physics
2015 | Journal article
DOI: 10.1002/pssc.201400369
EID:

2-s2.0-84939652127
Contributors: Shakfa, M.K.; Wiemer, M.; Ludewig, P.; Jandieri, K.; Volz, K.; Stolz, W.; Baranovskii, S.D.; Koch, M.
Source: Self-asserted source
Peter Ludewig via Scopus - Elsevier

Thermal quenching of photoluminescence in Ga(AsBi)

J. Appl. Phys.
2015-01 | Journal article
DOI: 10.1063/1.4905687
Contributors: M. K. Shakfa; M. Wiemer; P. Ludewig; K. Jandieri; K. Volz; W. Stolz; S. D. Baranovskii; M. Koch
Source: Self-asserted source
Peter Ludewig via Crossref Metadata Search
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Electrically injected GaAsBi quantum well lasers

Conference Digest - IEEE International Semiconductor Laser Conference
2014 | Conference paper
DOI: 10.1109/ISLC.2014.173
EID:

2-s2.0-84920158012
Contributors: Sweeney, S.J.; Marko, I.P.; Jin, S.R.; Hild, K.; Batool, Z.; Ludewig, P.; Natterman, L.; Bushell, Z.; Stolz, W.; Volz, K. et al.
Source: Self-asserted source
Peter Ludewig via Scopus - Elsevier

Multi-quantum well Ga(AsBi)/GaAs laser diodes with more than 6% of bismuth

Electronics Letters
2014 | Journal article
DOI: 10.1049/el.2014.1741
EID:

2-s2.0-84905274024
Contributors: Butkute, R.; Geižutis, A.; Pačebutas, V.; Čechavičius, B.; Bukauskas, V.; Kundrotas, R.; Ludewig, P.; Volz, K.; Krotkus, A.
Source: Self-asserted source
Peter Ludewig via Scopus - Elsevier

Physical properties and optimization of GaBiAs/(Al)GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi

Journal of Physics D: Applied Physics
2014 | Journal article
DOI: 10.1088/0022-3727/47/34/345103
EID:

2-s2.0-84905910515
Contributors: Marko, I.P.; Ludewig, P.; Bushell, Z.L.; Jin, S.R.; Hild, K.; Batool, Z.; Reinhard, S.; Nattermann, L.; Stolz, W.; Volz, K. et al.
Source: Self-asserted source
Peter Ludewig via Scopus - Elsevier

Luminescence properties of dilute bismide systems

Journal of Luminescence
2014-10 | Journal article
DOI: 10.1016/j.jlumin.2014.04.012
Contributors: B. Breddermann; A. Bäumner; S.W. Koch; P. Ludewig; W. Stolz; K. Volz; J. Hader; J.V. Moloney; C.A. Broderick; E.P. O׳Reilly
Source: Self-asserted source
Peter Ludewig via Crossref Metadata Search
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Growth and characterisation of Ga(NAsBi) alloy by metal–organic vapour phase epitaxy

Journal of Crystal Growth
2014-06 | Journal article
DOI: 10.1016/j.jcrysgro.2014.03.038
Contributors: Z.L. Bushell; P. Ludewig; N. Knaub; Z. Batool; K. Hild; W. Stolz; S.J. Sweeney; K. Volz
Source: Self-asserted source
Peter Ludewig via Crossref Metadata Search
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Growth of Ga(AsBi) on GaAs by continuous flow MOVPE

Journal of Crystal Growth
2014-06 | Journal article
DOI: 10.1016/j.jcrysgro.2014.03.041
Contributors: P. Ludewig; Z.L. Bushell; L. Nattermann; N. Knaub; W. Stolz; K. Volz
Source: Self-asserted source
Peter Ludewig via Crossref Metadata Search
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Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser

Applied Physics Letters
2013 | Journal article
DOI: 10.1063/1.4811736
EID:

2-s2.0-84879834722
Contributors: Ludewig, P.; Knaub, N.; Hossain, N.; Reinhard, S.; Nattermann, L.; Marko, I.P.; Jin, S.R.; Hild, K.; Chatterjee, S.; Stolz, W. et al.
Source: Self-asserted source
Peter Ludewig via Scopus - Elsevier

MOVPE growth of Ga(AsBi)/GaAs multi quantum well structures

Journal of Crystal Growth
2013-05 | Journal article
DOI: 10.1016/j.jcrysgro.2012.07.002
Contributors: P. Ludewig; N. Knaub; W. Stolz; K. Volz
Source: Self-asserted source
Peter Ludewig via Crossref Metadata Search
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Physical properties of monolithically integrated Ga(NAsP)/(BGa)P QW lasers on silicon

IEEE International Conference on Group IV Photonics GFP
2011 | Conference paper
DOI: 10.1109/GROUP4.2011.6053745
EID:

2-s2.0-81355163394
Contributors: Hossain, N.; Jin, S.R.; Sweeney, S.J.; Liebich, S.; Ludewig, P.; Zimprich, M.; Volz, K.; Kunert, B.; Stolz, W.
Source: Self-asserted source
Peter Ludewig via Scopus - Elsevier

MOVPE growth and characterization of Ga(NAsP) laser structures monolithically integrated on Si (001) substrates

Conference Digest - IEEE International Semiconductor Laser Conference
2010 | Conference paper
DOI: 10.1109/ISLC.2010.5642712
EID:

2-s2.0-78651091569
Contributors: Liebich, S.; Zimprich, M.; Ludewig, P.; Beyer, A.; Volz, K.; Stolz, W.; Kunert, B.; Hossain, N.; Jin, S.R.; Sweeney, S.J.
Source: Self-asserted source
Peter Ludewig via Scopus - Elsevier

On the temperature dependence of monolithically integrated Ga(NAsP)/(BGa)P/Si QW lasers

Optics InfoBase Conference Papers
2010 | Conference paper
EID:

2-s2.0-84897678607
Contributors: Hossain, N.; Jin, S.R.; Sweeney, S.J.; Liebich, S.; Ludewig, P.; Zimprich, M.; Kunert, B.; Volz, K.; Stolz, W.
Source: Self-asserted source
Peter Ludewig via Scopus - Elsevier

On the Temperature Dependence of Monolithically Integrated Ga(NAsP)/(BGa)P/Si QW Lasers

Frontiers in Optics 2010/Laser Science XXVI
2010 | Conference paper
DOI: 10.1364/fio.2010.fwd6
Contributors: Nadir Hossain; Shirong R. Jin; Stephen J. Sweeney; Sven Liebich; Peter Ludewig; Martin Zimprich; Bernardette Kunert; Kerstin Volz; Wolfgang Stolz
Source: Self-asserted source
Peter Ludewig via Crossref Metadata Search

Lasing properties of monolithically integrated Ga(NAsP)/(BGa)P QW lasers on a silicon substrate grown by MOVPE

22nd IEEE International Semiconductor Laser Conference
2010-09 | Conference paper
DOI: 10.1109/islc.2010.5642727
Contributors: Nadir Hossain; Shirong R. Jin; Stephen J. Sweeney; Sven Liebich; Peter Ludewig; Martin Zimprich; Bernardette Kunert; Kerstin Volz; Wolfgang Stolz
Source: Self-asserted source
Peter Ludewig via Crossref Metadata Search
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