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Employment (1)

US Naval Research Laboratory: Washington, DC, US

Head, High Power Devices Section (Electronic Sciences and Technology Division / Power Electronics Branch)
Employment
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Karl Hobart

Works (16)

Hybrid Edge Termination for High-Voltage Vertical GaN Devices: Empirical Validation and Robust Processing Tolerance

IEEE Transactions on Electron Devices
2024 | Journal article
DOI: 10.1109/TED.2024.3383419
Contributors: Prakash Pandey; Tolen M. Nelson; Michael R. Hontz; Daniel G. Georgiev; Raghav Khanna; Alan G. Jacobs; James S. Lundh; James C. Gallagher; Andrew D. Koehler; Karl D. Hobart et al.
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Leakage Current and Breakdown Characteristics of Isolation in Gallium Nitride Lateral Power Devices

IEEE Transactions on Electron Devices
2024-11 | Journal article
DOI: 10.1109/TED.2024.3458945
Contributors: Mansura Sadek; Sang-Woo Han; Anusmita Chakravorty; Jesse T. Kemmerling; Rian Guan; Jianan Song; Yixin Xiong; James Lundh; Karl D. Hobart; Travis J. Anderson et al.
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Suppression of Enhanced Magnesium Diffusion During High‐Pressure Annealing of Implanted GaN

physica status solidi (a)
2024-11 | Journal article
DOI: 10.1002/pssa.202400080
Contributors: Alan G. Jacobs; Boris N. Feigelson; James S. Lundh; Joseph A. Spencer; Jaime A. Freitas; Brendan P. Gunning; Robert J. Kaplar; Yuhao Zhang; Marko J. Tadjer; Karl D. Hobart et al.
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Epitaxial growth of GaN on β-Ga2O3 via RF plasma nitridation

Journal of Applied Physics
2024-10-21 | Journal article
DOI: 10.1063/5.0233590
Contributors: Frank P. Kelly; Matthew M. Landi; Riley E. Vesto; Marko J. Tadjer; Karl D. Hobart; Kyekyoon Kim
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Experimental Validation of Robust Hybrid Edge Termination Structures in Vertical GaN p-i-n Diodes With Avalanche Capability

IEEE Electron Device Letters
2024-05 | Journal article
DOI: 10.1109/LED.2024.3377532
Contributors: James Spencer Lundh; Alan G. Jacobs; Prakash Pandey; Tolen Nelson; Daniel G. Georgiev; Andrew D. Koehler; Raghav Khanna; Marko J. Tadjer; Karl D. Hobart; Travis J. Anderson
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Examination of Trapping Effects on Single-Event Transients in GaN HEMTs

IEEE Transactions on Nuclear Science
2023 | Journal article
DOI: 10.1109/TNS.2022.3220235
Contributors: Tolen Nelson; Daniel G. Georgiev; Michael R. Hontz; Raghav Khanna; Adrian Ildefonso; Andrew D. Koehler; Karl Hobart; Ani Khachatrian; Dale McMorrow
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Novel Codoping Moiety to Achieve Enhanced P‐Type Doping in GaN by Ion Implantation

physica status solidi (a)
2023-08 | Journal article
DOI: 10.1002/pssa.202200848
Contributors: Alan G. Jacobs; Joseph A. Spencer; Jennifer K. Hite; Karl D. Hobart; Travis J. Anderson; Boris N. Feigelson
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Hybrid Edge Termination in Vertical GaN: Approximating Beveled Edge Termination via Discrete Implantations

IEEE Transactions on Electron Devices
2022-12 | Journal article
DOI: 10.1109/TED.2022.3215107
Contributors: Tolen Nelson; Prakash Pandey; Daniel G. Georgiev; Michael R. Hontz; Andrew D. Koehler; Karl D. Hobart; Travis J. Anderson; Adrian Ildefonso; Raghav Khanna
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Impact of Anode Thickness on Breakdown Mechanisms in Vertical GaN PiN Diodes with Planar Edge Termination

Crystals
2022-04-27 | Journal article
DOI: 10.3390/cryst12050623
Contributors: Mona Ebrish; Matthew Porter; Alan Jacobs; James Gallagher; Robert Kaplar; Brendan Gunning; Karl Hobart; Travis Anderson
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Steady-state methods for measuring in-plane thermal conductivity of thin films for heat spreading applications

Review of Scientific Instruments
2021-04-01 | Journal article
DOI: 10.1063/5.0039966
Contributors: Nicholas J. Hines; Luke Yates; Brian M. Foley; Zhe Cheng; Thomas L. Bougher; Mark S. Goorsky; Karl D. Hobart; Tatyana I. Feygelson; Marko J. Tadjer; Samuel Graham
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High-Resolution Thermoreflectance Imaging Investigation of Self-Heating in AlGaN/GaN HEMTs on Si, SiC, and Diamond Substrates

IEEE Transactions on Electron Devices
2020-12 | Journal article
DOI: 10.1109/TED.2020.3028557
Contributors: Assaad El Helou; Pavel Komarov; Marko Jak Tadjer; Travis J. Anderson; Daniel A. Francis; Tatyana Feygelson; Bradford B. Pate; Karl D. Hobart; Peter E. Raad
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A Study on the Impact of Mid-Gap Defects on Vertical GaN Diodes

IEEE Transactions on Semiconductor Manufacturing
2020-11 | Journal article
DOI: 10.1109/TSM.2020.3019212
Contributors: Mona A. Ebrish; Travis J. Anderson; Andrew D. Koehler; Geoffrey M. Foster; James C. Gallagher; Robert J. Kaplar; Brendan P. Gunning; Karl D. Hobart
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Structural transition and recovery of Ge implanted β -Ga2O3

Applied Physics Letters
2020-10-12 | Journal article
DOI: 10.1063/5.0022170
Contributors: Elaf A. Anber; Daniel Foley; Andrew C. Lang; James Nathaniel; James L. Hart; Marko J. Tadjer; Karl D. Hobart; Stephen Pearton; Mitra L. Taheri
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Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments

Applied Physics Letters
2020-08-24 | Journal article
DOI: 10.1063/5.0021153
Contributors: Geoffrey M. Foster; Andrew Koehler; Mona Ebrish; James Gallagher; Travis Anderson; Brenton Noesges; Leonard Brillson; Brendan Gunning; Karl D. Hobart; Francis Kub
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Integration of polycrystalline Ga2O3 on diamond for thermal management

Applied Physics Letters
2020-02-10 | Journal article
DOI: 10.1063/1.5125637
Contributors: Zhe Cheng; Virginia D. Wheeler; Tingyu Bai; Jingjing Shi; Marko J. Tadjer; Tatyana Feygelson; Karl D. Hobart; Mark S. Goorsky; Samuel Graham
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Reduced Contact Resistance in GaN Using Selective Area Si Ion Implantation

IEEE Transactions on Semiconductor Manufacturing
2019-11 | Journal article
DOI: 10.1109/TSM.2019.2932272
Contributors: James C. Gallagher; Francis J. Kub; Travis J. Anderson; Andrew D. Koehler; Geoffrey M. Foster; Alan G. Jacobs; Boris N. Feigelson; Michael A. Mastro; Jennifer K. Hite; Karl D. Hobart
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Peer review (2 reviews for 2 publications/grants)

Review activity for Advanced materials. (1)
Review activity for Journal of computational electronics. (1)
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