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Works (32)

Fowler–Nordheim Stress-Induced Degradation of Buried-Channel-Array Transistors in DRAM Cell for Cryogenic Memory Applications

IEEE Transactions on Electron Devices
2023-01 | Journal article
DOI: 10.1109/TED.2022.3221028
Contributors: Sungju Choi; Ga Won Yang; Sangwon Lee; Jingyu Park; Changwook Kim; Jun Park; Hyun-Seok Choi; Namhyun Lee; Gang-Jun Kim; Yoon Kim et al.
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Spatial Degradation Profiling Technique in Self-Aligned Top-Gate a-InGaZnO TFTs Under Current-Flowing Stress

IEEE Electron Device Letters
2023-01 | Journal article
DOI: 10.1109/LED.2022.3225838
Contributors: Jingyu Park; Sungju Choi; Seung Joo Myoung; Jae-Young Kim; Changwook Kim; Sung-Jin Choi; Dong Myong Kim; Jong-Ho Bae; Dae Hwan Kim
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Physics-Based Compact Model of Current Stress-Induced Threshold Voltage Shift in Top-Gate Self-Aligned Amorphous InGaZnO Thin-Film Transistors

IEEE Electron Device Letters
2022-10 | Journal article
DOI: 10.1109/LED.2022.3202992
Contributors: Tae Jun Yang; Jingyu Park; Sungju Choi; Changwook Kim; Moonsup Han; Jong-Ho Bae; Sung-Jin Choi; Dong Myong Kim; Hong Jae Shin; Yun Sik Jeong et al.
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Excessive Oxygen Peroxide Model‐Based Analysis of Positive‐Bias‐Stress and Negative‐Bias‐Illumination‐Stress Instabilities in Self‐Aligned Top‐Gate Coplanar In–Ga–Zn–O Thin‐Film Transistors

Advanced Electronic Materials
2022-05 | Journal article | Writing - original draft, Writing - review & editing, Conceptualization, Data curation, Formal analysis
DOI: 10.1002/aelm.202101062
Part of ISSN: 2199-160X
Part of ISSN: 2199-160X
Contributors: Sungju Choi
Source: Self-asserted source
Sungju Choi

Total Subgap Range Density of States-Based Analysis of the Effect of Oxygen Flow Rate on the Bias Stress Instabilities in a-IGZO TFTs

IEEE Transactions on Electron Devices
2022-01 | Journal article
DOI: 10.1109/TED.2021.3130219
Contributors: Ga Won Yang; Jingyu Park; Sungju Choi; Changwook Kim; Dong Myong Kim; Sung-Jin Choi; Jong-Ho Bae; Il Hwan Cho; Dae Hwan Kim
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Crossref

Unscrambling for Subgap Density-of-States in Multilayered MoS2 Field Effect Transistors under DC Bias Stress via Optical Charge-Pumping Capacitance-Voltage Spectroscopy

IEEE Access
2021 | Journal article
DOI: 10.1109/ACCESS.2021.3081095
Contributors: Ga Won Yang; Seung Gi Seo; Sungju Choi; Dae Hwan Kim; Sung Hun Jin
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Crossref

Extraction Technique for Flat Band Voltage Using Multi-Frequency C – V Characteristics in Amorphous InGaZnO Thin-Film-Transistors

IEEE Electron Device Letters
2020-12 | Journal article
DOI: 10.1109/LED.2020.3032442
Contributors: Sungju Choi; Inseok Chae; Jingyu Park; Youngjin Seo; Chang Il Ryoo; Dong Myong Kim; Sung-Jin Choi; Dong-Wook Park; Dae Hwan Kim
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Positive Bias Stress Instability of InGaZnO TFTs With Self-Aligned Top-Gate Structure in the Threshold-Voltage Compensated Pixel

IEEE Electron Device Letters
2020-01 | Journal article
DOI: 10.1109/LED.2019.2954543
Contributors: Sungju Choi; Sung-Jin Choi; Dae Hwan Kim; Shinyoung Park; Jaeyoung Kim; Youngjin Seo; Hong Jae Shin; Yun Sik Jeong; Jong Uk Bae; Chang Ho Oh et al.
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Oxygen Content and Bias Influence on Amorphous InGaZnO TFT-Based Temperature Sensor Performance

IEEE Electron Device Letters
2019 | Journal article
DOI: 10.1109/led.2019.2937157
Part of ISSN: 0741-3106
Part of ISSN: 1558-0563
Source: Self-asserted source
Sungju Choi
grade
Preferred source (of 2)‎

ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors

Nature Communications
2019-12 | Journal article
DOI: 10.1038/s41467-019-09998-x
Part of ISSN: 2041-1723
Source: Self-asserted source
Sungju Choi

Implementing an artificial synapse and neuron using a Si nanowire ion-sensitive field-effect transistor and indium-gallium-zinc-oxide memristors

Sensors and Actuators B: Chemical
2019-10 | Journal article
DOI: 10.1016/j.snb.2019.05.093
Contributors: Sungju Choi; Seohyeon Kim; Jungkyu Jang; Gumho Ahn; Jun Tae Jang; Jinsu Yoon; Tae Jung Park; Byung-Gook Park; Dong Myong Kim; Sung-Jin Choi et al.
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Ultrasensitive Electrical Detection of Hemagglutinin for Point-of-Care Detection of Influenza Virus Based on a CMP-NANA Probe and Top-Down Processed Silicon Nanowire Field-Effect Transistors

Sensors
2019-10-17 | Journal article
DOI: 10.3390/s19204502
Contributors: Mihee Uhm; Jin-Moo Lee; Jieun Lee; Jung Han Lee; Sungju Choi; Byung-Gook Park; Dong Myong Kim; Sung-Jin Choi; Hyun-Sun Mo; Yong-Joo Jeong et al.
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Crossref
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Effect of Simultaneous Mechanical and Electrical Stress on the Electrical Performance of Flexible In-Ga-Zn-O Thin-Film Transistors

Materials
2019-10-04 | Journal article
DOI: 10.3390/ma12193248
Contributors: Youngjin Seo; Hwan-Seok Jeong; Ha-Yun Jeong; Shinyoung Park; Jun Tae Jang; Sungju Choi; Dong Myong Kim; Sung-Jin Choi; Xiaoshi Jin; Hyuck-In Kwon et al.
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Influence of the Gate/Drain Voltage Configuration on the Current Stress Instability in Amorphous Indium-Zinc-Oxide Thin-Film Transistors With Self-Aligned Top-Gate Structure

IEEE Electron Device Letters
2019-09 | Journal article
DOI: 10.1109/LED.2019.2927378
Contributors: Sungju Choi; Shinyoung Park; Jae-Young Kim; Jihyun Rhee; Hara Kang; Dong Myong Kim; Sung-Jin Choi; Dae Hwan Kim
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Crossref

Effect of Oxygen Content on Current Stress-Induced Instability in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Materials
2019-09-26 | Journal article
DOI: 10.3390/ma12193149
Contributors: Sungju Choi; Jae-Young Kim; Hara Kang; Daehyun Ko; Jihyun Rhee; Sung-Jin Choi; Dong Myong Kim; Dae Hwan Kim
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Crossref
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Method to Extract Interface and Bulk Trap Separately Over the Full Sub-Gap Range in Amorphous InGaZnO Thin-Film Transistors by Using Various Channel Thicknesses

IEEE Electron Device Letters
2019-04 | Journal article
DOI: 10.1109/LED.2019.2898217
Contributors: Sungju Choi; Jae-Young Kim; Jihyun Rhee; Hara Kang; Shinyoung Park; Dong Myong Kim; Sung-Jin Choi; Dae Hwan Kim
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Crossref

AP2.2 - Artificial Synapse and Neuron Combining the Ion-Sensitive Field-Effect Transistor and Memristor

AMA Service GmbH, Von-Münchhausen-Str. 49, 31515 Wunstorf, Germany
2018 | Journal article
DOI: 10.5162/imcs2018/ap2.2
Source: Self-asserted source
Sungju Choi

Degradation on the Current Saturation of Output Characteristics in Amorphous InGaZnO Thin-Film Transistors

IEEE Transactions on Electron Devices
2018-08 | Journal article
DOI: 10.1109/TED.2018.2844862
Contributors: Hye Ri Yu; Jun Tae Jang; Daehyun Ko; Sungju Choi; Geumho Ahn; Sung-Jin Choi; Dong Myong Kim; Dae Hwan Kim
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Crossref

Comprehensive separate extraction of parasitic resistances in MOSFETs considering the gate bias-dependence and the asymmetric overlap length

Microelectronics Reliability
2018-06 | Journal article
DOI: 10.1016/j.microrel.2018.04.011
Part of ISSN: 0026-2714
Source: Self-asserted source
Sungju Choi

Effect of liquid gate bias rising time in pH sensors based on Si nanowire ion sensitive field effect transistors

Solid-State Electronics
2018-02 | Journal article
DOI: 10.1016/j.sse.2017.10.027
Part of ISSN: 0038-1101
Source: Self-asserted source
Sungju Choi

Effects of structure and oxygen flow rate on the photo-response of amorphous IGZO-based photodetector devices

Solid-State Electronics
2018-02 | Journal article
DOI: 10.1016/j.sse.2017.10.028
Part of ISSN: 0038-1101
Source: Self-asserted source
Sungju Choi

The electron trap parameter extraction-based investigation of the relationship between charge trapping and activation energy in IGZO TFTs under positive bias temperature stress

Solid-State Electronics
2018-02 | Journal article
DOI: 10.1016/j.sse.2017.10.024
Part of ISSN: 0038-1101
Source: Self-asserted source
Sungju Choi

Universal model of bias-stress-induced instability in inkjet-printed carbon nanotube networks field-effect transistors

Solid-State Electronics
2018-02 | Journal article
DOI: 10.1016/j.sse.2017.10.022
Part of ISSN: 0038-1101
Source: Self-asserted source
Sungju Choi

Systematic Decomposition of the Positive Bias Stress Instability in Self-Aligned Coplanar InGaZnO Thin-Film Transistors

IEEE Electron Device Letters
2017-05 | Journal article
DOI: 10.1109/led.2017.2681204
Part of ISSN: 0741-3106
Part of ISSN: 1558-0563
Source: Self-asserted source
Sungju Choi

Band-Bending Effect in the Characterization of Subgap Density-of-States in Amorphous TFTs Through Fully Electrical Techniques

IEEE Electron Device Letters
2017-02 | Journal article
DOI: 10.1109/led.2016.2636301
Part of ISSN: 0741-3106
Part of ISSN: 1558-0563
Source: Self-asserted source
Sungju Choi

Experimental decomposition of the positive bias temperature stress-induced instability in self-aligned coplanar InGaZnO thin-film transistors and its modeling based on the multiple stretched-exponential functions

Journal of the Society for Information Display
2017-02 | Journal article
DOI: 10.1002/jsid.531
Part of ISSN: 1071-0922
Source: Self-asserted source
Sungju Choi

Evaluation of interface trap densities and quantum capacitance in carbon nanotube network thin-film transistors

Nanotechnology
2016-07-22 | Journal article
DOI: 10.1088/0957-4484/27/29/295704
Part of ISSN: 0957-4484
Part of ISSN: 1361-6528
Source: Self-asserted source
Sungju Choi

The Effect of Gate and Drain Fields on the Competition Between Donor-Like State Creation and Local Electron Trapping in In–Ga–Zn–O Thin Film Transistors Under Current Stress

IEEE Electron Device Letters
2015-12 | Journal article
DOI: 10.1109/led.2015.2487370
Part of ISSN: 0741-3106
Part of ISSN: 1558-0563
Source: Self-asserted source
Sungju Choi

Modeling and Characterization of the Abnormal Hump in n-Channel Amorphous-InGaZnO Thin-Film Transistors After High Positive Bias Stress

IEEE Electron Device Letters
2015-10 | Journal article
DOI: 10.1109/led.2015.2466232
Part of ISSN: 0741-3106
Part of ISSN: 1558-0563
Source: Self-asserted source
Sungju Choi

Analysis of Instability Mechanism under Simultaneous Positive Gate and Drain Bias Stress in Self-Aligned Top-Gate Amorphous Indium-Zinc-Oxide Thin-Film Transistors

JSTS:Journal of Semiconductor Technology and Science
2015-10-30 | Journal article
DOI: 10.5573/jsts.2015.15.5.526
Part of ISSN: 1598-1657
Source: Self-asserted source
Sungju Choi

Frequency-dependent C-V Characteristic-based Extraction of Interface Trap Density in Normally-off Gate-recessed AlGaN/GaN Heterojunction Field-effect Transistors

JSTS:Journal of Semiconductor Technology and Science
2015-10-30 | Journal article
DOI: 10.5573/jsts.2015.15.5.497
Part of ISSN: 1598-1657
Source: Self-asserted source
Sungju Choi

A Study on the Degradation of In-Ga–Zn-O Thin-Film Transistors Under Current Stress by Local Variations in Density of States and Trapped Charge Distribution

IEEE Electron Device Letters
2015-07 | Journal article
DOI: 10.1109/led.2015.2438333
Part of ISSN: 0741-3106
Part of ISSN: 1558-0563
Source: Self-asserted source
Sungju Choi

Peer review (1 review for 1 publication/grant)

Review activity for ACS applied electronic materials. (1)
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