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ResearcherID: N-1691-2014

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Works (18)

Effect of Strontium Incorporation on the p-Type Conductivity of Cu2O Thin Films Deposited by Metal–Organic Chemical Vapor Deposition

The Journal of Physical Chemistry C
2016 | Journal article
SOURCE-WORK-ID:

1229161309567-15
Contributors: Brochen, Stéphane; Bergerot, Laurent; Favre, Wilfried; Resende, Joao; Jiménez, Carmen; Deschanvres, Jean-Luc; Consonni, Vincent
Source: Self-asserted source
Stephane Brochen via ResearcherID

Growth of nitride-based light emitting diodes with a high-reflectivity distributed Bragg reflector on mesa-patterned silicon substrate

physica status solidi (a)
2015 | Journal article
DOI: 10.1002/pssa.201532303
WOSUID:

WOS:000362952400028
Contributors: Damilano, Benjamin; Brochen, Stéphane; Brault, Julien; Hossain, Tasnia; Réveret, François; Frayssinet, Eric; Chenot, Sébastien; Courville, Aimeric; Cordier, Yvon; Semond, Fabrice
Source: Self-asserted source
Stephane Brochen via ResearcherID

Equivalence of donor and acceptor fits of temperature dependent Hall carrier density and Hall mobility data: Case of ZnO

Journal of Applied Physics
2014 | Journal article
SOURCE-WORK-ID:

1229161309567-14
Contributors: Brochen, Stéphane; Feuillet, Guy; Pernot, Julien
Source: Self-asserted source
Stephane Brochen via ResearcherID

Residual and intentional n-type doping of ZnO thin films grown by metal-organic vapor phase epitaxy on sapphire and ZnO substrates

Journal of Applied Physics
2014 | Journal article
SOURCE-WORK-ID:

1229161309568-9
Contributors: Brochen, Stéphane; Lafossas, Matthieu; Robin, Ivan-Christophe; Ferret, Pierre; Gemain, Frédérique; Pernot, Julien; Feuillet, Guy
Source: Self-asserted source
Stephane Brochen via ResearcherID

Arsenic complexes optical signatures in As-doped HgCdTe

Applied Physics Letters
2013 | Journal article
SOURCE-WORK-ID:

1229161309568-7
Contributors: Gemain, F.; Robin, I. C.; Brochen, S.; Ballet, P.; Gravrand, O.; Feuillet, G.
Source: Self-asserted source
Stephane Brochen via ResearcherID

Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy

Applied Physics Letters
2013 | Journal article
SOURCE-WORK-ID:

1229161309568-2
Contributors: Brochen, Stéphane; Brault, Julien; Chenot, Sébastien; Dussaigne, Amélie; Leroux, Mathieu; Damilano, Benjamin
Source: Self-asserted source
Stephane Brochen via ResearcherID

Optical and Electrical Studies of the Double Acceptor Levels of the Mercury Vacancies in HgCdTe

Journal of electronic materials
2012 | Journal article
DOI: 10.1007/s11664-012-2104-8
WOSUID:

WOS:000308655500032
Contributors: Gemain, F.; Robin, I. C.; Brochen, S.; De Vita, M.; Gravrand, O.; Lusson, A.
Source: Self-asserted source
Stephane Brochen via ResearcherID

Propriétés électriques du ZnO monocristallin

2012 | Supervised student publication
SOURCE-WORK-ID:

1229161309591-11
Contributors: Brochen, Stéphane
Source: Self-asserted source
Stephane Brochen via ResearcherID

Role of deep and shallow donor levels on n-type conductivity of hydrothermal ZnO

Applied Physics Letters
2012 | Journal article
SOURCE-WORK-ID:

1229161309592-6
Contributors: Brochen, Stéphane; Granier, Carole; Feuillet, Guy; Pernot, Julien
Source: Self-asserted source
Stephane Brochen via ResearcherID

Formation and annealing of dislocation loops induced by nitrogen implantation of ZnO

Journal of Applied Physics
2011 | Journal article
SOURCE-WORK-ID:

1229161309592-1
Contributors: Perillat-Merceroz, Guillaume; Gergaud, Patrice; Marotel, Pascal; Brochen, Stephane; Jouneau, Pierre-Henri; Feuillet, Guy
Source: Self-asserted source
Stephane Brochen via ResearcherID

Identification of the double acceptor levels of the mercury vacancies in HgCdTe

Applied Physics Letters
2011 | Journal article
SOURCE-WORK-ID:

1229161309592-8
Contributors: Gemain, F.; Robin, I. C.; De Vita, M.; Brochen, S.; Lusson, A.
Source: Self-asserted source
Stephane Brochen via ResearcherID

Chemically assisted vapour transport for bulk ZnO crystal growth

Journal of Crystal Growth
2010 | Journal article
DOI: 10.1016/j.jcrysgro.2010.08.046
WOSUID:

WOS:000284670400001
Contributors: Santailler, Jean-Louis; Audoin, Claire; Chichignoud, Guy; Obrecht, Rémy; Kaouache, Belkhiri; Marotel, Pascal; Pelenc, Denis; Brochen, Stéphane; Merlin, Jérémy; Bisotto, Isabelle et al.
Source: Self-asserted source
Stephane Brochen via ResearcherID

N+ implantation induced defects and their annealing in bulk ZnO

2010 | Conference paper
SOURCE-WORK-ID:

1229161309593-16
Contributors: Perillat-Merceroz, G.; Feuillet, G.; Jouneau, P. H.; Gergaud, P.; Kaouache, B.; Marotel, P.; Brochen, S.
Source: Self-asserted source
Stephane Brochen via ResearcherID

Residual doping in homoepitaxial zinc oxide layers grown by metal organic vapor phase epitaxy

Applied physics express
2010 | Journal article
SOURCE-WORK-ID:

1229161309593-10
Contributors: Bisotto, Isabelle; Granier, Carole; Brochen, Stéphane; Ribeaud, Alexandre; Ferret, Pierre; Chicot, Gauthier; Rothman, Johan; Pernot, Julien; Feuillet, Guy
Source: Self-asserted source
Stephane Brochen via ResearcherID

Compared optical properties of ZnO heteroepitaxial, homoepitaxial 2D layers and nanowires

Journal of Crystal Growth
2009 | Journal article
DOI: 10.1016/j.jcrysgro.2008.10.078
WOSUID:

WOS:000265659300132
Contributors: Robin, I. C.; Marotel, P.; El-Shaer, A. H.; Petukhov, V.; Bakin, A.; Waag, A.; Lafossas, M.; Garcia, J.; Rosina, M.; Ribeaud, A. et al.
Source: Self-asserted source
Stephane Brochen via ResearcherID

LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett
2008 | Journal article
SOURCE-WORK-ID:

1229161309593-17
Contributors: Robin, I. C.; Ribeaud, A.; Brochen, S.; Feuillet, G.; Ferret, P.; Mariette, H.; Ehrentraut, D.; Lu, Tien-Chang; Kao, Chih-Chiang; Kuo, Hao-Chung et al.
Source: Self-asserted source
Stephane Brochen via ResearcherID

Low residual doping level in homoepitaxially grown ZnO layers

Applied Physics Letters
2008 | Journal article
SOURCE-WORK-ID:

1229161309594-5
Contributors: Robin, I. C.; Ribeaud, A.; Brochen, S.; Feuillet, G.; Ferret, P.; Mariette, H.; Ehrentraut, D.; Fukuda, T.
Source: Self-asserted source
Stephane Brochen via ResearcherID

Issues for Optimized Homoepitaxial Growth of ZnO layers by MOVPE

Journal article
SOURCE-WORK-ID:

1229161309594-18
Contributors: Feuillet, G.; Ferret, P.; Ribeaud, A.; Marotel, P.; Brochen, S.; Bisotto, I.; Chicot, G.; Jonchère, A.; Baudin, F.; Pernot, E. et al.
Source: Self-asserted source
Stephane Brochen via ResearcherID
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