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Works (29)

Unified Scalable Model for HEMT-Based Planar Schottky Diodes

IEEE Transactions on Microwave Theory and Techniques
2025-03 | Journal article
DOI: 10.1109/TMTT.2024.3455558
Contributors: Patrick Umbach; Fabian Thome; Arnulf Leuther; Rüdiger Quay
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Low-Noise Power-Amplifier MMICs for the WR4.3 and WR3.4 Bands in a 35-nm Gate-Length InGaAs mHEMT Technology

IEEE Microwave and Wireless Technology Letters
2024 | Journal article
DOI: 10.1109/LMWT.2024.3388320
Contributors: Fabian Thome; Arnulf Leuther
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A 100–300 GHz Attenuator-Based Ultrawideband Vector Modulator

IEEE Transactions on Terahertz Science and Technology
2024-05 | Journal article
DOI: 10.1109/TTHZ.2024.3371670
Contributors: Konstantin Kuliabin; Cristina Maurette-Blasini; Roger Lozar; Sébastien Chartier; Arnulf Leuther; Rüdiger Quay
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Monolithically Integrated C-Band Low-Noise Amplifiers for Use in Cryogenic Large-Scale RF Systems

IEEE Transactions on Microwave Theory and Techniques
2024-04 | Journal article
DOI: 10.1109/TMTT.2023.3340519
Contributors: Felix Heinz; Fabian Thome; Arnulf Leuther
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Broadband 400 GHz On-Chip Antenna With a Metastructured Ground Plane and Dielectric Resonator

IEEE Transactions on Antennas and Propagation
2022-10 | Journal article
DOI: 10.1109/TAP.2022.3177527
Contributors: Bersant Gashi; Dominik Meier; Laurenz John; Benjamin Baumann; Markus Rosch; Axel Tessmann; Arnulf Leuther; Rudiger Quay
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A 1–170-GHz Distributed Down-Converter MMIC in 35-nm Gate-Length InGaAs mHEMT Technology

IEEE Microwave and Wireless Components Letters
2022-06 | Journal article
DOI: 10.1109/LMWC.2022.3162762
Contributors: Fabian Thome; Sandrine Wagner; Arnulf Leuther
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High-Gain 670-GHz Amplifier Circuits in InGaAs-on-Insulator HEMT Technology

IEEE Microwave and Wireless Components Letters
2022-06 | Journal article
DOI: 10.1109/LMWC.2022.3160093
Contributors: Laurenz John; Axel Tessmann; Arnulf Leuther; Thomas Merkle; Hermann Massler; Sebastien Chartier
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A 67–116-GHz Cryogenic Low-Noise Amplifier in a 50-nm InGaAs Metamorphic HEMT Technology

IEEE Microwave and Wireless Components Letters
2022-05 | Journal article
DOI: 10.1109/LMWC.2021.3134462
Contributors: Fabian Thome; Frank Schafer; Sener Turk; Pavel Yagoubov; Arnulf Leuther
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670-GHz Cascode Circuits Based on InGaAs Metamorphic High-Electron-Mobility Transistors

IEEE Transactions on Terahertz Science and Technology
2022-03 | Journal article
DOI: 10.1109/TTHZ.2021.3136335
Contributors: Laurenz John; Axel Tessmann; Arnulf Leuther; Hermann Massler
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A Scalable Small-Signal and Noise Model for High-Electron-Mobility Transistors Working Down to Cryogenic Temperatures

IEEE Transactions on Microwave Theory and Techniques
2022-02 | Journal article
DOI: 10.1109/TMTT.2021.3123647
Contributors: Felix Heinz; Fabian Thome; Dirk Schwantuschke; Arnulf Leuther; Oliver Ambacher
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Broadband 400-GHz InGaAs mHEMT Transmitter and Receiver S-MMICs

IEEE Transactions on Terahertz Science and Technology
2021-11 | Journal article
DOI: 10.1109/TTHZ.2021.3099064
Contributors: Bersant Gashi; Laurenz John; Dominik Meier; Markus Rosch; Sandrine Wagner; Axel Tessmann; Arnulf Leuther; Oliver Ambacher; Rudiger Quay
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First Demonstration of Distributed Amplifier MMICs With More Than 300-GHz Bandwidth

IEEE Journal of Solid-State Circuits
2021-09 | Journal article
DOI: 10.1109/JSSC.2021.3052952
Contributors: Fabian Thome; Arnulf Leuther
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A 50-nm Gate-Length Metamorphic HEMT Technology Optimized for Cryogenic Ultra-Low-Noise Operation

IEEE Transactions on Microwave Theory and Techniques
2021-08 | Journal article
DOI: 10.1109/TMTT.2021.3081710
Contributors: Felix Heinz; Fabian Thome; Arnulf Leuther; Oliver Ambacher
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A 75–305-GHz Power Amplifier MMIC With 10–14.9-dBm Pout in a 35-nm InGaAs mHEMT Technology

IEEE Microwave and Wireless Components Letters
2021-06 | Journal article
DOI: 10.1109/LMWC.2021.3058101
Contributors: Fabian Thome; Arnulf Leuther
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H-Band Quartz-Silicon Leaky-Wave Lens With Air-Bridge Interconnect to GaAs Front-End

IEEE Transactions on Terahertz Science and Technology
2021-05 | Journal article
DOI: 10.1109/TTHZ.2021.3049640
Contributors: Marta Arias Campo; Katarzyna Holc; Rainer Weber; Carmine De Martino; Marco Spirito; Arnulf Leuther; Simona Bruni; Nuria Llombart
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Frequency Multiplier and Mixer MMICs Based on a Metamorphic HEMT Technology Including Schottky Diodes

IEEE Access
2020 | Journal article
DOI: 10.1109/ACCESS.2020.2965823
Contributors: Fabian Thome; Erdin Ture; Robert Iannucci; Arnulf Leuther; Frank Schafer; Alessandro Navarrini; Patrice Serres
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InGaAs MOSHEMT W-Band LNAs on Silicon and Gallium Arsenide Substrates

IEEE Microwave and Wireless Components Letters
2020-11 | Journal article
DOI: 10.1109/LMWC.2020.3025674
Contributors: Fabian Thome; Felix Heinz; Arnulf Leuther
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Broadband 300-GHz Power Amplifier MMICs in InGaAs mHEMT Technology

IEEE Transactions on Terahertz Science and Technology
2020-05 | Journal article
DOI: 10.1109/TTHZ.2020.2965808
Contributors: Laurenz John; Axel Tessmann; Arnulf Leuther; Philipp Neininger; Thomas Merkle; Thomas Zwick
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Low-Loss Millimeter-Wave SPDT Switch MMICs in a Metamorphic HEMT Technology

IEEE Microwave and Wireless Components Letters
2020-02 | Journal article
DOI: 10.1109/LMWC.2019.2958209
Contributors: Fabian Thome; Arnulf Leuther; Oliver Ambacher
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20-nm In0.8Ga0.2As MOSHEMT MMIC Technology on Silicon

IEEE Journal of Solid-State Circuits
2019-09 | Journal article
DOI: 10.1109/JSSC.2019.2915161
Contributors: Axel Tessmann; Arnulf Leuther; Felix Heinz; Frank Bernhardt; Laurenz John; Hermann Massler; Lukas Czornomaz; Thomas Merkle
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Broadband 240-GHz Radar for Non-Destructive Testing of Composite Materials

IEEE Journal of Solid-State Circuits
2019-09 | Journal article
DOI: 10.1109/JSSC.2019.2921154
Contributors: Thomas Merkle; Dominik Meier; Sandrine Wagner; Axel Tessmann; Michael Kuri; Hermann Massler; Arnulf Leuther
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A Transmitter System-in-Package at 300 GHz With an Off-Chip Antenna and GaAs-Based MMICs

IEEE Transactions on Terahertz Science and Technology
2019-05 | Journal article
DOI: 10.1109/TTHZ.2019.2910511
Contributors: Alexander Dyck; Markus Rosch; Axel Tessmann; Arnulf Leuther; Michael Kuri; Sandrine Wagner; Bersant Gashi; Jochen Schafer; Oliver Ambacher
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Crossref

A 280–310 GHz InAlAs/InGaAs mHEMT Power Amplifier MMIC with 6.7–8.3 dBm Output Power

IEEE Microwave and Wireless Components Letters
2019-02 | Journal article
DOI: 10.1109/LMWC.2018.2885916
Contributors: Laurenz John; Philipp Neininger; Christian Friesicke; Axel Tessmann; Arnulf Leuther; Michael Schlechtweg; Thomas Zwick
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A $G$ -Band Broadband Balanced Power Amplifier Module Based on Cascode mHEMTs

IEEE Microwave and Wireless Components Letters
2018-10 | Journal article
DOI: 10.1109/LMWC.2018.2862646
Contributors: B. Amado-Rey; Y. Campos-Roca; C. Friesicke; F. van Raay; H. Massler; A. Leuther; O. Ambacher
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A WR3-Band 2-bit Phase Shifter Based on Active SPDT Switches

IEEE Microwave and Wireless Components Letters
2018-09 | Journal article
DOI: 10.1109/LMWC.2018.2853085
Contributors: D. Muller; P. Pahl; A. Tessmann; A. Leuther; T. Zwick; I. Kallfass
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Analysis and Development of Submillimeter-Wave Stacked-FET Power Amplifier MMICs in 35-nm mHEMT Technology

IEEE Transactions on Terahertz Science and Technology
2018-05 | Journal article
DOI: 10.1109/TTHZ.2018.2801562
Contributors: Ana Belen Amado-Rey; Yolanda Campos-Roca; Friedbert van Raay; Christian Friesicke; Sandrine Wagner; Hermann Massler; Arnulf Leuther; Oliver Ambacher
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Bandwidth Optimization Method for Reflective-Type Phase Shifters

IEEE Transactions on Microwave Theory and Techniques
2018-04 | Journal article
DOI: 10.1109/TMTT.2017.2779156
Contributors: Daniel Muller; Alexander Haag; Akanksha Bhutani; Axel Tessmann; Arnulf Leuther; Thomas Zwick; Ingmar Kallfass
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Broadband High-Power W-Band Amplifier MMICs Based on Stacked-HEMT Unit Cells

IEEE Transactions on Microwave Theory and Techniques
2018-03 | Journal article
DOI: 10.1109/TMTT.2017.2772809
Contributors: Fabian Thome; Arnulf Leuther; Michael Schlechtweg; Oliver Ambacher
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Efficiency Optimized Distributed Transformers for Broadband Monolithic Millimeter-Wave Integrated Power Amplifier Circuits

IEEE Transactions on Microwave Theory and Techniques
2017-12 | Journal article
DOI: 10.1109/TMTT.2017.2729514
Contributors: Philipp Pahl; Sandrine Wagner; Hermann Massler; Arnulf Leuther; Ingmar Kallfass; Thomas Zwick
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