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Works (6)

Ultrathin Native Oxide by Barrier Layer Oxidation as Gate Dielectric for AlInN/GaN MIS-HEMTs

2020 5th IEEE International Conference on Emerging Electronics (ICEE)
2020-11-26 | Conference paper
DOI: 10.1109/icee50728.2020.9776963
Source: Self-asserted source
Bhuvnesh Kushwah

Low Temperature and High Pressure Oxidized Al2O3 as Gate Dielectric for AlInN/GaN MIS-HEMTs

IEEE Transactions on Device and Materials Reliability
2020-09 | Journal article
DOI: 10.1109/TDMR.2020.3016394
Contributors: Srikanth Kanaga; Gourab Dutta; Bhuvnesh Kushwah; Nandita DasGupta; Amitava DasGupta
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Crossref

AlInN/GaN MIS-HEMTs with High Pressure Oxidized Aluminium as Gate Dielectric

2018 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)
2018 | Conference paper
DOI: 10.1109/CONECCT.2018.8482382
Source: Self-asserted source
Bhuvnesh Kushwah

Study of interface traps for GaN-based MIS-HEMTs with high pressure oxidized aluminium as gate dielectric

2018 4th IEEE International Conference on Emerging Electronics (ICEE)
2018 | Conference paper
DOI: 10.1109/ICEE44586.2018.8937856
Source: Self-asserted source
Bhuvnesh Kushwah

Low Temperature - High Pressure Oxidized Al2O3 as Gate Dielectric for AlInN/GaN MIS-HEMTs

International Workshop on Nitride Semiconductors 2018 (IWN2018)
2018-08 | Conference paper
Source: Self-asserted source
Bhuvnesh Kushwah

High Pressure Oxidized Aluminium as Gate Dielectric for GaN-based MIS-HEMTs

International Workshop on The Physics of Semiconductor Devices (IWPSD 2017)
2017-12 | Conference paper
Source: Self-asserted source
Bhuvnesh Kushwah
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