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Works (14)

Ovonic Threshold Switching for Ultralow Energy Physical Reservoir Computing

IEEE Transactions on Electron Devices
2025 | Journal article
DOI: 10.1109/TED.2025.3533390
Contributors: Y. Y. Guo; R. Degraeve; T. Ravsher; D. Garbin; P. Roussel; G. S. Kar; E. Bury; D. Linten; I. Verbauwhede
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Unveiling the Vulnerability of Oxide-Breakdown-Based PUF

IEEE Electron Device Letters
2024 | Journal article
DOI: 10.1109/LED.2024.3369860
Contributors: P. Saraza-Canflanca; F. Fodor; J. Diaz-Fortuny; B. Gierlichs; R. Degraeve; B. Kaczer; I. Verbauwhede; E. Bury
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Evidence of Heat‐Assisted Atomic Migration in GeSe Self‐Selecting Memory at High Operating Current Density

physica status solidi (RRL) – Rapid Research Letters
2024-01-19 | Journal article
DOI: 10.1002/pssr.202300415
Contributors: Taras Ravsher; Daniele Garbin; Andrea Fantini; Robin Degraeve; Sergiu Clima; Gabriele Luca Donadio; Shreya Kundu; Hubert Hody; Wouter Devulder; Goedele Potoms et al.
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A HydroDynamic Model for Trap-Assisted Tunneling Conduction in Ovonic Devices

IEEE Transactions on Electron Devices
2023 | Journal article
DOI: 10.1109/TED.2023.3242229
Contributors: F. Buscemi; E. Piccinini; L. Vandelli; F. Nardi; A. Padovani; B. Kaczer; D. Garbin; S. Clima; R. Degraeve; G. S. Kar et al.
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Analytical Markov Model to Calculate TDDB at Any Voltage and Temperature Stress Condition

IEEE Transactions on Electron Devices
2023 | Journal article
DOI: 10.1109/TED.2023.3326430
Contributors: Andrea Vici; Robin Degraeve; Jacopo Franco; Ben Kaczer; Philippe J. Roussel; Ingrid De Wolf
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Line-to-Line TDDB Modeling: LER Specs for Sub-20-nm Pitch Interconnects

IEEE Transactions on Electron Devices
2023 | Journal article
DOI: 10.1109/TED.2023.3287168
Contributors: Yu Fang; I. Ciofi; Ph. J. Roussel; A. Lesniewska; R. Degraeve; I. De Wolf; K. Croes
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Fault Attack Investigation on TaOx Resistive-RAM for Cyber Secure Application

IEEE Transactions on Electron Devices
2023-08 | Journal article
DOI: 10.1109/TED.2023.3289477
Contributors: Ankit Kumar; Robin Degraeve; Arthur Beckers; Andrea Fantini; Ingrid Verbauwhede; Dimitri Linten; Gouri S. Kar
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Benchmarking of Machine Learning Methods for Multiscale Thermal Simulation of Integrated Circuits

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
2023-07 | Journal article
DOI: 10.1109/TCAD.2022.3216549
Contributors: David Coenen; Herman Oprins; Robin Degraeve; Ingrid De Wolf
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Self-Rectifying Memory Cell Based on SiGeAsSe Ovonic Threshold Switch

IEEE Transactions on Electron Devices
2023-05 | Journal article
DOI: 10.1109/TED.2023.3252491
Contributors: Taras Ravsher; Daniele Garbin; Andrea Fantini; Robin Degraeve; Sergiu Clima; Gabriele Luca Donadio; Shreya Kundu; Hubert Hody; Wouter Devulder; Jan Van Houdt et al.
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New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors

IEEE Transactions on Electron Devices
2023-02 | Journal article
DOI: 10.1109/TED.2022.3231233
Contributors: Zeyu Hu; Weidong Zhang; Robin Degraeve; Daniele Garbin; Zheng Chai; Nishant Saxena; Pedro Freitas; Andrea Fantini; Taras Ravsher; Sergiu Clima et al.
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Towards Complete Recovery of Circuit Degradation by Annealing With On-Chip Heaters

IEEE Electron Device Letters
2023-02 | Journal article
DOI: 10.1109/LED.2022.3229137
Contributors: J. Diaz-Fortuny; P. Saraza-Canflanca; M. Lofrano; E. Bury; R. Degraeve; B. Kaczer
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Impact of Relaxation on the Performance of GeSe True Random Number Generator Based on Ovonic Threshold Switching

IEEE Electron Device Letters
2022-07 | Journal article
DOI: 10.1109/LED.2022.3179590
Contributors: Xue Zhou; Zeyu Hu; Zheng Chai; Weidong Zhang; Sergiu Clima; Robin Degraeve; Jian Fu Zhang; Andrea Fantini; Daniele Garbin; Romain Delhougne et al.
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Cycling Induced Metastable Degradation in GeSe Ovonic Threshold Switching Selector

IEEE Electron Device Letters
2021-10 | Journal article
DOI: 10.1109/LED.2021.3109582
Contributors: Zheng Chai; Weidong Zhang; Sergiu Clima; Firas Hatem; Robin Degraeve; Qihui Diao; Jian Fu Zhang; Pedro Freitas; John Marsland; Andrea Fantini et al.
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Hot-Electron-Induced Punch-Through (HEIP) Effect in p-MOSFET Enhanced by Mechanical Stress

IEEE Electron Device Letters
2021-10 | Journal article
DOI: 10.1109/LED.2021.3104885
Contributors: Kookjin Lee; Ben Kaczer; Anastasiia Kruv; Mario Gonzalez; Robin Degraeve; Stanislav Tyaginov; Alexander Grill; Ingrid De Wolf
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