Personal information

Biography

Kiyoteru Kobayashi received the B.E. and M.E. degrees in Applied Physics, and the Doctor of Engineering, all from Nagoya University, Nagoya, Japan, in 1981, 1983, and 1997, respectively.
In 1983, he joined Mitsubishi Electric Corporation, Hyogo, Japan. He studied and developed thin film formation technologies including low-pressure chemical vapor deposition and thermal oxidation of silicon there. He also studied the mechanisms of dielectric breakdown and charge trapping of SiO2 and Si3N4 thin films for applications in semiconductor memories and SoC devices. He was also engaged research and development on high-density flash memory.
In 2003, he joined Renesas Technology Corporation and served as a Manager of Back-End Thin Film Technology Development Group, where he developed STI, salicide and interconnect technologies for advanced CMOS devices.
In 2005, he joined Tokai University, Kanagawa, Japan, as a Full-time Professor. During 2019 to 2022, he served as the Chairperson of the Department of Electrical and Electronic Engineering, School of Engineering, there. He was engaged studies on experimental characterization of point defects and modeling of the charge trapping phenomena in dielectric thin films for nonvolatile memory applications. He served as the supervisor of 27 graduate students.
In 2024, he jointed ESCO, Ltd., Tokyo, JAPAN. His current research activities include thin film analysis using thermal desorption spectroscopy (TDS).
He is the author and co-author of approximately 100 articles in journals and conferences. He is the author of a textbook on Semiconductor Device Engineering for Integrated Circuits and is also the author of two book chapters in his field of expertise.
He served as the Principal Investigator and obtained the Grants-in-Aid for Scientific Research in Japan 3 times during 2009 to 2012, 2014 to 2017 and 2018 to 2021.
Dr. Kobayashi has served as the Chairperson of the Technical Program Committee of the Symposium on Semiconductors and Integrated Circuits Technology during 2017 to 2022. During 2019 to 2020, he was an organizer of Nonvolatile Memories and Artificial Neural Networks Symposium of the Electrochemical Society Meeting (ECS Meeting). During 2011 to 2017, he was an organizer of Nonvolatile Memories Symposiums of the ECS Meetings. He was an International Technical Program Committee member of the International Symposium on Control of Semiconductor Interfaces (ISCSI) during 2012 to 2013, 2015 to 2016, and 2021 to 2022.
He is currently the Vice-Chairperson of the Electronic Materials Committee of the Electrochemical Society of Japan. He is also a member of the Japan Society of Applied Physics and a member of the Institute of Electronics, Information and Communication Engineers.

Activities

Employment (2)

ESCO, Ltd.: Musashino, Tokyo, JP

2024-04-01 to present | General Manager (Research Laboratory)
Employment
Source: Self-asserted source
Kiyoteru Kobayashi

Tokai University: Hiratsuka, Kanagawa, JP

2005-04-01 to 2024-03-31 | Professor (School of Engineering)
Employment
Source: Self-asserted source
Kiyoteru Kobayashi

Education and qualifications (1)

Nagoya University: Nagoya, JP

Ph. D.
Education
Source: Self-asserted source
Kiyoteru Kobayashi

Professional activities (3)

The Electrochemical Society of Japan: Chiyoda, JP

Membership
Source: Self-asserted source
Kiyoteru Kobayashi

Japan Society of Applied Physics: Bunkyo, JP

Membership
Source: Self-asserted source
Kiyoteru Kobayashi

Institute of Electronics, Information and Communication Engineers: Tokyo, JP

Membership
Source: Self-asserted source
Kiyoteru Kobayashi

Funding (3)

Control of the energy distribution of trap levels in the charge trapping films

2018-04-01 to 2021-03-31 | Grant
Japan Society for the Promotion of Science (Tokyo, JP)
GRANT_NUMBER: 18K04244
Source: Self-asserted source
Kiyoteru Kobayashi via DimensionsWizard

Application of silicon carbonitride films to the charge trapping nonvolatile memories

2014-04-01 to 2017-03-31 | Grant
Japan Society for the Promotion of Science (Tokyo, JP)
GRANT_NUMBER: 26420280
Source: Self-asserted source
Kiyoteru Kobayashi via DimensionsWizard

Studies on nature of defect centers and charge trapping characteristics of silicon nitride films and low dielectric constant dielectric films for the nonvolatile memory applications

2009-01-01 to 2011-12-31 | Grant
Japan Society for the Promotion of Science (Tokyo, JP)
GRANT_NUMBER: 21560336
Source: Self-asserted source
Kiyoteru Kobayashi via DimensionsWizard

Works (50 of 76)

Items per page:
Page 1 of 2

Influence of high-temperature thermal annealing on paramagnetic point defects in silicon-rich silicon nitride films formed in a single-wafer-type low-pressure chemical vapor deposition reactor

Journal of Vacuum Science & Technology A
2024-09-01 | Journal article
Contributors: Kiyoteru Kobayashi; Ryo Miyauchi; Kenshi Kimoto
Source: check_circle
Crossref

Electrical analysis of energy depth of electron trap states in silicon nitride films for charge-trap flash memory application

2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC)
2021-12-12 | Journal article
Contributors: Kiyoteru Kobayashi; Soichiro Nakagawa
Source: Self-asserted source
Kiyoteru Kobayashi
grade
Preferred source (of 2)‎

First-Principles Study of Defect Levels Caused by Transition Metal Atoms in Silicon Nitride for Non-Volatile Memory Applications

ECS Meeting Abstracts
2020-11-23 | Journal article
Contributors: Rahul Agrawal; Kiyoteru Kobayashi
Source: check_circle
Crossref

First-Principles Study of Defect Levels Caused by Transition Metal Atoms in Silicon Nitride for Non-Volatile Memory Applications

ECS Transactions
2020-09-08 | Journal article
Contributors: Rahul Agrawal; Kiyoteru Kobayashi
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Hole trapping capability of silicon carbonitride charge trap layers

The European Physical Journal Applied Physics
2020-07 | Journal article | Author
Part of ISSN: 1286-0042
Part of ISSN: 1286-0050
Contributors: Kiyoteru Kobayashi; Hiroshi Mino
Source: Self-asserted source
Kiyoteru Kobayashi
grade
Preferred source (of 3)‎

Experimental extraction of the charge centroid of holes trapped in metal-oxide-nitride-oxide-semiconductor memories

ECS Transactions
2018 | Conference paper
EID:

2-s2.0-85058293463

Part of ISSN: 19385862 19386737
Contributors: Mino, H.; Kobayashi, K.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Extraction of Energy Distribution of Electrons Trapped in Silicon Carbonitride (SiCN) Charge Trapping Films

IEICE Transactions on Electronics
2017 | Journal article
Part of ISSN: 0916-8524
Part of ISSN: 1745-1353
Contributors: Sheikh Rashel Al AHMED; Kiyoteru KOBAYASHI
Source: Self-asserted source
Kiyoteru Kobayashi
grade
Preferred source (of 2)‎

Hole trapping characteristics of silicon carbonitride (SiCN)-based charge trapping memories evaluated by the constant-current carrier injection method

Materials Science in Semiconductor Processing
2017-11 | Journal article
Part of ISSN: 1369-8001
Contributors: Sheikh Rashel Al Ahmed; Kaihei Kato; Kiyoteru Kobayashi
Source: Self-asserted source
Kiyoteru Kobayashi
grade
Preferred source (of 2)‎

Evaluation of hole trapping characteristics in MONOS-type memories using the constant-current carrier injection method

ECS Transactions
2016 | Conference paper
EID:

2-s2.0-85025124092

Part of ISSN: 19385862 19386737
Contributors: Kato, K.; Ahmed, S.R.A.; Kobayashi, K.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Experimental extraction of the charge centroid in SiCN-based charge trapping memories using the constant-current carrier injection method

ECS Transactions
2016 | Conference paper
EID:

2-s2.0-85025174382

Part of ISSN: 19385862 19386737
Contributors: Ahmed, S.R.A.; Kato, K.; Kobayashi, K.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Characterization of low-dielectric constant silicon carbonitride (SiCN) dielectric films for charge trapping nonvolatile memories

ECS Transactions
2015 | Conference paper
EID:

2-s2.0-84945912391

Part of ISSN: 19385862 19386737
Contributors: Ahmed, S.R.A.; Naito, S.; Kobayashi, K.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Charge trapping properties of silicon carbonitride storage layers for nonvolatile memories

ECS Transactions
2014 | Conference paper
EID:

2-s2.0-84921298946

Part of ISSN: 19386737 19385862
Contributors: Kobayashi, K.; Naito, S.; Tanaka, S.; Ito, Y.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Effect of metal work function on conduction current in silicon nitride films after exposure to ultraviolet illumination

Journal of the Vacuum Society of Japan
2014 | Journal article
EID:

2-s2.0-84901752156

Part of ISSN: 18824749 18822398
Contributors: Suzuki, A.; Kobayashi, K.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Thermal stability of paramagnetic defect centers in amorphous silicon nitride films

Japanese Journal of Applied Physics
2014 | Journal article
EID:

2-s2.0-84903149890

Part of ISSN: 13474065 00214922
Contributors: Kobayashi, K.; Suzuki, A.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Thermal annealing effect on ultraviolet-light-induced leakage current in low-pressure chemical vapor deposited silicon nitride films

Thin Solid Films
2014-01 | Journal article
Part of ISSN: 0040-6090
Contributors: Kiyoteru Kobayashi; Aran Suzuki; Kokichi Ishikawa
Source: Self-asserted source
Kiyoteru Kobayashi
grade
Preferred source (of 2)‎

Low-dielectric constant SiCN charge trapping layer for nonvolatile memory applications

ECS Transactions
2013 | Conference paper
EID:

2-s2.0-84904901627

Part of ISSN: 19386737 19385862
Contributors: Kobayashi, K.; Naito, S.; Nakiri, S.; Ito, Y.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Conduction currents and paramagnetic defect centers in UV-illuminated silicon nitride films

ECS Transactions
2011 | Conference paper
EID:

2-s2.0-84857339823

Part of ISSN: 19386737 19385862
Contributors: Kobayashi, K.; Ishikawa, K.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Effectiveness of dimethyl carbonate and dipivaloyl methane chemicals for internal repair of plasma-damaged low-k films

Japanese Journal of Applied Physics
2011 | Journal article
EID:

2-s2.0-79957490903

Part of ISSN: 00214922 13474065
Contributors: Nagano, S.; Sakoda, K.; Hasaka, S.; Kobayashi, K.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Ultraviolet light-induced conduction current in silicon nitride films

Japanese Journal of Applied Physics
2011 | Journal article
EID:

2-s2.0-79953109910

Part of ISSN: 00214922 13474065
Contributors: Kobayashi, K.; Ishikawa, K.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Internal repair for plasma damaged low-k films by methylating chemical vapor

Advanced Metallization Conference (AMC)
2010 | Conference paper
EID:

2-s2.0-79957654006

Part of ISSN: 15401766
Contributors: Nagano, S.; Sakoda, K.; Hasaka, S.; Kobayashi, K.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Oxygen distribution in nickel silicide films analyzed by time-of-flight secondary ion mass spectrometry

Micron
2010 | Journal article
EID:

2-s2.0-77954384794

Part of ISSN: 09684328
Contributors: Kobayashi, K.; Watanabe, H.; Maekawa, K.; Kashihara, K.; Yamaguchi, T.; Asai, K.; Hirose, Y.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Photoinduced leakage currents in silicon carbon nitride dielectrics for copper diffusion barriers

Japanese Journal of Applied Physics
2010 | Journal article
EID:

2-s2.0-77953173315

Part of ISSN: 00214922 13474065
Contributors: Kobayashi, K.; Ide, T.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Photoinduced paramagnetic defects and negative charge in SiCN dielectrics for copper diffusion barriers

Thin Solid Films
2010 | Journal article
EID:

2-s2.0-77649218367

Part of ISSN: 00406090
Contributors: Kobayashi, K.; Ide, T.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Characterization of defects generated in SiCN dielectrics for copper diffusion barriers

Advanced Metallization Conference (AMC)
2009 | Conference paper
EID:

2-s2.0-70349954658

Part of ISSN: 15401766
Contributors: Kobayashi, K.; Ide, T.; Takahashi, Y.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Leakage current and paramagnetic defects in SiCN dielectrics for copper diffusion barriers

Applied Surface Science
2008 | Journal article
EID:

2-s2.0-45049083883

Part of ISSN: 01694332
Contributors: Kobayashi, K.; Yokoyama, H.; Endoh, M.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Oxygen distribution in nickel silicide films analyzed by time-of-flight secondary ion mass spectrometry

Advanced Metallization Conference (AMC)
2008 | Conference paper
EID:

2-s2.0-55349145605

Part of ISSN: 15401766
Contributors: Kobayashi, K.; Watanabe, H.; Kuwabara, H.; Maekawa, K.; Kashihara, K.; Yamaguchi, T.; Asai, K.; Honda, K.; Hirose, Y.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Suppression of hydrogen-ion drift into underlying layers using plasma deposited silicon oxynitride film during high-density plasma chemical vapor deposition

Thin Solid Films
2007 | Journal article
EID:

2-s2.0-33947103508

Part of ISSN: 00406090
Contributors: Murata, T.; Yamaguchi, T.; Sawada, M.; Shimizu, S.; Asai, K.; Kobayashi, K.; Miyatake, H.; Yoneda, M.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Depth profile analysis of nickel silicide films using time-of-flight secondary ion mass spectrometry (TOF-SIMS)

Semiconductor Technology, ISTC2007 - Proceedings of the 6th International Conference on Semiconductor Technology
2006 | Conference paper
EID:

2-s2.0-58449115729

Contributors: Kobayashi, K.; Aoyagi, H.; Kuwabara, H.; Maekawa, K.; Kashihara, K.; Yamaguchi, T.; Asai, K.; Honda, K.; Hirose, Y.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Effects of fluorine stability and stress in SiOF films on film adhesion

Journal of the Electrochemical Society
2005 | Journal article
EID:

2-s2.0-14744269096

Part of ISSN: 00134651
Contributors: Fujii, T.; Asai, K.; Sawada, M.; Sakurai, K.; Kobayashi, K.; Yoneda, M.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Hydrogen ion drift into underlying oxides by rf bias during high-density plasma chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
2005 | Journal article
EID:

2-s2.0-31544468661

Part of ISSN: 00214922 13474065
Contributors: Yamaguchi, T.; Sawada, M.; Asai, K.; Kobayashi, K.; Yoneda, M.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Investigation of the divided deposition method of TiN thin films for metal-insulator-metal capacitor applications

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
2005 | Journal article
EID:

2-s2.0-31544454682

Part of ISSN: 00214922 13474065
Contributors: Okudaira, T.; Hayashi, T.; Sakashita, S.; Tsuchimoto, J.; Kobayashi, K.; Yoneda, M.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Novel shallow trench isolation process from viewpoint of total strain process design for 45 nm node devices and beyond

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
2005 | Journal article
EID:

2-s2.0-21244505803

Part of ISSN: 00214922
Contributors: Ishibashi, M.; Horita, K.; Sawada, M.; Kitazawa, M.; Igarashi, M.; Kuroi, T.; Eimori, T.; Kobayashi, K.; Inuishi, M.; Ohji, Y.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

A new barrier metal structure with ALD-TaN for highly reliable Cu dual damascene interconnects

Advanced Metallization Conference (AMC)
2004 | Conference paper
EID:

2-s2.0-23844508486

Part of ISSN: 15401766
Contributors: Mori, K.; Maekawa, K.; Kobayashi, K.; Yoneda, M.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Improvement in parametric and reliability performance of 90nm dual-damascene interconnects using Ar+ punch-thru PVD Ta(N) barrier process

Advanced Metallization Conference (AMC)
2004 | Conference paper
EID:

2-s2.0-23844535453

Part of ISSN: 15401766
Contributors: Kumar, N.; Chu, S.; Diehl, D.L.; Tanimoto, T.; Ohkura, A.; Maekawa, K.; Mori, K.; Kobayashi, K.; Yoneda, M.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Improvement in reliability of Cu dual-damascene interconnects using Cu-al alloy seed

Advanced Metallization Conference (AMC)
2004 | Conference paper
EID:

2-s2.0-23844542064

Part of ISSN: 15401766
Contributors: Maekawa, K.; Mori, K.; Kobayashi, K.; Kumar, N.; Chu, S.; Chen, S.; Lai, G.; Diehl, D.; Yoneda, M.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Photosensing properties of interdigitated metal-semiconductor-metal structures with undepleted region

Solid-State Electronics
2003 | Journal article
EID:

2-s2.0-0038587746

Part of ISSN: 00381101
Contributors: Masui, T.; Khunkhao, S.; Kobayashi, K.; Niemcharoen, S.; Supadech, S.; Sato, K.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Intrinsic and extrinsic photoresponse of Mo/n-Si/Mo structures with wide electrode gap

Solid-State Electronics
2002 | Journal article
EID:

2-s2.0-0036721658

Part of ISSN: 00381101
Contributors: Kobayashi, K.; Niemcharoen, S.; Supadech, S.; Yasumura, Y.; Sato, K.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

A paste type negative electrode using a MmNi<sub>5</sub> based hydrogen storage alloy for a nickel-metal hydride (Ni-MH) battery

International Journal of Hydrogen Energy
2001 | Journal article
EID:

2-s2.0-0035398757

Part of ISSN: 03603199
Contributors: Uchida, H.; Matsumoto, T.; Watanabe, S.; Kobayashi, K.; Hoshino, H.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Excess currents induced by hot hole injection and FN electron injection in thin SiO<sub>2</sub> films

IEEE Transactions on Electron Devices
2001 | Journal article
EID:

2-s2.0-0035340857

Part of ISSN: 00189383
Contributors: Teramoto, A.; Kobayashi, K.; Ohno, Y.; Shigetomi, A.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Time-dependent dielectric breakdown of SiO<sub>2</sub> films in a wide electric field range

Microelectronics Reliability
2001 | Journal article
EID:

2-s2.0-0035151281

Part of ISSN: 00262714
Contributors: Teramoto, A.; Umeda, H.; Azamawari, K.; Kobayashi, K.; Shiga, K.; Komori, J.; Ohno, Y.; Shigetomi, A.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Impact of thermal nitridation on microscopic stress-induced leakage current in sub-10-nm silicon dioxides

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
2000 | Journal article
EID:

2-s2.0-19644382188

Part of ISSN: 00214922
Contributors: Ogata, T.; Inoue, M.; Nakamura, T.; Tsuji, N.; Kobayashi, K.; Kawase, K.; Kurokawa, H.; Kaneoka, T.; Wake, S.; Arima, H.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

256-Mb multilevel flash memory with 2-MB/s program rate for mass storage applications

IEEE Journal of Solid-State Circuits
1999 | Journal article
EID:

2-s2.0-0033221598

Part of ISSN: 00189200
Contributors: Nozoe, A.; Kotani, H.; Tsujikawa, T.; Yoshida, K.; Furusawa, K.; Kato, M.; Nishimoto, T.; Kume, H.; Kurata, H.; Miyamoto, N. et al.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Angle resolved X-ray photoelectron spectroscopic study of ultrathin oxynitrides

Materials Science in Semiconductor Processing
1999 | Journal article
EID:

2-s2.0-0005949181

Part of ISSN: 13698001
Contributors: Kawase, K.; Tanimura, J.; Kurokawa, H.; Kobayashi, K.; Teramoto, A.; Ogata, T.; Inoue, M.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Origin of positive charge generated in thin SiO<sub>2</sub> films during high-field electrical stress

IEEE Transactions on Electron Devices
1999 | Journal article
EID:

2-s2.0-0032664320

Part of ISSN: 00189383
Contributors: Kobayashi, K.; Teramoto, A.; Miyoshi, H.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Study of oxide breakdown under very low electric field

Annual Proceedings - Reliability Physics (Symposium)
1999 | Conference paper
EID:

2-s2.0-0032685515

Part of ISSN: 00999512
Contributors: Teramoto, A.; Umeda, H.; Azamawari, K.; Kobayashi, K.; Shiga, K.; Komori, J.; Ohno, Y.; Miyoshi, H.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Highly reliable SiO<sub>2</sub> films formed by UV-O<sub>2</sub> oxidation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
1998 | Journal article
EID:

2-s2.0-0141751206

Part of ISSN: 00214922
Contributors: Teramoto, A.; Kobayashi, K.; Ohno, Y.; Hirayama, M.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Impact of nitridation engineering on microscopic SILC characteristics of sub-10-nm tunnel dielectrics

Technical Digest - International Electron Devices Meeting
1998 | Conference paper
EID:

2-s2.0-0032255097

Part of ISSN: 01631918
Contributors: Ogata, T.; Inoue, M.; Nakamura, T.; Tsuji, N.; Kobayashi, K.; Kawase, K.; Kurokawa, H.; Kaneoka, T.; Ohno, Y.; Miyoshi, H.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Impact of organic contaminants from the environment on electrical characteristics of thin gate oxides

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
1998 | Journal article
EID:

2-s2.0-0032063845

Part of ISSN: 00214922
Contributors: Ogata, T.; Ban, C.; Ueyama, A.; Muranaka, S.; Hayashi, T.; Kobayashi, K.; Kobayashi, J.; Kurokawa, H.; Ohno, Y.; Hirayama, M.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Degradation of the characteristics of p<sup>+</sup> poly MOS capacitors with NO nitrided gate oxide due to post nitrogen annealing

International Integrated Reliability Workshop Final Report
1997 | Conference paper
EID:

2-s2.0-0031380178

Contributors: Mazumder, M.K.; Teramoto, A.; Kobayashi, K.; Sekine, M.; Kawazu, S.; Koyama, H.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier

Dielectric breakdown caused by hole-induced-defect in thin SiO <sub>2</sub> films

Applied Surface Science
1997 | Journal article
EID:

2-s2.0-17444433277

Part of ISSN: 01694332
Contributors: Teramoto, A.; Kobayashi, K.; Matsui, Y.; Hirayama, M.
Source: Self-asserted source
Kiyoteru Kobayashi via Scopus - Elsevier
Items per page:
Page 1 of 2