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Scopus Author ID: 55314921300

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Works (14)

UWBG AlN/β-Ga2O3 HEMT on Silicon Carbide Substrate for Low Loss Portable Power Converters and RF Applications

Silicon
2022-11 | Journal article
DOI: 10.1007/s12633-022-01846-w
Contributors: S. Baskaran; M. Shunmugathammal; C. Sivamani; S. Ravi; P. Murugapandiyan; N. Ramkumar
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Design and development of AlGaN/GaN HEMT for biosensing applications for detection of cancers, tumors, and kidney malfunctioning

Electronic Devices, Circuits, and Systems for Biomedical Applications: Challenges and Intelligent Approach
2021 | Book
Part of DOI: 10.1016/B978-0-323-85172-5.00001-0
EID:

2-s2.0-85127666975
Contributors: Mohanbabu, A.; Saravanan, M.; Ajayan, J.; Baskaran, S.
Source: Self-asserted source
Baskaran S via Scopus - Elsevier

Enhanced InGaAs/InAs/InGaAs Composite Channel MOSHEMT Device Performance by Using Double Gate Recessed Structure with HfO<sub>2</sub> as Dielectric Materials

Lecture Notes in Networks and Systems
2021 | Book
DOI: 10.1007/978-981-33-4687-1_49
EID:

2-s2.0-85111390602
Contributors: Saravana Kumar, R.; Mohankumar, N.; Baskaran, S.; Poornachandran, R.
Source: Self-asserted source
Baskaran S via Scopus - Elsevier

H<sub>∞</sub>-dCNN: Enhancing the SNR Using Deep Learning Algorithm in Wireless Communication System

Arabian Journal for Science and Engineering
2021 | Journal article
DOI: 10.1007/s13369-021-06172-8
EID:

2-s2.0-85115141081
Contributors: Priya, C.; Kumutha, D.; Shilpa, M.; Jayanthi, K.; Baskaran, S.
Source: Self-asserted source
Baskaran S via Scopus - Elsevier

H∞-dCNN: Enhancing the SNR using Deep Learning Algorithm in Wireless Communication System

ResearchSquare
2021 | Other
DOI: 10.21203/rs.3.rs-491094
EID:

2-s2.0-85132790807
Contributors: Priya, C.; Kumutha, D.; Shilpa, M.; Jayanthi, K.; Baskaran, S.
Source: Self-asserted source
Baskaran S via Scopus - Elsevier

Impact of High-K and Gate-to-Drain Spacing in InGaAs/InAs/InGaAs-based DG-MOS-HEMT for Low-leakage and High-frequency Applications

IETE Journal of Research
2021 | Journal article
DOI: 10.1080/03772063.2021.1929517
EID:

2-s2.0-85106522769

Part of ISSN: 0974780X 03772063
Contributors: Baskaran, S.; Saravana Kumar, R.; Saminathan, V.; Poornachandran, R.; Mohan Kumar, N.; Janakiraman, V.
Source: Self-asserted source
Baskaran S via Scopus - Elsevier

Noise analysis of double gate composite InAs based HEMTs for high frequency applications

Microsystem Technologies
2021 | Journal article
DOI: 10.1007/s00542-020-04955-x
EID:

2-s2.0-85088386018

Part of ISSN: 14321858 09467076
Contributors: Poornachandran, R.; Mohan Kumar, N.; Saravana Kumar, R.; Baskaran, S.
Source: Self-asserted source
Baskaran S via Scopus - Elsevier

Silicon Nitride Back Barrier in AlGaN/GaN HEMT to Enhance Breakdown Voltage for Satellite Applications

Silicon
2021 | Journal article
DOI: 10.1007/s12633-020-00817-3
EID:

2-s2.0-85096484711

Part of ISSN: 18769918 1876990X
Contributors: Janakiraman, V.; Baskaran, S.; Kumutha, D.
Source: Self-asserted source
Baskaran S via Scopus - Elsevier

Performance analysis of HfO<sub>2</sub>/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications

Journal of Science: Advanced Materials and Devices
2020 | Journal article
DOI: 10.1016/j.jsamd.2020.04.007
EID:

2-s2.0-85085622377
Contributors: Murugapandiyan, P.; Mohanbabu, A.; Rajya Lakshmi, V.; Ramakrishnan, V.N.; Varghese, A.; Wasim, M.O.H.D.; Baskaran, S.; Saravana Kumar, R.; Janakiraman, V.
Source: Self-asserted source
Baskaran S via Scopus - Elsevier

Switching Transient Analysis and Characterization of an E-Mode B-Doped GaN-Capped AlGaN DH-HEMT with a Freewheeling Schottky Barrier Diode (SBD)

Journal of Electronic Materials
2020 | Journal article
DOI: 10.1007/s11664-020-08113-x
EID:

2-s2.0-85083765601

Part of ISSN: 1543186X 03615235
Contributors: Subramanian, B.; Anandan, M.; Veerappan, S.; Panneerselvam, M.; Wasim, M.; Radhakrishnan, S.K.; Pechimuthu, P.; Verma, Y.K.; Vivekanandhan, S.N.; Raju, E.
Source: Self-asserted source
Baskaran S via Scopus - Elsevier

DC and RF Characterization of InAs based Double Delta Doped MOSHEMT Device

Proceedings of International Conference on 2018 IEEE Electron Device Kolkata Conference, EDKCON 2018
2018 | Conference paper
DOI: 10.1109/EDKCON.2018.8770418
EID:

2-s2.0-85070418221
Contributors: Saravana Kumar, R.; Poornachandran, R.; Baskaran, S.; Mohan Kumar, N.; Sandhiya, S.; Shanmugapriya, K.U.
Source: Self-asserted source
Baskaran S via Scopus - Elsevier

Noise Characterization of InAs Based DG-HEMT Devices for RF Applications

Proceedings of International Conference on 2018 IEEE Electron Device Kolkata Conference, EDKCON 2018
2018 | Conference paper
DOI: 10.1109/EDKCON.2018.8770495
EID:

2-s2.0-85070407942
Contributors: Poornachandran, R.; Mohankumar, N.; Saravana Kumar, R.; Baskaran, S.; Kumutha, S.
Source: Self-asserted source
Baskaran S via Scopus - Elsevier

Modeling of 2DEG sheet carrier density and DC characteristics in spacer based AlGaN/AlN/GaN HEMT devices

Superlattices and Microstructures
2013 | Journal article
DOI: 10.1016/j.spmi.2013.10.019
EID:

2-s2.0-84887094342

Part of ISSN: 07496036 10963677
Contributors: Baskaran, S.; Mohanbabu, A.; Anbuselvan, N.; Mohankumar, N.; Godwinraj, D.; Sarkar, C.K.
Source: Self-asserted source
Baskaran S via Scopus - Elsevier

Noise performance of gate engineered double gate MOSFETs for analog and RF applications

ICECE 2010 - 6th International Conference on Electrical and Computer Engineering
2010 | Conference paper
DOI: 10.1109/ICELCE.2010.5700760
EID:

2-s2.0-79951782567
Contributors: Mohankumar, N.; Syamal, B.; Shamshudeen, J.; Vijayan, K.; Saravanakumar, R.; Baskaran, S.; Bharath, K.; Ravi, S.; Sarkar, C.K.
Source: Self-asserted source
Baskaran S via Scopus - Elsevier
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