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Employment (3)

Xidian University: Xi'an, Shaanxi, CN

2019-02-01 to present | Professor (School of Microelectronics & Guangzhou Institute of Technology)
Employment
Source: Self-asserted source
Zhihong LIU

Singapore-MIT Alliance for Research and Technology Centre: Singapore, SG

2011-10-01 to 2019-04-30 | Principal Research Scientist (LEES)
Employment
Source: Self-asserted source
Zhihong LIU

Nanyang Technological University: Singapore, SG

2008-03-02 to 2011-08-26 | Research Associate (Temasek Lab)
Employment
Source: Self-asserted source
Zhihong LIU

Education and qualifications (3)

Nanyang Technological University: Singapore, SG

2004-08-26 to 2011-06-20 | PhD (School of Electrical and Electronics Engineering)
Education
Source: Self-asserted source
Zhihong LIU

Institute of Semiconductors, Chinese Academy of Sciences: Beijing, Beijing, CN

2001-09-01 to 2004-06-30 | M.Eng
Education
Source: Self-asserted source
Zhihong LIU

Nankai University: Tianjin, Tianjin, CN

1997-09-01 to 2001-06-30 | Bachelor (Microelectronics)
Education
Source: Self-asserted source
Zhihong LIU

Works (20)

Multi-Gate Finger Microwave GaN HEMTs on Si Substrates With Individual Source Vias

IEEE Electron Device Letters
2025-03 | Journal article
DOI: 10.1109/LED.2024.3522987
Contributors: Lu Hao; Zhihong Liu; Jin Zhou; Xiaoyan Li; Guangjie Gao; Hanghai Du; Weichuan Xing; Hong Zhou; Jincheng Zhang; Yue Hao
Source: check_circle
Crossref

P-GaN-gate GaN power high-electron mobility transistors with Mg-acceptor Re-passivation realized by ammonia plasma treatment

Applied Physics Letters
2024-10-21 | Journal article
DOI: 10.1063/5.0235346
Contributors: Zhaofeng Wang; Jin Li; Zhihong Liu; Xiaojin Chen; Mei Xu; Shuning Xu; Hu Wei; Xing Chen; Weichuan Xing; Weihang Zhang et al.
Source: check_circle
Crossref

Erratum: “Low ohmic contact resistivity realized by in situ SiNx insertion for high Al-composition-AlGaN/GaN heterostructure” [Appl. Phys. Lett. 121, 172102 (2022)]

Applied Physics Letters
2024-01-15 | Journal article
DOI: 10.1063/5.0195385
Contributors: Hanghai Du; Zhihong Liu; Lu Hao; Weichuan Xing; Weihang Zhang; Hong Zhou; Jincheng Zhang; Yue Hao
Source: check_circle
Crossref

Demonstration of the normally off β -Ga2O3 MOSFET with high threshold voltage and high current density

Applied Physics Letters
2023-11-06 | Journal article
DOI: 10.1063/5.0165780
Contributors: Yuncong Cai; Zhaoqing Feng; Zhengxing Wang; Xiufeng Song; Zhuangzhuang Hu; Xusheng Tian; Chunfu Zhang; Zhihong Liu; Qian Feng; Hong Zhou et al.
Source: check_circle
Crossref

β-Ga₂O₃ Lateral Schottky Barrier Diodes With > 10 kV Breakdown Voltage and Anode Engineering

IEEE Electron Device Letters
2023-10 | Journal article
DOI: 10.1109/LED.2023.3309674
Contributors: Chenlu Wang; Qinglong Yan; Chaoqun Zhang; Chunxu Su; Kun Zhang; Sihan Sun; Zhihong Liu; Weihang Zhang; Sami Alghamdi; Emad Ghandourah et al.
Source: check_circle
Crossref

High-Performance AlN/GaN MISHEMTs on Si With In-Situ SiN Enhanced Ohmic Contacts for Mobile mm-Wave Front-End Applications

IEEE Electron Device Letters
2023-06 | Journal article
DOI: 10.1109/LED.2023.3265058
Contributors: Hanghai Du; Zhihong Liu; Lu Hao; Weichuan Xing; Hong Zhou; Shenglei Zhao; Jincheng Zhang; Yue Hao
Source: check_circle
Crossref

Deep sub-60 mV/dec subthreshold swing independent of gate bias sweep direction in an in situ SiN/Al0.6Ga0.4N/GaN-on-Si metal-insulator high electron mobility transistor

Applied Physics Letters
2023-04-10 | Journal article
DOI: 10.1063/5.0131988
Contributors: Hanghai Du; Zhihong Liu; Lu Hao; Guangjie Gao; Weichuan Xing; Weihang Zhang; Yachao Zhang; Hong Zhou; Shenglei Zhao; Jincheng Zhang et al.
Source: check_circle
Crossref

Low ohmic contact resistivity realized by in situ SiNx insertion for high Al-composition-AlGaN/GaN heterostructure

Applied Physics Letters
2022-10-24 | Journal article
DOI: 10.1063/5.0100329
Contributors: Hanghai Du; Zhihong Liu; Lu Hao; Weichuan Xing; Weihang Zhang; Hong Zhou; Jincheng Zhang; Yue Hao
Source: check_circle
Crossref

High-Performance E-Mode p-Channel GaN FinFET on Silicon Substrate With High I ON/I OFF and High Threshold Voltage

IEEE Electron Device Letters
2022-05 | Journal article
DOI: 10.1109/LED.2022.3155152
Contributors: Hanghai Du; Zhihong Liu; Lu Hao; Huake Su; Tao Zhang; Weihang Zhang; Jincheng Zhang; Yue Hao
Source: check_circle
Crossref

A GaN Complementary FET Inverter With Excellent Noise Margins Monolithically Integrated With Power Gate-Injection HEMTs

IEEE Transactions on Electron Devices
2022-01 | Journal article
DOI: 10.1109/TED.2021.3126267
Contributors: Jiabo Chen; Zhihong Liu; Haiyong Wang; Yue He; Xiaoxiao Zhu; Jing Ning; Jincheng Zhang; Yue Hao
Source: check_circle
Crossref

Demonstration of the p-NiOx/n-Ga2O3 Heterojunction Gate FETs and Diodes With BV2/Ron,sp Figures of Merit of 0.39 GW/cm2 and 1.38 GW/cm2

IEEE Electron Device Letters
2021-04 | Journal article
DOI: 10.1109/LED.2021.3062851
Contributors: Chenlu Wang; Hehe Gong; Weina Lei; Yuncong Cai; Zhuangzhuang Hu; Shengrui Xu; Zhihong Liu; Qian Feng; Hong Zhou; Jiandong Ye et al.
Source: check_circle
Crossref

GaN-on-Si HEMTs Fabricated With Si CMOS-Compatible Metallization for Power Amplifiers in Low-Power Mobile SoCs

IEEE Microwave and Wireless Components Letters
2021-02 | Journal article
DOI: 10.1109/LMWC.2020.3036389
Contributors: Hanlin Xie; Zhihong Liu; Wenrui Hu; Zheng Zhong; Kenneth Lee; Yong-Xin Guo; Geok Ing Ng
Source: check_circle
Crossref

Comprehensive Design of Device Parameters for GaN Vertical Trench MOSFETs

IEEE Access
2020 | Journal article
DOI: 10.1109/ACCESS.2020.2977381
Contributors: Shuang Liu; Xiufeng Song; Jincheng Zhang; Shenglei Zhao; Jun Luo; Hong Zhang; Yachao Zhang; Weihang Zhang; Hong Zhou; Zhihong Liu et al.
Source: check_circle
Crossref

High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers

IEEE Journal of the Electron Devices Society
2020 | Journal article
DOI: 10.1109/JEDS.2020.2967406
Contributors: Loke Wan Khai; Wang Yue; Lee Kwang Hong; Liu Zhihong; Xie Hanlin; Chiah Siau Ben; Kenneth Lee Eng Kian; Zhou Xing; Chuan Seng Tan; Ng Geok Ing et al.
Source: check_circle
Crossref

Impact of Surface Treatments and Post-Deposition Annealing Upon Interfacial Property of ALD-Al₂O₃ on a-Plane GaN

IEEE Journal of the Electron Devices Society
2020 | Journal article
DOI: 10.1109/JEDS.2020.3020893
Contributors: Yanni Zhang; Jincheng Zhang; Zhuangzhuang Hu; Zhaoqing Feng; Hepeng Zhang; Shengrui Xu; Zhihong Liu; Hong Zhou; Yue Hao
Source: check_circle
Crossref

High-Performance Vertical $\beta$ -Ga2O3 Schottky Barrier Diode With Implanted Edge Termination

IEEE Electron Device Letters
2019-11 | Journal article
DOI: 10.1109/LED.2019.2939788
Contributors: Hong Zhou; Qian Feng; Jing Ning; Chunfu Zhang; Peijun Ma; Yue Hao; Qinglong Yan; Jincheng Zhang; Yuanjie Lv; Zhihong Liu et al.
Source: check_circle
Crossref

AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

AIP Advances
2017-09 | Journal article
DOI: 10.1063/1.4999810
Contributors: Xinke Liu; Hong Gu; Kuilong Li; Lunchun Guo; Deliang Zhu; Youming Lu; Jianfeng Wang; Hao-Chung Kuo; Zhihong Liu; Wenjun Liu et al.
Source: check_circle
Crossref

Enhancement of responsivity for a transistor terahertz detector by a Fabry-Pérot resonance-cavity

Applied Physics Letters
2017-04-17 | Journal article
DOI: 10.1063/1.4981397
Contributors: H. W. Hou; Z. Liu; J. H. Teng; T. Palacios; S. J. Chua
Source: check_circle
Crossref

Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN

Journal of Applied Physics
2017-01-28 | Journal article
DOI: 10.1063/1.4974959
Contributors: Y. Li; G. I. Ng; S. Arulkumaran; G. Ye; Z. H. Liu; K. Ranjan; K. S. Ang
Source: check_circle
Crossref

Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO2 grown by atomic layer deposition

Applied Physics Letters
2015-03-02 | Journal article
DOI: 10.1063/1.4914351
Contributors: Gang Ye; Hong Wang; Serene Lay Geok Ng; Rong Ji; Subramaniam Arulkumaran; Geok Ing Ng; Yang Li; Zhi Hong Liu; Kian Siong Ang
Source: check_circle
Crossref
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