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Scopus Author ID: 57206544559

Keywords

Gallium Oxide, Gallium Nitride, Molecular Beam Epitaxy, Fabrication, , III-V Compound Semiconductor, UV Photodetector, High Electron Mobility Transistor, InGaAs/GaAs, GaN on Si(111), GaAs on Si(100)

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United States

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Employment (7)

Tokyo Electron America LLC: Orlando, Florida, US

2020-02-07 to present | Process Engineer (TTCA ADP)
Employment
Source: Self-asserted source
Partha Mukhopadhyay

University of Central Florida: Orlando, Florida, US

2020-02-01 to present | Visiting Research Faculty (The College of Optics and Photonics)
Employment
Source: Self-asserted source
Partha Mukhopadhyay

University of Central Florida: Orlando, FL, US

2015-06-17 to 2020-01-31 | Research Scientist (The College of Optics and Photonics)
Employment
Source: Self-asserted source
Partha Mukhopadhyay

Indian Institute of Technology Kharagpur: Kharagpur, WB, IN

2010-06 to 2015-06 | Lead Epitaxial Grower in GaN and GaAs MBE (Advanced Technology Development Center)
Employment
Source: Self-asserted source
Partha Mukhopadhyay

Indian Institute of Technology Kharagpur: Kharagpur, WB, IN

2007-07 to 2010-04 | Senior Project Assistant (Advanced VLSI Lab)
Employment
Source: Self-asserted source
Partha Mukhopadhyay

Indian Institute of Technology Kharagpur: Kharagpur, WB, IN

2006-10 to 2007-06 | Junior Project Assistant (Electronics and Electrical Communication Engineering)
Employment
Source: Self-asserted source
Partha Mukhopadhyay

Jadavpur University: Kolkata, West Bengal, IN

2005-02 to 2006-09 | Project Fellow (IC Center, Electronics and Tele-Communication Engineering)
Employment
Source: Self-asserted source
Partha Mukhopadhyay

Education and qualifications (4)

Indian Institute of Technology Kharagpur: Kharagpur, WB, IN

2010-07 to 2015-11 | PhD
Education
Source: Self-asserted source
Partha Mukhopadhyay

Indian Institute of Technology Kharagpur: Kharagpur, WB, IN

2007-07-01 to 2010-04-29 | Master of Science (Electronics & Electrical Communication Engineering)
Education
Source: Self-asserted source
Partha Mukhopadhyay

Jadavpur University: Kolkata, West Bengal, IN

2004-02 to 2004-12 | Post Graduate in Embedded System (IC Center, Electronics and Tele-Communication Engineering)
Education
Source: Self-asserted source
Partha Mukhopadhyay

Kalyani Government Engineering College: Kalyani, West Bengal, IN

1999-06-30 to 2003-07-10 | B. Tech (Electronics and Communication Engineering)
Education
Source: Self-asserted source
Partha Mukhopadhyay

Funding (1)

Development of a Wireless Sensor Network & Communication Protocol in Underground Mine Environment

2009-03 to 2011-06 | Grant
Department of Scientific and Industrial Research, Ministry of Science and Technology (Delhi, Kharagpur, IN)
GRANT_NUMBER:

DSIR/TePP/326/2008
Source: Self-asserted source
Partha Mukhopadhyay

Works (50 of 67)

Items per page:
Page 1 of 2

Nucleation of highly uniform AlN thin films by high volume batch ALD on 200 mm platform

Journal of Vacuum Science & Technology A
2024-05-01 | Journal article
DOI: 10.1116/6.0003405
Contributors: Partha Mukhopadhyay; Ivan Fletcher; Zuriel Caribe Couvertier; Brent Schwab; John Gumpher; Winston V. Schoenfeld; Jon Kretzschmar; Anton deVilliers; Jim Fulford
Source: check_circle
Crossref

High-Performance HfO2/Al2O3 Superlattice MIM Capacitor in a 200 mm High-Volume Batch-ALD Platform

IEEE Transactions on Electron Devices
2024-03 | Journal article
DOI: 10.1109/TED.2024.3353702
Contributors: Partha Mukhopadhyay; Ivan Fletcher; Zuriel C. Couvertier; Julio Morris; Jennifer Perez; Chris Nichols; John Allgair; Jim Vandevere; Winston V. Schoenfeld; Sara Aoki et al.
Source: check_circle
Crossref

Role of defects in ultra-high gain in fast planar tin gallium oxide UV-C photodetector by MBE

Applied Physics Letters
2022-09-12 | Journal article
DOI: 10.1063/5.0107557
Contributors: Partha Mukhopadhyay; Isa Hatipoglu; Ymir K. Frodason; Joel B. Varley; Martin S. Williams; Daniel A. Hunter; Naresh K. Gunasekar; Paul R. Edwards; Robert W. Martin; Feng Wu et al.
Source: check_circle
Crossref

Correlation between deep-level defects and functional properties of β-(SnxGa1-x)2O3 on Si photodetectors

Journal of Applied Physics
2021-11-28 | Journal article
DOI: 10.1063/5.0068186
Contributors: Isa Hatipoglu; Daniel A. Hunter; Partha Mukhopadhyay; Martin S. Williams; Paul R. Edwards; Robert W. Martin; Winston V. Schoenfeld; G. Naresh-Kumar
Source: check_circle
Crossref

High Figure‐of‐Merit Gallium Oxide UV Photodetector on Silicon by Molecular Beam Epitaxy: A Path toward Monolithic Integration

Advanced Photonics Research
2021-04 | Journal article
DOI: 10.1002/adpr.202000067
Contributors: Partha Mukhopadhyay; Isa Hatipoglu; Tamil Selvan Sakthivel; Daniel A. Hunter; Paul R. Edwards; Robert W. Martin; Gunasekar Naresh-Kumar; Sudipta Seal; Winston V. Schoenfeld
Source: check_circle
Crossref

Tuning the responsivity of monoclinic $({In}_x{Ga}_{1-x})_2{O}_3$ solar-blind photodetectors grown by metal organic chemical vapor deposition

Journal of Physics D: Applied Physics
2020-11-04 | Journal article
DOI: 10.1088/1361-6463/aba313
Contributors: Isa Hatipoglu; Partha Mukhopadhyay; Fikadu Alema; Tamil S Sakthivel; Sudipta Seal; Andrei Osinsky; Winston V Schoenfeld
Source: check_circle
Crossref

High responsivity tin gallium oxide Schottky ultraviolet photodetectors

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
2020-01-01 | Journal article
DOI: 10.1116/1.5128911
Contributors: Partha Mukhopadhyay; Winston V. Schoenfeld
Source: check_circle
Crossref

Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga <inf>2</inf> O <inf>3</inf> thin film

APL Materials
2019 | Journal article
DOI: 10.1063/1.5064471
EID:

2-s2.0-85061343872
Contributors: Alema, F.; Hertog, B.; Mukhopadhyay, P.; Zhang, Y.; Mauze, A.; Osinsky, A.; Schoenfeld, W.V.; Speck, J.S.; Vogt, T.
Source: Self-asserted source
Partha Mukhopadhyay via Scopus - Elsevier

Tin gallium oxide solar-blind photodetectors on sapphire grown by molecular beam epitaxy

Applied Optics
2019 | Journal article
DOI: 10.1364/AO.58.000D22
EID:

2-s2.0-85065545415
Contributors: Mukhopadhyay, P.; Schoenfeld, W.V.
Source: Self-asserted source
Partha Mukhopadhyay via Scopus - Elsevier

Epitaxial growth of Co3O4 thin films using Co(dpm)3 by MOCVD

Journal of Crystal Growth
2019-11 | Journal article
DOI: 10.1016/j.jcrysgro.2019.125207
Contributors: Fikadu Alema; Andrei Osinsky; Partha Mukhopadhyay; Winston V. Schoenfeld
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Effect of trapped charge in AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by temperature dependent threshold voltage analysis

Superlattices and Microstructures
2018 | Journal article
DOI: 10.1016/j.spmi.2017.10.033
EID:

2-s2.0-85032992995
Contributors: Chakraborty, A.; Ghosh, S.; Mukhopadhyay, P.; Das, S.; Bag, A.; Biswas, D.
Source: Self-asserted source
Partha Mukhopadhyay via Scopus - Elsevier

Elimination of V-shaped pits in InGaN/GaN/AlN/GaN heterostructure by metal modulation growth technique

Semiconductor Science and Technology
2018 | Journal article
DOI: 10.1088/1361-6641/aaa7cc
EID:

2-s2.0-85043483584
Contributors: Chakraborty, A.; Bag, A.; Mukhopadhyay, P.; Ghosh, S.; Biswas, D.
Source: Self-asserted source
Partha Mukhopadhyay via Scopus - Elsevier

Observation and analysis of kink effect during drain current inception of GaN HEMT

Superlattices and Microstructures
2018 | Journal article
DOI: 10.1016/j.spmi.2018.04.035
EID:

2-s2.0-85056228688
Contributors: Bag, A.; Das, S.; Mukhopadhyay, P.; Biswas, D.
Source: Self-asserted source
Partha Mukhopadhyay via Scopus - Elsevier

OFF-State Leakage and Current Collapse in AlGaN/GaN HEMTs: A Virtual Gate Induced by Dislocations

IEEE Transactions on Electron Devices
2018-03-03 | Journal article
DOI: 10.1109/TED.2018.2808334
Source: Self-asserted source
Partha Mukhopadhyay
grade
Preferred source (of 2)‎

Tin-gallium-oxide-based UV-C detectors

SPIE Opto Oxide-based Materials and Devices IX;
2018-02-23 | Journal article
DOI: 10.1117/12.2302729
Source: Self-asserted source
Partha Mukhopadhyay
grade
Preferred source (of 2)‎

Fast growth rate of epitaxial β–Ga2O3 by close coupled showerhead MOCVD

Journal of Crystal Growth
2017-10 | Journal article
DOI: 10.1016/j.jcrysgro.2017.06.001
Source: Self-asserted source
Partha Mukhopadhyay
grade
Preferred source (of 2)‎

MgZnO grown by molecular beam epitaxy on N-Type β-Ga 2 O 3 for UV Schottky barrier solar-blind photodetectors

SPIE Photonic West: Oxide-based Materials and Devices VIII
2017-02-24 | Conference paper
DOI: 10.1117/12.2254937
Source: Self-asserted source
Partha Mukhopadhyay
grade
Preferred source (of 2)‎

Vertical solar blind Schottky photodiode based on homoepitaxial Ga 2 O 3 thin film

SPIE Photonic West: Oxide-based Materials and Devices VIII
2017-02-24 | Conference paper
DOI: 10.1117/12.2260824
Source: Self-asserted source
Partha Mukhopadhyay
grade
Preferred source (of 2)‎

Solar blind photodetector based on epitaxial zinc doped Ga2O3 thin film

physica status solidi (a)
2017-01-05 | Journal article
DOI: 10.1002/pssa.201600688
Source: Self-asserted source
Partha Mukhopadhyay
grade
Preferred source (of 2)‎

Investigation of cross-hatch surface and study of anisotropic relaxation and dislocation on InGaAs on GaAs (001)

Electronic Materials Letters
2016-05-01 | Journal article
DOI: 10.1007/s13391-016-5318-8
Source: Self-asserted source
Partha Mukhopadhyay
grade
Preferred source (of 2)‎

Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure

Electronic Materials Letters
2016-03-01 | Journal article
DOI: 10.1007/s13391-015-5249-9
Source: Self-asserted source
Partha Mukhopadhyay
grade
Preferred source (of 2)‎

On the different origins of electrical parameter degradation in reverse‐bias stressed AlGaN/GaN HEMTs

physica status solidi (a)
2016-02-03 | Journal article
DOI: 10.1002/pssa.201532916
Source: Self-asserted source
Partha Mukhopadhyay
grade
Preferred source (of 2)‎

Comparative study on hydrostatic strain, stress and dislocation density of Al <inf>0.3</inf> Ga <inf>0.7</inf> N/GaN heterostructure before and after a-Si <inf>3</inf> N <inf>4</inf> passivation

AIP Conference Proceedings
2015 | Conference paper
DOI: 10.1063/1.4929181
EID:

2-s2.0-85006219652
Contributors: Dinara, S.M.; Jana, S.K.; Mukhopadhyay, P.; Ghosh, S.; Bhattacharya, S.; Biswas, D.
Source: Self-asserted source
Partha Mukhopadhyay via Scopus - Elsevier

Comparison of different grading schemes in InGaAs metamorphic buffers on GaAs substrate: Tilt dependence on cross-hatch irregularities

Applied Surface Science
2015 | Journal article
DOI: 10.1016/j.apsusc.2015.09.145
EID:

2-s2.0-84949513050
Contributors: Kumar, R.; Bag, A.; Mukhopadhyay, P.; Das, S.; Biswas, D.
Source: Self-asserted source
Partha Mukhopadhyay via Scopus - Elsevier

Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness

Applied Surface Science
2015 | Journal article
DOI: 10.1016/j.apsusc.2014.10.155
EID:

2-s2.0-84920641937
Contributors: Kumar, R.; Mukhopadhyay, P.; Bag, A.; Jana, S.Kr.; Chakraborty, A.; Das, S.; Mahata, M.Kr.; Biswas, D.
Source: Self-asserted source
Partha Mukhopadhyay via Scopus - Elsevier

Enhancement of two dimensional electron gas concentrations due to Si <inf>3</inf> N <inf>4</inf> passivation on Al <inf>0.3</inf> Ga <inf>0.7</inf> N/GaN heterostructure: Strain and interface capacitance analysis

AIP Advances
2015 | Journal article
DOI: 10.1063/1.4919098
EID:

2-s2.0-84928485653
Contributors: Dinara, S.M.; Jana, S.K.; Ghosh, S.; Mukhopadhyay, P.; Kumar, R.; Chakraborty, A.; Bhattacharya, S.; Biswas, D.
Source: Self-asserted source
Partha Mukhopadhyay via Scopus - Elsevier

Erratum: High-resolution X-ray diffraction analysis of Al<inf>x</inf>Ga<inf>1-x</inf>N/In<inf>x</inf>Ga<inf>1-x</inf>N/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations (Journal of Applied Physics (2014) 115 (174507))

Journal of Applied Physics
2015 | Journal article
DOI: 10.1063/1.4907314
EID:

2-s2.0-84923668358
Contributors: Jana, S.K.; Mukhopadhyay, P.; Ghosh, S.; Kabi, S.; Bag, A.; Kumar, R.; Biswas, D.
Source: Self-asserted source
Partha Mukhopadhyay via Scopus - Elsevier

Evolution and analysis of nitride surface and interfaces by statistical techniques: A correlation with RHEED through kinetic roughening

Electronic Materials Letters
2015 | Journal article
DOI: 10.1007/s13391-015-5129-3
EID:

2-s2.0-84937950178
Contributors: Bag, A.; Kumar, R.; Mukhopadhyay, P.; Mahata, M.K.; Chakraborty, A.; Ghosh, S.; Jana, S.K.; Biswas, D.
Source: Self-asserted source
Partha Mukhopadhyay via Scopus - Elsevier

Quantitative investigation into the source of current slump in AlGaN/GaN HEMT on both Si (111) and sapphire: Self-heating and trapping

AIP Conference Proceedings
2015 | Conference paper
DOI: 10.1063/1.4915360
EID:

2-s2.0-85006208737
Contributors: Bag, A.; Mukhopadhyay, P.; Ghosh, S.; Das, P.; Chakraborty, A.; Dinara, S.M.; Kabi, S.; Biswas, D.
Source: Self-asserted source
Partha Mukhopadhyay via Scopus - Elsevier

2DEG modulation in double quantum well enhancement mode nitride HEMT

Physica E: Low-dimensional Systems and Nanostructures
2015-11-01 | Journal article
DOI: 10.1016/j.physe.2015.06.011
Source: Self-asserted source
Partha Mukhopadhyay
grade
Preferred source (of 2)‎

Fowler–Nordheim Tunnelling Contribution in AlGaN/GaN on Si (111) Schottky Current

IETE Technical Review
2015-06-15 | Journal article
DOI: 10.1080/02564602.2015.1042933
Source: Self-asserted source
Partha Mukhopadhyay
grade
Preferred source (of 2)‎

A novel growth strategy and characterization of fully relaxed un-tilted FCC GaAs on Si(100)

Journal of Crystal Growth
2015-05 | Journal article
DOI: 10.1016/j.jcrysgro.2015.02.030
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Influence of Growth Morphology on Electrical and Thermal Modeling of AlGaN/GaN HEMT on Sapphire and Silicon

Solid State Electronics
2015-02 | Journal article
DOI: 10.1016/j.sse.2014.11.017
Source: Self-asserted source
Partha Mukhopadhyay
grade
Preferred source (of 2)‎

An unified analytical model for design consideration of doped cubic and undoped hexagonal AlGaN/GaN MIS gate HEMTs

Solid-State Electronics
2014 | Journal article
DOI: 10.1016/j.sse.2014.03.006
EID:

2-s2.0-84898993793
Contributors: Ghosh, S.; Bag, A.; Jana, S.K.; Mukhopadhyay, P.; Dinara, S.M.; Kabi, S.; Biswas, D.
Source: Self-asserted source
Partha Mukhopadhyay via Scopus - Elsevier

Comparative DC characteristic analysis of AlGaN/GaN HEMTs grown on Si(111) and sapphire substrates by MBE

Journal of Electronic Materials
2014 | Journal article
DOI: 10.1007/s11664-014-3050-4
EID:

2-s2.0-84899122319
Contributors: Mukhopadhyay, P.; Bag, A.; Gomes, U.; Banerjee, U.; Ghosh, S.; Kabi, S.; Chang, E.Y.I.; Dabiran, A.; Chow, P.; Biswas, D.
Source: Self-asserted source
Partha Mukhopadhyay via Scopus - Elsevier

Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer

AIP Advances
2014 | Journal article
DOI: 10.1063/1.4902090
EID:

2-s2.0-84910649340
Contributors: Mahata, M.K.; Ghosh, S.; Jana, S.K.; Chakraborty, A.; Bag, A.; Mukhopadhyay, P.; Kumar, R.; Biswas, D.
Source: Self-asserted source
Partha Mukhopadhyay via Scopus - Elsevier

Comprehensive study of AlGaAs/GaAs heterostructures grown by MBE: Structural and compositional analysis

2014 IEEE 2nd International Conference on Emerging Electronics: Materials to Devices, ICEE 2014 - Conference Proceedings
2014 | Conference paper
DOI: 10.1109/ICEmElec.2014.7151137
EID:

2-s2.0-84988222650
Contributors: Kumar, R.; Mukhopadhyay, P.; Jana, S.K.; Bag, A.; Ghosh, S.; Das, S.; Mahata, M.K.; Biswas, D.
Source: Self-asserted source
Partha Mukhopadhyay via Scopus - Elsevier

Effect of longitudinal electric field and self heating of channel on linearity and gain of AlGaN/GaN HEMT on Sapphire (0001)

IEEE TechSym 2014 - 2014 IEEE Students' Technology Symposium
2014 | Conference paper
DOI: 10.1109/TechSym.2014.6808083
EID:

2-s2.0-84901768672
Contributors: Bag, A.; Mukhopadhyay, P.; Ghosh, S.; Kumar, R.; Dinara, S.M.; Kabi, S.; Chakraborty, A.; Biswas, D.
Source: Self-asserted source
Partha Mukhopadhyay via Scopus - Elsevier

Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors

Applied Physics Letters
2014 | Journal article
DOI: 10.1063/1.4893453
EID:

2-s2.0-84929411355
Contributors: Ghosh, S.; Dinara, S.M.; Mukhopadhyay, P.; Jana, S.K.; Bag, A.; Chakraborty, A.; Chang, E.Y.; Kabi, S.; Biswas, D.
Source: Self-asserted source
Partha Mukhopadhyay via Scopus - Elsevier

Growth and characterization of Al <inf>0.15</inf> Ga <inf>0.85</inf> As/GaAs pseudomorphic heterostructure by MBE

IEEE TechSym 2014 - 2014 IEEE Students' Technology Symposium
2014 | Conference paper
DOI: 10.1109/TechSym.2014.6808082
EID:

2-s2.0-84901745465
Contributors: Mahata, M.K.; Ghosh, S.; Jana, S.; Mukhopadhyay, P.; Bag, A.; Mukulika, S.; Dinara, R.K.; Das, S.; Chakraborty, A.; Biswas, D.
Source: Self-asserted source
Partha Mukhopadhyay via Scopus - Elsevier

Growth and Characterization of Self-Assembled InAs Quantum Dots on Si (100) for Monolithic Integration by MBE

IEEE Transactions on Nanotechnology
2014 | Journal article
DOI: 10.1109/TNANO.2014.2331706
EID:

2-s2.0-84924118739
Contributors: Jana, S.K.; Mukhopadhyay, P.; Kabi, S.; Halder, N.N.; Bag, A.; Ghosh, S.; Biswas, D.
Source: Self-asserted source
Partha Mukhopadhyay via Scopus - Elsevier

High-resolution X-ray diffraction analysis of Al<inf>x</inf>Ga<inf>1-x</inf>N/In<inf>x</inf>Ga<inf>1-x</inf>N/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations

Journal of Applied Physics
2014 | Journal article
DOI: 10.1063/1.4875382
EID:

2-s2.0-84903902161
Contributors: Jana, S.K.; Mukhopadhyay, P.; Ghosh, S.; Kabi, S.; Bag, A.; Kumar, R.; Biswas, D.
Source: Self-asserted source
Partha Mukhopadhyay via Scopus - Elsevier

Growth and Characterization of Self Assembled InAs Quantum Dots on Si (100) for Monolithic Integration by MBE

IEEE Transactions on Nanotechnology
2014-09 | Journal article
Source: Self-asserted source
Partha Mukhopadhyay

Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors

Applied Physics Letters
2014-08 | Journal article
Source: Self-asserted source
Partha Mukhopadhyay

Effect of Vertical and Longitudinal Electric Field on 2DEG of AlGaN/GaN HEMT on Silicon: A Qualitative Reliability Study

Physics of Semiconductor Devices
2014-07 | Book chapter
Source: Self-asserted source
Partha Mukhopadhyay

An unified analytical model for design consideration of doped cubic and undoped hexagonal AlGaN/GaN MIS gate HEMTs

Solid-State Electronics
2014-06 | Journal article
Source: Self-asserted source
Partha Mukhopadhyay

Comprehensive Analytical Modeling of N-polar GaN/AlGaN Insulated Gate HEMTs with and without Polarization Neutralization Layer

Physics of Semiconductor Devices
2014-06 | Book chapter
Source: Self-asserted source
Partha Mukhopadhyay

Effect of longitudinal electric field and self heating of channel on linearity and gain of AlGaN/GaN HEMT on Sapphire (0001)

Students' Technology Symposium (TechSym), 2014 IEEE
2014-05 | Conference paper
Source: Self-asserted source
Partha Mukhopadhyay

Growth and characterization of Al 0.15 Ga 0.85 As/GaAs pseudomorphic heterostructure by MBE

Students' Technology Symposium (TechSym), 2014 IEEE
2014-05 | Conference paper
Source: Self-asserted source
Partha Mukhopadhyay

High-resolution X-ray diffraction analysis of AlxGa12xN/InxGa12xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations

Journal of Applied Physics
2014-05 | Journal article
Source: Self-asserted source
Partha Mukhopadhyay
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Peer review (6 reviews for 2 publications/grants)

Review activity for Journal of applied physics. (4)
Review activity for Journal of vacuum science & technology. (2)
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