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Employment (3)

Synchrotron Light Research Institute: Nakhon Ratchasima, TH

2023-11-01 to 2024-07-31 | Researcher
Employment
Source: Self-asserted source
Phongsaphak Sittimart

Kyushu University: Fukuoka, JP

2023-04-01 to 2023-09-30 | (Res.)Assistant Professor (Department of Advanced Energy Science and Engineering)
Employment
Source: Self-asserted source
Phongsaphak Sittimart

Kyushu University: Fukuoka, JP

2022-10-01 to 2023-03-31 | Postdoctoral Researcher (Department of Applied Science for Electronics and Materials)
Employment
Source: Self-asserted source
Phongsaphak Sittimart

Works (27)

Harsh Environment‐Immune All‐Carbon Visible Light Photodetector: Sensitivity Improvement by Nitrogen‐Vacancy Center Density Enhancement Through Electron Irradiation

Small
2025-03 | Journal article
Contributors: Sreenath Mylo Valappil; Taisuke Kageura; Shinya Ohmagari; Shinobu Onoda; Phongsaphak Sittimart; Hiroshi Naragino; Tsuyoshi Yoshitake
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Crossref

Maximizing visible Raman resolution of nanodiamond grains fabricated by coaxial arc plasma deposition through oxygen plasma etching optimization

Surface and Interface Analysis
2024-04 | Journal article
Contributors: Sreenath Mylo Valappil; Abdelrahman Zkria; Phongsaphak Sittimart; Shinya Ohmagari; Tsuyoshi Yoshitake
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Crossref

Wetting state and mechanical property alteration for the Fe3Si films using rapid thermal annealing under various temperatures

Heliyon
2023-12 | Journal article
Contributors: Nattakorn Borwornpornmetee; Thawichai Traiprom; Takafumi Kusaba; Phongsaphak Sittimart; Hiroshi Naragino; Boonchoat Paosawatyanyong; Tsuyoshi Yoshitake; Nathaporn Promros
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Crossref

Heteroepitaxial growth of β-Ga2O3 thin films on single crystalline diamond (111) substrates by radio frequency magnetron sputtering

Applied Physics Express
2023-10-01 | Journal article
Contributors: Takafumi Kusaba; Phongsaphak Sittimart; Yuki Katamune; Taisuke Kageura; Hiroshi Naragino; Shinya Ohmagari; Sreenath Mylo Valappil; Satoki Nagano; Abdelrahman Zkria; Tsuyoshi Yoshitake
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Crossref

Thermally Stable and Radiation‐Proof Visible‐Light Photodetectors Made from N‐Doped Diamond

Advanced Optical Materials
2023-06 | Journal article
Contributors: Phongsaphak Sittimart; Shinya Ohmagari; Hitoshi Umezawa; Hiromitsu Kato; Kotaro Ishiji; Tsuyoshi Yoshitake
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Crossref

Impact of Laser‐Induced Graphitization on Diamond Schottky Barrier Diodes

physica status solidi (a)
2022-10 | Journal article
Contributors: Tomoki Iwao; Phongsaphak Sittimart; Tsuyoshi Yoshitake; Hitoshi Umezawa; Shinya Ohmagari
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Investigation of morphological surface features, wetting behavior and mechanical traits under various substrate temperatures for beta iron disilicide prepared via facing-targets sputtering

Materials Science in Semiconductor Processing
2022-08 | Journal article
Contributors: Peerasil Charoenyuenyao; Rawiwan Chaleawpong; Nattakorn Borwornpornmetee; Boonchoat Paosawatyanyong; Phongsaphak Sittimart; Tsuyoshi Yoshitake; Nathaporn Promros
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Crossref

Reverse bias dependent impedance and dielectric properties of Al/n-NC FeSi2/p-Si/Pd heterostructures formed by facing-targets sputtering

Materials Science in Semiconductor Processing
2022-08 | Journal article
Part of ISSN: 1369-8001
Source: Self-asserted source
Phongsaphak Sittimart

Nanocarbon ohmic electrodes fabricated by coaxial arc plasma deposition for phosphorus-doped diamond electronics application

AIP Advances
2022-08-01 | Journal article
Contributors: Sreenath Mylo Valappil; Shinya Ohmagari; Abdelrahman Zkria; Phongsaphak Sittimart; Eslam Abubakr; Hiromitsu Kato; Tsuyoshi Yoshitake
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Crossref

Diamond/β-Ga2O3 pn heterojunction diodes fabricated by low-temperature direct-bonding

AIP Advances
2021-10-01 | Journal article
Contributors: Phongsaphak Sittimart; Shinya Ohmagari; Takashi Matsumae; Hitoshi Umezawa; Tsuyoshi Yoshitake
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Crossref

Enhanced in-plane uniformity and breakdown strength of diamond Schottky barrier diodes fabricated on heteroepitaxial substrates

Japanese Journal of Applied Physics
2021-05-01 | Journal article
Contributors: Phongsaphak Sittimart; Shinya Ohmagari; Tsuyoshi Yoshitake
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Photovoltaic, capacitance-voltage, conductance-voltage, and electrical impedance characteristics of p-type silicon/intrinsic-silicon/n-type semiconducting iron disilicide heterostructures built via facing target direct-current sputtering

Thin Solid Films
2020-09 | Journal article
Contributors: Rawiwan Chaleawpong; Nathaporn Promros; Peerasil Charoenyuenyao; Nattakorn Borwornpornmetee; Pattarapol Sittisart; Phongsaphak Sittimart; Yūki Tanaka; Tsuyoshi Yoshitake
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Crossref
grade
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Diode Parameters and Equivalent Electrical Circuit Model of n-Type Silicon/B-Doped p-Type Ultrananocrystalline Diamond Heterojunctions Manufactured Through Coaxial Arc Plasma Deposition

Journal of Nanoscience and Nanotechnology
2020-08-01 | Journal article
Part of ISSN: 1533-4880
Contributors: Rawiwan Chaleawpong; Nathaporn Promros; Peerasil Charoenyuenyao; Phongsaphak Sittimart; Satoshi Takeichi; Yūki Katamune; Abdelrahman Zkria; Eslam Abubakr; Mohamed Egiza; Ali Mohamed Ali et al.
Source: Self-asserted source
Phongsaphak Sittimart via Crossref Metadata Search

Analysis of Electrical Characteristics of Pd/n-Nanocarbon/p-Si Heterojunction Diodes: By C-V-f and G/w-V-f

Journal of Nanomaterials
2020-07-17 | Journal article
Contributors: Abdelrahman Zkria; Eslam Abubakr; Phongsaphak Sittimart; Tsuyoshi Yoshitake
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grade
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Photovoltaic Properties and Series Resistance of p-Type Si/Intrinsic Si/n-Type Nanocrystalline FeSi2 Heterojunctions Created by Utilizing Facing-Targets Direct-Current Sputtering

Journal of Nanoscience and Nanotechnology
2019-03-01 | Journal article
Part of ISSN: 1533-4880
Contributors: Weerasaruth Kaenrai; Nathaporn Promros; Phongsaphak Sittimart; Rawiwan Chaleawpong; Peerasil Charoenyuenyao; Thanachai Changcharoen; Adison Nopparuchikun; Tomohiro Nogami; Tsuyoshi Yoshitake
Source: Self-asserted source
Phongsaphak Sittimart via Crossref Metadata Search

Characterization of junction parameters in n-type nanocrystalline iron disilicide/intrinsic ultrananocrystalline diamond/amorphous carbon composite/p-type silicon heterojunctions

Materials Today: Proceedings
2018 | Conference paper
EID:

2-s2.0-85074790923

Part of ISBN:

22147853

Contributors: Sittimart, P.; Nopparuchikun, A.; Onsee, P.; Duangrawa, A.; Teakchaicum, S.; Promros, N.
Source: Self-asserted source
Phongsaphak Sittimart via Scopus - Elsevier

Production of p-Type Si/n-Type β-FeSi<inf>2</inf> Heterojunctions Using Facing-Targets Direct-Current Sputtering and Evaluation of Their Resistance and Interface State Density

Physica Status Solidi (A) Applications and Materials Science
2018 | Journal article
EID:

2-s2.0-85054553268

Part of ISBN:

18626319 18626300

Contributors: Chaleawpong, R.; Promros, N.; Charoenyuenyao, P.; Nopparuchikun, A.; Sittimart, P.; Nogami, T.; Yoshitake, T.
Source: Self-asserted source
Phongsaphak Sittimart via Scopus - Elsevier

Interface State Density and Series Resistance of n-Type Nanocrystalline FeSi2/p-Type Si Heterojunctions Formed by Utilizing Facing-Target Direct-Current Sputtering

Journal of Nanoscience and Nanotechnology
2018-03-01 | Journal article
Part of ISSN: 1533-4880
Contributors: Phongsaphak Sittimart; Asanlaya Duangrawa; Peeradon Onsee; Sakmongkon Teakchaicum; Adison Nopparuchikun; Nathaporn Promros
Source: Self-asserted source
Phongsaphak Sittimart via Crossref Metadata Search

Carrier transportation properties and series resistance of n-type β-FeSi<inf>2</inf>/p-type Si heterojunctions fabricated by RF magnetron sputtering

Japanese Journal of Applied Physics
2017 | Journal article
EID:

2-s2.0-85020852765

Part of ISBN:

13474065 00214922

Contributors: Nopparuchikun, A.; Promros, N.; Teakchaicum, S.; Onsee, P.; Duangrawa, A.; Sittimart, P.
Source: Self-asserted source
Phongsaphak Sittimart via Scopus - Elsevier
grade
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Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi2 Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering

Advances in Materials Science and Engineering
2017 | Journal article
Contributors: Phongsaphak Sittimart; Adison Nopparuchikun; Nathaporn Promros
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Crossref
grade
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Interface-state density estimation of n-type nanocrystalline FeSi<inf>2</inf>/p-type Si heterojunctions fabricated by pulsed laser deposition

Advances in Natural Sciences: Nanoscience and Nanotechnology
2017 | Journal article
EID:

2-s2.0-85028004911

Part of ISBN:

20436262

Contributors: Nopparuchikun, A.; Promros, N.; Sittimart, P.; Onsee, P.; Duangrawa, A.; Teakchaicum, S.; Nogami, T.; Yoshitake, T.
Source: Self-asserted source
Phongsaphak Sittimart via Scopus - Elsevier

Characterization of n-Type nanocrystalline iron disilicide/intrinsic ultrananocrystalline diamond/amorphous carbon composite/p-Type silicon heterojunctions at low temperatures

Journal of Nanoelectronics and Optoelectronics
2016 | Journal article
EID:

2-s2.0-85015807122

Part of ISBN:

15551318 1555130X

Contributors: Promros, N.; Baba, R.; Kishimoto, H.; Sittimart, P.; Hanada, T.; Hanada, K.; Zkria, A.; Shaban, M.; Yoshitake, T.
Source: Self-asserted source
Phongsaphak Sittimart via Scopus - Elsevier

Epitaxial growth of β-FeSi2 thin films on Si(111) substrates by radio frequency magnetron sputtering and their application to near-infrared photodetection

Japanese Journal of Applied Physics
2016 | Journal article
EID:

2-s2.0-85020905712

Part of ISBN:

13474065 00214922

Contributors: Promros, N.; Baba, R.; Takahara, M.; Mostafa, T.M.; Sittimart, P.; Shaban, M.; Yoshitake, T.
Source: Self-asserted source
Phongsaphak Sittimart via Scopus - Elsevier
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Investigation of electrical transport properties in heterojunctions comprised of silicon substrate and nanocrystalline iron disilicide films

International Journal of Nanotechnology
2016 | Journal article
EID:

2-s2.0-84997113235

Part of ISBN:

14757435

Contributors: Promros, N.; Sittimart, P.; Kaenrai, W.
Source: Self-asserted source
Phongsaphak Sittimart via Scopus - Elsevier
grade
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Physical properties of copper films deposited by compact-size magnetron sputtering source with changing magnetic field strength

Key Engineering Materials
2016 | Book
EID:

2-s2.0-84958211396

Part of ISBN:

16629795 10139826

Contributors: Promros, N.; Sittimart, P.; Patanoo, N.; Kongnithichalerm, S.; Horprathum, M.; Bhathumnavin, W.; Paosawatyanyong, B.
Source: Self-asserted source
Phongsaphak Sittimart via Scopus - Elsevier
grade
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Characterization of n-Type Nanocrystalline Iron Disilicide/Intrinsic Ultrananocrystalline Diamond/Amorphous Carbon Composite/p-Type Silicon Heterojunction Photodiodes

Advanced Materials Research
2015 | Journal article
Part of ISSN: 1662-8985
Contributors: Nathaporn Promros; Kenji Hanada; Motoki Takahara; Takanori Hanada; Ryuji Baba; Phongsaphak Sittimart; Li Chen; Tsuyoshi Yoshitake
Source: Self-asserted source
Phongsaphak Sittimart via Crossref Metadata Search

Temperature Dependent Current-Voltage Characteristics of n-Type β-FeSi<sub>2</sub>/Intrinsic Si/p-Type Si Heterojunctions

Advanced Materials Research
2015-07 | Journal article
Part of ISSN: 1662-8985
Contributors: Nathaporn Promros; Dalin Prajakkan; Nantharat Hongsa; Nattanee Suthayanan; Phongsaphak Sittimart; Motoki Takahara; Ryuji Baba; Tarek M. Mostafa; Mahmoud Shaban; Tomohiro Yoshitake
Source: Self-asserted source
Phongsaphak Sittimart via Crossref Metadata Search

Peer review (5 reviews for 3 publications/grants)

Review activity for Advanced optical materials (1)
Review activity for Applied physics letters. (3)
Review activity for Vacuum. (1)