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Institut für Solarenergieforschung GmbH: Emmerthal, Niedersachsen, DE

2017-03-01 to present | Project Leader
Employment
Source: Self-asserted source
Tobias F. Wietler

Works (38)

From PERC to Tandem: POLO- and p+/n+ Poly-Si Tunneling Junction as Interface Between Bottom and Top Cell

IEEE Journal of Photovoltaics
2019-01 | Journal article
Contributors: Robby Peibst; Michael Rienacker; Byungsul Min; Christina Klamt; Raphael Niepelt; Tobias F. Wietler; Thorsten Dullweber; Eduard Sauter; Jens Hubner; Michael Oestreich et al.
Source: check_circle
Crossref

High Temperature Annealing of ZnO:Al on Passivating POLO Junctions: Impact on Transparency, Conductivity, Junction Passivation, and Interface Stability

IEEE Journal of Photovoltaics
2019-01 | Journal article
Contributors: Tobias F. Wietler; Byungsul Min; Sina Reiter; Yevgeniya Larionova; Rolf Reineke-Koch; Frank Heinemeyer; Rolf Brendel; Armin Feldhoff; Jan Krugener; Dominic Tetzlaff et al.
Source: check_circle
Crossref

Characterization of thin SiGe layers on Si (001) by spectroscopic ellipsometry for Ge fractions from 0 to 100%

Applied Surface Science
2017-11 | Journal article
Contributors: Jan Schmidt; Marius Eilert; Sven Peters; Tobias F. Wietler
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Crossref

Pinhole density and contact resistivity of carrier selective junctions with polycrystalline silicon on oxide

Applied Physics Letters
2017-06-19 | Journal article
Contributors: T. F. Wietler; D. Tetzlaff; J. Krügener; M. Rienäcker; F. Haase; Y. Larionova; R. Brendel; R. Peibst
Source: check_circle
Crossref

Formation and properties of high-dose nitrogen implanted epitaxially grown Gd2O3 on silicon

Journal of Applied Physics
2016-10-14 | Journal article
Contributors: A. Joseph; D. Tetzlaff; J. Schmidt; R. Böttger; T. F. Wietler; H. J. Osten
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Crossref

Room temperature direct band gap emission characteristics of surfactant mediated grown compressively strained Ge films

Nanotechnology
2016-09 | Journal article
Contributors: Ajit K Katiyar; Andreas Grimm; R Bar; Jan Schmidt; Tobias Wietler; H Joerg Osten; Samit K Ray
Source: Self-asserted source
Tobias F. Wietler via Crossref Metadata Search

Parasitic Absorption in Polycrystalline Si-layers for Carrier-selective Front Junctions

Energy Procedia
2016-08 | Journal article
Contributors: Sina Reiter; Nico Koper; Rolf Reineke-Koch; Yevgeniya Larionova; Mircea Turcu; Jan Krügener; Dominic Tetzlaff; Tobias Wietler; Uwe Höhne; Jan-Dirk Kähler et al.
Source: Self-asserted source
Tobias F. Wietler via Crossref Metadata Search

Strain-induced phase variation and dielectric constant enhancement of epitaxial Gd2O3

Journal of Applied Physics
2016-07-07 | Journal article
Contributors: P. Shekhter; D. Schwendt; Y. Amouyal; T. F. Wietler; H. J. Osten; M. Eizenberg
Source: check_circle
Crossref

Surfactant-mediated epitaxy of thin germanium films on SiGe(001) virtual substrates

Journal of Crystal Growth
2016-06 | Journal article
Contributors: J. Schmidt; D. Tetzlaff; E. Bugiel; T.F. Wietler
Source: Self-asserted source
Tobias F. Wietler via Crossref Metadata Search

Working principle of carrier selective poly-Si/c-Si junctions: Is tunnelling the whole story?

Solar Energy Materials and Solar Cells
2016-06 | Journal article
Contributors: R. Peibst; U. Römer; Y. Larionova; M. Rienäcker; A. Merkle; N. Folchert; S. Reiter; M. Turcu; B. Min; J. Krügener et al.
Source: Self-asserted source
Tobias F. Wietler via Crossref Metadata Search

In situ observation of low temperature growth of Ge on Si(111) by reflection high energy electron diffraction

Applied Surface Science
2016-05 | Journal article
Contributors: Andreas Grimm; Andreas Fissel; Eberhard Bugiel; Tobias F. Wietler
Source: Self-asserted source
Tobias F. Wietler via Crossref Metadata Search

Ion Implantation for Poly-Si Passivated Back-Junction Back-Contacted Solar Cells

IEEE J. Photovoltaics
2015-03 | Journal article
Contributors: Udo Romer; Robby Peibst; Tobias Ohrdes; Bianca Lim; Jan Krugener; Tobias Wietler; Rolf Brendel
Source: Self-asserted source
Tobias F. Wietler via Crossref Metadata Search

Optical Emission Characteristics of Compressively Strained Ge Films

12th International Conference on Fiber Optics and Photonics
2014 | Conference paper
Contributors: Ajit Katiyar; Andreas Grimm; RAKESH ALUGURI; Rajshekhar Bar; Tobias Wietler; H. J. Osten; Samit K. Ray
Source: Self-asserted source
Tobias F. Wietler via Crossref Metadata Search

Recombination behavior and contact resistance of n+ and p+ poly-crystalline Si/mono-crystalline Si junctions

Solar Energy Materials and Solar Cells
2014 | Journal article
Contributors: Udo Römer; Robby Peibst; Tobias Ohrdes; Bianca Lim; Jan Krügener; Eberhard Bugiel; Tobias Wietler; Rolf Brendel
Source: Self-asserted source
Tobias F. Wietler via Crossref Metadata Search
grade
Preferred source (of 2)‎

A Simple Model Describing the Symmetric <formula formulatype="inline"><tex Notation="TeX">$I\hbox{--}V$</tex></formula> Characteristics of <formula formulatype="inline"><tex Notation="TeX">$\hbox{p}$</tex></formula> Polycrystalline Si/ <formula formulatype="inline"><tex Notation="TeX">$\hbox{n}$</tex></formula> Monocrystalline Si, and <formula formulatype="inline"> <tex Notation="TeX">$\hbox{n}$</tex></formula> Polycrystalline Si/<formula formulatype="inline"><tex Notation="TeX">$\hbox{p}$</tex></formula> Monocrystalline Si Junctions

IEEE J. Photovoltaics
2014-05 | Journal article
Contributors: Robby Peibst; Udo Romer; Karl Rudiger Hofmann; Bianca Lim; Tobias F. Wietler; Jan Krugener; Nils-Peter Harder; Rolf Brendel
Source: Self-asserted source
Tobias F. Wietler via Crossref Metadata Search

Strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxy

2013 | Journal article
DOI:

10.1016/j.jcrysgro.2012.12.087

Part of ISSN:

0022-0248

Source: Self-asserted source
Tobias F. Wietler via Crossref Metadata Search

Surfactant-mediated epitaxy of silicon germanium films on silicon (001) substrates

2013 | Journal article
DOI:

10.1016/j.tsf.2013.08.125

Part of ISSN:

0040-6090

Source: Self-asserted source
Tobias F. Wietler via Crossref Metadata Search

Carbon-mediated growth of thin, fully relaxed germanium films on silicon

2012 | Journal article
DOI:

10.1063/1.3675450

Part of ISSN:

0003-6951

Source: Self-asserted source
Tobias F. Wietler via Crossref Metadata Search

Epitaxial growth and thermal stability of silicon layers on crystalline gadolinium oxide

2010 | Journal article
DOI:

10.1016/j.vacuum.2010.01.026

Part of ISSN:

0042-207X

Source: Self-asserted source
Tobias F. Wietler via Crossref Metadata Search

Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxy

2010 | Journal article
DOI:

10.1016/j.tsf.2009.09.139

Part of ISSN:

0040-6090

Source: Self-asserted source
Tobias F. Wietler via Crossref Metadata Search

Development of Multi-Step Procedure for Epitaxial Growth of Crystalline Silicon on Rare-Earth-Metal Oxide for SOI-Applications

2009 | Journal article
DOI:

10.1380/ejssnt.2009.405

Part of ISSN:

1348-0391

Source: Self-asserted source
Tobias F. Wietler via Crossref Metadata Search

Epitaxial growth of Gd2O3 on surfactant-mediated grown Ge films on Si(001) substrates

2009 | Journal article
DOI:

10.1016/j.sse.2009.04.027

Part of ISSN:

0038-1101

Source: Self-asserted source
Tobias F. Wietler via Crossref Metadata Search

The Role of Thermal and Electronic Pressure in the Picosecond Acoustic Response of Femtosecond Laser-excited Solids

2009 | Journal article
DOI:

10.1557/proc-1230-mm06-03

Part of ISSN:

1946-4274

Source: Self-asserted source
Tobias F. Wietler via Crossref Metadata Search

Relaxed germanium films on silicon (110)

2008 | Journal article
DOI:

10.1016/j.tsf.2008.08.018

Part of ISSN:

0040-6090

Source: Self-asserted source
Tobias F. Wietler via Crossref Metadata Search

Tuning strain relaxation by surface morphology: Surfactant-mediated epitaxy of germanium on silicon

2008 | Journal article
DOI:

10.1016/j.apsusc.2008.07.030

Part of ISSN:

0169-4332

Source: Self-asserted source
Tobias F. Wietler via Crossref Metadata Search

Diffraction of strongly convergent X-rays from picosecond acoustic transients

2007 | Journal article
DOI:

10.1007/s00339-007-3863-6

Part of ISSN:

0947-8396

Source: Self-asserted source
Tobias F. Wietler via Crossref Metadata Search

Energy relaxation and anomalies in the thermo-acoustic response of femtosecond laser-excited Germanium

2007 | Other
DOI:

10.1007/978-3-540-68781-8_192

ISBN:

978-3-540-68779-5

Source: Self-asserted source
Tobias F. Wietler via Crossref Metadata Search

Surfactant-Mediated Epitaxy of Germanium on Structured Silicon Substrates: Towards Embedded Germanium

AIP Conference Proceedings
2007 | Conference paper
Contributors: T. F. Wietler; E. Bugiel; K. R. Hofmann
Source: Self-asserted source
Tobias F. Wietler via Crossref Metadata Search

Energy Relaxation and Anomalies in the Thermo-Acoustic Response of Femtosecond Laser-Excited Germanium

2006 | Conference paper
DOI:

10.1364/up.2006.mg5

Part of ISBN:

1-55752-810-1

Source: Self-asserted source
Tobias F. Wietler via Crossref Metadata Search

Residual strain in Ge films grown by surfactant-mediated epitaxy on Si(111) and Si(001) substrates

2006 | Journal article
DOI:

10.1016/j.mssp.2006.08.014

Part of ISSN:

1369-8001

Source: Self-asserted source
Tobias F. Wietler via Crossref Metadata Search

Surfactant-mediated epitaxy of high-quality low-doped relaxed germanium films on silicon (001)

2006 | Journal article
DOI:

10.1016/j.tsf.2005.08.410

Part of ISSN:

0040-6090

Source: Self-asserted source
Tobias F. Wietler via Crossref Metadata Search

Advances in surfactant-mediated growth of germanium on silicon: high-quality p-type Ge films on Si

2005 | Journal article
DOI:

10.1016/j.mssp.2004.09.077

Part of ISSN:

1369-8001

Source: Self-asserted source
Tobias F. Wietler via Crossref Metadata Search

CaF[sub 2]∕Si∕CaF[sub 2] resonant tunneling diodes grown by B surfactant-mediated epitaxy

2005 | Journal article
DOI:

10.1063/1.1853522

Part of ISSN:

0003-6951

Source: Self-asserted source
Tobias F. Wietler via Crossref Metadata Search

Surfactant-mediated epitaxy of relaxed low-doped Ge films on Si(001) with low defect densities

2005 | Journal article
DOI:

10.1063/1.2120900

Part of ISSN:

0003-6951

Source: Self-asserted source
Tobias F. Wietler via Crossref Metadata Search

Boron surfactant enhanced growth of thin Si films on CaF[sub 2]∕Si

2004 | Journal article
DOI:

10.1116/1.1789215

Part of ISSN:

0734-2101

Source: Self-asserted source
Tobias F. Wietler via Crossref Metadata Search

A cadmium-free CuInSe2 superstrate solar cell fabricated by electrodeposition using a ITO/In2Se3/CuInSe2/Au structure

1999 | Journal article
DOI:

10.1002/(sici)1099-159x(199903/04)7:2<129::aid-pip252>3.0.co;2-r

Part of ISSN:

1062-7995

Source: Self-asserted source
Tobias F. Wietler via Crossref Metadata Search

Influence Of Sb Induced Surface Faceting On Structural Properties Of Relaxed Ge Films On Si(001)

Conference paper
DOI:

10.1063/1.3295345

Source: Self-asserted source
Tobias F. Wietler via Crossref Metadata Search

Relaxed Germanium on Porous Silicon Substrates

Conference paper
DOI:

10.1109/istdm.2012.6222502

Part of ISBN:

978-1-4577-1865-6

Source: Self-asserted source
Tobias F. Wietler via Crossref Metadata Search