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Works (17)

A Variation-Tolerant, Stable, Low-Power 6T SRAM Cell in 32-nm CNTFET Technology

Circuits, Systems, and Signal Processing
2025-04 | Journal article
DOI: 10.1007/s00034-024-02922-9
Contributors: Elangovan Mani; Ahmed Elbarbary; Mohammed A. El-Meligy; Haitham A. Mahmoud
Source: check_circle
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Investigation of PNN Inverter-Based Low PDP 12T GNRFET Full Adder for VLSI Signal Processing Applications

Journal of Circuits, Systems and Computers
2025-02 | Journal article
DOI: 10.1142/S0218126625500859
Contributors: K. R. Radhakrishnan; J. Ramesh; M. Elangovan
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A FinFET‐Based Low‐Power Static Random Access Memory Cell With Improved Stability

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
2024-11 | Journal article
DOI: 10.1002/jnm.70002
Contributors: Gautam Rana; Ashish Sachdeva; M. Elangovan; Kulbhushan Sharma
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Single Ended Read Decoupled High Stable 9T CNTFET SRAM for Low Power Applications

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
2024-11 | Journal article
DOI: 10.1002/jnm.3318
Contributors: M. Elangovan; E. Akash; Mohammed El‐Meligy; Mohamed Sharaf
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Static Approximate Modified Mirror—Full Adder for High Speed and Low Power Operations Using 32 nm CNTFET Technology

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
2024-11 | Journal article
DOI: 10.1002/jnm.3320
Contributors: Sagar Juneja; M. Elangovan; Kulbhushan Sharma
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A low-power SRAM design with enhanced stability and I ON /I OFF ratio in FinFET technology for wearable device applications

International Journal of Electronics
2024-10-02 | Journal article
DOI: 10.1080/00207217.2023.2238326
Contributors: Erfan Abbasian; Shilpi Birla; Ashish Sachdeva; Elangovan Mani
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A Low-Energy, Stable, Single-Bitline Accessed FinFET 9T-SRAM

Circuits, Systems, and Signal Processing
2024-08 | Journal article
DOI: 10.1007/s00034-024-02718-x
Contributors: Erfan Abbasian; Maryam Nayeri; Elangovan Mani
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Low‐power FinFET based boost converter design using dynamic threshold body biasing technique

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
2024-03 | Journal article
DOI: 10.1002/jnm.3165
Contributors: Kulbhushan Sharma; Sandeep Thakur; M. Elangovan; Ashish Sachdeva
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Single ended 12T cntfet sram cell with high stability for low power smart device applications

e-Prime - Advances in Electrical Engineering, Electronics and Energy
2024-03 | Journal article
DOI: 10.1016/j.prime.2024.100479
Contributors: S. Jayanthi; P. Raja; M. Elangovan; T.S. Murugesh
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A FinFET-based low-power, stable 8T SRAM cell with high yield

AEU - International Journal of Electronics and Communications
2024-02 | Journal article
DOI: 10.1016/j.aeue.2023.155102
Contributors: Elangovan Mani; Padmaja Nimmagadda; Shaik Javid Basha; Mohammed A. El-Meligy; Haitham A. Mahmoud
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Crossref

High-Stability and High-Speed 11T CNTFET SRAM Cell for MIMO Applications

Journal of Circuits, Systems and Computers
2023-11-30 | Journal article
DOI: 10.1142/S0218126623502912
Contributors: M. Elangovan; G. Saravanan; S. Jayanthi; P. Raja; Kulbhushan Sharma; S. Nireshkumar
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Crossref

Diode Connected Transistor-Based Low PDP Adiabatic Full Adder in 7 nm FINFET Technology for MIMO Applications

Journal of Circuits, Systems and Computers
2023-05-30 | Journal article
DOI: 10.1142/S0218126623501347
Contributors: A. Venkatesan; P. T. Vanathi; M. Elangovan
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Design of High Stability and Low Power 7T SRAM Cell in 32-NM CNTFET Technology

Journal of Circuits, Systems and Computers
2022-09-15 | Journal article
DOI: 10.1142/S0218126622502334
Contributors: M. Elangovan; M. Muthukrishnan
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Design of high stability, low power and high speed 12T SRAM cell in 32-nm CNTFET technology

AEU - International Journal of Electronics and Communications
2022-07 | Journal article
DOI: 10.1016/j.aeue.2022.154308
Part of ISSN: 1434-8411
Source: Self-asserted source
elangovan mani

A Low-Power and High-Stability 8T SRAM Cell with Diode-Connected Transistors

Journal of Circuits, Systems and Computers
2022-05-30 | Journal article
DOI: 10.1142/S0218126622501547
Contributors: M. Elangovan; M. Muthukrishnan
Source: check_circle
Crossref

High Stable and Low Power 10T CNTFET SRAM Cell

Journal of Circuits, Systems and Computers
2020-08 | Journal article
DOI: 10.1142/S0218126620501583
Contributors: M. Elangovan; K. Gunavathi
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Crossref

High Stable and Low Power 8T CNTFET SRAM Cell

Journal of Circuits, Systems and Computers
2020-04-13 | Journal article
DOI: 10.1142/S0218126620500802
Contributors: M. Elangovan; K. Gunavathi
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