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Scopus Author ID: 7407164806

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Yamaguchi University: Ube, JP

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Yoichi Yamada

Works (50 of 162)

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Page 1 of 4

Photoluminescence Excitation Spectroscopy of Stimulated Emission from AlGaN‐Based Multiple Quantum Wells with an Emission Wavelength Around 280 nm

physica status solidi (b)
2024-11 | Journal article
DOI: 10.1002/pssb.202400020
Contributors: Hideaki Murotani; Kunio Himeno; Hayate Ohkawara; Kaichi Tani; Satoshi Kurai; Narihito Okada; Noritoshi Maeda; Muhammad Ajmal Khan; Hideki Hirayama; Yoichi Yamada
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Crossref

Temperature‐ and Excitation Power Density‐Resolved Photoluminescence of AlGaN‐Based Multiple Quantum Wells Emitting in the Spectral Range of 220–260 nm

physica status solidi (b)
2024-11 | Journal article
DOI: 10.1002/pssb.202400021
Contributors: Hideaki Murotani; Kosuke Inai; Kunio Himeno; Kaichi Tani; Hiromasa Hayashi; Satoshi Kurai; Narihito Okada; Kenjiro Uesugi; Hideto Miyake; Yoichi Yamada
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Crossref

Fabrication of high-quality Al-polar and N-polar AlN templates through self-forming tiny-pit layers and polarity inversion

Journal of Applied Physics
2024-07-14 | Journal article
DOI: 10.1063/5.0198321
Contributors: Narihito Okada; Ryota Hidaka; Taketo Kowaki; Takahiro Saito; Yoshihiro Sugawara; Daisaku Yokoe; Yongzhao Yao; Yukari Ishikawa; Satoshi Kurai; Yoichi Yamada et al.
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Crossref

Improvement of electrical properties by insertion of AlGaN interlayer for N-polar AlGaN/AlN structures on sapphire substrates

Japanese Journal of Applied Physics
2023-11-01 | Journal article
DOI: 10.35848/1347-4065/acf8cf
Contributors: Minagi Miyamoto; Wataru Matsumura; Ryo Okuno; Syunsuke Matsuda; Koki Hanasaku; Taketo Kowaki; Daisuke Inahara; Satoshi Kurai; Narihito Okada; Yoichi Yamada
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Crossref

Optical characterization of point defects on internal quantum efficiency in AlGaN quantum wells grown on face-to-face-annealed sputtered AlN templates

AIP Advances
2023-04-01 | Journal article
DOI: 10.1063/5.0145131
Contributors: Satoshi Kurai; Megumi Fujii; Yuta Ohnishi; Ryota Oshimura; Kosuke Inai; Kunio Himeno; Narihito Okada; Kenjiro Uesugi; Hideto Miyake; Yoichi Yamada
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Crossref

Effects of GaN cap layer thickness on photoexcited carrier density in green luminescent InGaN multiple quantum wells

Japanese Journal of Applied Physics
2023-03-01 | Journal article
DOI: 10.35848/1347-4065/acc4fd
Contributors: Hideaki Murotani; Keigo Nakatsuru; Satoshi Kurai; Narihito Okada; Yoshiki Yano; Shuichi Koseki; Guanxi Piao; Yoichi Yamada
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Crossref

Long wavelength red to green emissions from {11 2¯ 2} semipolar multi-quantum wells on fully relaxed InGaN underlayer

Japanese Journal of Applied Physics
2023-01-01 | Journal article
DOI: 10.35848/1347-4065/ac9ac0
Contributors: Yuya Tawarazako; Naoya Nishi; Atsuto Nakata; Narihito Okada; Satoshi Kurai; Yoichi Yamada; Kazuyuki Tadatomo
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Crossref

Evaluation of internal quantum efficiency and stimulated emission characteristics in AlGaN-based multiple quantum wells

Japanese Journal of Applied Physics
2021-12-01 | Journal article
DOI: 10.35848/1347-4065/ac3025
Contributors: Yoichi Yamada; Hideaki Murotani; Noritoshi Maeda; M. Ajmal Khan; Masafumi Jo; Hideki Hirayama
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Crossref

Extremely high internal quantum efficiency of AlGaN-based quantum wells on face-to-face annealed sputter-deposited AlN templates

Applied Physics Express
2021-12-01 | Journal article
DOI: 10.35848/1882-0786/ac3802
Contributors: Hideaki Murotani; Atsushi Fujii; Ryota Oshimura; Takafumi Kusaba; Kenjiro Uesugi; Hideto Miyake; Yoichi Yamada
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Crossref

Beyond 53% internal quantum efficiency in a AlGaN quantum well at 326 nm UVA emission and single-peak operation of UVA LED

Optics Letters
2020 | Journal article
DOI: 10.1364/OL.376894
EID:

2-s2.0-85077809810

Part of ISSN: 15394794 01469592
Contributors: Ajmal Khan, M.; Takeda, R.; Yamada, Y.; Maeda, N.; Jo, M.; Hirayama, H.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

Correlation between excitons recombination dynamics and internal quantum efficiency of AlGaN-based UV-A multiple quantum wells

Journal of Applied Physics
2020 | Journal article
DOI: 10.1063/5.0015554
EID:

2-s2.0-85092302438

Part of ISSN: 10897550 00218979
Contributors: Murotani, H.; Miyoshi, H.; Takeda, R.; Nakao, H.; Ajmal Khan, M.; Maeda, N.; Jo, M.; Hirayama, H.; Yamada, Y.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

Erratum: Beyond 53% internal quantum efficiency in a AlGaN quantum well at 326 nm UVA emission and single-peak operation of UVA LED: Publisher's note (Opt. Lett. (2020) 45: 495 DOI: 10.1364/OL.376894)

Optics Letters
2020 | Journal article
DOI: 10.1364/OL.395571
EID:

2-s2.0-85084914911

Part of ISSN: 15394794 01469592
Contributors: Khan, M.A.; Takeda, R.; Yamada, Y.; Maeda, N.; Jo, M.; Hirayama, H.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

External Quantum Efficiency of 6.5% at 300 nm Emission and 4.7% at 310 nm Emission on Bare Wafer of AlGaN-Based UVB LEDs

ACS Applied Electronic Materials
2020 | Journal article
DOI: 10.1021/acsaelm.0c00172
EID:

2-s2.0-85090466797

Part of ISSN: 26376113
Contributors: Khan, M.A.; Itokazu, Y.; Maeda, N.; Jo, M.; Yamada, Y.; Hirayama, H.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

High internal quantum efficiency and optically pumped stimulated emission in AlGaN-based UV-C multiple quantum wells

Applied Physics Letters
2020 | Journal article
DOI: 10.1063/5.0027697
EID:

2-s2.0-85094608600

Part of ISSN: 00036951
Contributors: Murotani, H.; Tanabe, R.; Hisanaga, K.; Hamada, A.; Beppu, K.; Maeda, N.; Khan, M.A.; Jo, M.; Hirayama, H.; Yamada, Y.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

13 mW operation of a 295-310 nm AlGaN UV-B LED with a p-AlGaN transparent contact layer for real world applications

Journal of Materials Chemistry C
2019 | Journal article
DOI: 10.1039/C8TC03825B
EID:

2-s2.0-85059057334

Part of ISSN: 20507526 20507534
Contributors: Khan, M.A.; Maeda, N.; Jo, M.; Akamatsu, Y.; Tanabe, R.; Yamada, Y.; Hirayama, H.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

Analysis of efficiency curves in near-UV, blue, and green-emitting InGaN-based multiple quantum wells using rate equations of exciton recombination

Japanese Journal of Applied Physics
2019 | Journal article
DOI: 10.7567/1347-4065/ab040b
EID:

2-s2.0-85070737381

Part of ISSN: 13474065 00214922
Contributors: Murotani, H.; Shibuya, K.; Yoneda, A.; Hashiguchi, Y.; Miyoshi, H.; Kurai, S.; Okada, N.; Tadatomo, K.; Yano, Y.; Tabuchi, T. et al.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

Effects of saturation of nonradiative recombination centers on internal quantum efficiency in InGaN light-emitting diodes

Japanese Journal of Applied Physics
2019 | Journal article
DOI: 10.7567/1347-4065/aaec8e
EID:

2-s2.0-85059848748

Part of ISSN: 13474065 00214922
Contributors: Murotani, H.; Yamada, Y.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

Temperature-dependent cathodoluminescence mapping of ingan epitaxial layers with different in compositions

Japanese Journal of Applied Physics
2019 | Journal article
DOI: 10.7567/1347-4065/ab0cfb
EID:

2-s2.0-85070769449

Part of ISSN: 13474065 00214922
Contributors: Kurai, S.; Wakamatsu, A.; Yamada, Y.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

Cathodoluminescence study on local high-energy emissions at dark spots in AlGaN/AlGaN multiple quantum wells

Japanese Journal of Applied Physics
2018 | Journal article
DOI: 10.7567/JJAP.57.060311
EID:

2-s2.0-85047897268

Part of ISSN: 13474065 00214922
Contributors: Kurai, S.; Imura, N.; Jin, L.; Miyake, H.; Hiramatsu, K.; Yamada, Y.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

Nanoscopic spectroscopy of potential barriers formed around V-pits in InGaN/GaN multiple quantum wells on moderate temperature GaN pit expansion layers

Journal of Applied Physics
2018 | Journal article
DOI: 10.1063/1.5043578
EID:

2-s2.0-85052944125

Part of ISSN: 10897550 00218979
Contributors: Kurai, S.; Okawa, K.; Makio, R.; Nobata, G.; Gao, J.; Sugimoto, K.; Okada, N.; Tadatomo, K.; Yamada, Y.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

Potential Barrier Formed Around Dislocations in InGaN Quantum Well Structures by Spot Cathodoluminescence Measurements

Physica Status Solidi (B) Basic Research
2018 | Journal article
DOI: 10.1002/pssb.201700358
EID:

2-s2.0-85046887039

Part of ISSN: 15213951 03701972
Contributors: Kurai, S.; Higaki, S.; Imura, N.; Okawa, K.; Makio, R.; Okada, N.; Tadatomo, K.; Yamada, Y.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

Separation of effects of InGaN/GaN superlattice on performance of light-emitting diodes using mid-temperature-grown GaN layer

Japanese Journal of Applied Physics
2018 | Journal article
DOI: 10.7567/JJAP.57.062101
EID:

2-s2.0-85047944890

Part of ISSN: 13474065 00214922
Contributors: Sugimoto, K.; Okada, N.; Kurai, S.; Yamada, Y.; Tadatomo, K.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

Spatially Resolved Spectroscopy of Blue and Green InGaN Quantum Wells by Scanning Near-Field Optical Microscopy

Physica Status Solidi (B) Basic Research
2018 | Journal article
DOI: 10.1002/pssb.201700322
EID:

2-s2.0-85046884922

Part of ISSN: 15213951 03701972
Contributors: Kurai, S.; Mihara, R.; Nobata, G.; Okawa, K.; Okada, N.; Tadatomo, K.; Yano, Y.; Tabuchi, T.; Matsumoto, K.; Yamada, Y.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

Temperature dependence of excitonic transitions in Al<inf>0.60</inf>Ga<inf>0.40</inf>N/Al<inf>0.70</inf>Ga<inf>0.30</inf>N multiple quantum wells from 4 to 750 K

Journal of Applied Physics
2018 | Journal article
DOI: 10.1063/1.5023996
EID:

2-s2.0-85048013816

Part of ISSN: 10897550 00218979
Contributors: Murotani, H.; Hayakawa, Y.; Ikeda, K.; Miyake, H.; Hiramtsu, K.; Yamada, Y.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

Temperature Dependence of Stokes Shifts of Excitons and Biexcitons in Al<inf>0.61</inf>Ga<inf>0.39</inf>N Epitaxial Layer

Physica Status Solidi (B) Basic Research
2018 | Journal article
DOI: 10.1002/pssb.201700374
EID:

2-s2.0-85040987289

Part of ISSN: 15213951 03701972
Contributors: Murotani, H.; Ikeda, K.; Tsurumaru, T.; Fujiwara, R.; Kurai, S.; Miyake, H.; Hiramatsu, K.; Yamada, Y.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

Confinement-enhanced biexciton binding energy in AlGaN-based quantum wells

Applied Physics Express
2017 | Journal article
DOI: 10.7567/APEX.10.051003
EID:

2-s2.0-85018977845

Part of ISSN: 18820786 18820778
Contributors: Nakamura, K.; Fukuno, T.; Miyake, H.; Hiramatsu, K.; Yamada, Y.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

High-temperature photoluminescence and photoluminescence excitation spectroscopy of Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells

Applied Physics Express
2017 | Journal article
DOI: 10.7567/APEX.10.021002
EID:

2-s2.0-85011632746

Part of ISSN: 18820786 18820778
Contributors: Murotani, H.; Nakamura, K.; Fukuno, T.; Miyake, H.; Hiramatsu, K.; Yamada, Y.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

Cerium oxide and hydrogen co-doped indium oxide films for high-efficiency silicon heterojunction solar cells

Solar Energy Materials and Solar Cells
2016 | Journal article
DOI: 10.1016/j.solmat.2016.01.005
EID:

2-s2.0-84955505845

Part of ISSN: 09270248
Contributors: Kobayashi, E.; Watabe, Y.; Yamamoto, T.; Yamada, Y.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

Microscopic potential fluctuations in Si-doped AlGaN epitaxial layers with various AlN molar fractions and Si concentrations

Journal of Applied Physics
2016 | Journal article
DOI: 10.1063/1.4939864
EID:

2-s2.0-84954488490

Part of ISSN: 10897550 00218979
Contributors: Kurai, S.; Miyake, H.; Hiramatsu, K.; Yamada, Y.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

Controlling potential barrier height by changing V-shaped pit size and the effect on optical and electrical properties for InGaN/GaN based light-emitting diodes

Journal of Applied Physics
2015 | Journal article
DOI: 10.1063/1.4905914
EID:

2-s2.0-84923692811

Part of ISSN: 10897550 00218979
Contributors: Okada, N.; Kashihara, H.; Sugimoto, K.; Yamada, Y.; Tadatomo, K.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

Excitation density dependence of radiative and nonradiative recombination lifetimes in InGaN/GaN multiple quantum wells

Physica Status Solidi (B) Basic Research
2015 | Journal article
DOI: 10.1002/pssb.201451491
EID:

2-s2.0-84929083743

Part of ISSN: 15213951 03701972
Contributors: Murotani, H.; Yamada, Y.; Honda, Y.; Amano, H.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

Binding energy of localized biexcitons in AlGaN-based quantum wells

Applied Physics Express
2014 | Journal article
DOI: 10.7567/APEX.7.122101
EID:

2-s2.0-84916614172

Part of ISSN: 18820786 18820778
Contributors: Hayakawa, Y.; Fukuno, T.; Nakamura, K.; Miyake, H.; Hiramatsu, K.; Yamada, Y.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

Inhomogeneous distribution of defect-related emission in Si-doped AlGaN epitaxial layers with different Al content and Si concentration

Journal of Applied Physics
2014 | Journal article
DOI: 10.1063/1.4864020
EID:

2-s2.0-84904426497

Part of ISSN: 10897550 00218979
Contributors: Kurai, S.; Ushijima, F.; Miyake, H.; Hiramatsu, K.; Yamada, Y.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

Recombination dynamics and internal quantum efficiency in InGaN

Physica Status Solidi (C) Current Topics in Solid State Physics
2014 | Journal article
DOI: 10.1002/pssc.201300437
EID:

2-s2.0-84898538393

Part of ISSN: 16101642 18626351
Contributors: Murotani, H.; Andoh, H.; Tsukamoto, T.; Sugiura, T.; Yamada, Y.; Tabata, T.; Honda, Y.; Yamaguchi, M.; Amano, H.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

Si concentration dependence of structural inhomogeneities in Si-doped Al<inf>x</inf>Ga<inf>1-x</inf>N/Al<inf>y</inf>Ga<inf>1-y</inf>N multiple quantum well structures (x = 0.6) and its relationship with internal quantum efficiency

Journal of Applied Physics
2014 | Journal article
DOI: 10.1063/1.4904847
EID:

2-s2.0-84919665754

Part of ISSN: 10897550 00218979
Contributors: Kurai, S.; Anai, K.; Miyake, H.; Hiramatsu, K.; Yamada, Y.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

Time and spatially resolved luminescence spectroscopy of ZnO nanostructures

Springer Series in Materials Science
2014 | Book
DOI: 10.1007/978-81-322-1160-0_9
EID:

2-s2.0-84884242873

Part of ISSN: 0933033X
Contributors: Murotani, H.; Yamada, Y.; Nakamura, D.; Okada, T.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

Cathodoluminescence study of optical inhomogeneity in si-doped algan epitaxial layers grown by low-pressure metalorganic vapor-phase epitaxy

Japanese Journal of Applied Physics
2013 | Journal article
DOI: 10.7567/JJAP.52.08JL07
EID:

2-s2.0-84883139272

Part of ISSN: 00214922 13474065
Contributors: Kurai, S.; Ushijima, F.; Yamada, Y.; Miyake, H.; Hiramatsu, K.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

Effects of exciton localization on internal quantum efficiency of InGaN nanowires

Journal of Applied Physics
2013 | Journal article
DOI: 10.1063/1.4825124
EID:

2-s2.0-84886462891

Part of ISSN: 00218979
Contributors: Murotani, H.; Yamada, Y.; Tabata, T.; Honda, Y.; Yamaguchi, M.; Amano, H.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

Emission wavelength dependence of internal quantum efficiency in InGaN nanowires

Japanese Journal of Applied Physics
2013 | Journal article
DOI: 10.7567/JJAP.52.08JE10
EID:

2-s2.0-84880172002

Part of ISSN: 00214922 13474065
Contributors: Murotani, H.; Andoh, H.; Tsukamoto, T.; Sugiura, T.; Yamada, Y.; Tabata, T.; Honda, Y.; Yamaguchi, M.; Amano, H.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

Fabrication and evaluation of GaN layer composed of m- and {1011} facet structure

Japanese Journal of Applied Physics
2013 | Journal article
DOI: 10.7567/JJAP.52.01AF06
EID:

2-s2.0-84872859091

Part of ISSN: 00214922 13474065
Contributors: Okada, N.; Takami, M.; Yamada, Y.; Tadatomo, K.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

AlN homoepitaxial growth on sublimation-AlN substrate by low-pressure HVPE

Journal of Crystal Growth
2012 | Journal article
DOI: 10.1016/j.jcrysgro.2011.12.025
EID:

2-s2.0-84861586267

Part of ISSN: 00220248
Contributors: Nomura, T.; Okumura, K.; Miyake, H.; Hiramatsu, K.; Eryu, O.; Yamada, Y.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

Correlation between in-plane strain and optical polarization of Si-doped AlGaN epitaxial layers as a function of Al content and Si concentration

Journal of Applied Physics
2012 | Journal article
DOI: 10.1063/1.4743016
EID:

2-s2.0-84865217225

Part of ISSN: 00218979
Contributors: Kurai, S.; Shimomura, K.; Murotani, H.; Yamada, Y.; Miyake, H.; Hiramatsu, K.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

Dependence of internal quantum efficiency on doping region and Si concentration in Al-rich AlGaN quantum wells

Applied Physics Letters
2012 | Journal article
DOI: 10.1063/1.4739431
EID:

2-s2.0-84864463075

Part of ISSN: 00036951
Contributors: Murotani, H.; Akase, D.; Anai, K.; Yamada, Y.; Miyake, H.; Hiramatsu, K.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

Internal quantum efficiency and nonradiative recombination rate in InGaN-based near-ultraviolet light-emitting diodes

Japanese Journal of Applied Physics
2012 | Journal article
DOI: 10.1143/JJAP.51.072102
EID:

2-s2.0-84863789114

Part of ISSN: 00214922 13474065
Contributors: Kohno, T.; Sudo, Y.; Yamauchi, M.; Mitsui, K.; Kudo, H.; Okagawa, H.; Yamada, Y.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

Photoluminescence due to inelastic biexciton scattering from an Al <inf>0.61</inf>Ga <inf>0.39</inf>N ternary alloy epitaxial layer at room temperature

Applied Physics Express
2012 | Journal article
DOI: 10.1143/APEX.5.072401
EID:

2-s2.0-84863734085

Part of ISSN: 18820778 18820786
Contributors: Furutani, Y.; Kittaka, R.; Miyake, H.; Hiramatsu, K.; Yamada, Y.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

Spatial inhomogeneity of aluminum content in air-bridged lateral epitaxially grown AlGaN ternary alloy films probed by cross-sectional scanning near-field optical microscopy

Japanese Journal of Applied Physics
2012 | Journal article
DOI: 10.1143/JJAP.51.035604
EID:

2-s2.0-84858138984

Part of ISSN: 00214922 13474065
Contributors: Ishibashi, A.; Murotani, H.; Yokogawa, T.; Yamada, Y.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

Structural and optical evaluation of InGaN/GaN multi-quantum wells on template consisting of in-plane alternately arranged relaxed InGaN and GaN

Journal of Applied Physics
2012 | Journal article
DOI: 10.1063/1.3684606
EID:

2-s2.0-84857856593

Part of ISSN: 00218979
Contributors: Okada, N.; Yamada, Y.; Tadatomo, K.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

Bowing of biexciton binding in Al<inf>x</inf>Ga<inf>1-x</inf>N ternary alloys

Proceedings of SPIE - The International Society for Optical Engineering
2011 | Conference paper
DOI: 10.1117/12.873265
EID:

2-s2.0-79955765978

Part of ISSN: 0277786X
Contributors: Yamada, Y.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

Huge binding energy of localized biexcitons in Al-rich Al <inf>x</inf>Ga<inf>1-x</inf>N ternary alloys

Applied Physics Letters
2011 | Journal article
DOI: 10.1063/1.3559226
EID:

2-s2.0-79952092277

Part of ISSN: 00036951
Contributors: Kittaka, R.; Muto, H.; Murotani, H.; Yamada, Y.; Miyake, H.; Hiramatsu, K.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier

Recombination dynamics of localized excitons in Al<inf>x</inf>Ga<inf>1-x</inf>N (0.37&lt;x&lt;0.81) ternary alloys

Physica Status Solidi (C) Current Topics in Solid State Physics
2011 | Journal article
DOI: 10.1002/pssc.201000899
EID:

2-s2.0-79960735454

Part of ISSN: 18626351 16101642
Contributors: Murotani, H.; Kittaka, R.; Kurai, S.; Yamada, Y.; Miyake, H.; Hiramatsu, K.
Source: Self-asserted source
Yoichi Yamada via Scopus - Elsevier
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