Personal information

No personal information available

Activities

Works (11)

Methodology for the investigation of threading dislocations as a source of vertical leakage in AlGaN/GaN-HEMT heterostructures for power devices

Journal of Applied Physics
2019 | Journal article
Source: Self-asserted source
Andreas Lesnik

Two charge states of the $\mathrmC_\mathrmN$ acceptor in GaN: Evidence from photoluminescence

Phys. Rev. B
2018 | Journal article
Source: Self-asserted source
Andreas Lesnik

Leakage currents and Fermi-level shifts in GaN layers upon iron and carbon-doping

Journal of Applied Physics
2017 | Journal article
EID:

2-s2.0-85024134448

Contributors: Fariza, A.; Lesnik, A.; Neugebauer, S.; Wieneke, M.; Hennig, J.; Bläsing, J.; Witte, H.; Dadgar, A.; Strittmatter, A.
Source: Self-asserted source
Andreas Lesnik via Scopus - Elsevier

Observation of individual stacking faults in GaN microcrystals by x-ray nanodiffraction

Applied Physics Letters
2017 | Journal article
EID:

2-s2.0-85016138619

Contributors: Holý, V.; Kriegner, D.; Lesnik, A.; Bläsing, J.; Wieneke, M.; Dadgar, A.; Harcuba, P.
Source: Self-asserted source
Andreas Lesnik via Scopus - Elsevier

Properties of C-doped GaN

Physica Status Solidi (B) Basic Research
2017 | Journal article
EID:

2-s2.0-85007324866

Contributors: Lesnik, A.; Hoffmann, M.P.; Fariza, A.; Bläsing, J.; Witte, H.; Veit, P.; Hörich, F.; Berger, C.; Hennig, J.; Dadgar, A. et al.
Source: Self-asserted source
Andreas Lesnik via Scopus - Elsevier

Twin domain imaging in topological insulator Bi<inf>2</inf>Te<inf>3</inf>and Bi<inf>2</inf>Se<inf>3</inf>epitaxial thin films by scanning X-ray nanobeam microscopy and electron backscatter diffraction

Journal of Applied Crystallography
2017 | Journal article
EID:

2-s2.0-85017179519

Contributors: Kriegner, D.; Harcuba, P.; Veselý, J.; Lesnik, A.; Bauer, G.; Springholz, G.; Holý, V.
Source: Self-asserted source
Andreas Lesnik via Scopus - Elsevier

Metalorganic chemical vapor phase epitaxy of narrow-band distributed Bragg reflectors realized by GaN:Ge modulation doping

Journal of Crystal Growth
2016 | Journal article
EID:

2-s2.0-84957072467

Contributors: Berger, C.; Lesnik, A.; Zettler, T.; Schmidt, G.; Veit, P.; Dadgar, A.; Bläsing, J.; Christen, J.; Strittmatter, A.
Source: Self-asserted source
Andreas Lesnik via Scopus - Elsevier

On reduction of current leakage in GaN by carbon-doping

Applied Physics Letters
2016 | Journal article
EID:

2-s2.0-84999028711

Contributors: Fariza, A.; Lesnik, A.; Bläsing, J.; Hoffmann, M.P.; Hörich, F.; Veit, P.; Witte, H.; Dadgar, A.; Strittmatter, A.
Source: Self-asserted source
Andreas Lesnik via Scopus - Elsevier

Enhanced sheet carrier densities in polarization controlled AlInN/AlN/GaN/InGaN field-effect transistor on Si (111)

AIP Advances
2015 | Journal article
EID:

2-s2.0-84937459816

Contributors: Hennig, J.; Dadgar, A.; Witte, H.; Bläsing, J.; Lesnik, A.; Strittmatter, A.; Krost, A.
Source: Self-asserted source
Andreas Lesnik via Scopus - Elsevier

Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality

Journal of Crystal Growth
2015 | Journal article
EID:

2-s2.0-84922512253

Contributors: Berger, C.; Dadgar, A.; Bläsing, J.; Lesnik, A.; Veit, P.; Schmidt, G.; Hempel, T.; Christen, J.; Krost, A.; Strittmatter, A.
Source: Self-asserted source
Andreas Lesnik via Scopus - Elsevier

Characterization of AlInN/AlN/GaN FET structures using x-ray diffraction, x-ray reflectometry and grazing incidence x-ray fluorescence analysis

Journal of Physics D: Applied Physics
2014 | Journal article
EID:

2-s2.0-84906346440

Contributors: Lesnik, A.; Bläsing, J.; Hennig, J.; Dadgar, A.; Krost, A.
Source: Self-asserted source
Andreas Lesnik via Scopus - Elsevier