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Scopus Author ID: 57215215045

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Works (18)

Intrinsic room-temperature multiferroicity in a two-dimensional TiCr2O4 semiconductor with out-of-plane magnetic anisotropy and vertical piezoelectricity

Physical Review B
2025-01-21 | Journal article
DOI: 10.1103/PhysRevB.111.035436
Contributors: Yiwen Zhang; Chenxi Li; Haoshen Ye; G. P. Zhang; Junting Zhang; Jianli Wang
Source: check_circle
Crossref

Ferroelectrically controlled electromagnetic and transport properties of VN2H2/Al2O3 van der Waals multiferroic heterostructures

Nanoscale
2024 | Journal article
DOI: 10.1039/D4NR01441C
Contributors: Caijia Sun; Haoshen Ye; Yijie Zhu; Leiming Chen; Dongmei Bai; Jianli Wang
Source: check_circle
Crossref

Strain-tuned room-temperature spin valve effect in the HfCr2N4 monolayer

Physical Review B
2024-10-01 | Journal article
DOI: 10.1103/PhysRevB.110.155403
Contributors: Dingwen Zhang; Haoshen Ye; Meng Su; Jianli Wang
Source: check_circle
Crossref

Double-leaf Riemann surface topological converse magnetoelectricity

Physical Review B
2024-08-14 | Journal article
DOI: 10.1103/physrevb.110.054424
Part of ISSN: 2469-9950
Part of ISSN: 2469-9969
Contributors: Ying Zhou; Haoshen Ye; Junting Zhang; Shuai Dong
Source: Self-asserted source
Ye Haoshen

Quasi-one-dimensional sliding ferroelectricity in NbI4

Physical Review B
2024-07-31 | Journal article
DOI: 10.1103/physrevb.110.024115
Part of ISSN: 2469-9950
Part of ISSN: 2469-9969
Contributors: Ning Ding; Haoshen Ye; Shuai Dong
Source: Self-asserted source
Ye Haoshen

Transition from antiferromagnetic metal to room-temperature ferromagnetic semiconductor in monolayer CrTe2 via Li adsorption

Physical Review B
2024-05-20 | Journal article
DOI: 10.1103/PhysRevB.109.195426
Contributors: Yiwen Zhang; Yifan Zhang; Haoshen Ye; Junting Zhang; Jianli Wang
Source: check_circle
Crossref

Two-dimensional HfCr2N4 semiconductor with intrinsic room-temperature ferromagnetism and enhanced conductivity via electrostatic doping

Applied Surface Science
2024-04 | Journal article
DOI: 10.1016/j.apsusc.2023.159128
Part of ISSN: 0169-4332
Contributors: Dingwen Zhang; Meng Su; Jingwen Zhang; Haoshen Ye; Jianli Wang
Source: Self-asserted source
Ye Haoshen

Controllable magnetic anisotropy and conductivity in ScCrSe3 monolayer driven by electrostatic doping

Journal of Alloys and Compounds
2024-01 | Journal article
DOI: 10.1016/j.jallcom.2023.172844
Part of ISSN: 0925-8388
Contributors: Liwei Han; Zeyi Zhang; Haoshen Ye; Leiming Chen; Jianli Wang
Source: Self-asserted source
Ye Haoshen

Enhanced Curie temperature and conductivity of van der Waals ferromagnet MgV<sub>2</sub>S<sub>4</sub>via electrostatic doping

Physical Chemistry Chemical Physics
2023 | Journal article
DOI: 10.1039/d2cp05294f
EID:

2-s2.0-85148250069

Part of ISSN: 14639076
Contributors: Sun, J.; Tan, Z.; Ye, H.; Bai, D.; Wang, J.
Source: Self-asserted source
Ye Haoshen via Scopus - Elsevier

Magnetic and transport properties of two-dimensional ferromagnet VSe<sub>2</sub> with Se vacancies

Journal of Magnetism and Magnetic Materials
2023 | Journal article
DOI: 10.1016/j.jmmm.2023.170683
EID:

2-s2.0-85151800303

Part of ISSN: 03048853
Contributors: Wei, M.; Ma, H.; Ye, H.; Wang, J.; Bai, D.
Source: Self-asserted source
Ye Haoshen via Scopus - Elsevier

Interface and transport properties of InN/VSi2P4 van der Waals magnetic heterostructures

Physical Review B
2023-09-12 | Journal article
DOI: 10.1103/PhysRevB.108.125413
Contributors: Yijie Zhu; Meng Su; Haoshen Ye; Dongmei Bai; Jianli Wang
Source: check_circle
Crossref

Two-orbital spin-fermion model study of ferromagnetism in the honeycomb lattice

Physical Review B
2023-09-01 | Journal article
DOI: 10.1103/physrevb.108.094401
Part of ISSN: 2469-9950
Part of ISSN: 2469-9969
Contributors: Kaidi Xu; Di Hu; Jun Chen; Haoshen Ye; Lin Han; Shan-shan Wang; Shuai Dong
Source: Self-asserted source
Ye Haoshen

Superior ferroelectricity and nonlinear optical response in a hybrid germanium iodide hexagonal perovskite

Nature Communications
2023-05-19 | Journal article
DOI: 10.1038/s41467-023-38590-7
Part of ISSN: 2041-1723
Contributors: Kun Ding; Haoshen Ye; Chang-Yuan Su; Yu-An Xiong; Guowei Du; YuMeng You; Zhi-Xu Zhang; Shuai Dong; Yi Zhang; Da-Wei Fu
Source: Self-asserted source
Ye Haoshen

Room-temperature spin valve effect in the TiCr2N4 monolayer

Journal of Materials Chemistry C
2022 | Journal article
DOI: 10.1039/d2tc02794a
Part of ISSN: 2050-7526
Part of ISSN: 2050-7534
Contributors: Ye Haoshen
Source: Self-asserted source
Ye Haoshen
grade
Preferred source (of 3)‎

Magnetic and Electronic Properties of AlN/VSe2 van der Waals Heterostructures from Combined First-Principles and Schrödinger-Poisson Simulations

Physical Review Applied
2022-08-04 | Journal article
DOI: 10.1103/physrevapplied.18.024012
Part of ISSN: 2331-7019
Contributors: Ye Haoshen
Source: Self-asserted source
Ye Haoshen
grade
Preferred source (of 2)‎

Significant enhancement of magnetic anisotropy and conductivity in GaN/CrI3 van der Waals heterostructures via electrostatic doping

Physical Review B
2021-08-18 | Journal article
DOI: 10.1103/physrevb.104.075433
Part of ISSN: 2469-9950
Part of ISSN: 2469-9969
Source: Self-asserted source
Ye Haoshen
grade
Preferred source (of 2)‎

Spin valve effect in VN/GaN/VN van der Waals heterostructures

Physical Review B
2021-01-22 | Journal article
DOI: 10.1103/physrevb.103.035423
Part of ISSN: 2469-9950
Part of ISSN: 2469-9969
Source: Self-asserted source
Ye Haoshen
grade
Preferred source (of 2)‎

Strain and electric field tuned electronic properties of BAs/MoSe2 van der Waals heterostructures for alternative electrodes and photovoltaic cell in photocatalysis

Physica E: Low-dimensional Systems and Nanostructures
2020-02 | Journal article
DOI: 10.1016/j.physe.2020.114055
Part of ISSN: 1386-9477
Source: Self-asserted source
Ye Haoshen
grade
Preferred source (of 2)‎
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