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National Institute of Advanced Industrial Science and Technology (AIST): Tuskuba, Ibaraki, JP

Employment
Source: Self-asserted source
Kimihiko Kato

Works (50 of 85)

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Page 1 of 2

Device structure and fabrication process for silicon spin qubit realizing process-variation-robust SWAP gate operation

Japanese Journal of Applied Physics
2023-04-01 | Journal article | Author
DOI: 10.35848/1347-4065/acbcdd
Part of ISSN: 0021-4922
Part of ISSN: 1347-4065
Contributors: Hidehiro Asai; Shota IIZUKA; Tohru Mogami; Junichi Hattori; Koichi Fukuda; Tsutomu Ikegami; Kimihiko Kato; Hiroshi Oka; Takahiro Mori
Source: Self-asserted source
Kimihiko Kato

Introduction of deep level impurities, S, Se, and Zn, into Si wafers for high-temperature operation of a Si qubit

Japanese Journal of Applied Physics
2023-04-01 | Journal article | Author
DOI: 10.35848/1347-4065/acae60
Part of ISSN: 0021-4922
Part of ISSN: 1347-4065
Contributors: Yoshisuke Ban; Kimihiko Kato; Shota IIZUKA; Shigenori Murakami; Koji Ishibashi; Satoshi Moriyama; Takahiro Mori; Keiji Ono
Source: Self-asserted source
Kimihiko Kato

The functions of a reservoir offset voltage applied to physically defined p-channel Si quantum dots

Scientific Reports
2022-06-21 | Journal article
DOI: 10.1038/s41598-022-14669-x
Part of ISSN: 2045-2322
Contributors: Shimpei Nishiyama; Kimihiko Kato; Mizuki Kobayashi; Raisei Mizokuchi; Takahiro Mori; Tetsuo Kodera
Source: Self-asserted source
Kimihiko Kato

Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic MOSFET Operation

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
2022-06-12 | Conference paper
DOI: 10.1109/vlsitechnologyandcir46769.2022.9830505
Contributors: Hiroshi Oka; Takumi Inaba; Shota Iizuka; Hidehiro Asai; Kimihiko Kato; Takahiro Mori
Source: Self-asserted source
Kimihiko Kato

4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot

Scientific Reports
2021-12 | Journal article
DOI: 10.1038/s41598-021-99560-x
Part of ISSN: 2045-2322
Source: Self-asserted source
Kimihiko Kato

Electron beam lithography with negative tone resist for highly integrated silicon quantum bits

Nanotechnology
2021-11-26 | Journal article
DOI: 10.1088/1361-6528/ac201b
Part of ISSN: 0957-4484
Part of ISSN: 1361-6528
Source: Self-asserted source
Kimihiko Kato

Si bilayer tunnel field-effect transistor structure realized using tilted ion-implantation technique

Solid-State Electronics
2021-06 | Journal article
DOI: 10.1016/j.sse.2021.107993
Part of ISSN: 0038-1101
Source: Self-asserted source
Kimihiko Kato

Buried nanomagnet realizing high-speed/low-variability silicon spin qubits: implementable in error-correctable large-scale quantum computers

2021 Symposium on VLSI Circuits
2021-06-13 | Conference paper
DOI: 10.23919/vlsicircuits52068.2021.9492449
ISBN: 9784863487802
Source: Self-asserted source
Kimihiko Kato
grade
Preferred source (of 2)‎

Bilayer Tunneling Field Effect Transistors using Oxide Semiconductor/Group‐IV Semiconductor Hetero‐structures

SID Symposium Digest of Technical Papers
2021-05 | Journal article
DOI: 10.1002/sdtp.14613
Part of ISSN: 0097-966X
Part of ISSN: 2168-0159
Source: Self-asserted source
Kimihiko Kato

ON current enhancement and variability suppression in tunnel FETs by the isoelectronic trap impurity of beryllium

Japanese Journal of Applied Physics
2021-05-01 | Journal article
DOI: 10.35848/1347-4065/abd9d1
Part of ISSN: 0021-4922
Part of ISSN: 1347-4065
Source: Self-asserted source
Kimihiko Kato

RF reflectometry for readout of charge transition in a physically defined p-channel MOS silicon quantum dot

Japanese Journal of Applied Physics
2021-05-01 | Journal article
DOI: 10.35848/1347-4065/abeac1
Part of ISSN: 0021-4922
Part of ISSN: 1347-4065
Source: Self-asserted source
Kimihiko Kato

Development of Integrated Device Simulator for Quantum Bit Design: Self-consistent Calculation for Quantum Transport and Qubit Operation

2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
2021-04-08 | Conference paper
DOI: 10.1109/edtm50988.2021.9420978
ISBN: 9781728181769
Source: Self-asserted source
Kimihiko Kato
grade
Preferred source (of 2)‎

Improvement in Electrical Characteristics of ZnSnO/Si Bilayer TFET by W/Al2O3 Gate Stack

IEEE Journal of the Electron Devices Society
2020 | Journal article
DOI: 10.1109/jeds.2020.2982424
Part of ISSN: 2168-6734
Source: Self-asserted source
Kimihiko Kato

Mechanism of extraordinary gate-length dependence of quantum dot operation in isoelectronic-trap-assisted tunnel FETs

Applied Physics Express
2020-11-01 | Journal article
DOI: 10.35848/1882-0786/abc469
Part of ISSN: 1882-0778
Part of ISSN: 1882-0786
Source: Self-asserted source
Kimihiko Kato

Impact of Switching Voltage on Complementary Steep-Slope Tunnel Field Effect Transistor Circuits

IEEE Transactions on Electron Devices
2020-09 | Journal article
DOI: 10.1109/ted.2020.3010177
Part of ISSN: 0018-9383
Part of ISSN: 1557-9646
Source: Self-asserted source
Kimihiko Kato
grade
Preferred source (of 2)‎

Source engineering for bilayer tunnel field-effect transistor with hetero tunnel junction: thickness and impurity concentration

Applied Physics Express
2020-07-01 | Journal article
DOI: 10.35848/1882-0786/ab9875
Part of ISSN: 1882-0778
Part of ISSN: 1882-0786
Source: Self-asserted source
Kimihiko Kato

Toward Long-Coherence-Time Si Spin Qubit: The Origin of Low-Frequency Noise in Cryo-CMOS

2020 IEEE Symposium on VLSI Technology
2020-06 | Conference paper
DOI: 10.1109/vlsitechnology18217.2020.9265013
ISBN: 9781728164601
Source: Self-asserted source
Kimihiko Kato

Metal–oxide–semiconductor interface properties of TiN/Y2O3/Si0.62Ge0.38 gate stacks with high temperature post-metallization annealing

Journal of Applied Physics
2020-05-14 | Journal article
DOI: 10.1063/1.5144198
Part of ISSN: 0021-8979
Part of ISSN: 1089-7550
Source: Self-asserted source
Kimihiko Kato

p-Channel TFET Operation of Bilayer Structures With Type-II Heterotunneling Junction of Oxide- and Group-IV Semiconductors

IEEE Transactions on Electron Devices
2020-04 | Journal article
DOI: 10.1109/ted.2020.2975582
Part of ISSN: 0018-9383
Part of ISSN: 1557-9646
Source: Self-asserted source
Kimihiko Kato

Accurate evaluation of specific contact resistivity between InAs/Ni–InAs alloy using a multi-sidewall transmission line method

Japanese Journal of Applied Physics
2020-04-01 | Journal article
DOI: 10.35848/1347-4065/ab6cb3
Part of ISSN: 0021-4922
Part of ISSN: 1347-4065
Source: Self-asserted source
Kimihiko Kato

Fabrication and electrical characteristics of ZnSnO/Si bilayer tunneling filed-effect transistors

IEEE Journal of the Electron Devices Society
2019 | Journal article
DOI: 10.1109/jeds.2019.2933848
Part of ISSN: 2168-6734
Source: Self-asserted source
Kimihiko Kato
grade
Preferred source (of 2)‎

Re-examination of effects of sulfur treatment on Al2O3/InGaAs metal-oxide-semiconductor interface properties

Journal of Applied Physics
2019-11-14 | Journal article
DOI: 10.1063/1.5111630
Part of ISSN: 0021-8979
Part of ISSN: 1089-7550
Source: Self-asserted source
Kimihiko Kato

Fabrication of High Quality InAs-on-Lnsulator Structures by Smart Cut Process with Reuse of InAs Wafers

2019 International 3D Systems Integration Conference (3DIC)
2019-10 | Conference paper
DOI: 10.1109/3dic48104.2019.9058839
ISBN: 9781728148700
Source: Self-asserted source
Kimihiko Kato

Group IV Based Bi-Layer Tunneling Field Effect Transistor

ECS Transactions
2019-10-22 | Journal article
DOI: 10.1149/09301.0023ecst
Part of ISSN: 1938-6737
Part of ISSN: 1938-5862
Source: Self-asserted source
Kimihiko Kato

Group IV/oxide semiconductor bi-layer tunneling FET

2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
2019-10-14 | Conference paper
DOI: 10.1109/s3s46989.2019.9320690
ISBN: 9781728135236
Source: Self-asserted source
Kimihiko Kato

(Invited) Tunneling FET Device Technology for Ultra-Low Power Integrated Circuits

ECS Transactions
2019-07-03 | Journal article
DOI: 10.1149/09204.0059ecst
Part of ISSN: 1938-6737
Part of ISSN: 1938-5862
Source: Self-asserted source
Kimihiko Kato

Advanced MOS Device Technology for Low Power Logic LSI

2019 MIXDES - 26th International Conference "Mixed Design of Integrated Circuits and Systems"
2019-06 | Conference paper
DOI: 10.23919/mixdes.2019.8787197
ISBN: 9788363578169
Source: Self-asserted source
Kimihiko Kato

Impact of metal gate electrodes on electrical properties of Y2O3/Si0.78Ge0.22 gate stacks

2019-06 | Journal article
DOI: 10.1016/j.mee.2019.05.005
Part of ISSN: 0167-9317
Source: Self-asserted source
Kimihiko Kato

Improvement of SiGe MOS interface properties with a wide range of Ge contents by using TiN/Y2O3 gate stacks with TMA nassivation

2019 Symposium on VLSI Technology
2019-06 | Conference paper
DOI: 10.23919/vlsit.2019.8776523
ISBN: 9784863487192
Source: Self-asserted source
Kimihiko Kato

Bilayer tunneling field effect transistor with oxide-semiconductor and group-IV semiconductor hetero junction: Simulation analysis of electrical characteristics

2019-05 | Journal article
DOI: 10.1063/1.5088890
Part of ISSN: 2158-3226
Source: Self-asserted source
Kimihiko Kato

ZnO/Si and ZnO/Ge bilayer tunneling field effect transistors: Experimental characterization of electrical properties

2019-05-21 | Journal article
DOI: 10.1063/1.5088893
Part of ISSN: 0021-8979
Part of ISSN: 1089-7550
Source: Self-asserted source
Kimihiko Kato

Effects of ZrO2/Al2O3 Gate-Stack on the Performance of Planar-Type InGaAs TFET

2019-04 | Journal article
DOI: 10.1109/ted.2019.2897821
Part of ISSN: 0018-9383
Part of ISSN: 1557-9646
Source: Self-asserted source
Kimihiko Kato

Electrical characteristic of atomic layer deposition La2O3/Si MOSFETs with ferroelectric-type hysteresis

2019-04-01 | Journal article
DOI: 10.7567/1347-4065/aafecf
Part of ISSN: 0021-4922
Part of ISSN: 1347-4065
Source: Self-asserted source
Kimihiko Kato

Fabrication of thin body InAs-on-insulator structures by Smart Cut method with H+ implantation at room temperature

2019-04-01 | Journal article
DOI: 10.7567/1347-4065/aafa68
Part of ISSN: 0021-4922
Part of ISSN: 1347-4065
Source: Self-asserted source
Kimihiko Kato

Thermal properties of III–V on a SiC platform for photonic integrated circuits

2019-04-01 | Journal article
DOI: 10.7567/1347-4065/aafd8b
Part of ISSN: 0021-4922
Part of ISSN: 1347-4065
Source: Self-asserted source
Kimihiko Kato

Material design of oxide-semiconductor/group-IV-semiconductor bilayer tunneling field effect transistors

2019 Electron Devices Technology and Manufacturing Conference (EDTM)
2019-03 | Conference paper
DOI: 10.1109/edtm.2019.8731302
ISBN: 9781538665084
Source: Self-asserted source
Kimihiko Kato

A Novel Gate-Normal Tunneling Field-Effect Transistor With Dual-Metal Gate

2018 | Journal article
DOI: 10.1109/jeds.2018.2864581
Part of ISSN: 2168-6734
Source: Self-asserted source
Kimihiko Kato

Characterization and understanding of slow traps in GeOx-based n-Ge MOS interfaces

2018-12 | Conference paper
DOI: 10.1109/iedm.2018.8614529
ISBN: 9781728119878
Source: Self-asserted source
Kimihiko Kato

MOS Device Technology using Alternative Channel Materials for Low Power Logic LSI

2018-09 | Conference paper
DOI: 10.1109/essderc.2018.8486876
ISBN: 9781538654019
Source: Self-asserted source
Kimihiko Kato

Influence of impurity concentration in Ge sources on electrical properties of Ge/Si hetero-junction tunneling field-effect transistors

2018-08-06 | Journal article
DOI: 10.1063/1.5028529
Part of ISSN: 0003-6951
Part of ISSN: 1077-3118
Source: Self-asserted source
Kimihiko Kato

(Invited) Ultrathin-Body Ge-on-Insulator MOSFET and TFET Technologies

2018-07-20 | Journal article
DOI: 10.1149/08607.0075ecst
Part of ISSN: 1938-6737
Part of ISSN: 1938-5862
Source: Self-asserted source
Kimihiko Kato

Cost-efficient sub-lithographic patterning with tilted-ion implantation (TII)

2018-04 | Conference paper
DOI: 10.1109/vlsi-tsa.2018.8403865
ISBN: 9781538648254
Source: Self-asserted source
Kimihiko Kato

TiN/Al2O3/ZnO gate stack engineering for top-gate thin film transistors by combination of post oxidation and annealing

2018-04-16 | Journal article
DOI: 10.1063/1.5020080
Part of ISSN: 0003-6951
Part of ISSN: 1077-3118
Source: Self-asserted source
Kimihiko Kato

(Invited)Ultra-Low Power III-V-Based MOSFETs and Tunneling FETs

2018-04-10 | Journal article
DOI: 10.1149/08508.0027ecst
Part of ISSN: 1938-6737
Part of ISSN: 1938-5862
Source: Self-asserted source
Kimihiko Kato

Programming Nanoparticles in Multiscale: Optically Modulated Assembly and Phase Switching of Silicon Nanoparticle Array

2018-03-27 | Journal article
DOI: 10.1021/acsnano.8b00198
Part of ISSN: 1936-0851
Part of ISSN: 1936-086X
Source: Self-asserted source
Kimihiko Kato

Proposal and demonstration of oxide-semiconductor/(Si, SiGe, Ge) bilayer tunneling field effect transistor with type-II energy band alignment

2017-12 | Conference paper
DOI: 10.1109/iedm.2017.8268398
ISBN: 9781538635599
Source: Self-asserted source
Kimihiko Kato

III-V/Ge-based tunneling MOSFET

2017-10 | Conference paper
DOI: 10.1109/e3s.2017.8246157
ISBN: 9781538632901
Source: Self-asserted source
Kimihiko Kato

Modulation of sub-threshold properties of InGaAs MOSFETs by La2O3 gate dielectrics

2017-09 | Journal article
DOI: 10.1063/1.4999958
Part of ISSN: 2158-3226
Source: Self-asserted source
Kimihiko Kato

There's still plenty of room at the bottom — And at the Top

2017-06 | Conference paper
DOI: 10.1109/drc.2017.7999386
ISBN: 9781509063284
Source: Self-asserted source
Kimihiko Kato

Sub-lithographic Patterning via Tilted Ion Implantation for Scaling Beyond the 7-nm Technology Node

2017-01 | Journal article
DOI: 10.1109/ted.2016.2622284
Part of ISSN: 0018-9383
Part of ISSN: 1557-9646
Source: Self-asserted source
Kimihiko Kato
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