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Scopus Author ID: 55340428800

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India

Biography

I am presently working as an Assistant Professor, in Department of Electronic Science, University of Delhi. Before that, I have worked as an Assistant Professor in Shaheed Rajguru College, University of Delhi, New Delhi for 6 Years. I have earned my doctoral degree in Electronic Science, from University of Delhi South Campus in 2016. I did M.Tech in VLSI Design from CDAC Noida and M.Sc in Electronic Science from Kanpur University. I am associated with Semiconductor Device Research Lab at Delhi University South Campus where I am actively involve in doing research in the field of Micro/Nanoelectronics and bioelectronics . I have published 22 papers in reputed international journal and 25 papers in international conferences. You can visit my google scholar page and SDRL page.

https://scholar.google.com/citations?user=FgXOzIIAAAAJ&hl=en

http://sdrl-does.edsdelhi.org/profile_alumni.html

Activities

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Employment (2)

University of Delhi: New Delhi, Delhi, IN

2022-03-09 to present | Teaching and Research (Electronics)
Employment
Source: Self-asserted source
Yogesh Pratap

Shaheed Rajguru College of Applied Sciences for Women: New Delhi, Delhi, IN

2016-01-06 to 2022-03-07 | Teaching and Research (Instrumentation)
Employment
Source: Self-asserted source
Yogesh Pratap

Education and qualifications (2)

University of Delhi: New Delhi, Delhi, IN

2011-11-11 to 2016-04-26 | PhD (Electronics)
Qualification
Source: Self-asserted source
Yogesh Pratap

Guru Gobind Singh Indraprastha University: Dwarka, Delhi, IN

2009-07-01 to 2011-05-31 | M.Tech (CDAC NOIDA)
Education
Source: Self-asserted source
Yogesh Pratap

Works (40)

Dual-Channel SiC-AlGaN/GaN HEMT with a Drain-Connected Field Plate for Improved Breakdown Voltage and Analog/RF Performance

IETE Journal of Research
2025-03-04 | Journal article
DOI: 10.1080/03772063.2025.2461654
Contributors: Anshuman Singh; Sagar Bisht; Manish Kumar; Sachin Kumar; Yogesh Pratap
Source: check_circle
Crossref

Advancement in glucose concentration measurement in human blood: a surface plasmon resonance-based optical sensing approach

Journal of Optics
2024-08-17 | Journal article
DOI: 10.1007/s12596-024-02144-x
Contributors: Sagar Bisht; Anshuman Singh; Himanshu Kushwah; Yogesh Pratap
Source: check_circle
Crossref

Detection of poisonous gases using JL FinFET with conducting gate polymer

ICDCS 2022 - 2022 6th International Conference on Devices, Circuits and Systems
2022 | Conference paper
DOI: 10.1109/ICDCS54290.2022.9780853
EID:

2-s2.0-85132297195
Contributors: Sehgal, H.D.; Pratap, Y.; Kabra, S.
Source: Self-asserted source
Yogesh Pratap via Scopus - Elsevier

Small-Signal Analysis of Double-Channel AlGaN/GaN HEMT and MOSHEMT with Undoped Barrier for Microwave Applications

Journal of Electronic Materials
2022 | Journal article
DOI: 10.1007/s11664-022-09652-1
EID:

2-s2.0-85130206416

Part of ISSN: 1543186X 03615235
Contributors: Pal, P.; Pratap, Y.; Kabra, S.
Source: Self-asserted source
Yogesh Pratap via Scopus - Elsevier

T-ZnO/AlGaN/GaN HEMT Uric Acid Sensor-Sensitivity Analysis and Effect of Surface Wettability for Improved Performance

IEEE Sensors Journal
2022-06-15 | Journal article
DOI: 10.1109/JSEN.2022.3172793
Contributors: Praveen Pal; Yogesh Pratap; Sneha Kabra
Source: check_circle
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Detection of Breast Cancer Cell-MDA-MB-231 by Measuring Conductivity of Schottky Source/Drain GaN FinFET

IEEE Sensors Journal
2022-03-15 | Journal article
DOI: 10.1109/JSEN.2022.3148117
Contributors: Himani Dua Sehgal; Yogesh Pratap; Sneha Kabra
Source: check_circle
Crossref
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Dielectric Separated Independent Gates Junctionless Transistor (DSIG-JLT) For Highly Scaled Digital Logic Implementation

IEEE Transactions on Nanotechnology
2021 | Journal article
DOI: 10.1109/TNANO.2021.3066814
Contributors: Neha Garg; Yogesh Pratap; Mridula Gupta; Sneha Kabra
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Impact of Trap Charges and High Temperature on Reliability of GaAs/Al<sub>2</sub>O<sub>3</sub>-Based Junctionless FinFET

Lecture Notes in Networks and Systems
2021 | Book
DOI: 10.1007/978-981-15-8366-7_64
EID:

2-s2.0-85101538630

Part of ISSN: 23673389 23673370
Contributors: Garg, N.; Pratap, Y.; Gupta, M.; Kabra, S.
Source: Self-asserted source
Yogesh Pratap via Scopus - Elsevier

Open gate AlGaN/GaN HEMT biosensor: Sensitivity analysis and optimization

Superlattices and Microstructures
2021 | Journal article
DOI: 10.1016/j.spmi.2021.106968
EID:

2-s2.0-85108881067

Part of ISSN: 10963677 07496036
Contributors: Pal, P.; Pratap, Y.; Gupta, M.; Kabra, S.
Source: Self-asserted source
Yogesh Pratap via Scopus - Elsevier

Stability and Reliability Performance of Double Gate Junctionless Transistor (DG-JLT) 6T SRAM

ICIERA 2021 - 1st International Conference on Industrial Electronics Research and Applications, Proceedings
2021 | Conference paper
DOI: 10.1109/ICIERA53202.2021.9726766
EID:

2-s2.0-85127459092
Contributors: Garg, N.; Pratap, Y.; Kabra, S.
Source: Self-asserted source
Yogesh Pratap via Scopus - Elsevier

Performance Analysis and Optimization of Under-Gate Dielectric Modulated Junctionless FinFET Biosensor

IEEE Sensors Journal
2021-09-01 | Journal article
DOI: 10.1109/JSEN.2021.3090263
Contributors: Himani Dua Sehgal; Yogesh Pratap; Mridula Gupta; Sneha Kabra
Source: check_circle
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Analytical Modeling and Simulation of AlGaN/GaN MOS-HEMT for High Sensitive pH Sensor

IEEE Sensors Journal
2021-06-15 | Journal article
DOI: 10.1109/JSEN.2021.3069243
Contributors: Praveen Pal; Yogesh Pratap; Mridula Gupta; Sneha Kabra
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Performance Investigation of Novel Pt/Pd-SiO2 Junctionless FinFET as a High Sensitive Hydrogen Gas Sensor for Industrial Applications

IEEE Sensors Journal
2021-06-15 | Journal article
DOI: 10.1109/JSEN.2021.3067801
Contributors: Himani Dua Sehgal; Yogesh Pratap; Mridula Gupta; Sneha Kabra
Source: check_circle
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Performance evaluation of dielectric modulation and metalloid T-shaped source/drain on gate-all-around junctionless transistor for improved analog/RF application

Journal of Materials Science: Materials in Electronics
2021-04-31 | Journal article
DOI: 10.1007/s10854-021-05754-4
Contributors: Yogesh Pratap; Sachin Kumar; R. S. Gupta; Mridula Gupta
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Comparative Analysis of Junctionless FinFET and Inverted Mode FinFET as Phosphine (PH<sub>3</sub>) Gas Sensor

ICDCS 2020 - 2020 5th International Conference on Devices, Circuits and Systems
2020 | Conference paper
DOI: 10.1109/ICDCS48716.2020.243579
EID:

2-s2.0-85084661080
Contributors: Sehgal, H.D.; Pratap, Y.; Gupta, M.; Kabra, S.; Pal, P.
Source: Self-asserted source
Yogesh Pratap via Scopus - Elsevier

Performance analysis of ScAlN/GaN High Electron Mobility Transistor (HEMT) for biosensing application

ICDCS 2020 - 2020 5th International Conference on Devices, Circuits and Systems
2020 | Conference paper
DOI: 10.1109/ICDCS48716.2020.243581
EID:

2-s2.0-85084683397
Contributors: Pal, P.; Pratap, Y.; Gupta, M.; Kabra, S.; Dua Sehgal, H.
Source: Self-asserted source
Yogesh Pratap via Scopus - Elsevier

Temperature Dependent Performance Evaluation and Linearity Analysis of Double Gate-all-around (DGAA) MOSFET: an Advance Multigate Structure

Silicon
2020-11-04 | Journal article
DOI: 10.1007/s12633-019-00357-5
Contributors: Yogesh Pratap; Jay Hind Kumar Verma
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Reliability Assessment of GaAs/Al₂O₃ Junctionless FinFET in the Presence of Interfacial Layer Defects and Radiations

IEEE Transactions on Device and Materials Reliability
2020-06 | Journal article
DOI: 10.1109/TDMR.2020.2991662
Contributors: Neha Garg; Yogesh Pratap; Mridula Gupta; Sneha Kabra
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Comparative Analysis of Dielectric Modulated Junctionless FinFET Biosensor and Junctionless DG MOSFET Biosensor for Medical Instrumentation

2019 International Conference on Power Electronics, Control and Automation, ICPECA 2019 - Proceedings
2019 | Conference paper
DOI: 10.1109/ICPECA47973.2019.8975506
EID:

2-s2.0-85084516323
Contributors: Sehgal, H.D.; Pratap, Y.; Gupta, M.; Kabra, S.
Source: Self-asserted source
Yogesh Pratap via Scopus - Elsevier

Comparative analysis of oxides to improve performance of DC-MOS-HEMTs

2019 IEEE International Conference on Modeling of Systems Circuits and Devices, MOS-AK India 2019
2019 | Conference paper
DOI: 10.1109/MOS-AK.2019.8902420
EID:

2-s2.0-85076906378
Contributors: Pal, P.; Pratap, Y.; Gupta, M.; Kabra, S.
Source: Self-asserted source
Yogesh Pratap via Scopus - Elsevier

Impact of different localized trap charge profiles on the short channel double gate junctionless nanowire transistor based inverter and Ring Oscillator circuit

AEU - International Journal of Electronics and Communications
2019 | Journal article
DOI: 10.1016/j.aeue.2019.06.014
EID:

2-s2.0-85068533784

Part of ISSN: 16180399 14348411
Contributors: Garg, N.; Pratap, Y.; Gupta, M.; Kabra, S.
Source: Self-asserted source
Yogesh Pratap via Scopus - Elsevier

Modeling and Simulation of AlGaN/GaN MOS-HEMT for Biosensor Applications

IEEE Sensors Journal
2019 | Journal article
DOI: 10.1109/JSEN.2018.2878243
EID:

2-s2.0-85055685977

Part of ISSN: 1530437X
Contributors: Pal, P.; Pratap, Y.; Gupta, M.; Kabra, S.
Source: Self-asserted source
Yogesh Pratap via Scopus - Elsevier

Performance Analysis Of Metalloid Source/ Drain GaAs-FinFET For Analog/RF Applications

Proceedings of the 4th International Conference on Devices, Circuits and Systems, ICDCS 2018
2019 | Conference paper
DOI: 10.1109/ICDCSyst.2018.8605159
EID:

2-s2.0-85061920561
Contributors: Pratap, Y.; Sinha, R.; Pal, P.; Malik, S.; Kabra, S.; Kumar, S.
Source: Self-asserted source
Yogesh Pratap via Scopus - Elsevier

Performance of AlGaN/GaN based common drain dual HEMT (CDD-HEMT) for high power applications

2019 IEEE MTT-S International Microwave and RF Conference, IMARC 2019
2019 | Conference paper
DOI: 10.1109/IMaRC45935.2019.9118660
EID:

2-s2.0-85087762608
Contributors: Pal, P.; Pratap, Y.; Gupta, M.; Kabra, S.
Source: Self-asserted source
Yogesh Pratap via Scopus - Elsevier

Traps induced Greens function based mathematical modeling for BaTiO<sub>3</sub>-SrTiO<sub>3</sub> gate stack dual metal GAA MOSFET

Semiconductor Science and Technology
2019 | Journal article
DOI: 10.1088/1361-6641/ab3f02
EID:

2-s2.0-85075986209

Part of ISSN: 13616641 02681242
Contributors: Gauba, T.; Pratap, Y.; Rewari, S.; Gupta, R.S.
Source: Self-asserted source
Yogesh Pratap via Scopus - Elsevier

Analysis of Interface Trap Charges of Double Gate Junctionless Nanowire Transistor (DG-JNT)for Digital Circuit Applications

Proceedings of International Conference on 2018 IEEE Electron Device Kolkata Conference, EDKCON 2018
2018 | Conference paper
DOI: 10.1109/EDKCON.2018.8770427
EID:

2-s2.0-85070376106
Contributors: Garg, N.; Pratap, Y.; Gupta, M.; Kabra, S.
Source: Self-asserted source
Yogesh Pratap via Scopus - Elsevier

Analytical modeling of gate-all-around junctionless transistor based biosensors for detection of neutral biomolecule species

Journal of Computational Electronics
2018 | Journal article
DOI: 10.1007/s10825-017-1041-4
EID:

2-s2.0-85026819820

Part of ISSN: 15728137 15698025
Contributors: Pratap, Y.; Kumar, M.; Kabra, S.; Haldar, S.; Gupta, R.S.; Gupta, M.
Source: Self-asserted source
Yogesh Pratap via Scopus - Elsevier

Cylindrical gate all around Schottky barrier MOSFET with insulated shallow extensions at source/drain for removal of ambipolarity: A novel approach

Journal of Semiconductors
2017 | Journal article
DOI: 10.1088/1674-4926/38/12/124002
EID:

2-s2.0-85040359129

Part of ISSN: 16744926
Contributors: Kumar, M.; Pratap, Y.; Haldar, S.; Gupta, M.; Gupta, R.S.
Source: Self-asserted source
Yogesh Pratap via Scopus - Elsevier

CSDG MOSFET: An Advanced novel architecture for CMOS technology

12th IEEE International Conference Electronics, Energy, Environment, Communication, Computer, Control: (E3-C3), INDICON 2015
2016 | Conference paper
DOI: 10.1109/INDICON.2015.7443481
EID:

2-s2.0-84994338435
Contributors: Verma, J.H.K.; Pratap, Y.; Gupta, M.; Haldar, S.; Gupta, R.S.
Source: Self-asserted source
Yogesh Pratap via Scopus - Elsevier

DMG insulated shallow extension cylindrical GAA Schottky Barrier MOSFET for removal of ambipolarity: A novel approach

Proceedings - International NanoElectronics Conference, INEC
2016 | Conference paper
DOI: 10.1109/INEC.2016.7589309
EID:

2-s2.0-84992694825

Part of ISSN: 21593523
Contributors: Kumar, M.; Pratap, Y.; Gupta, M.; Haldar, S.; Gupta, R.S.
Source: Self-asserted source
Yogesh Pratap via Scopus - Elsevier

Effect of high-k and vacuum dielectrics as gate stack on a junctionless cylindrical surrounding gate (JL-CSG) MOSFET

Solid-State Electronics
2016 | Journal article
DOI: 10.1016/j.sse.2016.05.016
EID:

2-s2.0-84978632101

Part of ISSN: 00381101
Contributors: Sharma, A.; Jain, A.; Pratap, Y.; Gupta, R.S.
Source: Self-asserted source
Yogesh Pratap via Scopus - Elsevier

Gate-Material-Engineered Junctionless Nanowire Transistor (JNT) with Vacuum Gate Dielectric for Enhanced Hot-Carrier Reliability

IEEE Transactions on Device and Materials Reliability
2016 | Journal article
DOI: 10.1109/TDMR.2016.2583262
EID:

2-s2.0-84986607549

Part of ISSN: 15582574 15304388
Contributors: Pratap, Y.; Haldar, S.; Gupta, R.S.; Gupta, M.
Source: Self-asserted source
Yogesh Pratap via Scopus - Elsevier

Impact of asymmetric gate stack on a junctionless CSG MOSFET for enhanced hot carrier reliability

12th IEEE International Conference Electronics, Energy, Environment, Communication, Computer, Control: (E3-C3), INDICON 2015
2016 | Conference paper
DOI: 10.1109/INDICON.2015.7443373
EID:

2-s2.0-84994242373
Contributors: Sharma, A.; Jain, A.; Gupta, R.S.; Pratap, Y.
Source: Self-asserted source
Yogesh Pratap via Scopus - Elsevier

Physics-based drain current modeling of gate-all-around junctionless nanowire twin-gate transistor (JN-TGT) for digital applications

Journal of Computational Electronics
2016 | Journal article
DOI: 10.1007/s10825-016-0798-1
EID:

2-s2.0-84959343724

Part of ISSN: 15728137 15698025
Contributors: Pratap, Y.; Gautam, R.; Haldar, S.; Gupta, R.S.; Gupta, M.
Source: Self-asserted source
Yogesh Pratap via Scopus - Elsevier

Capacitance modeling of gate material engineered cylindrical/surrounded gate MOSFETs for sensor applications

Superlattices and Microstructures
2015 | Journal article
DOI: 10.1016/j.spmi.2015.09.015
EID:

2-s2.0-84949565093

Part of ISSN: 10963677 07496036
Contributors: Verma, J.H.K.; Pratap, Y.; Haldar, S.; Gupta, R.S.; Gupta, M.
Source: Self-asserted source
Yogesh Pratap via Scopus - Elsevier

Localized Charge-Dependent Threshold Voltage Analysis of Gate-Material-Engineered Junctionless Nanowire Transistor

IEEE Transactions on Electron Devices
2015 | Journal article
DOI: 10.1109/TED.2015.2441777
EID:

2-s2.0-85027930389

Part of ISSN: 00189383
Contributors: Pratap, Y.; Haldar, S.; Gupta, R.S.; Gupta, M.
Source: Self-asserted source
Yogesh Pratap via Scopus - Elsevier

An analytical subthreshold current modeling of cylindrical gate all around (CGAA) MOSFET incorporating the influence of device design engineering

Microelectronics Journal
2014 | Journal article
DOI: 10.1016/j.mejo.2014.01.015
EID:

2-s2.0-84899969845

Part of ISSN: 00262692
Contributors: Pratap, Y.; Ghosh, P.; Haldar, S.; Gupta, R.S.; Gupta, M.
Source: Self-asserted source
Yogesh Pratap via Scopus - Elsevier

Performance evaluation and reliability issues of junctionless CSG MOSFET for RFIC design

IEEE Transactions on Device and Materials Reliability
2014 | Journal article
DOI: 10.1109/TDMR.2013.2296524
EID:

2-s2.0-84898412397

Part of ISSN: 15582574 15304388
Contributors: Pratap, Y.; Haldar, S.; Gupta, R.S.; Gupta, M.
Source: Self-asserted source
Yogesh Pratap via Scopus - Elsevier

RF performance analysis and small signal parameter extraction of Cylindrical Surrounding Double Gate MOSFETs for sub-millimeter wave applications

Proceedings of the IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS
2014 | Conference paper
DOI: 10.1109/ICDCSyst.2014.6926176
EID:

2-s2.0-84908284938

Part of ISSN: 15416275
Contributors: Verma, J.H.K.; Pratap, Y.; Gupta, M.; Haldar, S.; Gupta, R.S.
Source: Self-asserted source
Yogesh Pratap via Scopus - Elsevier

Effect of ITC on the characteristics of junctionless nanowire transistor(JLNWT) for future ULSI applications: Semianalytical modeling approach

2013 Annual IEEE India Conference, INDICON 2013
2013 | Conference paper
DOI: 10.1109/INDCON.2013.6726130
EID:

2-s2.0-84894452176
Contributors: Pratap, Y.; Gupta, M.; Haldar, S.; Gupta, R.S.
Source: Self-asserted source
Yogesh Pratap via Scopus - Elsevier

Peer review (6 reviews for 3 publications/grants)

Review activity for Applied nanoscience. (1)
Review activity for Indian Journal of Physics. (1)
Review activity for Silicon. (4)
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