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Ukraine

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Employment (4)

State Biotechnological University: Kharkiv, UA

2021-09-01 to present | Professor (Department of Physics and Mathematics)
Employment
Source: Self-asserted source
Ihor Storozhenko

V. N. Karazin Kharkiv National University: Kharkiv, UA

1991-08-05 to 2021-12-31 | Leading Researcher
Employment
Source: Self-asserted source
Ihor Storozhenko

Kharkiv Petro Vasylenko National Technical University of Agriculture: Kharkiv, UA

2019-09-12 to 2021-08-31 | Professor (Department of Physics and Mathematics)
Employment
Source: Self-asserted source
Ihor Storozhenko

National University of Pharmacy: Kharkiv, UA

2000-09-01 to 2019-08-30 | Professor
Employment
Source: Self-asserted source
Ihor Storozhenko

Education and qualifications (1)

V. N. Karazin Kharkiv National University: Kharkiv, UA

1986-09-01 to 1991-06-20
Education
Source: Self-asserted source
Ihor Storozhenko

Works (50 of 60)

Items per page:
Page 1 of 2

Functional testing of the lower extremity muscles

Medicni perspektivi
2023-06-30 | Journal article
Contributors: P.O. Sirenko; I.P. Storozhenko; J. Žīdens; A. Zuša; O.P. Yuzyk; D. Lietuviete; T.V. Kolesnyk
Source: check_circle
Crossref

Advanced Micron Sized Gunn Diode Based on Graded-Gap GaPAs – GaInAs

Journal of Nano- and Electronic Physics
2022 | Journal article | Investigation
Part of ISSN: 2077-6772
Part of ISSN: 2306-4277
Contributors: Ihor Storozhenko; Ihor Storozhenko; V.N. Karazin Kharkiv National University, 4, Svobody Sq., 61077 Kharkiv, Ukraine; Sergey Sanin; O.Ya. Usikov Institute for Radiophysics and Electronics NASU, 12, Ac. Proskura St., 61085 Kharkiv, Ukraine
Source: Self-asserted source
Ihor Storozhenko

The tools of convergence theory in economic science and practice of regional policy in Ukraine

Ekonomìka ta upravlìnnâ APK
2022-06-24 | Journal article | Author
Part of ISSN: 2415-7554
Part of ISSN: 2310-9262
Contributors: SHYBAIEVA NATALIIA; Ihor Storozhenko; Tetyana Baban
Source: Self-asserted source
Ihor Storozhenko
grade
Preferred source (of 2)‎

Advanced Gunn Diode on Based Graded GaPAs - GaInAs as High Power Source of Millimeter Wave

2021 IEEE Microwave Theory and Techniques in Wireless Communications (MTTW)
2021-10-07 | Journal article
Contributors: Ihor Storozhenko; Ihor Storozhenko
Source: Self-asserted source
Ihor Storozhenko

Diode on Based Graded GaPAs-GaInAs as High Power Source of Millimeter Wave

2021 IEEE 2nd KhPI Week on Advanced Technology (KhPIWeek)
2021-09-13 | Journal article
Contributors: Ihor Storozhenko; Ihor Storozhenko
Source: Self-asserted source
Ihor Storozhenko

Gunn Diodes Based on Graded-gap GaInPAs

Journal of Nano- and Electronic Physics
2020 | Journal article
Part of ISSN: 2077-6772
Part of ISSN: 2306-4277
Source: Self-asserted source
Ihor Storozhenko

Theoretical Study of Current Oscillations in Gunn Diodes Based on Graded III-nitrides Operating in Submillimeter Range: Frequency and Power

2020 IEEE Ukrainian Microwave Week (UkrMW)
2020-09-21 | Conference paper
Source: Self-asserted source
Ihor Storozhenko

On increasing power of short InGaPAs graded-gap Gunn diodes

Visnyk of V.N. Karazin Kharkiv National University, series “Radio Physics and Electronics”
2019 | Journal article
Part of ISSN: 2311-0872
Contributors: Ihor Storozhenko
Source: Self-asserted source
Ihor Storozhenko

Quantum-chemical calculations of transitional states thermodynamic parameters of tautomers of initial N,N’-disubstituted thiourea derivative during the cyclization reaction in the conditions of different solvents application

Biopolymers and Cell
2019-12-31 | Journal article | Investigation
Part of ISSN: 0233-7657
Part of ISSN: 1993-6842
Contributors: Ihor Storozhenko; L. O. Perekhoda; H. O. Yeromina; Z. G. Ieromina; N. V. Sheykina; I. V. Krasovskyi; M. V. Krasovska; I. P. Storozhenko
Source: Self-asserted source
Ihor Storozhenko

Gunn diodes based on graded InGaP-InPAs

Journal of Nano- and Electronic Physics
2018 | Journal article
EID:

2-s2.0-85052472254

Contributors: Storozhenko, I.P.; Kaydash, M.V.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

The Study of Harmonic-Mode Operation of Transfer Electron Devices on Based Graded-Gap Semiconductors

International Conference on Mathematical Methods in Electromagnetic Theory, MMET
2018 | Conference paper
EID:

2-s2.0-85054059296

Contributors: Storozhenko, I.; Kaydash, M.; Yaroshenko, O.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

Wide-Band Gunn Diodes Based on Graded-Gap InGaP/InP As

UWBUSIS 2018 - 2018 9th International Conference on Ultrawideband and Ultrashort Impulse Signals, Proceedings
2018 | Conference paper
EID:

2-s2.0-85057448062

Contributors: Storozhenko, I.; Kaydash, M.; Yaroshenko, O.; Arkusha, Y.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

Algainas graded-gap gunn diode

Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika)
2016 | Journal article
EID:

2-s2.0-85011581555

Contributors: Storozhenko, I.P.; Kaydash, M.V.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

InBN and GaBN graded gap Gunn diodes at different BN distribution

9th International Kharkiv Symposium on Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves, MSMW 2016
2016 | Conference paper
EID:

2-s2.0-84987984903

Contributors: Storozhenko, I.P.; Kaydash, M.V.; Yaroshenko, A.N.; Arkusha, Y.V.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

Numerical simulations of transferred-electron devices based on graded-gap semiconductor nitrides with boron nitride for terahertz range

2016 8th International Conference on Ultrawideband and Ultrashort Impulse Signals, UWBUSIS 2016
2016 | Conference paper
EID:

2-s2.0-85000789274

Contributors: Storozhenko, I.P.; Yaroshenko, A.N.; Arkusha, Yu.V.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

Static domain in a transferred-electron device based on graded-gap AlGaAS

Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika)
2016 | Journal article
EID:

2-s2.0-84995402649

Contributors: Storozhenko, I.P.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

InBN and GaBN GRADED-GAP gunn diodes

Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika)
2014 | Journal article
EID:

2-s2.0-84914810763

Contributors: Storozhenko, I.P.; Yaroshenko, A.N.; Arkusha, Yu.V.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

Resonance frequencies of gunn diodes based on nitride gradedgap semiconductors

Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika)
2014 | Journal article
EID:

2-s2.0-84906061958

Contributors: Storozhenko, I.P.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

Generation efficiency of resonant-tunnel barrier diodes in sandwich-type structures

Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika)
2013 | Journal article
EID:

2-s2.0-84883579393

Contributors: Prokhorov, E.D.; Botsula, O.V.; Klimenko, O.A.; Storozhenko, I.P.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

Graded-gap Gunn diodes on the base of InBn and GaBn

CriMiCo 2013 - 2013 23rd International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings
2013 | Conference paper
EID:

2-s2.0-84891128474

Contributors: Arkusha, Yu.V.; Storozhenko, I.P.; Yaroshenko, A.N.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

The characteristics of the graded-gap AlGaAs-GaAs-InGaAs Gunn diodes

CriMiCo 2013 - 2013 23rd International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings
2013 | Conference paper
EID:

2-s2.0-84891118192

Contributors: Storozhenko, I.P.; Kaydash, M.V.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

Frequency range of Gunn diodes on base of graded-gap semiconductor nitrides

2012 6th International Conference on Ultrawideband and Ultrashort Impulse Signals, UWBUSIS 2012 - Conference Proceedings
2012 | Conference paper
EID:

2-s2.0-84872239508

Contributors: Storozhenko, I.P.; Arkusha, Yu.V.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

Prospects for using gunn diodes based On GaN, A1N And InN

Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika)
2012 | Journal article
EID:

2-s2.0-84861510489

Contributors: Storozhenko, I.P.; Arkusha, Yu.V.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

Resonance frequency of Gunn diodes based on A<inf>3</inf>B<inf>5</inf> graded-gap semiconductors

CriMiCo 2012 - 2012 22nd International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings
2012 | Conference paper
EID:

2-s2.0-84869753454

Contributors: Zhivotova, E.N.; Storozhenko, I.P.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

Simulation of graded-gap ALInN Gunn diodes

CriMiCo 2012 - 2012 22nd International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings
2012 | Conference paper
EID:

2-s2.0-84869830028

Contributors: Storozhenko, I.P.; Arkusha, Y.V.; Yaroshenko, A.N.; Kaydash, M.V.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

Space-charge waves in InN-InBN-InN Gunn diodes

CriMiCo 2012 - 2012 22nd International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings
2012 | Conference paper
EID:

2-s2.0-84869837381

Contributors: Yaroshenko, A.N.; Storozhenko, I.P.; Arkusha, Y.V.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

Estimation of hydration of oxyethylated derivatives of glycerol

CriMiCo 2011 - 2011 21st International Crimean Conference: Microwave and Telecommunication Technology, Conference Proceedings
2011 | Conference paper
EID:

2-s2.0-81455139799

Contributors: Zhivotova, E.N.; Dukhopelnikov, E.V.; Storozhenko, I.P.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

GaN-InN gann diodes characteristics in biharmonic mode

CriMiCo 2011 - 2011 21st International Crimean Conference: Microwave and Telecommunication Technology, Conference Proceedings
2011 | Conference paper
EID:

2-s2.0-81455132575

Contributors: Storozhenko, I.P.; Arkusha, Yu.V.; Piskun, A.A.; Yaroshenko, A.N.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

Resonance frequency of gunn diodes on the basis of AlGaAs, GaPAs and GaSbAs graded gap semiconductors

Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika)
2011 | Journal article
EID:

2-s2.0-80053419857

Contributors: Storozhenko, I.P.; Zhivotova, E.N.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

The function of neutral-impurity and alloyed-potential electron scattering in excitation of space-charge waves in intervalley electron-transfer devices

Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika)
2011 | Journal article
EID:

2-s2.0-79961033427

Contributors: Storozhenko, I.P.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

Gann diodes on basis of variband semiconductors

KpbiMuKo 2010 CriMiCo - 2010 20th International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings
2010 | Conference paper
EID:

2-s2.0-78650410162

Contributors: Storozhenko, I.P.; Arkusha, Yu.V.; Zhivotova, E.N.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

The generation by Gunn diodes based on the GaN, InN, AlN TED'S in biharmonic regime

2010 5th International Confernce on Ultrawideband and Ultrashort Impulse Signals, UWBUSIS'2010
2010 | Conference paper
EID:

2-s2.0-78650161150

Contributors: Storozhenko, I.P.; Arkusha, Yu.V.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

Diodes with intervalley transfer on the basis of A3B5 nitride semiconductors

KpbiMuKo 2009 CriMiCo - 2009 19th International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings
2009 | Conference paper
EID:

2-s2.0-73949100072

Contributors: Storozhenko, I.P.; Arkousha, Yu.V.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

Resonant-tunneling cathode for a gunn diode

Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika)
2009 | Journal article
EID:

2-s2.0-67549144914

Contributors: Botsula, O.V.; Prokhorov, E.D.; Storozhenko, I.P.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

Energy and frequency characteristics of GaAs gunn diodes with AlxGa1-xAs and GaPxAs1-x cathodes

Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika)
2008 | Journal article
EID:

2-s2.0-44249112865

Contributors: Storozhenko, I.P.; Arkusha, Yu.V.; Prokhorov, E.D.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

Graded band gap diodes with static domain

KpbiMuKo 2008 CriMiCo - 18th International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings
2008 | Conference paper
EID:

2-s2.0-58049156102

Contributors: Storozhenko, I.P.; Prokhorov, E.D.; Botsula, O.V.; Arkusha, Yu.V.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

Initiation and drift of the space-charge waves in devices based on variband GaPx(z)As1-x(z) with the intervalley electron transport

Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika)
2008 | Journal article
EID:

2-s2.0-44249102779

Contributors: Storozhenko, I.P.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

Frequency characteristics of diodes with intervalley electron transfer that are based on variband in x(z)Ga1 - X(z)As with various cathode contacts

Journal of Communications Technology and Electronics
2007 | Journal article
EID:

2-s2.0-36448964902

Contributors: Storozhenko, I.P.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

InP Gunn diodes with forward bias heterocathode

2007 17th International Crimean Conference - Microwave and Telecommunication Technology, CRIMICO
2007 | Conference paper
EID:

2-s2.0-50149116351

Contributors: Storozhenko, I.P.; Arkusha, Yu.V.; Prokhorov, E.D.; Botsula, O.V.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

InP1-x(z)asx(z) variband Gunn diodes with different cathode contacts

Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika)
2007 | Journal article
EID:

2-s2.0-38149073951

Contributors: Storozhenko, I.P.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

Oscillation efficiency of diodes with Al0,3Ga 0,7As/GaAs cathode

2007 17th International Crimean Conference - Microwave and Telecommunication Technology, CRIMICO
2007 | Conference paper
EID:

2-s2.0-50149115974

Contributors: Botsula, O.V.; Prokhorov, E.D.; Storozhenko, I.P.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

Oscillation efficiency of the diodes with the cathode Al 0,3Ga0,7As/GaAs

MSMW'07 Symposium Proceedings - The 6th International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves and Workshop on Terahertz Technologies
2007 | Conference paper
EID:

2-s2.0-47249155711

Contributors: Botsula, O.V.; Prokhorov, E.D.; Storozhenko, I.P.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

Variband transferred electron devises

MSMW'07 Symposium Proceedings - The 6th International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves and Workshop on Terahertz Technologies
2007 | Conference paper
EID:

2-s2.0-47249087840

Contributors: Storozhenko, I.P.; Arkusha, Y.V.; Botsula, O.V.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

Influence of the variband-layer thickness on the energy and frequency characteristics of Inx(z)Ga1 - X(z)As Gunn diodes

Journal of Communications Technology and Electronics
2006 | Journal article
EID:

2-s2.0-33746883180

Contributors: Arkusha, Yu.V.; Prokhorov, E.D.; Storozhenko, I.P.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

Power and frequency characteristics of gunn-diodes on the basis of GaN

2005 15th International Crimean Conference Microwave and Telecommunication Technology, CriMiCo'2005 - Conference Proceedings
2005 | Conference paper
EID:

2-s2.0-33846300724

Contributors: Arkusha, Yu.V.; Prokhorov, E.D.; Storozhenko, I.P.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

InGaAs-TED's with variband layer

Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves - Symposium Proceedings, MSMW'04
2004 | Conference paper
EID:

2-s2.0-14544304112

Contributors: Storozhenko, I.P.; Arkusha, Yu.V.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

Simulation of short Gunn diode with resonant-tunneling cathode

Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves - Symposium Proceedings, MSMW'04
2004 | Conference paper
EID:

2-s2.0-14544304113

Contributors: Storozhenko, I.P.; Prokhorov, E.D.; Botsula, O.V.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

Simulation of transferred electron devices with linearly graded composition of 3-5 threefold semiconductor in active zone

International Journal of Infrared and Millimeter Waves
2004 | Journal article
EID:

2-s2.0-3042777709

Contributors: Storozhenko, I.P.; Prokhorov, E.D.; Arkusha, Yu.V.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

Modelling the gunn diodes based on variband semiconductors

Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika)
2003 | Journal article
EID:

2-s2.0-77949964420

Contributors: Storozhenko, I.P.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier

Operation of gunn diode containing two InP<inf>0.7</inf>As <inf>0.3</inf>-In<inf>0.4</inf>Ga<inf>0.6</inf>As active regions

Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika)
2003 | Journal article
EID:

2-s2.0-77949999773

Contributors: Arkusha, Y.V.; Prokhorov, E.D.; Storozhenko, I.P.
Source: Self-asserted source
Ihor Storozhenko via Scopus - Elsevier
Items per page:
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