Personal information

supercapacitors, metal organic frameworks, MOF, sputter deposition processes and systems, nanostructures, XRD, XRR, photoluminescence, patterning, 3D printing, fluidic devices, printed electronics, flexible electronics, transparent conducting oxides, batteries, sensors, ZnO, metallizations and contacts, GaN-based HEMTs
Poland

Biography

Leader of the Porous Materials Researc Area at the Łukasiewicz - Institute of Microelectronics and Photonics
Ph.D. (ITE, 2013), D.Sc. (ITE, 2018), Post-doc (MIT, 2018-2019)

My specific field of interest is in the development of nanoscale functional thin film materials and their integration with devices for electronics, optoelectronics, energy storage and sensors. The two main areas of work concern: dense thin film materials with various degrees of nanoscale complexity (epitaxial, polycrystalline, inclusion-in-matrix, amorphous, etc) as well as porous crystalline thin film materials. A strong feedback between the parameters of the material fabrication process, material properties and desired device performance, enabled through tailoring complementary characterization techniques is one of the key aspects of my work.

With over a decade of experience in both the development of oxide films as well as nitride structure processing in the clean-room microelectronic laboratories at the Institute of Electron Technology, aided by a postdoctoral stay at the Chemistry Department of Massachussets Institute of Technology, currently I am focusing on enhancing the capabilities of nitride-based opto/electronic devices by using application-tailored oxide electrodes, disrupting the energy storage devices for harsh environments and developing new types of biochemical and gas sensors.

Some of my biggest achievements and points for ongoing development include:
- the research on band-gap engineering of sputter deposited, Al-doped ZnMgO and the development of a blue-violet-transparent electrode for GaN-based LEDs based on that material, which enabled increased irradiated power by 250% when compared to a conventional metallic electrode and by 148% when compared to a non bandgap-engineered ZnO:Al
- the development of porous black Zn and white ZnO thin films by sputter deposition with post-deposition oxidation - the only nanostructured porous films deposited by magnetron sputtering and controlling it to achieve a wide array of morphologies.
- the development of state-of-the art transparent supercapacitors based on the porous ZnO, decorated with MnO2 nanoparticles achieving a specific capacitance of 2.6 mF/cm2 with a transparency of 86% for a full device.
- the development of state-of-the art high power supercapacitor electrodes made using highly conductive Metal-Organic Frameworks (MOFs)
- the development of porous electrodes for a room-temperature NO2 sensor, detecting 2 ppm gas without any heating.

Apart from the main topics I am also involved in the processing technology of III-N devices, in particular GaN-based HEMTs. My experience concerns mostly ohmic contact formation, patterning and reliability issues. Additionally, I am investigating inkjet printing of oxide functional materials and functional integration of 3D printed parts with electronic/sensing devices.

I was awarded several scholarships, including: Scholarship of the French Government (BFG, 2018), Ministry of Science and Education's Award for Exceptional Young Scientists (2015), Regional Mazovian Ph. D. scholarships (2011, 2009). I have been constantly ranked as one of the top young scientists at the Institute of Electron Technology.

I have significant project experience on both national, EU and US levels with several PI positions in projects.

As of November 2021, coauthor of 77 peer-reviewed publications (h-index = 14), including 46 in ISI-indexed journals and 17 conference proceedings. Given 2 seminars, coauthor of over 90 conference presentations including 8 invited talks at international and national conferences on semiconductor physics and technology.
Coauthor of 7 Polish patents, 1 Polish patent application and 1 US patent application.

Activities

Employment (6)

Łukasiewicz Research Network - Institute of Microelectronics and Photonics: Warsaw, PL

2020-10-01 to present | Leader of the porous materials research area
Employment
Source: Self-asserted source
Michał Borysiewicz

Łukasiewicz Reearch Network - Institute of Electron Technology: Warsaw, PL

2019-02-01 to 2020-09-30 | Assistant Professor (Depart­ment of Micro- and Nano­tech­no­logy of Wide Band­gap Semi­con­duc­tors)
Employment
Source: Self-asserted source
Michał Borysiewicz

Massachusetts Institute of Technology: Cambridge, Massachusetts, US

2018-02-01 to 2019-01-31 | Postdoctoral Associate (Chemistry)
Employment
Source: Self-asserted source
Michał Borysiewicz

Instytut Technologii Elektronowej: Warszawa, PL

2013-10 to 2018-01-31 | Assistant professor (Department of Micro- and Nanotechnology of Wide Band Gap Semiconductors)
Employment
Source: Self-asserted source
Michał Borysiewicz

Instytut Technologii Elektronowej: Warszawa, PL

2008-01 to 2013-09 | Research assistant (Department of Micro- and Nanotechnology of Wide Band Gap Semiconductors)
Employment
Source: Self-asserted source
Michał Borysiewicz

Instytut Technologii Elektronowej: Warszawa, PL

2007-09 to 2007-12 | Intern (Department of Micro- and Nanotechnology of Wide Band Gap Semiconductors)
Employment
Source: Self-asserted source
Michał Borysiewicz

Education and qualifications (3)

Łukasiewicz Research Network – Institute of Electron Technology: Warsaw, PL

2013-07-01 to 2018-02-06 | Habilitation / D. Sc. in Electronics
Education
Source: Self-asserted source
Michał Borysiewicz

Instytut Technologii Elektronowej: Warszawa, PL

2008 to 2013 | Ph. D. in electronic engineering, solid-state electronics, with distinction
Education
Source: Self-asserted source
Michał Borysiewicz

Uniwersytet Warszawski Wydzial Fizyki: Warszawa, PL

2002-10 to 2007-06 | M. Sc. in Physics, Solid-State Physics (Department of Solid-State Physics)
Education
Source: Self-asserted source
Michał Borysiewicz

Funding (6)

Active oxide films for sensing applications

2017-06 to 2017-12 | Contract
Institute of Electron Technology (Warsaw, PL)
Source: Self-asserted source
Michał Borysiewicz

Study of the effect of aggregation of dyes and quantum dots on the performance of photoelectrochemical cells based on nanocoral ZnO

Source: Self-asserted source
Michał Borysiewicz
grade
Preferred source (of 2)‎

Supercapacitors for transparent electronics based on nanocoral ZnO

2015-01-01 to 2016-12-31 | Grant
National Centre for Research and Development (Warsaw, PL)
GRANT_NUMBER:

615/L-5/2013

Source: Self-asserted source
Michał Borysiewicz
grade
Preferred source (of 2)‎

Magnetron sputtering for the fabrication of ZnO-based solid solutions part 2

2015-01 to 2015-12 | Contract
Instytut Technologii Elektronowej (Warsaw, PL)
Source: Self-asserted source
Michał Borysiewicz

Magnetron sputtering for the fabrication of ZnO-based solid solutions

2014-01 to 2014-12 | Contract
Instytut Technologii Elektronowej (Warsaw, PL)
Source: Self-asserted source
Michał Borysiewicz

Magnetron Sputter Deposition of Electronic Functional Materials: MAX Phases for Ohmic Contacts and Thin ZnO Films for Transparent Electronics

2012-01 to 2012-12 | Contract
Instytut Technologii Elektronowej (Warsaw, PL)
Source: Self-asserted source
Michał Borysiewicz