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Works (26)

Linear Fine-tuning VFB and Improved Interface via Novel Al2O3 Atomic in-situ Dipole Buffer Layer (DBL) in ALD La2O3 Dipole-first Stack

IEEE Electron Device Letters
2025 | Journal article
DOI: 10.1109/LED.2025.3549003
Contributors: Yanzhao Wei; Jiaxin Yao; Yu Wang; Qingzhu Zhang; Jianfeng Gao; Xiaolei Wang; Jun Luo; Huaxiang Yin
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Performance Optimization of Fabricated Nanosheet GAA CMOS Transistors and 6T-SRAM Cells via Source/Drain Doping Engineering

IEEE Journal of the Electron Devices Society
2025 | Journal article
DOI: 10.1109/JEDS.2025.3531432
Contributors: Xuexiang Zhang; Qingkun Li; Lei Cao; Qingzhu Zhang; Renjie Jiang; Peng Wang; Jiaxin Yao; Huaxiang Yin
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Record 60.3 mV/dec Subthreshold Swing and >20% Performance Enhancement in Gate-All-Around Nanosheet CMOS Devices Using O₃-Based Quasi-Atomic Layer Etching Treatment Technique

IEEE Electron Device Letters
2025-03 | Journal article
DOI: 10.1109/LED.2024.3524259
Contributors: R. J. Jiang; G. Q. Sang; L. Cao; J. X. Yao; K. Yang; Y. H. Lu; X. X. Zhang; P. Wang; J. J. Li; X. B. He et al.
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High-Performance GAA FETs With 100 Ω Parasitic Resistance and 965 μA/μm On-State Current Using Quasi-Self-Aligned Landing Pads

IEEE Electron Device Letters
2025-01 | Journal article
DOI: 10.1109/LED.2024.3505926
Contributors: R. J. Jiang; P. Wang; J. X. Yao; X. X. Zhang; L. Cao; J. J. Li; G. Q. Sang; X. B. He; N. Zhou; Y. D. Zhang et al.
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High-Performance Carbon Nanotube Optoelectronic Transistor With Optimized Process for 3D Communication Circuit Applications

IEEE Journal of the Electron Devices Society
2024 | Journal article
DOI: 10.1109/JEDS.2024.3465669
Contributors: Shuang Liu; Heyi Huang; Yanqing Li; Yadong Zhang; Feixiong Wang; Zhaohao Zhang; Qingzhu Zhang; Jiali Huo; Jiaxin Yao; Jing Wen et al.
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Hybrid Integration of Gate-All-Around Stacked Si Nanosheet FET and Si/SiGe Super-Lattice FinFET to Optimize 6T-SRAM for N3 Node and Beyond

IEEE Transactions on Electron Devices
2024 | Journal article
DOI: 10.1109/TED.2024.3358251
Contributors: Xuexiang Zhang; Jiaxin Yao; Yanna Luo; Lei Cao; Yantong Zheng; Qingzhu Zhang; Zhenhua Wu; Huaxiang Yin
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Low-temperature atomic-level trimming on Ge interfused surface for gate-all-around Si nanosheets transistors

Rare Metals
2024-12 | Journal article
DOI: 10.1007/s12598-024-02863-x
Contributors: Guan-Qiao Sang; Ren-Jie Jiang; Yan-Zhao Wei; Qing-Kun Li; Mei-He Zhang; Jia-Xin Yao; Yi-Hong Lu; Lei Cao; Jun-Feng Li; Xu-Lei Qin et al.
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The Investigation of Reduced Variation Effect in FinFETs With Ultrathin 3-nm Ferroelectric Hf₀.₅Zr₀.₅O₂

IEEE Transactions on Electron Devices
2024-05 | Journal article
DOI: 10.1109/TED.2024.3379160
Contributors: Fan Zhang; Zhaohao Zhang; Jiaxin Yao; Xiaohui Zhu; Yue Peng; Jiali Huo; Qingzhu Zhang; Gaobo Xu; Zhenhua Wu; Genquan Han et al.
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Sub-5-Å La2O3 In Situ Dipole Technique for Large VFB Modulation With EOT Reduction and Improved Interface for HKMG Technology

IEEE Transactions on Electron Devices
2024-01 | Journal article
DOI: 10.1109/TED.2023.3335900
Contributors: Yanzhao Wei; Jiaxin Yao; Qingzhu Zhang; Guanqiao Sang; Yunjiao Bao; Jianfeng Gao; Junfeng Li; Jun Luo; Huaxiang Yin
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Physical Insights of Si-Core-SiGe-Shell Gate-All-Around Nanosheet pFET for 3 nm Technology Node

IEEE Transactions on Electron Devices
2023 | Journal article
DOI: 10.1109/TED.2023.3268156
Contributors: Haoqing Xu; Jiaxin Yao; Zhizhen Yang; Lei Cao; Qingzhu Zhang; Yongliang Li; Anyan Du; Huaxiang Yin; Zhenhua Wu
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Investigation of Fabricated CMOS FishboneFETs and TreeFETs With Strained SiGe Nano-Fins on Bulk-Si Substrate

IEEE Electron Device Letters
2023-09 | Journal article
DOI: 10.1109/LED.2023.3294545
Contributors: Lei Cao; Qingzhu Zhang; Jiaxin Yao; Junjie Li; Yang Liu; Yanna Luo; Zhenzhen Kong; Na Zhou; Jianfeng Gao; Yihong Lu et al.
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Narrow Sub-Fin Technique for Suppressing Parasitic-Channel Effect in Stacked Nanosheet Transistors

IEEE Journal of the Electron Devices Society
2022 | Journal article
DOI: 10.1109/JEDS.2021.3130123
Contributors: Jie Gu; Qingzhu Zhang; Zhenhua Wu; Yanna Luo; Lei Cao; Yuwei Cai; Jiaxin Yao; Zhaohao Zhang; Gaobo Xu; Huaxiang Yin et al.
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Layout Optimization of Complementary FET 6T-SRAM Cell Based on a Universal Methodology Using Sensitivity With Respect to Parasitic - and -Values

IEEE Transactions on Electron Devices
2022-11 | Journal article
DOI: 10.1109/TED.2022.3207972
Contributors: Yanna Luo; Lei Cao; Qingzhu Zhang; Yu Cao; Zhaohao Zhang; Jiaxin Yao; Gangping Yan; Xuexiang Zhang; Weizhuo Gan; Jiali Huo et al.
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Novel Channel-First Fishbone FETs With Symmetrical Threshold Voltages and Balanced Driving Currents Using Single Work Function Metal Process

IEEE Transactions on Electron Devices
2022-11 | Journal article
DOI: 10.1109/TED.2022.3206179
Contributors: Lei Cao; Qingzhu Zhang; Yanna Luo; Jie Gu; Weizhuo Gan; Peng Lu; Jiaxin Yao; Haoqing Xu; Peng Zhao; Kun Luo et al.
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Experimental Investigation of Ultrathin Al₂O₃ Ex-Situ Interfacial Doping Strategy on Laminated HKMG Stacks via ALD

IEEE Transactions on Electron Devices
2022-04 | Journal article
DOI: 10.1109/TED.2022.3152976
Contributors: Renren Xu; Jiaxin Yao; Gaobo Xu; Yanzhao Wei; Huaxiang Yin; Qingzhu Zhang; Guoliang Tian; Yanrong Wang; Gangping Yan; Jinjuan Xiang et al.
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Quantum Dot With a Diamond-Shaped Channel MOSFET on a Bulk Si Substrate

IEEE Transactions on Electron Devices
2021-01 | Journal article
DOI: 10.1109/TED.2020.3039734
Contributors: Jie Gu; Zhenhua Wu; Qinzhu Zhang; Jiaxin Yao; Zhaohao Zhang; Junjie Li; Yuwei Cai; Renren Xu; Gaobo Xu; Huaxiang Yin et al.
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A Novel General Compact Model Approach for 7-nm Technology Node Circuit Optimization From Device Perspective and Beyond

IEEE Journal of the Electron Devices Society
2020 | Journal article
DOI: 10.1109/JEDS.2020.2980441
Contributors: Qiang Huo; Zhenhua Wu; Weixing Huang; Xingsheng Wang; Geyu Tang; Jiaxin Yao; Yongpan Liu; Xiaojin Zhao; Feng Zhang; Ling Li et al.
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Novel Band-Edge Work Function Performance Modulation via NPT with PMOS1st/NMOS1st Laminated Stack for PMOS Low Power Target

ECS Journal of Solid State Science and Technology
2020-11-02 | Journal article
DOI: 10.1149/2162-8777/abc45f
Contributors: Jiaxin Yao; Huaxiang Yin; Zhenhua Wu; Jinshou Tian
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Physics-Based Device-Circuit Cooptimization Scheme for 7-nm Technology Node SRAM Design and Beyond

IEEE Transactions on Electron Devices
2020-03 | Journal article
DOI: 10.1109/TED.2020.2964610
Contributors: Qiang Huo; Zhenhua Wu; Xingsheng Wang; Weixing Huang; Jiaxin Yao; Jianhui Bu; Feng Zhang; Ling Li; Ming Liu
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Multi-Vt Performance Dependence on Capping Layer Position by NPT for PMOS Device Applications

ECS Journal of Solid State Science and Technology
2019 | Journal article
DOI: 10.1149/2.0131908jss
Contributors: Jiaxin Yao; Zhenhua Wu; Huaxiang Yin
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Enhanced Operation Characteristics for Charge Trapping Memory with Al2O3/HfO2/Al2O3 High-κ Dielectrics and Sige Substrate

ECS Meeting Abstracts
2019-05-01 | Journal article
DOI: 10.1149/MA2019-01/23/1175
Contributors: Zhaozhao Hou; Jiaxin Yao; Zhenhua Wu; Huaxiang Yin
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Novel Exploration of Flat-Band Voltage Manipulation by NPT for Advanced High-k/Metal-Gate CMOS Technology

ECS Meeting Abstracts
2019-05-01 | Journal article
DOI: 10.1149/MA2019-01/23/1174
Contributors: Jiaxin Yao; Zhaozhao Hou; Zhenhua Wu; Huaxiang Yin
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Novel Exploration of Flat-Band Voltage Manipulation by Nitrogen Plasma Treatment for Advanced High-k/Metal-Gate CMOS Technology

ECS Transactions
2019-04-23 | Journal article
DOI: 10.1149/08903.0055ecst
Contributors: Jiaxin Yao; Zhaozhao Hou; Zhenhua Wu; Huaxiang Yin
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Comparative Investigation of Flat-Band Voltage Modulation by Nitrogen Plasma Treatment for Advanced HKMG Technology

ECS Journal of Solid State Science and Technology
2018 | Journal article
DOI: 10.1149/2.0221808jss
Contributors: Jiaxin Yao; Huaxiang Yin; Zhenhua Wu; Jianfeng Gao; Qingzhu Zhang; Zhaozhao Hou; Jie Gu; Kun Luo
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Crossref

Physical Insights on Quantum Confinement and Carrier Mobility in Si, Si0.45Ge0.55, Ge Gate-All-Around NSFET for 5 nm Technology Node

IEEE Journal of the Electron Devices Society
2018 | Journal article
DOI: 10.1109/JEDS.2018.2858225
Contributors: Jiaxin Yao; Huaxiang Yin; Wenwu Wang; Jun Li; Kun Luo; Jiahan Yu; Qingzhu Zhang; Zhaozhao Hou; Jie Gu; Wen Yang et al.
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Novel GAA Si Nanowire p-MOSFETs With Excellent Short-Channel Effect Immunity via an Advanced Forming Process

IEEE Electron Device Letters
2018-04 | Journal article
DOI: 10.1109/LED.2018.2807389
Contributors: Qinzhu Zhang; Huaxiang Yin; Lingkuan Meng; Jiaxin Yao; Junjie Li; Guilei Wang; Yudong Li; Zhenhua Wu; Wenjuan Xiong; Hong Yang et al.
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