Personal information

Websites & social links

Group website

Other IDs

Scopus Author ID: 26534409300
Scopus Author ID: 57211192006

Keywords

Spintronics, Nanotechnology, Epitaxy, MBE, MOCVD, Nanowire, GaN, GaAs, LED, Solar cell, Photovoltaics, Semiconductor physics, Pulsed laser deposition, complex-oxides

Countries

South Korea

Biography

Interests: Heterogeneous integration of III-V, III-N, and complex-oxide materials and its applications

Activities

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Employment (3)

Yonsei University: Seoul, KR

2021-08-30 to present | Assistant Professor (Electrical and Electronic Engineering)
Employment
Source: Self-asserted source
Hyun S. Kum

Massachusetts Institute of Technology: Cambridge, MA, US

2017-09-01 to 2021-07-05 | Postdoctoral Associate
Employment
Source: Self-asserted source
Hyun S. Kum

Samsung Electronics: Hwaseong, KR

2012-09-01 to 2016-07-31 | Senior Engineer (Semiconductor R&D)
Employment
Source: Self-asserted source
Hyun S. Kum

Education and qualifications (2)

University of Texas at Austin: Austin, TX, US

B.S. (Electrical and Computer Engineering)
Education
Source: Self-asserted source
Hyun S. Kum

University of Michigan: Ann Arbor, MI, US

Ph.D. (Electrical Engineering and Computer Science)
Education
Source: Self-asserted source
Hyun S. Kum

Works (37)

Mid-infrared photon sensing using InGaN/GaN nanodisks via intersubband absorption

Scientific Reports
2022-12 | Journal article
DOI: 10.1038/s41598-022-08323-9
Part of ISSN: 2045-2322
Contributors: Hyun S. Kum
Source: Self-asserted source
Hyun S. Kum
grade
Preferred source (of 2)‎

Remote epitaxy

Nature Reviews Methods Primers
2022-12 | Journal article | Writing - original draft
DOI: 10.1038/s43586-022-00122-w
Part of ISSN: 2662-8449
Contributors: Hyun S. Kum
Source: Self-asserted source
Hyun S. Kum

Functional properties of Yttrium Iron Garnett thin films on graphene-coated Gd3Ga5O12 for remote epitaxial transfer

Journal of Magnetism and Magnetic Materials
2022-08 | Journal article
DOI: 10.1016/j.jmmm.2022.169440
Part of ISSN: 0304-8853
Contributors: Hyun S. Kum
Source: Self-asserted source
Hyun S. Kum

Chip-less wireless electronic skins by remote epitaxial freestanding compound semiconductors

Science
2022-08-19 | Journal article
DOI: 10.1126/science.abn7325
Part of ISSN: 0036-8075
Part of ISSN: 1095-9203
Contributors: Hyun S. Kum
Source: Self-asserted source
Hyun S. Kum

Reconfigurable heterogeneous integration using stackable chips with embedded artificial intelligence

Nature Electronics
2022-06 | Journal article
DOI: 10.1038/s41928-022-00778-y
Part of ISSN: 2520-1131
Contributors: Hyun S. Kum
Source: Self-asserted source
Hyun S. Kum
grade
Preferred source (of 2)‎

Atomic layer-by-layer etching of graphene directly grown on SrTiO<sub>3</sub> substrates for high-yield remote epitaxy and lift-off

APL Materials
2022-04-01 | Journal article
DOI: 10.1063/5.0087890
Part of ISSN: 2166-532X
Contributors: Hyun S. Kum
Source: Self-asserted source
Hyun S. Kum
grade
Preferred source (of 2)‎

Design of p‐WSe2/n‐Ge Heterojunctions for High‐Speed Broadband Photodetectors

Advanced Functional Materials
2021-10-07 | Journal article
DOI: 10.1002/adfm.202107992
Part of ISSN: 1616-301X
Part of ISSN: 1616-3028
Source: Self-asserted source
Hyun S. Kum
grade
Preferred source (of 2)‎

Van der Waals epitaxy and remote epitaxy of LiNbO3 thin films by pulsed laser deposition

Journal of Vacuum Science & Technology A
2021-07 | Journal article
DOI: 10.1116/6.0001109
Part of ISSN: 0734-2101
Part of ISSN: 1520-8559
Source: Self-asserted source
Hyun S. Kum
grade
Preferred source (of 2)‎

Long-term reliable physical health monitoring by sweat pore–inspired perforated electronic skins

Science Advances
2021-06 | Journal article
DOI: 10.1126/sciadv.abg8459
Part of ISSN: 2375-2548
Source: Self-asserted source
Hyun S. Kum
grade
Preferred source (of 2)‎

Impact of 2D–3D Heterointerface on Remote Epitaxial Interaction through Graphene

ACS Nano
2021-06-22 | Journal article
DOI: 10.1021/acsnano.1c03296
Part of ISSN: 1936-0851
Part of ISSN: 1936-086X
Source: Self-asserted source
Hyun S. Kum
grade
Preferred source (of 2)‎

Graphene-assisted spontaneous relaxation towards dislocation-free heteroepitaxy

Nature Nanotechnology
2020 | Journal article
DOI: 10.1038/s41565-020-0633-5
EID:

2-s2.0-85079461577

Part of ISBN:

17483395 17483387
Contributors: Bae, S.-H.; Lu, K.; Han, Y.; Kim, S.; Qiao, K.; Choi, C.; Nie, Y.; Kim, H.; Kum, H.S.; Chen, P. et al.
Source: Self-asserted source
Hyun S. Kum via Scopus - Elsevier
grade
Preferred source (of 2)‎

Heterogeneous integration of single-crystalline complex-oxide membranes

Nature
2020 | Journal article
DOI: 10.1038/s41586-020-1939-z
EID:

2-s2.0-85078966890

Part of ISBN:

14764687 00280836
Contributors: Kum, H.S.; Lee, H.; Kim, S.; Lindemann, S.; Kong, W.; Qiao, K.; Chen, P.; Irwin, J.; Lee, J.H.; Xie, S. et al.
Source: Self-asserted source
Hyun S. Kum via Scopus - Elsevier
grade
Preferred source (of 2)‎

Improving pseudo-van der Waals epitaxy of self-assembled InAs nanowires on graphene via MOCVD parameter space mapping

CrystEngComm
2019 | Journal article
DOI: 10.1039/C8CE01666F
EID:

2-s2.0-85060304910
Contributors: Baboli, M.A.; Slocum, M.A.; Kum, H.; Wilhelm, T.S.; Polly, S.J.; Hubbard, S.M.; Mohseni, P.K.
Source: Self-asserted source
Hyun S. Kum via Scopus - Elsevier
grade
Preferred source (of 2)‎

Integration of bulk materials with two-dimensional materials for physical coupling and applications

Nature Materials
2019 | Journal article
DOI: 10.1038/s41563-019-0335-2
EID:

2-s2.0-85066090685
Contributors: Bae, S.-H.; Kum, H.; Kong, W.; Kim, Y.; Choi, C.; Lee, B.; Lin, P.; Park, Y.; Kim, J.
Source: Self-asserted source
Hyun S. Kum via Scopus - Elsevier
grade
Preferred source (of 2)‎

Path towards graphene commercialization from lab to market

Nature Nanotechnology
2019 | Journal article
DOI: 10.1038/s41565-019-0555-2
EID:

2-s2.0-85072941002
Contributors: Kong, W.; Kum, H.; Bae, S.-H.; Shim, J.; Kim, H.; Kong, L.; Meng, Y.; Wang, K.; Kim, C.; Kim, J.
Source: Self-asserted source
Hyun S. Kum via Scopus - Elsevier
grade
Preferred source (of 2)‎

Epitaxial growth and layer-transfer techniques for heterogeneous integration of materials for electronic and photonic devices

Nature Electronics
2019-10 | Journal article
DOI: 10.1038/s41928-019-0314-2
Part of ISSN: 2520-1131
Source: Self-asserted source
Hyun S. Kum
grade
Preferred source (of 3)‎

Band Alignment Transition from Type I to Type II of InP/In0.48Ga0.52P quantum Dots

IEEE Region 10 Conference - TENCON
2018 | Conference paper
WOSUID: WOS:000465799100198
Contributors: Jung, Hyuna; Kum, Hyun; Hwang, Jinyoung
Source: check_circle
Web of Science Researcher Profile Sync

Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials

Science (New York, N.Y.)
2018 | Journal article
DOI: 10.1126/science.aat8126
EID:

2-s2.0-85056389481
Contributors: Shim, J.; Bae, S.-H.; Kong, W.; Lee, D.; Qiao, K.; Nezich, D.; Park, Y.J.; Zhao, R.; Sundaram, S.; Li, X. et al.
Source: Self-asserted source
Hyun S. Kum via Scopus - Elsevier
grade
Preferred source (of 2)‎

Epitaxial Lift-off (ELO) of InGaP/GaAs/InGaAs solar cells with quantum dots in GaAs middle sub-cell

Solar Energy Materials and Solar Cells
2018 | Journal article
DOI: 10.1016/j.solmat.2018.05.016
EID:

2-s2.0-85047251822
Contributors: Tatavarti, S.R.; Bittner, Z.S.; Wibowo, A.; Slocum, M.A.; Nelson, G.; Kum, H.; Ahrenkiel, S.P.; Hubbard, S.M.
Source: Self-asserted source
Hyun S. Kum via Scopus - Elsevier
grade
Preferred source (of 2)‎

Graphene/III-V hybrid diode optical modulator

Optics InfoBase Conference Papers
2018 | Conference paper
DOI: 10.1364/CLEO_AT.2018.JTu2A.7
EID:

2-s2.0-85049149607
Contributors: Yao, R.; Zheng, B.; Kum, H.; Kim, Y.; Bae, S.; Kim, J.; Zhang, H.; Guo, W.
Source: Self-asserted source
Hyun S. Kum via Scopus - Elsevier

Graphene/III-V Hybrid Diode Optical Modulator

Conference on Lasers and Electro-Optics (CLEO)
2018 | Conference paper
WOSUID: WOS:000526031001397
Contributors: Yao, Ruizhe; Zheng, Bowen; Kum, Hyun; Kim, Yunjo; Bae, Sanghoon; Kim, Jeehwan; Zhang, Hualiang; Guo, Wei
Source: check_circle
Web of Science Researcher Profile Sync

Recent progress in Van der Waals (vdW) heterojunction-based electronic and optoelectronic devices

Carbon
2018 | Journal article
DOI: 10.1016/j.carbon.2018.02.104
EID:

2-s2.0-85046025385
Contributors: Shim, J.; Kang, D.-H.; Kim, Y.; Kum, H.; Kong, W.; Bae, S.-H.; Almansouri, I.; Lee, K.; Park, J.-H.; Kim, J.
Source: Self-asserted source
Hyun S. Kum via Scopus - Elsevier
grade
Preferred source (of 2)‎

Two-step photon absorption in InP/InGaP quantum dot solar cells

Applied Physics Letters
2018 | Journal article
DOI: 10.1063/1.5037238
EID:

2-s2.0-85050774216
Contributors: Kum, H.; Dai, Y.; Aihara, T.; Slocum, M.A.; Tayagaki, T.; Fedorenko, A.; Polly, S.J.; Bittner, Z.; Sugaya, T.; Hubbard, S.M.
Source: Self-asserted source
Hyun S. Kum via Scopus - Elsevier
grade
Preferred source (of 2)‎

High efficiency single-junction InGaP photovoltaic devices under low intensity light illumination

Ieee First World Conference on Photovoltaic Energy Conversion/conference Record of the Twenty Fourth Ieee Photovoltaic Specialists Conference-, Vols I and Ii
2017 | Conference paper
DOI: 10.1109/PVSC.2017.8366547
WOSUID: WOS:000455636000061
Contributors: Dai, Yushuai; Kum, Hyun; Slocum, Michael A.; Nelson, George T.; Hubbard, Seth M.
Source: check_circle
Web of Science Researcher Profile Sync

InP Quantum Dot Intermediate Band Solar Cell Grown via MOCVD

Ieee First World Conference on Photovoltaic Energy Conversion/conference Record of the Twenty Fourth Ieee Photovoltaic Specialists Conference-, Vols I and Ii
2017 | Conference paper
DOI: 10.1109/PVSC.2017.8366473
WOSUID: WOS:000455636000170
Contributors: Kum, Hyun; Dai, Yushuai; Slocum, Michael; Bittner, Zachary; Hubbard, Seth
Source: check_circle
Web of Science Researcher Profile Sync

Integration of Quantum Dots and Quantum Wells into InGaAs Metamorphic Subcell for Radiation Hard 3-J ELO IMM Photovoltaics

Ieee First World Conference on Photovoltaic Energy Conversion/conference Record of the Twenty Fourth Ieee Photovoltaic Specialists Conference-, Vols I and Ii
2017 | Conference paper
DOI: 10.1109/PVSC.2017.8366357
WOSUID: WOS:000455636002023
Contributors: Bittner, Zachary S.; Kum, Hyun; Slocum, Michael A.; Nelson, George T.; Tatavarti, Rao; Wibowo, Andree; Hubbard, Seth M.
Source: check_circle
Web of Science Researcher Profile Sync

Temperature and voltage-bias dependent two-step photon absorption in InAs/GaAs/A10.3GaAs quantum dot in a well solar cells

Ieee First World Conference on Photovoltaic Energy Conversion/conference Record of the Twenty Fourth Ieee Photovoltaic Specialists Conference-, Vols I and Ii
2017 | Conference paper
WOSUID: WOS:000455636000011
Contributors: Dai, Yushuai; Smith, Brittany L.; Slocum, Michael A.; Bittner, Zachary S.; Kum, Hyun; D'Rozario, Julia; Hubbard, Seth M.
Source: check_circle
Web of Science Researcher Profile Sync

Wafer-scale Thermodynamically Stable GaN Nanorods via Two-Step Self-Limiting Epitaxy for Optoelectronic Applications

Scientific Reports
2017-01 | Journal article
DOI: 10.1038/srep40893
Contributors: Hyun Kum; Han-Kyu Seong; Wantae Lim; Daemyung Chun; Young-il Kim; Youngsoo Park; Geonwook Yoo
Source: Self-asserted source
Hyun S. Kum via Crossref Metadata Search
grade
Preferred source (of 3)‎

SiO<inf>2</inf> nanohole arrays with high aspect ratio for InGaN/GaN nanorod-based phosphor-free white light-emitting-diodes

Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
2016 | Journal article
DOI: 10.1116/1.4959027
EID:

2-s2.0-84979247373
Contributors: Lim, W.; Kum, H.; Choi, Y.-J.; Sim, S.-H.; Yeon, J.-H.; Kim, J.-S.; Seong, H.-K.; Cha, N.-G.; Kim, Y.-I.; Park, Y.-S. et al.
Source: Self-asserted source
Hyun S. Kum via Scopus - Elsevier
grade
Preferred source (of 2)‎

Dependence of reverse bias leakage on depletion width and V-pit size in InGaN/GaN light-emitting diodes grown on silicon

Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
2015 | Journal article
DOI: 10.1116/1.4933039
EID:

2-s2.0-84944253399
Contributors: Kum, H.; Kim, M.; Lee, D.-G.; Tak, Y.; Maeng, J.; Kim, J.; Gu, G.; Kim, J.J.; Kim, Y.; Kim, J.-Y. et al.
Source: Self-asserted source
Hyun S. Kum via Scopus - Elsevier
grade
Preferred source (of 2)‎

Room temperature single GaN nanowire spin valves with FeCo/MgO tunnel contacts

Applied Physics Letters
2012 | Journal article
DOI: 10.1063/1.4711850
Contributors: Hyun Kum; Junseok Heo; Shafat Jahangir; Animesh Banerjee; Wei Guo; Pallab Bhattacharya
Source: Self-asserted source
Hyun S. Kum via Crossref Metadata Search
grade
Preferred source (of 3)‎

Spin diffusion in bulk GaN measured with MnAs spin injector

Physical Review B - Condensed Matter and Materials Physics
2012 | Journal article
DOI: 10.1103/PhysRevB.86.035315
EID:

2-s2.0-84864634107
Contributors: Jahangir, S.; Doǧan, F.; Kum, H.; Manchon, A.; Bhattacharya, P.
Source: Self-asserted source
Hyun S. Kum via Scopus - Elsevier
grade
Preferred source (of 2)‎

Gate control and amplification of magnetoresistance in a three-terminal device

Appl. Phys. Lett.
2011 | Journal article
DOI: 10.1063/1.3652765
Contributors: Hyun Kum; Shafat Jahangir; Debashish Basu; Dipankar Saha; Pallab Bhattacharya
Source: Self-asserted source
Hyun S. Kum via Crossref Metadata Search
grade
Preferred source (of 3)‎

Characteristics of a high temperature vertical spin valve

Appl. Phys. Lett.
2010 | Journal article
DOI: 10.1063/1.3524820
Contributors: Debashish Basu; Hyun Kum; Pallab Bhattacharya; Dipankar Saha
Source: Self-asserted source
Hyun S. Kum via Crossref Metadata Search
grade
Preferred source (of 2)‎

Magnetoresistance of lateral semiconductor spin valves

Journal of Applied Physics
2010 | Journal article
DOI: 10.1063/1.3525981
EID:

2-s2.0-78650920869
Contributors: Zainuddin, A.N.M.; Kum, H.; Basu, D.; Srinivasan, S.; Siddiqui, L.; Bhattacharya, P.; Datta, S.
Source: Self-asserted source
Hyun S. Kum via Scopus - Elsevier
grade
Preferred source (of 2)‎

Electric field control of magnetoresistance in a lateral InAs quantum well spin valve

Appl. Phys. Lett.
2009 | Journal article
DOI: 10.1063/1.3268432
Contributors: Hyun Kum; Debashish Basu; Pallab Bhattacharya; Wei Guo
Source: Self-asserted source
Hyun S. Kum via Crossref Metadata Search
grade
Preferred source (of 3)‎

Epitaxial growth and characterization of MnAs on InP and In <inf>0.53</inf>Ga<inf>0.47</inf>As

Journal of Physics D: Applied Physics
2009 | Journal article
DOI: 10.1088/0022-3727/42/9/092001
EID:

2-s2.0-65449182445
Contributors: Basu, D.; Bhattacharya, P.; Guo, W.; Kum, H.
Source: Self-asserted source
Hyun S. Kum via Scopus - Elsevier
grade
Preferred source (of 2)‎

Peer review (20 reviews for 12 publications/grants)

Review activity for Advanced materials. (2)
Review activity for Communications materials. (1)
Review activity for IEEE electron device letters : (1)
Review activity for Materials. (2)
Review activity for Micro. (1)
Review activity for Nano convergence. (5)
Review activity for Nano letters. (1)
Review activity for Nanoscale. (1)
Review activity for Nature communications (3)
Review activity for NPG Asia materials. (1)
Review activity for Science advances. (1)
Review activity for Surfaces and interfaces. (1)
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