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Scopus Author ID: 57202678744

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Employment (4)

Keysight Technologies (United States): Santa Rosa, California, US

2022-03-10 to present | Engineer (Keysight Labs)
Employment
Source: Self-asserted source
James P Ashton

National Institute of Standards and Technology: Gaithersburg, MD, US

2021-02 to 2022-03 | Materials Research Scientist (Nanoscale Device Characterization Division)
Employment
Source: Self-asserted source
James P Ashton

Jet Propulsion Laboratory: Pasadena, CA, US

2019-05 to 2019-07 | Summer Intern (Instruments/Sensors)
Employment
Source: Self-asserted source
James P Ashton

Jet Propulsion Laboratory: Pasadena, CA, US

2017-05 to 2017-07 | Summer Intern (Instruments/Sensors)
Employment
Source: Self-asserted source
James P Ashton

Education and qualifications (1)

The Pennsylvania State University: University Park, PA, US

2016-08 to 2020-12 | Ph.D. (Engineering Science and Mechanics)
Education
Source: Self-asserted source
James P Ashton

Works (13)

Tunable zero-field magnetoresistance responses in Si transistors: Origins and applications

Journal of Applied Physics
2024-04-21 | Journal article
DOI: 10.1063/5.0203331
Contributors: Stephen J. Moxim; Nicholas J. Harmon; Kenneth J. Myers; James P. Ashton; Elias B. Frantz; Michael E. Flatté; Patrick M. Lenahan; Jason T. Ryan
Source: check_circle
Crossref

Spin-dependent capture mechanism for magnetic field effects on interface recombination current in semiconductor devices

Applied Physics Letters
2023-12-18 | Journal article
DOI: 10.1063/5.0172275
Contributors: Nicholas J. Harmon; James P. Ashton; Patrick M. Lenahan; Michael E. Flatté
Source: check_circle
Crossref

Combining electrically detected magnetic resonance techniques to study atomic-scale defects generated by hot-carrier stressing in HfO2/SiO2/Si transistors

Journal of Applied Physics
2023-04-14 | Journal article
DOI: 10.1063/5.0145937
Contributors: S. J. Moxim; J. P. Ashton; M. A. Anders; J. T. Ryan
Source: check_circle
Crossref

A new approach to electrically detected magnetic resonance: Spin-dependent transient spectroscopy

Journal of Applied Physics
2022-09-21 | Journal article
DOI: 10.1063/5.0101852
Contributors: Kenneth J. Myers; Patrick M. Lenahan; James P. Ashton; Jason T. Ryan
Source: check_circle
Crossref

Intermediate spin pair relaxation through modulation of isotropic hyperfine interaction in frequency-swept spin-dependent recombination in 4H–SiC

Applied Physics Letters
2022-02-07 | Journal article
DOI: 10.1063/5.0084378
Contributors: J. P. Ashton; B. R. Manning; S. J. Moxim; F. V. Sharov; P. M. Lenahan; J. T. Ryan
Source: check_circle
Crossref

Detection of individual spin species via frequency-modulated charge pumping

Applied Physics Letters
2022-01-31 | Journal article
DOI: 10.1063/5.0081172
Contributors: J. P. Ashton; M. A. Anders; J. T. Ryan
Source: check_circle
Crossref

A quantitative model for the bipolar amplification effect: A new method to determine semiconductor/oxide interface state densities

Journal of Applied Physics
2021-10-07 | Journal article
DOI: 10.1063/5.0064397
Contributors: James P. Ashton; Stephen J. Moxim; Ashton D. Purcell; Patrick M. Lenahan; Jason T. Ryan
Source: check_circle
Crossref

Ultra-low field frequency-swept electrically detected magnetic resonance

Journal of Applied Physics
2021-02-28 | Journal article
DOI: 10.1063/5.0042484
Contributors: J. P. Ashton; B. R. Manning; W. R. Barker; P. M. Lenahan
Source: check_circle
Crossref

Observation of electrically detected electron nuclear double resonance in amorphous hydrogenated silicon films

Applied Physics Letters
2021-02-22 | Journal article
DOI: 10.1063/5.0041059
Contributors: Brian R. Manning; James P. Ashton; Patrick M. Lenahan
Source: check_circle
Crossref

Modeling of Near Zero-Field Magnetoresistance and Electrically Detected Magnetic Resonance in Irradiated Si/SiO2 MOSFETs

IEEE Transactions on Nuclear Science
2020-07 | Journal article
DOI: 10.1109/TNS.2020.2981495
Contributors: Nicholas J. Harmon; Stephen R. Mcmillan; James P. Ashton; Patrick M. Lenahan; Michael E. Flatte
Source: check_circle
Crossref

Multiple-photon transitions in electrically detected magnetic resonance measurements of 4H−SiC transistors

Physical Review B
2020-07-17 | Journal article
DOI: 10.1103/PhysRevB.102.020101
Contributors: James P. Ashton; Patrick M. Lenahan
Source: check_circle
Crossref

Electrically detected magnetic resonance study of barium and nitric oxide treatments of 4H-SiC metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics
2019-10-14 | Journal article
DOI: 10.1063/1.5120704
Contributors: J. P. Ashton; P. M. Lenahan; D. J. Lichtenwalner; A. J. Lelis; M. A. Anders
Source: check_circle
Crossref

A New Analytical Tool for the Study of Radiation Effects in 3-D Integrated Circuits: Near-Zero Field Magnetoresistance Spectroscopy

IEEE Transactions on Nuclear Science
2019-01 | Journal article
DOI: 10.1109/TNS.2018.2885300
Contributors: James P. Ashton; Stephen J. Moxim; Patrick M. Lenahan; Colin G. Mckay; Ryan J. Waskiewicz; Kenneth J. Myers; Michael E. Flatte; Nicholas J. Harmon; Chadwin D. Young
Source: check_circle
Crossref
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