Personal information

Solid State Physics, Condensed Matter Physics Material Science and Computational Physics, Computational fluid dynamics
South Africa, Hong Kong SAR China, Australia, Brazil, Finland, Ghana, Italy, Nigeria, South Africa, Germany, United States

Biography

Name: Dr. Emmanuel Igumbor:
General research: Theoretical and Computational Physics and Engineering
Main research: Solid State Physics, Condensed Matter Physics Material Science Computational Physics, Computational Electronics Eng. Mechanical Eng, and Computational fluid dynamics related topics

Dr Emmanuel Igumbor is an experienced Teacher and Postdoctoral Fellow with a demonstrated history of working in the higher education industry. He is skilled in Materials Science, Physics, Applied Mathematics, Statistical Data Analysis, and Computational Physics. Strong research professional with a Bachelor of Science-BSc focused in Mathematics and Statistics, Master of Science-MSc focused in Theoretical Physics and Doctor of Philosophy - PhD focused in Physics from University of Pretoria


My main research area is Theoretical and Computational Physics, focusing on modelling and simulation of point defects in wide and narrow band gap semiconductors, transition metals and graphene-based materials. I study these materials for possible discovery of new improved functional semiconductor for applications in nano and optoelectronic. My projects involve using the density functional theory (DFT) and post-DFT to predict the structural, electronic, and optical properties of these materials to understanding their behavior and improve their performances to meet the current and future technologies. The understanding of the theoretical predictions of new semiconductor materials in collaboration with experimental groups is a focal point of my research activities for the past ten (15) years.

My research is focused on the discovery of new functional materials that could improve the application of nano electronic and nanophotonic. The study will focus on the discovery of interesting defects that may influence positively the new functional material. The research will cut across thin film and semiconductor processing, transport of excess charge carriers, discovery of novel behaviors and insight for defect gettering of the new materials.

My CFD research focuses on multidisciplinary public health projects aimed at controlling infectious diseases, particularly airborne pathogens, using Euler-Lagrangian methods and the Discrete Phase Model (DPM) for particle tracking. Additionally, my research includes CFD studies on hydrocyclones for mineral exploration, heat pipe heat exchangers for nuclear reactor applications, and collaborative projects with the ATLAS team at CERN, involving ITK humidity sensors, thermal management, and flushing systems.

Activities

Employment (6)

University of Johannesburg: Johannesburg, Gauteng, ZA

2021-07-01 to present | Research Fellow (Mechanical Engineering)
Employment
Source: Self-asserted source
Emmanuel Igumbor

University of South Africa: Pretoria, Gauteng, ZA

2018-07-01 to present | Research Fellow (School of Interdisciplinary Research and Graduate Studies )
Employment
Source: Self-asserted source
Emmanuel Igumbor

University of Pretoria: Pretoria, Gauteng, ZA

2017-02-01 to 2018-06-29 | Postdoctoral Fellow (Physics)
Employment
Source: Self-asserted source
Emmanuel Igumbor

University of Pretoria: Pretoria, Gauteng, ZA

2016-02-01 to 2016-11-30 | Lecturer (Engineering)
Employment
Source: Self-asserted source
Emmanuel Igumbor

University of Pretoria: Pretoria, Gauteng, ZA

2014-04-01 to 2015-11-30 | Research and Teaching Assistant (Physics)
Employment
Source: Self-asserted source
Emmanuel Igumbor

Samuel Adegboyega University: Ogwa, Edo, NG

2011-11-01 to 2014-03-31 | Lecturer (Mathematical and Physical Sciences)
Employment
Source: Self-asserted source
Emmanuel Igumbor

Education and qualifications (3)

University of Pretoria: Pretoria, Gauteng, ZA

2014-01-04 to 2016-12-19 | PhD (Physics)
Education
Source: Self-asserted source
Emmanuel Igumbor

African University of Science and Technology: Abuja, Federal Capital Territory, NG

2009-06-28 to 2009-12-19 | MSc (Theoretical Physics) (Mathematics and Applied Physics)
Education
Source: Self-asserted source
Emmanuel Igumbor

University of Port Harcourt: Choba, Rivers State, NG

2001-01-04 to 2005-11-27 | BSc (Mathematics and Statistics)
Education
Source: Self-asserted source
Emmanuel Igumbor

Professional activities (1)

South Africa Institute of Physics: Pretoria, Gauteng, ZA

2015-06-01 to present | Professional Member
Membership
Source: Self-asserted source
Emmanuel Igumbor

Funding (2)

University of South Africa Postdoctoral Award

2018-07 to 2021-06 | Award
University of South Africa (Pretoria, Gauteng, ZA)
Source: Self-asserted source
Emmanuel Igumbor

Uiversity of Johanessburg Postdoctoral Award

Award
University of Johannesburg (Johannesburg, Gauteng, ZA)
Source: Self-asserted source
Emmanuel Igumbor

Works (46)

Donor-induced electrically charged defect levels: examining the role of indium and n-type defect-complexes in germanium

Journal of Computational Electronics
2024 | Journal article
EID:

2-s2.0-85196313564

Part of ISSN: 15728137 15698025
Contributors: Igumbor, E.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier

Enhancement of lithiation on a graphane monolayer through extended H vacancy pathways: An ab initio study

Physica B: Condensed Matter
2024 | Journal article
EID:

2-s2.0-85176245961

Part of ISSN: 09214526
Contributors: Kgalema, S.P.; Diale, M.; Igumbor, E.; Mapasha, R.E.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier

Exploring defect engineering in monolayer TiS<sub>3</sub> for next-generation electronic devices: Insights from first-principles study

Computational Condensed Matter
2024 | Journal article
EID:

2-s2.0-85201105788

Part of ISSN: 23522143
Contributors: Dongho-Nguimdo, G.M.; Igumbor, E.; Benecha, E.M.; Raji, A.T.; Lombardi, E.B.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier

Infectiousness model of expelled droplets exposed to ultraviolet germicidal irradiation coupled with evaporation

Computers and Fluids
2024 | Journal article
EID:

2-s2.0-85188026653

Part of ISSN: 00457930
Contributors: Ralijaona, M.; Igumbor, E.; Bhamjee, M.; Otwombe, K.; Nabeemeeah, F.; Milovanovich, M.; Martinson, N.; Mafa, P.; Leeuw, L.; Connell, S.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier

Trivalent Atom Defect-Complex Induced Defect Levels in Germanium for Enhanced Ge‑Based Device Performance

Journal of Electronic Materials
2024 | Journal article
EID:

2-s2.0-85183433533

Part of ISSN: 1543186X 03615235
Contributors: Igumbor, E.; Dongho-Nguimdo, M.; Mapasha, E.; Kalimuthu, R.; Raji, A.; Meyer, W.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier

Vanadium embedded in monolayer silicene: Energetics and proximity-induced magnetism

Journal of Applied Physics
2024 | Journal article
EID:

2-s2.0-85200706782

Part of ISSN: 10897550 00218979
Contributors: Raji, A.T.; Maboe, D.P.A.; Benecha, E.M.; Dongho-Nguimdo, M.; Igumbor, E.; Lombardi, E.B.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier

A DFT Study of Solvent and Substituent Effects on the Adsorptive and Photovoltaic Properties of Some Selected Porphyrin Derivatives for DSSC Application

Journal of Fluorescence
2023 | Journal article
EID:

2-s2.0-85173880884

Part of ISSN: 15734994 10530509
Contributors: Sanusi, K.; Fatomi, N.O.; Aderogba, A.A.; Khoza, P.B.; Igumbor, E.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier

Associate Editor

SSRN
2023 | Other
EID:

2-s2.0-85162789907

Part of ISSN: 15565068
Contributors: Mapasha, R.E.; Kgalema, S.P.; Diale, M.; Igumbor, E.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier

Li on a Ch Divacancy Self-Healed Graphane: A First -Principles Study

2023-11 | Preprint
Contributors: Mapasha RE; Kgalema SP; Mapingire H; Igumbor E
Source: Self-asserted source
Emmanuel Igumbor via Europe PubMed Central

DLTS study of the influence of annealing on deep level defects induced in xenon ions implanted n-type 4H-SiC

Journal of Materials Science: Materials in Electronics
2022 | Journal article
EID:

2-s2.0-85131698502

Part of ISSN: 1573482X 09574522
Contributors: Omotoso, E.; Meyer, W.E.; Igumbor, E.; Hlatshwayo, T.T.; Prinsloo, A.R.E.; Auret, F.D.; Sheppard, C.J.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier

Electronic properties and defect levels induced by n/p-type defect-complexes in Ge

Materials Science in Semiconductor Processing
2022 | Journal article
EID:

2-s2.0-85133210403

Part of ISSN: 13698001
Contributors: Igumbor, E.; Olaniyan, O.; Dongho-Nguimdo, G.M.; Mapasha, R.E.; Ahmad, S.; Omotoso, E.; Meyer, W.E.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier

Determination of capture barrier energy of the E-center in palladium Schottky barrier diodes of antimony-doped germanium by varying the pulse width

Materials Research Express
2020 | Journal article
EID:

2-s2.0-85081948241

Part of ISSN: 20531591
Contributors: Omotoso, E.; Paradzah, A.T.; Igumbor, E.; Taleatu, B.A.; Meyer, W.E.; Auret, F.D.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier

Stability, electronic and defect levels induced by substitution of Al and P pair in 4H–SiC

Journal of Physics and Chemistry of Solids
2020 | Journal article
EID:

2-s2.0-85081684324

Part of ISSN: 00223697
Contributors: Igumbor, E.; Dongho-Nguimdo, G.M.; Mapasha, R.E.; Omotoso, E.; Meyer, W.E.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier

Tuning the electronic structure and thermodynamic properties of hybrid graphene-hexagonal boron nitride monolayer

FlatChem
2020 | Journal article
EID:

2-s2.0-85090968407

Part of ISSN: 24522627
Contributors: Olaniyan, O.; Moskaleva, L.; Mahadi, R.; Igumbor, E.; Bello, A.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier

Barrier height inhomogeneities on Pd/n-4H-SiC Schottky diodes in a wide temperature range

Materials Science and Engineering B: Solid-State Materials for Advanced Technology
2019 | Journal article
EID:

2-s2.0-85069841440

Contributors: Gora, V.E.; Auret, F.D.; Danga, H.T.; Tunhuma, S.M.; Nyamhere, C.; Igumbor, E.; Chawanda, A.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier

Electrical characterization of electron beam exposure induced defects in epitaxially grown n-type silicon

AIP Conference Proceedings
2019 | Conference paper
EID:

2-s2.0-85067190213

Contributors: Danga, H.T.; Auret, F.D.; Tunhuma, S.M.; Omotoso, E.; Igumbor, E.; Meyer, W.E.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier

Electronic properties and defect levels induced by group III substitution–interstitial complexes in Ge

Journal of Materials Science
2019 | Journal article
EID:

2-s2.0-85065397197

Contributors: Igumbor, E.; Dongho-Nguimdo, G.M.; Mapasha, R.E.; Meyer, W.E.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier

Electronic properties of vacancies in bilayer graphane

Physica B: Condensed Matter
2019 | Journal article
EID:

2-s2.0-85071109543

Contributors: Mapasha, R.E.; Igumbor, E.; Andriambelaza, N.F.; Chetty, N.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier

First principles prediction of the solar cell efficiency of chalcopyrite materials AgMX <inf>2</inf> (M=In, Al; X=S, Se, Te)

Computational Condensed Matter
2019 | Journal article
EID:

2-s2.0-85065198754

Contributors: Dongho-Nguimdo, G.M.; Igumbor, E.; Zambou, S.; Joubert, D.P.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier

First principles prediction of the solar cell efficiency of chalcopyrite materials AgMX<sub>2</sub> (M=In,Al; X=S, Se,Te)

arXiv
2019 | Other
EID:

2-s2.0-85170724376

Part of ISSN: 23318422
Contributors: Dongho-Nguimdo, G.; Igumbor, E.; Zambou, S.; Joubert, D.P.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier

First principles prediction of the solar cell efficiency of chalcopyrite materials AgMX<sub>2</sub> (M=In,Al; X=S, Se,Te)

arXiv
2019 | Other
EID:

2-s2.0-85093706704

Part of ISSN: 23318422
Contributors: Dongho-Nguimdo, G.; Igumbor, E.; Zambou, S.; Joubert, D.P.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier

Defect levels induced by double substitution of B and N in 4H-SiC

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
2019-03 | Journal article
Part of ISSN: 0168-583X
Contributors: E. Igumbor; H.T. Danga; E. Omotoso; W.E. Meyer
Source: Self-asserted source
Emmanuel Igumbor via Crossref Metadata Search
grade
Preferred source (of 2)‎

The study of low temperature irradiation induced defects in p-Si using deep-level transient spectroscopy

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
2019-03 | Journal article
Part of ISSN: 0168-583X
Contributors: H.T. Danga; S.M. Tunhuma; F.D. Auret; E. Igumbor; E. Omotoso; W.E. Meyer
Source: Self-asserted source
Emmanuel Igumbor via Crossref Metadata Search
grade
Preferred source (of 2)‎

Ab-initio study of the optical properties of beryllium-sulphur co-doped graphene

AIP Advances
2019-02 | Journal article
Part of ISSN: 2158-3226
Contributors: O. Olaniyan; E. Igumbor; A. A. Khaleed; A. A. Mirghni; N. Manyala
Source: Self-asserted source
Emmanuel Igumbor via Crossref Metadata Search
grade
Preferred source (of 2)‎

Induced defect levels of P and Al vacancy-complexes in 4H-SiC: A hybrid functional study

Materials Science in Semiconductor Processing
2019-01 | Journal article
Part of ISSN: 1369-8001
Contributors: E. Igumbor; O. Olaniyan; R.E. Mapasha; H.T. Danga; E. Omotoso; W.E. Meyer
Source: Self-asserted source
Emmanuel Igumbor via Crossref Metadata Search
grade
Preferred source (of 3)‎

Density functional theory calculation of monolayer WTe<inf>2</inf> transition metal dichalcogenides doped with H, Li and Be

Physica B: Condensed Matter
2018 | Journal article
EID:

2-s2.0-85024891914

Contributors: Igumbor, E.; Mapasha, R.E.; Meyer, W.E.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier
grade
Preferred source (of 2)‎

Electrical characterisation of deep level defects created by bombarding the n-type 4H-SiC with 1.8 MeV protons

Surface and Coatings Technology
2018 | Journal article
EID:

2-s2.0-85045719962

Contributors: Omotoso, E.; Paradzah, A.T.; Janse van Rensburg, P.J.; Legodi, M.J.; Auret, F.D.; Igumbor, E.; Danga, H.T.; Diale, M.; Meyer, W.E.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier

Electrically active defects in p-type silicon after alpha-particle irradiation

Physica B: Condensed Matter
2018 | Journal article
EID:

2-s2.0-85022004553

Contributors: Danga, H.T.; Auret, F.D.; Tunhuma, S.M.; Omotoso, E.; Igumbor, E.; Meyer, W.E.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier
grade
Preferred source (of 2)‎

Electrically active induced energy levels and metastability of B and N vacancy-complexes in 4H-SiC

Journal of Physics Condensed Matter
2018 | Journal article
EID:

2-s2.0-85045543206

Contributors: Igumbor, E.; Olaniyan, O.; Mapasha, R.E.; Danga, H.T.; Omotoso, E.; Meyer, W.E.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier
grade
Preferred source (of 2)‎

Electronic properties of B and Al doped graphane: A hybrid density functional study

Physica B: Condensed Matter
2018 | Journal article
EID:

2-s2.0-85027251004

Contributors: Mapasha, R.E.; Igumbor, E.; Andriambelaza, N.F.; Chetty, N.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier
grade
Preferred source (of 2)‎

The influence of thermal annealing on the characteristics of Au/Ni Schottky contacts on n-type 4H-SiC

Applied Physics A: Materials Science and Processing
2018 | Journal article
EID:

2-s2.0-85046088926

Contributors: Omotoso, E.; Auret, F.D.; Igumbor, E.; Tunhuma, S.M.; Danga, H.T.; Ngoepe, P.N.M.; Taleatu, B.A.; Meyer, W.E.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier
grade
Preferred source (of 2)‎

A systematic study of the stability, electronic and optical properties of beryllium and nitrogen co-doped graphene

Carbon
2018-04 | Journal article
Part of ISSN: 0008-6223
Contributors: O. Olaniyan; R.E. Maphasha; M.J. Madito; A.A. Khaleed; E. Igumbor; N. Manyala
Source: Self-asserted source
Emmanuel Igumbor via Crossref Metadata Search
grade
Preferred source (of 3)‎

Ab Initio Study of Aluminium Impurity and Interstitial-Substitutional Complexes in Ge Using a Hybrid Functional (HSE)

Journal of Electronic Materials
2017 | Journal article
EID:

2-s2.0-84992052357

Contributors: Igumbor, E.; Mapasha, R.E.; Meyer, W.E.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier
grade
Preferred source (of 2)‎

Electrical characterization of defects induced by electron beam exposure in low doped n-GaAs

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
2017 | Journal article
EID:

2-s2.0-85019590469

Contributors: Tunhuma, S.M.; Auret, F.D.; Nel, J.M.; Omotoso, E.; Danga, H.T.; Igumbor, E.; Diale, M.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier
grade
Preferred source (of 2)‎

Rare earth interstitial-complexes in Ge: Hybrid density functional studies

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
2017 | Journal article
EID:

2-s2.0-85018922325

Contributors: Igumbor, E.; Omotoso, E.; Danga, H.T.; Tunhuma, S.M.; Meyer, W.E.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier
grade
Preferred source (of 2)‎

Rare Earth Interstitials in Ge: A Hybrid Density Functional Theory Study

Journal of Electronic Materials
2017 | Journal article
EID:

2-s2.0-84992751256

Contributors: Igumbor, E.; Andrew, R.C.; Meyer, W.E.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier
grade
Preferred source (of 2)‎

Rare earth substitutional impurities in germanium: A hybrid density functional theory study

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
2017 | Journal article
EID:

2-s2.0-85020083935

Contributors: Igumbor, E.; Omotoso, E.; Tunhuma, S.M.; Danga, H.T.; Meyer, W.E.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier
grade
Preferred source (of 2)‎

The effects of high-energy proton irradiation on the electrical characteristics of Au/Ni/4H-SiC Schottky barrier diodes

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
2017 | Journal article
EID:

2-s2.0-85020010749

Contributors: Omotoso, E.; Meyer, W.E.; van Rensburg, P.J.J.; Igumbor, E.; Tunhuma, S.M.; Ngoepe, P.N.M.; Danga, H.T.; Auret, F.D.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier
grade
Preferred source (of 2)‎

Thermal stability of defects introduced by electron beam deposition in p-type silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
2017 | Journal article
EID:

2-s2.0-85017556961

Contributors: Danga, H.T.; Auret, F.D.; Tunhuma, S.M.; Omotoso, E.; Igumbor, E.; Meyer, W.E.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier
grade
Preferred source (of 2)‎

<i>Ab Initio</i> Study of MgTe Self-Interstitial (Mg<sub>i</sub> and Te<sub>i</sub>): A Wide Band Gap Semiconductor

Nano Hybrids and Composites
2017-06 | Journal article
Contributors: Emmanuel Igumbor; Ezekiel Omotoso; Walter Ernst Meyer
Source: Self-asserted source
Emmanuel Igumbor via Crossref Metadata Search
grade
Preferred source (of 2)‎

A first principle hybrid functional calculation of Tm<inf>Ge</inf><sup>3+</sup>-V<inf>Ge</inf> defect complexes in germanium

Computational Condensed Matter
2016 | Journal article
EID:

2-s2.0-84979031671

Contributors: Igumbor, E.; Mapasha, R.E.; Andrew, R.; Meyer, W.E.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier
grade
Preferred source (of 2)‎

A hybrid density functional study of silicon and phosphorus doped hexagonal boron nitride monolayer

Journal of Physics: Conference Series
2016 | Conference paper
EID:

2-s2.0-85002145872

Contributors: Mapasha, R.E.; Igumbor, E.; Chetty, N.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier
grade
Preferred source (of 2)‎

A hybrid functional calculation of Tm<sup>3+</sup> defects in germanium (Ge)

Materials Science in Semiconductor Processing
2016 | Journal article
EID:

2-s2.0-84950251603

Contributors: Igumbor, E.; Meyer, W.E.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier
grade
Preferred source (of 2)‎

Ab-initio study of germanium di-interstitial using a hybrid functional (HSE)

Physica B: Condensed Matter
2016 | Journal article
EID:

2-s2.0-84950299561

Contributors: Igumbor, E.; Ouma, C.N.M.; Webb, G.; Meyer, W.E.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier
grade
Preferred source (of 2)‎

Ab-initio study of MgSe self-interstitial (Mg<sub>i</sub> and Se<sub>i</sub>)

Solid State Phenomena
2016 | Conference paper
EID:

2-s2.0-84953911264

Part of ISBN: 9783038356080
Part of ISSN: 16629779 10120394
Contributors: Igumbor, E.; Obodo, K.; Meyer, W.E.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier

Silicene and transition metal based materials: Prediction of a two-dimensional piezomagnet

Journal of Physics Condensed Matter
2010 | Journal article
EID:

2-s2.0-77957036625

Contributors: Dzade, N.Y.; Obodo, K.O.; Adjokatse, S.K.; Ashu, A.C.; Amankwah, E.; Atiso, C.D.; Bello, A.A.; Igumbor, E.; Nzabarinda, S.B.; Obodo, J.T. et al.
Source: Self-asserted source
Emmanuel Igumbor via Scopus - Elsevier
grade
Preferred source (of 2)‎

Peer review (43 reviews for 14 publications/grants)

Review activity for Data in brief. (3)
Review activity for ECS journal of solid state science and technology. (1)
Review activity for Journal of materials chemistry. (2)
Review activity for Journal of materials chemistry. (13)
Review activity for Journal of solid state electrochemistry. (3)
Review activity for Journal of solid state electrochemistry. (1)
Review activity for Materials chemistry and physics. (2)
Review activity for Materials science in semiconductor processing. (1)
Review activity for Materials today physics. (1)
Review activity for Molecular physics. (3)
Review activity for Nanoscale. (1)
Review activity for Physica. (8)
Review activity for Sustainable energy & fuels. (1)
Review activity for Vacuum. (3)